BUK86A GENERAL DESCRIPTION QUICK REFERENCE DATA Nchannel enhancement mode SYMBOL PARAMETER MAX. UNIT logic level fieldeffect power transistor in a plastic envelope V DS Drainsource voltage 6 V suitable for surface mount I D Drain current (DC). A applications. P tot Total power dissipation.8 W The device is intended for use in T j Junction temperature C automotive and general purpose R DS(ON) Drainsource onstate. Ω switching applications. resistance; V GS = V PINNING SOT PIN CONFIGURATION SYMBOL PIN DESCRIPTION d gate drain source g drain (tab) s LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC ) SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT V DS Drainsource voltage 6 V V DGR Draingate voltage R GS = kω 6 V ±V GS Gatesource voltage V I D Drain current (DC) T amb = C. A I D Drain current (DC) T amb = C. A I DM Drain current (pulse peak value) T amb = C A P tot Total power dissipation T amb = C.8 W T stg T j Storage temperature Junction temperature C C THERMAL RESISTANCES R th jsp R th jamb From junction to solder point From junction to ambient Mounted on any PCB Mounted on PCB of fig.8 K/W K/W Temperature measured at solder joint on drain tab. September Rev.
BUK86A STATIC CHARACTERISTICS T j = C unless otherwise specified V (BR)DSS Drainsource breakdown voltage V GS = V; I D =. ma 6 V V GS(TO) Gate threshold voltage V DS = V GS ; I D = ma... V I DSS Zero gate voltage drain current V DS = 6 V; V GS = V; µa I DSS Zero gate voltage drain current V DS = 6 V; V GS = V; T j = C.. ma I GSS Gate source leakage current V GS = ± V; V DS = V na R DS(ON) Drainsource onstate resistance V GS = V; I D =. A.8. Ω DYNAMIC CHARACTERISTICS T j = C unless otherwise specified g fs Forward transconductance V DS = V; I D =. A 6. S C iss Input capacitance V GS = V; V DS = V; f = MHz 6 8 pf C oss Output capacitance pf C rss Feedback capacitance 6 pf t d on Turnon delay time V DD = V; I D = A; ns t r Turnon rise time V GS = V; R GS = Ω; ns t d off t f Turnoff delay time Turnoff fall time R gen = Ω 6 8 ns ns REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS T j = C unless otherwise specified I DR Continuous reverse drain current. A I DRM Pulsed reverse drain current A V SD Diode forward voltage I F =. A; V GS = V.8. V t rr Reverse recovery time I F =. A; di F /dt = A/µs; ns Q rr Reverse recovery charge V GS = V; V R = V. µc AVALANCHE LIMITING VALUE W DSS Drainsource nonrepetitive I D =. A; V DD V; mj unclamped inductive turnoff V GS = V; R GS = Ω; T amb = C energy September Rev.
BUK86A 8 6 PD% Normalised Power Derating 6 8 Tamb / C Fig.. Normalised power dissipation. PD% = P D /P D C = f(t amb ). RDS(ON) = VDS/ID DC.. VDS / V BUK86A tp = us us ms ms ms s s Fig.. Safe operating area T amb = C I D & I DM = f(v DS ); I DM single pulse; parameter t p 8 6 ID% Normalised Current Derating 6 8 Tamb / C Fig.. Normalised continuous drain current. ID% = I D /I D C = f(t amb ); conditions: V GS V 8 6.. VGS / V =... VDS / V Fig.. Typical output characteristics, T j = C. I D = f(v DS ); parameter V GS... E+ E+ E+ E Zth jamb / (K/W) D =..... BUKX8 D = T t T E E E E E E+ E+ t / s Fig.. Transient thermal impedance. Z th jamb = f(t); parameter D = t p /T P D t p t p..8.6.. RDS(ON) / Ohm VGS / V =. 6 8 Fig.6. Typical onstate resistance, T j = C. R DS(ON) = f(i D ); parameter V GS. September Rev.
BUK86A VGS(TO) / V 8 6 Tj / C = VGS / V Fig.. Typical transfer characteristics. I D = f(v GS ) ; conditions: V DS = V; parameter T j max. typ. min. 6 6 8 Tj / C Fig.. Gate threshold voltage. V GS(TO) = f(t j ); conditions: I D = ma; V DS = V GS gfs / S E SUBTHRESHOLD CONDUCTION E E % typ 8 % E E 6 8 Fig.8. Typical transconductance, T j = C. g fs = f(i D ); conditions: V DS = V E6..8..6. VGS / V Fig.. Subthreshold drain current. I D = f(v GS) ; conditions: T j = C; V DS = V GS a Normalised RDS(ON) = f(tj) C / pf BUKy... Ciss Coss Crss 6 6 8 Tj / C Fig.. Normalised drainsource onstate resistance. a = R DS(ON) /R DS(ON) C = f(t j ); I D =. A; V GS = V VDS / V Fig.. Typical capacitances, C iss, C oss, C rss. C = f(v DS ); conditions: V GS = V; f = MHz September Rev.
BUK86A 8 6 VGS / V VDS / V = 6 8 QG / nc Tamb/ C Fig.. Typical turnon gatecharge characteristics. V GS = f(q G ); conditions: I D =. A; parameter V DS 8 8 6 WDSS% Normalised Avalanche Energy Fig.. Normalised avalanche energy rating. W DSS % = f(t amb ); conditions: I D =. A 8 L + VDD 6 Tj / C = VGS VDS T.U.T. ID/ RGS R shunt. VGS / V Fig.. Typical reverse diode current. I F = f(v SDS ); conditions: V GS = V; parameter T j. Fig.6. Avalanche energy test circuit. W DSS =. LI D BV DSS /(BV DSS V DD ) September Rev.
BUK86A MOUNTING INSTRUCTIONS Dimensions in mm. PRINTED CIRCUIT BOARD Dimensions in mm..8 min 6. min 8. min (x). 6. 6.6.. min.6 Fig.. soldering pattern for surface mounting SOT. Fig.8. PCB for thermal resistance and power rating for SOT. PCB: FR epoxy glass (.6 mm thick), copper laminate ( µm thick). September 6 Rev.
BUK86A MECHANICAL DATA Dimensions in mm Net Mass:. g.. 6. 6... B. M A A..... 6. 6 max.8 max max..8..8.6.6. (x) M B Fig.. SOT surface mounting package. Notes. Observe the general handling precautions for electrostaticdischarge sensitive devices (ESDs) to prevent damage to MOS gate oxide.. Refer to surface mounting instructions for SOT envelope.. Epoxy meets UL V at /8". September Rev.
BUK86A DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications. Limiting values Limiting values are given in accordance with the Absolute Maximum Rating System (IEC ). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. Philips Electronics N.V. 6 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. September 8 Rev.