CNY74 2H/ CNY74 4H Multichannel Optocoupler with Phototransistor Output Description The CNY74-2H and CNY74-4H consist of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in an 8-lead, resp. 16-lead plastic dual inline package. The elements are mounted on one leadframe using a coplanar technique, providing a fixed distance between input and output for highest safety requirements. Applications Galvanically separated circuits, non-interacting switches 14926 Features Emitter Coll. Coll. Emitter CNY74-2H includes 2 isolater channels CNY74-4H includes 4 isolater channels Isolation test voltage V IO = 5 kv Test class 25//21 DIN 4 45 Low coupling capacitance of typical.3 pf 14711 Current Transfer Ratio (CTR) of typical % Low temperature coefficient of CTR Wide ambient temperature range Underwriters Laboratory (UL) 1577 recognized, file number E-76222 Anode Cath. Cath. 8 PIN Anode 16 PIN CSA (C UL) 1577 recognized, file number E-76222 Double Protection Coupling System U C Order Instruction Ordering Code CTR Ranking Remarks CNY74 2H 5 to 6% 8 Pin = Dual channel CNY74 4H 5 to 6% 16 Pin = Quad channel
Absolute Maximum Ratings Input (Emitter) Parameter Test Conditions Symbol Value Unit Reverse voltage V R 6 V Forward current I F 6 ma Forward surge current 1s I FSM 1.5 A Power dissipation T amb 25C P V mw Junction temperature T j 125 C Output (Detector) Parameter Test Conditions Symbol Value Unit Collector emitter voltage V CEO 7 V Emitter collector voltage V ECO 7 V Collector current I C 5 ma Peak collector current /T =.5, 1 ms I CM ma Power dissipation T amb 25C P V 15 mw Junction temperature T j 125 C Coupler Parameter Test Conditions Symbol Value Unit AC isolation test voltage (RMS) t = 1 min V 1) IO 5 kv Total power dissipation T amb 25C P tot 25 mw Ambient temperature range T amb 4 to + C Storage temperature range T stg 55 to +125 C Soldering temperature 2 mm from case, t 1 s T sd 26 C 1) Related to standard climate 23/5 DIN 514
Electrical Characteristics (T amb = 25 C) Input (Emitter) Parameter Test Conditions Symbol Min. Typ. Max. Unit Forward voltage I F = 5 ma V F 1.25 1.6 V Output (Detector) Parameter Test Conditions Symbol Min. Typ. Max. Unit Collector emitter voltage I C = 1 ma V CEO 7 V Emitter collector voltage I E = A V ECO 7 V Collector dark current V CE = 2 V, I F =, E = I CEO na Coupler Parameter Test Conditions Symbol Min. Typ. Max. Unit DC isolation test voltage t = 2 s V 1) IO 5 kv Isolation resistance V IO = V, R 1) IO 1 12 4% relative humidity Collector emitter I F = 1 ma, I C = 1 ma V CEsat.3 V saturation voltage Cut-off frequency V CE = 5 V, I F = 1 ma, f c khz R L = Coupling capacitance f = 1 MHz C k.3 pf 1) Related to standard climate 23/5 DIN 514 Current Transfer Ratio (CTR) Parameter Test Conditions Type Symbol Min. Typ. Max. Unit I C/IF V CE = 5 V, I F = 5 ma CTR.5 1. 6. V CE = 5 V, I F = 1 ma CTR.6 1.2
Switching Characteristics Parameter Test Conditions Symbol Typ. Unit Delay time V S = 5 V, IC = 2 ma, RL = (see figure 1) t d 3. s Rise time t r 3. s Fall time t f 4.7 s Storage time t s.3 s Turn-on time t on 6. s Turn-off time t off 5. s Turn-on time V S = 5 V, IF = 1 ma, RL = 1 k (see figure 2) t on 9. s Turn-off time t off 18. s I F R G = 5 I F + 5 V I C = 2 ma ; Adjusted through input amplitude I F 96 11698 T =.1 = 5 s Channel I Oscilloscope t 95 184 5 Channel II R L = 1 M C L = 2 pf I C % 9% Figure 1. Test circuit, non-saturated operation I F I F = 1 ma + 5 V I C 1% t d t r t s t f t R G = 5 T.1 t on t off = 5 s Channel I Oscilloscope t d t r t on (= t d + t r ) pulse duration delay time rise time turn-on time t s t f t off (= t s + t f ) storage time fall time turn-off time 95 1843 5 1 k Channel II R L 1 M C L 2 pf Figure 3. Switching times Figure 2. Test circuit, saturated operation
Typical Characteristics (T amb = 25 C, unless otherwise specified) P tot Total Power Dissipation ( mw ) 96 117 3 25 2 15 5 Coupled device Phototransistor IR-diode 4 8 12 T amb Ambient Temperature ( C ) Figure 4. Total Power Dissipation vs. Ambient Temperature I CEO Collector Dark Current, with open Base ( na ) 95 1126 1 V CE =2V I F = 1 25 5 75 T amb Ambient Temperature ( C ) Figure 7. Collector Dark Current vs. Ambient Temperature I F Forward Current ( ma ).. 1. 1. I C Collector Current ( ma ) 1 1.1 V CE =5V.1.2.4.6.8 1. 1.2 1.4 1.6 1.8 2. 96 11862 V F Forward Voltage ( V ) Figure 5. Forward Current vs. Forward Voltage 95 1127.1.1 1 1 I F Forward Current ( ma ) Figure 8. Collector Current vs. Forward Current CTR rel Relative Current Transfer Ratio 2. 1.5 1..5 25 25 5 V CE =5V I F =5mA 95 1125 T amb Ambient Temperature ( C ) Figure 6. Relative Current Transfer Ratio vs. Ambient Temperature 75 I C Collector Current ( ma ) 95 1985 1 1 I F =5mA.1.1 1 1 2mA 1mA 5mA 2mA 1mA V CE Collector Emitter Voltage ( V ) Figure 9. Collector Current vs. Collector Emitter Voltage
V CEsat Collector Emitter Saturation Voltage ( V ) 95 1128 1..8.6.4.2 CTR=5% 1 1 1% 2% I C Collector Current ( ma ) Figure 1. Collector Emitter Saturation Voltage vs. Collector Current t on / t off Turn on / Turn off Time ( s ) 95 1131 5 4 3 2 1 Saturated Operation V S =5V R L =1k 5 1 15 I F Forward Current ( ma ) Figure 12. Turn on / off Time vs. Forward Current t off t on 2 CTR Current Transfer Ratio ( % ) 95 1129 1 V CE =5V 1.1 1 1 I F Forward Current ( ma ) Figure 11. Current Transfer Ratio vs. Forward Current t on / t off Turn on / Turn off Time ( s ) 95 113 1 8 6 4 2 t on t off Non Saturated Operation V S =5V R L = 2 4 6 I C Collector Current ( ma ) Figure 13. Turn on / off Time vs. Collector Current 1
Type XXXXXXXX Date Code (YM) 82 U TFK 63 1591 Pin 1 Indication Coupling System Indicator Company Logo Production Location Figure 14. Marking example Dimensions of CNY74 2 in mm weight: ca..55 g creepage distance: 6 mm air path: 6 mm after mounting on PC board 14784
Dimensions of CNY74 4 in mm weight: ca. 1. g creepage distance: 6 mm air path: 6 mm after mounting on PC board 14783