MPSA13 MPSA14 CASE 29-02, STYLE 1 TO-92 (TO-226AA) DARLINGTON TRANSISTOR MAXIMUM RATINGS THERMAL CHARACTERISTICS ON CHARACTERISTICS) 1) NPN SILICON

Similar documents
General Purpose Transistors

PN2222A TO - 92 BIPOLAR TRANSISTORS TRANSISTOR(NPN) (TO-92) FEATURES

BUH150. SWITCHMODE NPN Silicon Planar Power Transistor POWER TRANSISTOR 15 AMPERES 700 VOLTS, 150 WATTS

2N4401. General Purpose Transistors. NPN Silicon. Pb Free Packages are Available* Features. MAXIMUM RATINGS MARKING DIAGRAM

2N4401 TO - 92 BIPOLAR TRANSISTORS TRANSISTOR(NPN) (TO-92) FEATURES

PNP SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/357

BC556B, BC557A, B, C, BC558B. Amplifier Transistors. PNP Silicon BC556B PNP AUDIO 100MA 65V 500MW TO92.

COMPLEMENTARY NPN/PNP TRANSISTOR

PN2222, PN2222A. General Purpose Transistors. NPN Silicon. Pb Free Packages are Available* Features MAXIMUM RATINGS MARKING DIAGRAM

2N4123, 2N4124. General Purpose Transistors. NPN Silicon. Pb Free Packages are Available* Features MAXIMUM RATINGS

2SC4203 2SC4203. Video Output for High Definition VDT High Speed Switching Applications. Maximum Ratings (Ta = 25 C)

2N3903, 2N3904. NPN Silicon. Pb Free Packages are Available* Features. MAXIMUM RATINGS. THERMAL CHARACTERISTICS (Note 1)

2N4403. PNP Silicon. Pb Free Packages are Available* Features MAXIMUM RATINGS THERMAL CHARACTERISTICS MARKING DIAGRAM

BUH100 SWITCHMODE NPN Silicon Planar Power Transistor The BUH100 has an application specific state of art die designed for use in 100 Watts Halogen el

2SC5748 2SC5748. Horizontal Deflection Output for HDTV&Digital TV. Maximum Ratings (Tc 25 C) Electrical Characteristics (Tc 25 C)

Type Marking Pin Configuration Package BCX42 BSS63 1 = B 1 = B 2 = E 2 = E

MMBT3906L, SMMBT3906L. General Purpose Transistor. PNP Silicon

BDP947_BDP949_BDP953. Silicon NPN Transistors. For AF driver and output stages High collector current High current gain

BCR191.../SEMB1 BCR191/F/L3 BCR191T/W BCR191S SEMB1. Type Marking Pin Configuration Package BCR191 BCR191F BCR191L3 2=E 2=E 2=E =C 3=C 3=C

2N3904 SMALL SIGNAL NPN TRANSISTOR

2SC3457. isc Silicon NPN Power Transistor. isc Product Specification. INCHANGE Semiconductor. isc Website:

BC546B, BC547A, B, C, BC548B, C. Amplifier Transistors. NPN Silicon. Pb Free Packages are Available* Features. MAXIMUM RATINGS

BC846, BC847, BC848 Series. General Purpose Transistors. NPN Silicon

RADIATION HARDENED NPN SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/255

Type Marking Pin Configuration Package BCM846S 1Ms 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT363

2SC3074 2SC3074. High Current Switching Applications. Maximum Ratings (Ta = 25 C)

MP6901 MP6901. High Power Switching Applications. Hammer Drive, Pulse Motor Drive and Inductive Load Switching. Maximum Ratings (Ta = 25 C)

C1 B2 E2 TR2 TR1 EHA Type Marking Pin Configuration Package BC817UPN 1Bs 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SC74

Type Marking Pin Configuration Package BFN24 BFN26 1=B 1=B

Type Marking Pin Configuration Package BCX42 DKs 1 = B 2 = E 3 = C SOT23. Maximum Ratings Parameter Symbol Value Unit Collector-emitter voltage V CEO

Type Marking Pin Configuration Package BFN38 BFN38 1=B 2=C 3=E 4=C - - SOT223

BC856ALT1 Series. General Purpose Transistors. PNP Silicon. Pb Free Packages are Available. Features.

BCW61..., BCX71... PNP Silicon AF Transistors. For AF input stages and driver applications High current gain Low collector-emitter saturation voltage

Pb-free (RoHS compliant) package Qualified according AEC Q101 C1 (2) Type Marking Pin Configuration Package BCV62A BCV62B BCV62C 2 = C1 2 = C1 2 = C1

Type Marking Pin Configuration Package BC BC807-16W BC BC807-25W BC BC807-40W BC BC808-25W BC808-40

HARDENED PNP SILICON SWITCHING TRANSISTOR

2N4918-2N4920 Series. Medium-Power Plastic PNP Silicon Transistors 3.0 A, V, 30 W GENERAL PURPOSE POWER TRANSISTORS

4N25 4N26 4N27 4N28. MAXIMUM RATINGS (TA = 25 C unless otherwise noted) SCHEMATIC. Order this document by 4N25/D STANDARD THRU HOLE

BC847BPDXV6T5G. SBC847BPDXV6 NPN/PNP Dual General Purpose Transistor

P2N2907ARL1G. Amplifier Transistor. PNP Silicon. These are Pb -Free Devices* Features. MAXIMUM RATINGS THERMAL CHARACTERISTICS

BC846ALT1 Series. General Purpose Transistors. NPN Silicon

C1 (2) C2 (1) E1 (3) E2 (4) Type Marking Pin Configuration Package BCV61B BCV61C 2 = C1 2 = C1 1 = C2 1 = C2

Type Marking Pin Configuration Package BSP60 BSP61 BSP62 2=C 2=C 2=C 3=E 3=E 3=E

2N5401. PNP Silicon. These are Pb Free Devices* Features. MAXIMUM RATINGS THERMAL CHARACTERISTICS MARKING DIAGRAM

2N5550, 2N5551. NPN Silicon. Pb Free Packages are Available* Features. MAXIMUM RATINGS THERMAL CHARACTERISTICS MARKING DIAGRAM

BC556B, BC557A, B, C, BC558B, C. Amplifier Transistors. PNP Silicon. Pb Free Packages are Available* Features MAXIMUM RATINGS

MMBT5550L, MMBT5551L, SMMBT5551L. High Voltage Transistors. NPN Silicon

BC846BDW1T1G, SBC846BDW1T1G, BC847BDW1T1G, SBC847BDW1T1G Series, NSVBC847BDW1T2G, BC848CDW1T1G

BC487, BC487B. High Current Transistors. NPN Silicon. Pb Free Packages are Available* Features. MAXIMUM RATINGS MARKING DIAGRAM

2N4921, 2N4922, 2N4923. Medium Power Plastic NPN Silicon Transistors 1.0 AMPERE GENERAL PURPOSE POWER TRANSISTORS VOLTS, 30 WATTS

BCW60, BCX70. NPN Silicon AF Transistors. For AF input stages and driver applications High current gain Low collector-emitter saturation voltage

MJW18020G. NPN Silicon Power Transistors High Voltage Planar 30 AMPERES 1000 VOLTS BV CES 450 VOLTS BV CEO, 250 WATTS

DATA SHEET. BFG31 PNP 5 GHz wideband transistor DISCRETE SEMICONDUCTORS Sep 12

PZT2222A. NPN Silicon Planar Epitaxial Transistor SOT 223 PACKAGE NPN SILICON TRANSISTOR SURFACE MOUNT

ESD (Electrostatic discharge) sensitive device, observe handling precaution!

350mW, PNP Small Signal Transistor

BC846AW - BC850CW Taiwan Semiconductor. NPN Transistor. Small Signal Product SOT-323 FEATURES MECHANICAL DATA

DATA SHEET. BC556; BC557 PNP general purpose transistors DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 1997 Mar 27.

2N5655G, 2N5657G. Plastic NPN Silicon High-Voltage Power Transistors 0.5 AMPERE POWER TRANSISTORS NPN SILICON VOLTS, 20 WATTS

MBT3904DW1, MBT3904DW2, SMBT3904DW1, NSVMBT3904DW1. Dual General Purpose Transistors

List... Package outline... Features Mechanical data... Maximum ratings... Electrical characteristics... 3~4

CA3086. General Purpose NPN Transistor Array. Applications. Pinout. Ordering Information. Data Sheet August 2003 FN483.5

BC807-16W/-25W/-40W Taiwan Semiconductor

DATA SHEET. PRF957 UHF wideband transistor DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 1999 Mar 01.

BD245, BD245A, BD245B, BD245C NPN SILICON POWER TRANSISTORS

ANALOG ELECTRONICS I. Transistor Amplifiers DR NORLAILI MOHD NOH

DATA SHEET. BFQ226 NPN video transistor DISCRETE SEMICONDUCTORS Sep 04

BC BC Pb-containing package may be available upon special request

BFR93A. NPN Silicon RF Transistor. For low-noise, high-gain broadband amplifiers at collector currents from 2 ma to 30 ma

BCP51...-BCP53... Type Marking Pin Configuration Package BCP51 BCP51-16 BCP52-16 BCP53-10 BCP SOT223 SOT223 SOT223 SOT223 SOT223

Type Marking Pin Configuration Package BFR93A R2s 1=B 2=E 3=C SOT23

Type Marking Pin Configuration Package BCP68-25 * 1=B 2=C 3=E 4=C - - SOT223

4N25/ 4N26/ 4N27/ 4N28. Optocoupler with Phototransistor Output. Vishay Telefunken. Description. Applications. Features.

BC337, BC337-25, BC Amplifier Transistors. NPN Silicon. These are Pb Free Devices. Features MAXIMUM RATINGS

RF amplifier up to GHz range specially for wide band antenna amplifier.

200mW, PNP Small Signal Transistor

4N35/ 4N36/ 4N37. Optocoupler with Phototransistor Output. Vishay Telefunken. Description. Applications. Features.

LOW V CE(SAT) NPN SURFACE MOUNT TRANSISTOR. Top View

Flyback Converter in DCM

ESD (Electrostatic discharge) sensitive device, observe handling precaution!

Type Marking Pin Configuration Package BFR183 RHs 1=B 2=E 3=C SOT23

MJF6388 (NPN) MJF6668 (PNP) Complementary Power Darlingtons. For Isolated Package Applications

Type Marking Pin Configuration Package BFR93AW R2s 1=B 2=E 3=C SOT323

BFS17/BFS17R/BFS17W. Silicon NPN Planar RF Transistor. Vishay Telefunken. Applications. Features

0.016 W/ C to +150 C

Type Marking Pin Configuration Package BCX68-10 BCX68-16 BCX =B 1=B 1=B

Type Marking Pin Configuration Package BFR182W RGs 1=B 2=E 3=C SOT323

DATA SHEET. BFQ225 NPN video transistor DISCRETE SEMICONDUCTORS Sep 04

MJD18002D2T4G POWER TRANSISTOR 2 AMPERES 1000 VOLTS, 50 WATTS

BC846BDW1, BC847BDW1, BC848CDW1. Dual General Purpose Transistors. NPN Duals

B 1 E 1. C 1 Internal Schematic (TOP VIEW) E 1, B 1, C 1 = PNP3906 Section E 2, B 2, C 2 = NPN3904 Section

PM25RSK120 Intellimod Module Three Phase + Brake IGBT Inverter Output 25 Amperes/1200 Volts

BFS483. Low Noise Silicon Bipolar RF Transistor

MC3346. General Purpose Transistor Array One Differentially Connected Pair and Three Isolated Transistor Arrays

Type Marking Pin Configuration Package BFR93AW R2s 1=B 2=E 3=C SOT323

DISCRETE SEMICONDUCTORS DATA SHEET. BLU86 UHF power transistor

Parameter Test Conditions Symbol Value Unit Junction ambient on glass fibre printed board (40 x 25 x 1.5) mm 3 plated with 35m Cu

RF amplifier up to GHz range specially for wide band antenna amplifier.

Transcription:

MAXMUM RATNGS Ratng Symbol Value Unt Collector-Emtter Voltage V CES 30 Collector-Base Voltage VCBO 30 Emtter-Base Voltage Vebo 0 Collector Current Contnuous c 500 madc Total Devce Dsspaton @ Ta = 25 C PD 625 mw 5.0 Total Devce Dsspaton @ Tq = 25 C Operatng and Storage Juncton Temperature Range THERMAL CHARACTERSTCS Pd.5 2 Watts Tj, T stg - 55 to +50 C Characterstc Symbol Max Unt Thermal Resstance, Juncton to Case ReJC 83.3 "C/W Thermal Resstance, Juncton to Ambent RftJA 200 C/w MPSA3 MPSA4 CASE 29-02, STYLE TO-92 (TO-226AA) DARLNGTON TRANSSTOR NPN SLCON Refer to 2N6426 for graphs. ELECTRCAL CHARACTERSTCS (TA = 25 C unless otherwse noted. ' ~ Characterstc Symbol Mn Unt OFF CHARACTERSTCS Collector-Emtter Breakdown Vbltage V(BR)CES 30 (q = QOAAdc, b = 0) Collector Cutoff Current (VCB = 30, e = 0) Emtter Cutoff Current 'CBO 'EBO 00 (V BE = 0, c = 0) ON CHARACTERSTCS) ) DC Current Gan dc = 0 madc, Vce = 5.0 ) MPSA3 MPSA4 hfe 5000 0,000 (C = 00 madc, Vqe = 5.0 ) Collector-Emtter Saturaton Voltage (l c = 00 madc, b = 0- madc) Base-Emtter On Voltage (lc = 00 madc, Vce = 5-0 ) SMALL-SGNAL CHARACTERSTCS Current-Gan Bandwdth Product(2) (lc = 0 madc, Vce = 5.0, f = 00 MHz) () Pulse Test: Pulse Wdth «s 300 us, Duty Cycle =s 2.0%. MPSA3 MPSA4 v CE(sat) VBE 0,000 20,000.5 MHz (2) fj = hfel ftest- 2-29

MPSA6 MPSA7 CASE 29-02, STYLE TO-92 (TO-226AA) SWTCHNG TRANSSTOR NPN SLCON MAXMUM RATNGS Ratng Symbol MPS-A6MPS-A7 Unt Collector-Emtter Voltage VCEO 40 Emtter-Base Voltage vebo 2 5 Collector Current Contnuous c 00 madc Total Devce Dsspaton @ T^ = 25 C PD 625 5.0 mw Total Devce Dsspaton @ Tc = 25 C Operatng and Storage Juncton Temperature Range PD.5 2 Watt T J. T stg - 55 to + 50 C THERMAL CHARACTERSTCS Characterstc Thermal Resstance, Juncton to Ambent Thermal Resstance, Juncton to Case Symbol RflJA P-0JC Max 200 C/W ELECTRCAL CHARACTERSTCS (TA = 25 C unless otherwse noted.) OFF CHARACTERSTCS Characterstc Symbol Mn Max Unt Collector-Emtter Breakdown Voltage flc = -0 madc, b = 0) v (BR)CEO 40 Emtter-Base Breakdown Voltage (E = 0. madc, c = 0) MPS-A6 MPS-A7 v (BR)EBO Collector Cutoff Current (VCB = 30, e = 0) 'CBO 00 Emtter Cutoff Current (VBE = 0, c = 0) ON CHARACTERSTCS 'EBO DC Current Gan PC = 5.0 madc, Vce 0 ) hfe 200 600 Collector-Emtter Saturaton Voltage (C = 0 madc, b =.0 madc) v CE(sat) 0.25 SMALL-SGNAL CHARACTERSTCS Current-Gan Bandwdth Product (C = 5.0 madc, Vce = 0, f 00 MHz) Output Capactance (VCB = 0, e = 0, f 00 khz) MPS-A6 MPS-A7 ft Cobo 00 80 MHz pf 2-220

' : ; FGURE -DC CURRENT GAN - TA = 25 j V CE = WPS-MT NPS- tf _ - " 0 2.0 C, COLLECTOR CURRENT (ma) FGURE 2-SMALLSGNALCURRENTGAN FGURE 3 -SATURATON AND ON VOLTAGES C - MPS-A7 """ S-A " s v 3E{ on)" MPS-A6 MP S-A 6 t/ps A7 n n MP S-AG 0.3 0.5 0.7.0 3.0 5.0 7.0 0 C, COLLECTOR CURRENT (ma) 2.0 3.0 5.0 0 20 30 50 C. COLLECTOR CURRENT (m A) FGURE 4 - CURRENT-GAN-BANDWDTH PRODUCT FGURE 5 -OUTPUT CAPACTANCE MPS A6 MPS- M7 k - :^v N X T A = 25 C VCE^.0 Vdt ; MPS-A6 t 20 0.5.0 20 5.0 C.COLLECTORCURRENT(mA) < p< -A 7 -. 07.0 2.0 40 7.0 0 Vr, REVERSE VOLTAGE (VOLTS) 2-22

MPSA8 CASE 29-02, STYLE TO-92 (TO-226AA) LOW NOSE TRANSSTOR NPN SLCON MAXMUM RATNGS Ratng Symbol Value Unt Collector-Emtter Voltage VCEO 45 Collector-Base Voltage vcbo 45 Emtter-Base Voltage v EBO 6.5 Collector Current Contnuous 'C 200 madc Total Devce Dsspaton @ l/ = 25 C PD 625 5.0 mw Total Devce Dsspaton @ Tc = 25 C Operatng and Storage Juncton Temperatufe-Range Pd.5 2 Watts T J- T stg - 55 to + 50 C THERMAL CHARACTERSTCS Characterstc Symbol Max Unt Thermal Resstance, Juncton to Case R<uc 83.3 C/W Thermal Resstance, Juncton to Ambent RflJAd) 200 c/w ELECTRCAL CHARACTERSTCS (TA = 25 C unless otherwse noted.) OFF CHARACTERSTCS Collector-Emtter Breakdown Voltage(2) dc = 0 madc, b = 0) Collector-Base Breakdown Voltage dc = 00 yxadc, e = 0) Emtter-Base Breakdown Voltage (E = 0/xAdc, lc = 0) Characterstc Symbol Mn Typ Max Unt v (BR)CEO 45 - - v (BR)CBO 45 V(BR)EBO 6.5 Collector Cutoff Current (Vcb - 30, l E = 'CBO.0 50 0) ON CHARACTERSTCS^) DC Current Gan dc = 0 /xadc, Vce = 5.0 ) dc = 00 ^Adc, Vce = 50 > dc =.0 madc, V CE = 5-0 vdc ) dc = 0 madc, Vce = 5.0 ) Collector-Emtter Saturaton Voltage dc = 0 madc, b - 0.5 madc) dc = 50 madc, b = 5.0 madc) Base-Emtter On Voltage dc = 0 madc, Vce = 5.0 ) SMALL-SGNAL CHARACTERSTCS Current-Gan Bandwdth Product dc =.0 madc, Vce = 5.0 ' f = 00 MHz) hfe VcE(sat) 400 500 500 500-580 850 00 50 500 0.08 0.2 0.3 VBE(on) 0.6 0.7 ft 00 60 - MHz Collector-Base Capactance Ccb.7 3.0 PF (Vcb = 5.0, l e = 0, f =.0 MHz) Emtter-Base Capactance Ceb,_ 5.6 6.5 PF (V EB = 0.5, l c = 0, f =.0 MHz) Nose Fgure dc = 00 /xadc, Vce = 5.0, Rs = 0 kfl, f = 0 Hz to 5.7 khz) dc = 00 /xadc, Vce = 5.0, Rs =.0 ko, f = 00 Hz) Equvalent Short Crcut Nose Voltage dc = 00 ^Adc, Vce = 5.0, Rs =.0 ko, f = 00 Hz) () R#JA s measured wth the devce soldered nto a typcal prnted crcut board. (2) Pulse Test: Pulse Wdth «300 /as, Duty Cycle s 2.0%. NF - 0.5 4.0.5 v T 6.5 nv/vhz db 2-222

[! r! ;! MPSA8 FGURE - TRANSSTOR NOSE MODEL NOSE CHARACTERSTCS (Vce = 5.0, T A = 25 C) FGURE 2 - EFFECTS OF FREQUENCY NOSE VOLTAGE FGURE 3 - EFFECTS OF COLLECTOR CURRENT c = 0 ma m Bandwdth =.( Hz m!' Ba dwdlh =. a Hz RS'O f = Hz j o 7.0 5.0 3.0 v^ "^ ^3.0 rr 0 man 300 na ** - 0 20 60 00 200 500.0 k 2.0 k 5.0 k 0 k 20 k 50 k 00 k (.FREQUENCY (Hz) **!^ > T oo^ vr LLk- Ssfe:' 00 khz 00 002 0.05 0. 02 0.5.0 20 5.0 0 C. COLLECTOR CURRENT (ma) FGURE 4 - NOSE CURRENT FGURE 5 - WDEBAND NOSE FGURE, - T Bandwtd th= 0 Hz to 5 7 khz "T c= ma 500 m TOmA 0 20 50 00 200 500.0 k 2.0 k 5.0 k 0 k 20 k 50 k 0 (FREQUENCY (Hz) 0 20 50 00 200 500.0 k 2.0 k 5.0 k 0 k 20 k 50 k 00 k RS, SOURCE RESSTANCE (OHMS) 2-223

l ' ' MPSA8 FGURE 6 - TOTAL NOSE VOLTAGE 00 Hz NOSE DATA 6 FGURE 7 - NOSE FGURE urn ]T c = 0m ma 2 o *.0 ma u_- - nn *"w to 20 50 00 200 500 0k 2.0k 5.0k 0k 20k 50k 00k RS. SOURCE RESSTANCE (OHMS) nn ^f30 MA 0ua4^ : 0 20 50 00 200 500.0 k 2.0 k 5.0k 0k 20 k 50k 00k RS, SOURCE RESSTANCE (OHMS) FGURE 8 DC CURRENT GAN vc = 5. Vol s -Ta= 25 C- 25 C - ^ 0 0. 02 0. D3 0. )5 2 3 5 c.ct)llec TOR CURR ENT ma 2 3 0. 5.0 0 FGURE 9 - "ON" VOLTAGES FGURE 0 - TEMPERATURE COEFFCENTS - Tj = 25 C Nl:... llll - V BE @ V CE = 5. V Tj = 25 Cto 2 5 C- T llll E(sat) SC" C JA-44h -4-4 -4 0.0 0.02 0.05 0. 0.2 0.5.0 2.0 5.0 0 20 50 00 C, COLLECTOR CURRENT(mA). -55 Cto25 D C 0 0.02 0.05 0.2 0.5.0 2.0 5.0 0 20 50 00 C, COLLECTOR CURRENT (ma) 2-224

MPSA8 FGURE - CAPACTANCE FGURE 2 - CURRENT-GAM-BANDWOTH PRODUCT Cob C "" T J 25 " C b Ccb ^ - VcE = 5.0V- T Tj = 25 C 0. 0.2 0.5.0.2.0 5.0 0 20 50 00 Vfl, REVERSE VOLTAGE (VOLTS).0 20 30 5.0 7.0 0 20 30 50 70 00 C COLLECTOR CURRENT (ma) 2-225