PZT2222A. NPN Silicon Planar Epitaxial Transistor SOT 223 PACKAGE NPN SILICON TRANSISTOR SURFACE MOUNT

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NPN Silicon Planar Epitaxial Transistor This NPN Silicon Epitaxial transistor is designed for use in linear and switching applications. The device is housed in the SOT223 package which is designed for medium power surface mount applications. Features PNP Complement is PZT297AT The SOT223 Package Can be Soldered Using Wave or Reflow SOT223 Package Ensures Level Mounting, Resulting in Improved Thermal Conduction, and Allows Visual Inspection of Soldered Joints The Formed Leads Absorb Thermal Stress During Soldering, Eliminating the Possibility of Damage to the Die Available in 2 mm Tape and Reel S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AECQ Qualified and PPAP Capable These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant* MAXIMUM RATINGS Rating Symbol Value Unit CollectorEmitter Voltage V CEO Vdc CollectorBase Voltage V CBO 75 Vdc EmitterBase Voltage (Open Collector) V EBO 6. Vdc Collector Current I C 6 madc Total Power Dissipation up to (Note ) P D.5 Storage Temperature Range T stg 65 to +5 C Junction Temperature T J 5 C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.. Device mounted on an epoxy printed circuit board.575 inches x.575 inches x.59 inches; mounting pad for the collector lead min..93 inches 2. THERMAL CHARACTERISTICS Thermal Resistance, JunctiontoAmbient Rating Symbol Value Unit Lead Temperature for Soldering,.625 from case Time in Solder Bath W R JA 83.3 C/W T L 26 C Sec SOT223 PACKAGE NPN SILICON TRANSISTOR SURFACE MOUNT 2 3 SOT223 (TO26) CASE 38E STYLE MARKING DIAGRAM A = Assembly Location Y = Year M = Month Code = PbFree Package (Note: Microdot may be in either location) ORDERING INFORMATION Device Package Shipping PZT2222ATG SPZT2222ATG PZT2222AT3G BASE SOT223 (PbFree) COLLECTOR 2, AYM PF 3 EMITTER SOT223 (PbFree) SOT223 (PbFree), Tape & Reel, Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8/D., Tape & Reel *For additional information on our PbFree strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. Semiconductor Components Industries, LLC, 23 August, 23 Rev. 9 Publication Order Number: PZT2222AT/D

ELECTRICAL CHARACTERISTICS ( unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS CollectorEmitter Breakdown Voltage (I C = madc, I B = ) V (BR)CEO Vdc CollectorBase Breakdown Voltage (I C = Adc, I E = ) V (BR)CBO 75 Vdc EmitterBase Breakdown Voltage (I E = Adc, I C = ) V (BR)EBO 6. Vdc BaseEmitter Cutoff Current (V CE = 6 Vdc, V BE = 3. Vdc) I BEX 2 nadc CollectorEmitter Cutoff Current (V CE = 6 Vdc, V BE = 3. Vdc) I CEX nadc EmitterBase Cutoff Current (V EB = 3. Vdc, I C = ) I EBO nadc CollectorBase Cutoff Current (V CB = 6 Vdc, I E = ) (V CB = 6 Vdc, I E =, ) I CBO nadc Adc ON CHARACTERISTICS DC Current Gain (I C =. madc, V CE = Vdc) (I C =. madc, V CE = Vdc) (I C = madc, V CE = Vdc) (I C = madc, V CE = Vdc, T A = 55 C) (I C = 5 madc, V CE = Vdc) (I C = 5 madc, V CE =. Vdc) (I C = 5 madc, V CE = Vdc) CollectorEmitter Saturation Voltages (I C = 5 madc, I B = 5 madc) (I C = 5 madc, I B = 5 madc) BaseEmitter Saturation Voltages (I C = 5 madc, I B = 5 madc) (I C = 5 madc, I B = 5 madc) Input Impedance (V CE = Vdc, I C =. madc, f =. khz) (V CE = Vdc, I C = madc, f =. khz) Voltage Feedback Ratio (V CE = Vdc, I C =. madc, f =. khz) (V CE = Vdc, I C = madc, f =. khz) SmallSignal Current Gain (V CE = Vdc, I C =. madc, f =. khz) (V CE = Vdc, I C = madc, f =. khz) Output Admittance (V CE = Vdc, I C =. madc, f =. khz) (V CE = Vdc, I C = madc, f =. khz) h FE 5 7 5 V CE(sat) V BE(sat) h ie h re h fe h oe.25 5 75 5. 25 3.3..2 8..25 8.x.x Noise Figure (V CE = Vdc, I C = Adc, f =. khz) F. db DYNAMIC CHARACTERISTICS 3 375 2 Vdc Vdc k mhos CurrentGain Bandwidth Product (I C = 2 madc, V CE = 2 Vdc, f = MHz) f T 3 MHz Output Capacitance (V CB = Vdc, I E =, f =. MHz) C c 8. pf Input Capacitance (V EB =.5 Vdc, I C =, f =. MHz) C e 25 pf SWITCHING TIMES () Delay Time (V CC = 3 Vdc, I C = 5 madc, t d ns Rise Time I B(on) = 5 madc, V EB(off) =.5 Vdc) Figure t r 25 Storage Time (V CC = 3 Vdc, I C = 5 madc, t s 225 ns Fall Time I B(on) = I B(off) = 5 madc) Figure 2 t f 6 2

V CC 9% R2 % R D.U.T. V o t r t p Figure. Input Waveform and Test Circuit for Determining Delay Time and Rise Time =.5 V to +9.9 V, V CC = +3 V, R = 69, R2 = 2. PULSE GENERATOR: OSCILLOSCOPE: PULSE DURATION t p 3 2 ns INPUT IMPEDANCE Z i > k RISE TIME t r 3 2 ns INPUT CAPACITANCE C i < 2 pf DUTY FACTOR =.2 RISE TIME t r < 5 ns V CC +6.2 V R2-3.8 V t f s TIME R D V BB D.U.T. R3 R Vo OSCILLOSCOPE Figure 2. Input Waveform and Test Circuit for Determining Storage Time and Fall Time V CE, COLLECTOREMITTER... I C /I B = T A = 55 C T A = 5 C Figure 3. Collector Emitter Saturation Voltage vs. Collector Current TYPICAL CHARACTERISTICS V BE(sat), BASEEMITTER.2...9.8.7.5..3.2. I C /I B = T A = 55 C T A = 5 C Figure. Base Emitter Saturation Voltage vs. Collector Current 3

TYPICAL CHARACTERISTICS h FE, DC CURRENT GAIN T A = 5 C T A = 55 C V CE = 6 V V CE(sat), COLLECTOREMITTER.8.6..2..8..2 I C = ma ma ma 3 ma 6 ma.... Figure 5. DC Current Gain vs. Collector Current I B, BASE CURRENT (ma) Figure 6. Saturation Region V BE(ON), BASEEMITTER ON VOLTAGE (V)...9.8.7.5..3.2. V CE = 2 V T A = 55 C T A = 5 C C, CAPACITANCE (pf). C ibo C obo Figure 7. BaseEmitter TurnOn Voltage vs. Collector Current V R, REVERSE VOLTAGE (V) Figure 8. Capacitance s... Single Pulse Test at. V CE, COLLECTOR EMITTER VOLTAGE (V) Figure 9. Safe Operating Area

PACKAGE DIMENSIONS.8 (3) H E e A e D b 2 3 A b E L SOT223 (TO26) CASE 38E ISSUE N L C NOTES:. DIMENSIONING AND TOLERANCING PER ASME Y.5M, 99. 2. CONTROLLING DIMENSION: INCH. MILLIMETERS INCHES DIM MIN NOM MAX MIN NOM MAX A.5.63.75.6.6.68 A.2.6...2. b.75.89.2.3. b 2.9 3.6 3.2.5.2.26 c.2.29..9.2. D 6.3 6.5 6.7.29.256.263 E 3.3 3.5 3.7.3.38.5 e 2.2 2.3 2..87.9.9 e.85.9.5.33.37. L.2.8 L.5.75.6.69.78 H E 6.7 7. 7.3.26.276.287 STYLE : PIN. BASE 2. COLLECTOR 3. EMITTER. COLLECTOR SOLDERING FOOTPRINT* 3.8.5.79 2.3.9 2.3.9 6.3.28.79.5.59 SCALE 6: mm inches *For additional information on our PbFree strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC s product/patent coverage may be accessed at www.onsemi.com/site/pdf/patentmarking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Typical parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 563, Denver, Colorado 827 USA Phone: 33675275 or 83386 Toll Free USA/Canada Fax: 33675276 or 833867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 82829855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 2 33 79 29 Japan Customer Focus Center Phone: 8875 5 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative PZT2222AT/D