Fast Switching EmCon Diode Feature 600 V EmCon technology Fast recovery Soft switching Low reverse recovery charge Low forward voltage 175 C operating temperature Easy paralleling Product Summary V RRM 600 V I F 30 A V F 1.5 V T jmax 175 C Type Package Ordering Code IDB30E60 PG-TO263-3 - Marking D30E60 Pin 1 PIN 2 PIN 3 NC C A Maximum Ratings, at T j = 25 C, unless otherwise specified Parameter Symbol Value Unit Repetitive peak peak reverse reverse voltage voltage V RRM V R R M 600 600 V V Continuous Continous forward current current I F A T C = =25 C 25 C I F 52.3 52.3 A T C = =90 C 90 C 34.9 34.9 Surge non repetitive forward current Surge non repetitive forward current I FSM I F S M 117 117 A T C = 25 C, t p = ms, sine halfwave T C =25 C, t p = ms, sine halfwave Maximum repetitive forward current Maximum repetitive forward current I FRM I F R M 81 81 A T C = 25 C, t p limited by t j,max, D = 0.5 T C =25 C, t p limited by T jmax, D=0.5 Power dissipation TPower C = 25 C dissipation P tot P t o t 142.9 W T C = =25 C 90 C 142.9 80.9 Operating T C =90 C junction temperature T j -40 +175 80.9 Storage Operating temperature and storage temperature T j, T s t g stg -55...+175-55...+150 C C Soldering temperature T S T 260 C 1.6mm reflow soldering, (0.063 in.) MSL1 from case for s S 260 Rev.2.4 Page 1
Thermal Characteristics Parameter Symbol Values Unit min. typ. max. Characteristics Thermal resistance, junction - case R thjc - - 1.05 K/W Thermal resistance, junction - ambient, leaded R thja - - 62 SMD version, device on PCB: @ min. footprint R thja - - 62 @ 6 cm 2 cooling area 1) - 35 - Electrical Characteristics, at T j = 25 C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. Static Characteristics Reverse leakage current I R µa V R =600V, T j =25 C - - 50 V R =600V, T j =150 C Forward voltage drop I F =, T j =25 C I F =, T j =150 C V F - - 2500 V - 1.5 2-1.5-1 Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air. Rev.2.4 Page 2
Electrical Characteristics, at T j = 25 C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. Dynamic Characteristics Reverse recovery time t rr ns V R =400V, I F =, di F /dt=00a/µs, T j =25 C - 126 - V R =400V, I F =, di F /dt=00a/µs, T j =125 C V R =400V, I F =, di F /dt=00a/µs, T j =150 C Peak reverse current V R =400V, I F =, di F /dt=00a/µs, T j =25 C V R =400V, I F =, di F /dt=00a/µs, T j =125 C V R =400V, I F =, di F /dt=00a/µs, T j =150 C Reverse recovery charge V R =400V, I F =, di F /dt=00a/µs, T j =25 C V R =400V, I F =, di F /dt=00a/µs, T j =125 C V R =400V, I F =, di F /dt=00a/µs, T j =150 C Reverse recovery softness factor V R =400V, I F =, di F /dt=00a/µs, T j =25 C V R =400V, I F =, di F /dt=00a/µs, T j =125 C V R =400V, I F =, di F /dt=00a/µs, T j =150 C - - 171 178 - - A - 19 - - 22 - - 24 - nc - 10 - - 1950 - - 2150 - S - 4 - - 4.6 - - 4.8 - Rev.2.4 Page 3
1 Power dissipation P tot = f (T C ) parameter: T j 175 C W 150 2 Diode forward current I F = f(t C ) parameter: T j 175 C 55 A 120 45 1 40 Ptot 0 90 80 IF 35 30 70 60 50 25 20 40 15 30 20 5 0 25 50 75 0 125 C 175 0 25 50 75 0 125 C 175 T C T C 3 Typ. diode forward current I F = f (V F ) 4 Typ. diode forward voltage V F = f (T j ) 90 2 A V IF 70 60 50 40-55 C 25 C 0 C 150 C VF 1.8 1.7 1.6 1.5 1.4 30 20 1.3 1.2 1.1 0 0 0.5 1 1.5 V 2.5 V F Rev.2.4 Page 4 1-60 -20 20 60 0 C 160 T j
5 Typ. reverse recovery time t rr = f (di F /dt) parameter: V R = 400V, T j = 125 C 500 ns 6 Typ. reverse recovery charge Q rr =f(di F /dt) parameter: V R = 400V, T j = 125 C 2600 nc 400 2200 trr 350 Qrr 2000 300 1800 250 1600 200 150 1400 1200 0 200 300 400 500 600 700 800 A/µs 00 di F /dt 7 Typ. reverse recovery current I rr = f (di F /dt) parameter: V R = 400V, T j = 125 C 26 A 00 200 300 400 500 600 700 800 A/µs 00 di F /dt 8 Typ. reverse recovery softness factor S = f(di F /dt) parameter: V R = 400V, T j = 125 C 12 22 Irr 20 18 16 14 S 9 8 7 12 6 5 8 4 6 200 300 400 500 600 700 800 A/µs 00 di F /dt Rev.2.4 Page 5 3 200 300 400 500 600 700 800 A/µs 00 di F /dt
9 Max. transient thermal impedance Z thjc = f (t p ) parameter : D = t p /T 1 K/W IDP30E60 0 ZthJC -1-2 -3 D = 0.50 0.20 0. 0.05 0.02 single pulse 0.01-4 -7-6 -5-4 -3-2 s 0 t p Rev.2.4 Page 6
Rev.2.4 Page 7 2007-09-01
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