C3D1665D Silicon Carbide Schottky Diode Z-Rec Rectifier Features 65-Volt Schottky Rectifier Zero Reverse Recovery Current Zero Forward Recovery Voltage High-Frequency Operation Temperature-Independent Switching Behavior Extremely Fast Switching Positive Temperature Coefficient on V F Benefits Replace Bipolar with Unipolar Rectifiers Essentially No Switching Losses Higher Efficiency Reduction of Heat Sink Requirements Parallel Devices Without Thermal Runaway Package TO-247-3 RM = 65 V ( =135 C) = 22 ** Q c = 4 nc** pplications Switch Mode Power Supplies (SMPS) Boost diodes in PFC or DC/DC stages Free Wheeling Diodes in Inverter stages C/DC converters Part Number Package Marking C3D1665D TO-247-3 C3D1665 Maximum Ratings (=25 C unless otherwise specified) Symbol Parameter Value Unit Test Conditions Note RM Repetitive Peak Reverse Voltage 65 V SM Surge Peak Reverse Voltage 65 V V DC DC Blocking Voltage 65 V Continuous Forward Current (Per Leg/Device) 23/46 11/22 8/16 =25 C =135 C =15 C Fig. 3 RM Repetitive Peak Forward Surge Current (Per Leg/Device) 37.5/75 25.5/51 =25 C, t P = 1 ms, Half Sine Wave =11 C, t P = 1 ms, Half Sine Wave SM Non-Repetitive Peak Forward Surge Current (Per Leg/Device) 71/142 6/12 =25 C, t p = 1 ms, Half Sine Wave =11 C, t p = 1 ms, Half Sine Wave Fig. 8 SM Non-Repetitive Peak Forward Surge Current (Per Leg/Device) 65/13 53/18 =25 C, t P = 1 µs, Pulse =11 C, t P = 1 µs, Pulse Fig. 8 P tot Power Dissipation (Per Leg) 1* 43.5* W =25 C =11 C Fig. 4 dv/dt Diode dv/dt ruggedness 2 V/ns =-6V i 2 dt i 2 t value (Per Leg) 25 18 2 s =25 C, t P =1 ms =11 C, t P =1 ms T J, T stg Operating Junction and Storage Temperature -55 to +175 C TO-247 Mounting Torque 1 8.8 Nm lbf-in M3 Screw 6-32 Screw * Per Leg, ** Per Device 1 C3D1665D Rev. B, 7-216
Electrical Characteristics (Per Leg) Symbol Parameter Typ. Max. Unit Test Conditions Note V F I R Forward Voltage Reverse Current 1.5 2.1 1 12 1.8 2.4 51 24 Q C Total Capacitive Charge 2 nc C Total Capacitance 395 37 32 V μ pf = 8 T J =25 C = 8 T J =175 C = 65 V T J =25 C = 65 V T J =175 C = 4 V, = 8 di/dt = 5 /μs T J = 25 C = V, T J = 25 C, f = 1 MHz = 2 V, T J = 25 C, f = 1 MHz = 4 V, T J = 25 C, f = 1 MHz Fig. 1 Fig. 2 Fig. 5 Fig. 6 E C Capacitance Stored Energy 3. μj = 4 V Fig. 7 Note: This is a majority carrier diode, so there is no reverse recovery charge. Thermal Characteristics Symbol Parameter Typ. Unit Note R θjc Thermal Resistance from Junction to Case * Per Leg, ** Per Device 1.5 *.75 ** C/W Fig. 9 Typical Performance (Per Leg) 2 3 Fow ward I Current, () F () 18 T J = -55 C 16 14 T J = 75 C 12 T J = 125 C 1 T J = 175 C 8 6 4 2..5 1. 1.5 2. 2.5 3. 3.5 4. Foward VVoltage, F (V) V F (V) 2 4 6 8 1 12 Reverse Leaka age Current, I RR (m) I R (m) 25 2 15 1 5 T J = 175 C T J = 125 C T J = 75 C T J = -55 C 1 2 3 4 5 6 7 8 9 1 Reverse VVoltage, R (V) (V) Figure 1. Forward Characteristics Figure 2. Reverse Characteristics 2 C3D1665D Rev. B, 7-216
Typical Performance (Per Leg) 8 12 (peak) () 7 6 5 4 3 1% Duty 2% Duty 3% Duty 5% Duty 7% Duty DC P Tot (W) 1 8 6 4 2 1 2 25 5 75 1 125 15 175 C 25 5 75 1 125 15 175 C Figure 3. Current Derating Figure 4. Power Derating Capacit tive Q Charge, C (nc) Q C (nc) 3 25 2 15 1 5 Conditions: Ca apacitance C (pf) (pf) 45 4 35 3 25 2 15 1 5 Conditions: F test = 1 MHz V test = 25 mv 1 2 3 4 5 6 7 Reverse VVoltage, R (V) (V) 1 1 1 1 Reverse VVoltage, R (V) (V) Figure 5. Total Capacitance Charge vs. Reverse Voltage Figure 6. Capacitance vs. Reverse Voltage 3 C3D1665D Rev. B, 7-216
Typical Performance (Per Leg) 8 1, 7 Capacitance Sto ored E Energy, E C (µj) C (mj) 6 5 4 3 2 1 1 2 3 4 5 6 7 Reverse VVoltage, (V) R (V) SM FSM () 1 T J_initial = 25 C T J_initial = 11 C 1 1E-6 1E-6 1E-3 1E-3 Time, t p (s) t p (s) Figure 7. Capacitance Stored Energy Figure 8. Non-repetitive peak forward surge current versus pulse duration (sinusoidal waveform) Thermal Resistance ( C/W) 1E-3 1E-3 1.5.3.1.5.2.1 SinglePulse 1E-3 1E-6 1E-6 1E-6 1E-3 1E-3 1E-3 1 T (Sec) Figure 9. Transient Thermal Impedance 4 C3D1665D Rev. B, 7-216
Package Dimensions Package TO-247-3 T V U W e Inches Millimeters POS Min Max Min Max.19.25 4.83 5.21 1.9.1 2.29 2.54 2.75.85 1.91 2.16 b.42.52 1.7 1.33 b1.75.95 1.91 2.41 b2.75.85 1.91 2.16 b3.113.133 2.87 3.38 b4.113.123 2.87 3.13 c.22.27.55.68 D.819.831 2.8 21.1 D1.64.695 16.25 17.65 D2.37.49.95 1.25 E.62.635 15.75 16.13 E1.516.557 13.1 14.15 E2.145.21 3.68 5.1 E3.39.75 1. 1.9 E4.487.529 12.38 13.43 e.214 BSC 5.44 BSC N 3 3 L.78.8 19.81 2.32 L1.161.173 4.1 4.4 ØP.138.144 3.51 3.65 Q.216.236 5.49 6. S.238.248 6.4 6.3 T 9 11 9 11 U 9 11 9 11 V 2 8 2 8 W 2 8 2 8 Recommended Solder Pad Layout Part Number Package Marking C3D1665D TO-247-3 C3D1665 all units are in inches TO-247-3 Note: Recommended soldering profiles can be found in the applications note here: http://www.wolfspeed.com/power_app_notes/soldering 5 C3D1665D Rev. B, 7-216
Diode Model (Per Leg) Vf T = V T + If * R T V T =.95 + (T J * -1.2*1-3 ) R T =.54 + (T J * 5.5*1-4 ) Note: T V T R j = Diode Junction Temperature In Degrees Celsius, T valid from 25 C to 175 C Notes RoHS Compliance The levels of RoHS restricted materials in this product are below the maximum concentration values (also referred to as the threshold limits) permitted for such substances, or are used in an exempted application, in accordance with EU Directive 211/65/EC (RoHS2), as implemented January 2, 213. RoHS Declarations for this product can be obtained from your Wolfpseed representative or from the Product Ecology section of our website at http:// www.wolfspeed.com/power/tools-and-support/product-ecology. RECh Compliance RECh substances of high concern (SVHCs) information is available for this product. Since the European Chemical gency (ECH) has published notice of their intent to frequently revise the SVHC listing for the foreseeable future,please contact a Cree representative to insure you get the most up-to-date RECh SVHC Declaration. RECh banned substance information (RECh rticle 67) is also available upon request. This product has not been designed or tested for use in, and is not intended for use in, applications implanted into the human body nor in applications in which failure of the product could lead to death, personal injury or property damage, including but not limited to equipment used in the operation of nuclear facilities, life-support machines, cardiac defibrillators or similar emergency medical equipment, aircraft navigation or communication or control systems, or air traffic control systems. Related Links Cree SiC Schottky diode portfolio: http://www.wolfspeed.com/power/products#sicschottkydiodes Schottky diode Spice models: http://www.wolfspeed.com/power/tools-and-support/diode-model-request2 SiC MOSFET and diode reference designs: http://go.pardot.com/l/11562/215-7-31/349i Copyright 216 Cree, Inc. ll rights reserved. The information in this document is subject to change without notice. Cree, the Cree logo, and Zero Recovery are registered trademarks of Cree, Inc. Cree, Inc. 46 Silicon Drive Durham, NC 2773 US Tel: +1.919.313.53 Fax: +1.919.313.5451 www.cree.com/power 6 C3D265D Rev., 4-216