MUBW20-066K Converter - Brake - Inverter Module (CBI 1) NPT IGBT Preliminary data Three Phase Rectifier Brake Chopper RRM = 1600 CES = 600 CES Three Phase Inverter = 600 I DM25 = 95 I C25 = 12 I C25 = 25 I FSM = 250 CE(sat) = 2.25 CE(sat) = 2.0 Part name (Marking on product) MUBW20-066K E72873 Pin configuration see outlines. Features: High level of integration - only one power semiconductor module required for the whole drive Inverter with NPT IGBTs - low saturation voltage - positive temperature coefficient - fast switching - short tail current Epitaxial free wheeling diodes with hiperfast and soft reverse recovery Industry standard package with iu lated copper base plate and soldering pi for PCB mounting Temperature see included pplication: C motor drives with Input from single or three phase grid Three phase synchronous or asynchronous motor Electric braking operation Package: UL registered Industry standard E1-pack IXYS reserves the right to change limits, test conditio and dimeio. 2009 IXYS ll rights reserved 1-5
MUBW20-066K Ouput Inverter T1 - T6 Symbol Definitio Conditio min. typ. max. Unit CES collector emitter voltage T J = 25 to 150 600 GES GEM max. DC gate voltage max. traient collector gate voltage continuous traient I C25 collector current T C = 25 I C80 T C = 80 total power dissipation T C = 25 85 W CE(sat) collector emitter saturation voltage I C = 15 ; GE = 15 T J = 25 T J = 125 2.0 2.3 ±20 ±30 25 17 2.4 GE(th) gate emitter threshold voltage I C = 0.4 m; GE = CE T J = 25 4.5 6.5 I CES collector emitter leakage current CE = CES ; GE = 0 T J = 25 T J = 125 1.3 0.6 m m I GES gate emitter leakage current CE = 0 ; GE = ±20 100 n C ies input capacitance CE = 25 ; GE = 0 ; f = 1 MHz 800 pf Q G(on) total gate charge CE = 300 ; GE = 15 ; I C = 15 57 nc t d(on) t r t d(off) t f E on E off turn-on delay time current rise time turn-off delay time current fall time turn-on energy per pulse turn-off energy per pulse inductive load T J = 125 CE = 300 ; I C = 15 GE = ±15 ; R G(on) = 39 W R G(off) = 22 W I CM reverse bias safe operating area RBSO; GE = ±15 ; R G = 68 W L = 100 µh; clamped induct. load T J = 125 CEmax = CES - L S di/dt 30 t SC short circuit safe operating area CE = 600 ; GE = ±15 ; T J = 125 10 µs (SCSO) R G = 68 W; non-repetitive thermal resistance junction to case (per IGBT) 1.5 K/W thermal resistance case to heatsink (per IGBT) 0.55 K/W 30 25 160 50 0.42 0.44 Output Inverter D1 - D6 Symbol Definitio Conditio min. typ. max. Unit RRM max. repetitve reverse voltage T J = 150 600 I F25 I F80 forward current T C = 25 T C = 80 F forward voltage I F = 15 ; GE = 0 T J = 25 T J = 125 1.5 I RM t rr E rec(off) max. reverse recovery current reverse recovery time reverse recovery energy R = 300 di F /dt = -400 /µs T J = 100 I F = 15 ; GE = 0 36 24 2.1 µj thermal resistance junction to case (per diode) 1.6 K/W thermal resistance case to heatsink (per diode) 0.55 K/W 14 80 tbd IXYS reserves the right to change limits, test conditio and dimeio. 2009 IXYS ll rights reserved 2-5
MUBW20-066K Brake Chopper T7 Symbol Definitio Conditio min. typ. max. Unit CES collector emitter voltage T J = 25 to 150 600 GES GEM max. DC gate voltage max. traient collector gate voltage continuous traient I C25 collector current T C = 25 I C80 T C = 80 total power dissipation T C = 25 50 W CE(sat) collector emitter saturation voltage I C = 10 ; GE = 15 T J = 25 T J = 125 2.65 3.1 ±20 ±30 11 8 3.3 GE(th) gate emitter threshold voltage I C = 0.2 m; GE = CE T J = 25 4.5 6.5 I CES collector emitter leakage current CE = CES ; GE = 0 T J = 25 T J = 125 0.7 0.1 m m I GES gate emitter leakage current CE = 0 ; GE = ±20 120 n C ies input capacitance CE = 25 ; GE = 0 ; f = 1 MHz 220 pf Q G(on) total gate charge CE = 300 ; GE = 15 ; I C = 6 32 nc t d(on) t r t d(off) t f E on E off turn-on delay time current rise time turn-off delay time current fall time turn-on energy per pulse turn-off energy per pulse inductive load T J = 125 CE = 300 ; I C = 8 GE = ±15 ; R G(on) = 54 W R G(off) = 22 W I CM reverse bias safe operating area RBSO; GE = ±15 ; R G = 54 W L = 100 µh; clamped induct. load T J = 125 CEmax = CES - L S di/dt 18 t SC short circuit safe operating area CE = 600 ; GE = ±15 ; T J = 125 10 µs (SCSO) R G = 54 W; non-repetitive thermal resistance junction to case (per IGBT) 2.75 K/W thermal resistance case to heatsink (per IGBT) 0.9 K/W 20 10 110 30 0.21 0.26 Brake Chopper D7 Symbol Definitio Conditio min. typ. max. Unit RRM max. repetitive reverse voltage T J = 150 600 I F25 I F80 forward current T C = 25 T C = 80 F forward voltage I F = 10 ; GE = 0 T J = 25 T J = 125 1.25 I R reverse current R = RRM T J = 25 T J = 125 0.2 I RM t rr max. reverse recovery current reverse recovery time R = 100 ; I F = 12 di F /dt = -100 /µs T J = 100 21 14 2.1 0.06 m m thermal resistance junction to case (per diode) 2.5 K/W thermal resistance case to heatsink (per diode) 0.85 K/W 3.5 80 IXYS reserves the right to change limits, test conditio and dimeio. 2009 IXYS ll rights reserved 3-5
MUBW20-066K Input Rectifier Bridge D8 - D13 Symbol Definitio Conditio Maximum RRM max. repetitive reverse voltage 1600 I F I DM I FSM Temperature Seor NTC Symbol Definitio Conditio min. typ. max. Unit R 25 resistance T C = 25 4.45 4.7 B 25/85 3510 5.0 kw K Module Symbol Definitio Conditio min. typ. max. Unit T J T JM T stg operating temperature max. virtual junction temperature storage temperature -40-40 125 150 125 ISOL isolation voltage I ISOL < 1 m; 50/60 Hz 2500 ~ M d mounting torque (M4) 2.0 2.2 Nm d S d average forward current max. average DC output current max. surge forward current creep distance on surface strike distance through air Weight 40 g Equivalent Circuits for Simulation sine 180 T C = 80 rectangular; d = 1 / 3 ; bridge T C = 80 t = 10 ms; sine 50 Hz T C = 25 total power dissipation T C = 25 65 W Symbol Conditio Characteristic alues F forward voltage I F = 30 T J = 25 T J = 125 12.7 12.7 23 65 250 min. typ. max. I R reverse current R = RRM T J = 25 T J = 125 0.4 1.1 1.2 1.45 0.02 m m thermal resistance junction to case (per diode) T J = 25 1.9 K/W thermal resistance case to heatsink (per diode) 0.65 K/W mm mm I Symbol Definitio Conditio min. typ. max. Unit 0 R 0 0 rectifier diode D8 - D13 T J = 125 0.90 R 0 12 0 IGBT T1 - T6 T J = 125 1.0 R 0 70 0 free wheeling diode D1 - D6 T J = 125 1.25 R 0 13 0 IGBT T7 T J = 125 1.4 R 0 150 0 free wheeling diode D7 T J = 125 1.25 R 0 26 IXYS reserves the right to change limits, test conditio and dimeio. 2009 IXYS ll rights reserved 4-5
MUBW20-066K Outline Drawing Dimeio in mm (1 mm = 0.0394 ) Product Marking Ordering Part Name Marking on Product Delivering Mode Base Qty Ordering Code Standard MUBW 20-066K MUBW20-066K Box 10 500 103 IXYS reserves the right to change limits, test conditio and dimeio. 2009 IXYS ll rights reserved 5-5