Automotive N-Channel 8 V (D-) 75 C MOFET 6.5 mm PowerPAK O-8L ingle 5.3 mm D 4 G 3 FEATURE TrenchFET power MOFET AEC-Q qualified % R g and UI tested Material categorization: for definitions of compliance please see www.vishay.com/doc?999 D Top View Bottom View PRODUCT UMMARY V D (V) 8 R D(on) ( ) at V G = V.8 R D(on) ( ) at V G = 4.5 V. I D (A) 6 Configuration ingle Package PowerPAK O-8L G N-Channel MOFET ABOLUTE MAXIMUM RATING (T C = 5 C, unless otherwise noted) PARAMETER YMBOL LIMIT UNIT Drain-ource Voltage V D 8 Gate-ource Voltage V G ± V Continuous Drain Current T C = 5 C a 6 I D T C = 5 C 36 Continuous ource Current (Diode Conduction) a I 6 A Pulsed Drain Current b I DM ingle Pulse Avalanche Current I A 35 L =. mh ingle Pulse Avalanche Energy E A 6 mj Maximum Power Dissipation b T C = 5 C 68 P D T C = 5 C W Operating Junction and torage Temperature Range T J, T stg -55 to +75 oldering Recommendations (Peak Temperature) d, e 6 C THERMAL REITANCE RATING PARAMETER YMBOL LIMIT UNIT Junction-to-Ambient PCB Mount c R thja 68 C/W Junction-to-Case (Drain) R thjc. Notes a. Package limited. b. Pulse test; pulse width 3 μs, duty cycle %. c. When mounted on " square PCB (FR4 material). d. ee solder profile (www.vishay.com/doc?7357). The PowerPAK O-8L is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components. 6-44-Rev. A, 7-Oct-6 Document Number: 75 ARE UBJECT TO PECIFIC DICLAIMER, ET FORTH AT www.vishay.com/doc?9
PECIFICATION (T C = 5 C, unless otherwise noted) PARAMETER YMBOL TET CONDITION MIN. TYP. MAX. UNIT tatic Drain-ource Breakdown Voltage V D V G =, I D = 5 μa 8 - - V Gate-ource Threshold Voltage V G(th) V D = V G, I D = 5 μa.5..5 Gate-ource Leakage I G V D = V, V G = ± V - - ± na Zero Gate Voltage Drain Current I D V G = V V D = 8 V, T J = 5 C - - 5 μa V G = V V D = 8 V - - V G = V V D = 8 V, T J = 75 C - - 5 On-tate Drain Current a I D(on) V G = V V D 5 V 3 - - A Notes a. Pulse test; pulse width 3 μs, duty cycle %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. V G = V I D = A -.68.8 Drain-ource On-tate Resistance a R D(on) V G = 4.5 V I D = 8 A -.93. V G = V I D = A, T J = 5 C - -.34 V G = V I D = A, T J = 75 C - -.7 Forward Transconductance b g fs V D = 5 V, I D = A - 53 - Dynamic b Input Capacitance C iss - 8 3 Output Capacitance C oss V G = V V D = 5 V, f = MHz - 4 pf Reverse Transfer Capacitance C rss - 3 45 Total Gate Charge c Q g - 4 6 Gate-ource Charge c Q gs V G = V V D = 4 V, I D = 5 A - 8.5 - nc Gate-Drain Charge c Q gd - 5.5 - Gate Resistance R g f = MHz..43.65 Turn-On Delay Time c t d(on) - 4 5 Rise Time c t r V DD = 4 V, R L = 8-5 Turn-Off Delay Time c t d(off) I D 5 A, V GEN = V, R g = - 6 4 ns Fall Time c t f - 3 5 ource-drain Diode Ratings and Characteristics b Pulsed Current a I M - - A Forward Voltage V D I F = A, V G = -.8. V Body diode reverse recovery time t rr - 54 ns Body diode reverse recovery charge Q rr - 8 6 nc I F = A, di/dt = A/μs Reverse recovery fall time t a - 6 - ns Reverse recovery rise time t b - 8 - Body diode peak reverse recovery current I RM(REC) - -.7-6 A tresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. 6-44-Rev. A, 7-Oct-6 Document Number: 75 ARE UBJECT TO PECIFIC DICLAIMER, ET FORTH AT www.vishay.com/doc?9
TYPICAL CHARACTERITIC (T A = 5 C, unless otherwise noted) V G = V thru 5 V 8 8 6 4 V G = 4 V V G = 3 V 4 6 8 V D - Drain-to-ource Voltage (V) 6 4 T C = 5 C T C = 5 C T C =-55 C 4 6 8 V G - Gate-to-ource Voltage (V) Output Characteristics Transfer Characteristics 5.5 g fs - Transconductance () 75 5 5 T C = 5 C T C =-55 C T C = 5 C R D(on) - On-Resistance (Ω)..5..5 V G = V V G = 4.5 V 6 8 4 3 Transconductance. 6 3 48 64 8 On-Resistance vs. Drain Current 8 C - Capacitance (pf) 4 68 56 C oss C iss V G - Gate-to-ource Voltage (V) 8 6 4 I D = 5 A V D = 4 V C rss 6 3 48 64 8 V D - Drain-to-ource Voltage (V) 3 4 5 Q g - Total Gate Charge (nc) Capacitance Gate Charge 6-44-Rev. A, 7-Oct-6 3 Document Number: 75 ARE UBJECT TO PECIFIC DICLAIMER, ET FORTH AT www.vishay.com/doc?9
TYPICAL CHARACTERITIC (T A = 5 C, unless otherwise noted).5 R D(on) - On-Resistance (Normalized)..7.3.9 I D = A V G = V V G = 4.5 V.5-5 -5 5 5 75 5 5 75 T J - Junction Temperature ( C) I - ource Current (A)... T J = 5 C T J = 5 C..4.6.8.. V D - ource-to-drain Voltage (V) On-Resistance vs. Junction Temperature ource Drain Diode Forward Voltage..5 R D(on) - On-Resistance (Ω).8.6.4. T J = 5 C V G(th) Variance (V). -.3 -.7 -. I D = 5 ma I D = 5 μa. T J = 5 C 4 6 8 V G - Gate-to-ource Voltage (V) On-Resistance vs. Gate-to-ource Voltage -.5-5 -5 5 5 75 5 5 75 T J - Temperature ( C) Threshold Voltage 5 V D - Drain-to-ource Voltage (V) 99 96 93 I D = ma 9-5 -5 5 5 75 5 5 75 T J - Junction Temperature ( C) Drain ource Breakdown vs. Junction Temperature 6-44-Rev. A, 7-Oct-6 4 Document Number: 75 ARE UBJECT TO PECIFIC DICLAIMER, ET FORTH AT www.vishay.com/doc?9
THERMAL RATING (T A = 5 C, unless otherwise noted) I DM limited I D limited Limited by R D(on) () μs ms ms ms, s, s, DC. T C = 5 C ingle pulse BVD limited... V D - Drain-to-ource Voltage (V) () V G > minimum V G at which R D(on) is specified afe Operating Area Normalized Effective Transient Thermal Impedance.. Duty Cycle =.5. Notes:. P DM.5 t t t.. Duty Cycle, D = t. Per Unit Base = R thja = 68 C/W 3. T JM - T A = P DM Z (t) thja ingle Pulse 4. urface Mounted -4-3 - 6 quare Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient - 6-44-Rev. A, 7-Oct-6 5 Document Number: 75 ARE UBJECT TO PECIFIC DICLAIMER, ET FORTH AT www.vishay.com/doc?9
THERMAL RATING (T A = 5 C, unless otherwise noted) Normalized Effective Transient Thermal Impedance. Duty Cycle =.5...5. ingle Pulse. -4-3 - quare Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case - Note The characteristics shown in the two graphs - Normalized Transient Thermal Impedance Junction-to-Ambient (5 C) - Normalized Transient Thermal Impedance Junction-to-Case (5 C) are given for general guidelines only to enable the user to get a ball park indication of part capabilities. The data are extracted from single pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part mounted on printed circuit board - FR4, size " x " x.6", double sided with oz. copper, % on both sides. The part capabilities can widely vary depending on actual application parameters and operating conditions. maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for ilicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?75. 6-44-Rev. A, 7-Oct-6 6 Document Number: 75 ARE UBJECT TO PECIFIC DICLAIMER, ET FORTH AT www.vishay.com/doc?9
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