DS 6 GS Max ± 6 * PD - 97448A EXFET Power MOSFET R DSon) max @ GS = ) 48 m R DSon) max @ GS = 4.) 64 m 6 Micro3 TM SOT-23) Applications) Load System Switch Features and Benefits Features Benefits Industry-standard pinout Multi-vendor compatibility Compatible with existing Surface Mount Techniques results in Easier manufacturing RoS compliant containing no lead, no bromide and no halogen Environmentally friendly MSL Increased reliability Absolute Maximum Ratings Symbol Parameter Max. Units DS Drain-Source oltage 6 I D @ T A = 2 C Continuous Drain Current, GS @.2 I D @ T A = 7 C Continuous Drain Current, GS @.93 A I DM Pulsed Drain Current 4.8 P D @T A = 2 C Maximum Power Dissipation.2 P D @T A = 7 C Maximum Power Dissipation.8 W Linear Derating Factor. W C GS Gate-to-Source oltage ± 6 T J, T STG Junction and Storage Temperature Range - to + C Thermal Resistance Symbol Parameter Typ. Max. Units R JA Junction-to-Ambient e R JA Junction-to-Ambient t<s) f 99 ORDERING INFORMATION: See detailed ordering and shipping information on the last page of this data sheet. Notes through are on page www.irf.com CW 392
Electric Characteristics @ T J = 2 C unless otherwise specified) Symbol Parameter Min. Typ. Max. Units Conditions BR)DSS Drain-to-Source Breakdown oltage 6 GS =, I D = 2μA BR)DSS T J Breakdown oltage Temp. Coefficient.6 C Reference to 2 C, I D =.ma R DSon) Static Drain-to-Source On-Resistance 36 48 GS =, I D =.2A d m 47 64 GS = 4., I D =.96A d GSth) Gate Threshold oltage. 2. DS = GS, I D = 2μA I DSS 2 DS = 6, GS = Drain-to-Source Leakage Current μa DS = 6, GS =, T J = 2 C I GSS Gate-to-Source Forward Leakage GS = 6 na Gate-to-Source Reverse Leakage - GS = -6 R G Internal Gate Resistance 7. gfs Forward Transconductance.6 S DS = 2, I D =.2A Q g Total Gate Charge.67 I D =.2A Q gs Gate-to-Source Charge.8 nc DS = 3 Q gd Gate-to-Drain "Miller") Charge.4 GS = 4. d t don) Turn-On Delay Time 4.9 DD = 3d t r Rise Time 3.8 I D =.2A ns t doff) Turn-Off Delay Time 3.7 R G = 6.8 t f Fall Time 2.8 GS = 4. C iss Input Capacitance 64 GS = C oss Output Capacitance 3 pf DS = 2 C rss Reverse Transfer Capacitance 6.6 ƒ =.Mz Source - Drain Ratings and Characteristics Symbol Parameter Min. Typ. Max. Units Conditions I S Continuous Source Current.2 MOSFET symbol I SM Body Diode) showing the A Pulsed Source Current integral reverse 4.8 Body Diode)Ãc p-n junction diode. SD Diode Forward oltage.2 T J = 2 C, I S =.2A, GS = d t rr Reverse Recovery Time 4 2 ns T J = 2 C, R = 3, I F =.3A Q rr Reverse Recovery Charge 8.3 2 nc didt = Aμs d 2 www.irf.com
I D, Drain-to-Source Current A) R DSon), Drain-to-Source On Resistance Normalized) I D, Drain-to-Source Current A) I D, Drain-to-Source Current A) GS TOP 8. 4. 4. 3.8 3. 3.3 BOTTOM 3. GS TOP 8. 4. 4. 3.8 3. 3.3 BOTTOM 3. 3.. 3.. 6μs PULSE WIDT Tj = 2 C.. DS, Drain-to-Source oltage ) 6μs PULSE WIDT Tj = C.. DS, Drain-to-Source oltage ) Fig. Typical Output Characteristics Fig 2. Typical Output Characteristics 2. I D =.2A GS = 2. T J = C.. T J = 2 C DS = 2 6μs PULSE WIDT 2 3 4 6 GS, Gate-to-Source oltage ).. -6-4 -2 2 4 6 8 2 4 6 T J, Junction Temperature C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance vs. Temperature www.irf.com 3
I SD, Reverse Drain Current A) I D, Drain-to-Source Current A) C, Capacitance pf) GS, Gate-to-Source oltage ) GS =, f = MZ C iss = C gs + C gd, C ds SORTED C rss = C gd C oss = C ds + C gd C iss 4. 2.. 8. I D =.2A DS = 48 DS = 3 DS = 2 C oss 6. C rss 4. 2. DS, Drain-to-Source oltage ) Fig. Typical Capacitance vs. Drain-to-Source oltage..... 2. Q G, Total Gate Charge nc) Fig 6. Typical Gate Charge vs. Gate-to-Source oltage OPERATION IN TIS AREA LIMITED BY R DS on) T J = C T J = 2 C msec msec μsec GS =...6.7.8.9.. SD, Source-to-Drain oltage ).. T A = 2 C Tj = C Single Pulse DS, Drain-to-Source oltage ) Fig 7. Typical Source-Drain Diode Forward oltage Fig 8. Maximum Safe Operating Area 4 www.irf.com
I D, Drain Current A) Thermal Response Z thja ) CW.2 DS R D..8 R G GS D.U.T. + - DD.6 GS Pulse Width µs Duty Factor.4.2. 2 7 2 T A, Ambient Temperature C) Fig 9. Maximum Drain Current vs. Ambient Temperature Fig a. Switching Time Test Circuit DS 9% % GS t don) t r t doff) t f Fig b. Switching Time Waveforms D =..2...2.. SINGLE PULSE TERMAL RESPONSE ) Notes:. Duty Factor D = tt2 2. Peak Tj = P dm x Zthja + T A. E-6 E-.... t, Rectangular Pulse Duration sec) Fig. Typical Effective Transient Thermal Impedance, Junction-to-Ambient www.irf.com
R DSon), Drain-to -Source On Resistance m ) R DS on), Drain-to -Source On Resistance m ) I D =.2A 2 8 T J = 2 C gs = 6 4 T J = 2 C gs = 4. 2 4 6 7 8 9 2 3 4 GS, Gate -to -Source oltage ) I D, Drain Current A) Fig 2. Typical On-Resistance vs. Gate oltage Fig 3. Typical On-Resistance vs. Drain Current Current Regulator Same Type as D.U.T. GS Q GS Q G Q GD 2.2 F K.3 F D.U.T. + - DS G GS 3mA Charge I G I D Current Sampling Resistors Fig 4a. Basic Gate Charge Waveform Fig 4b. Gate Charge Test Circuit 6 www.irf.com
GSth), Gate threshold oltage ) Power W) 2.8 2.6 2.4 I D = 2μA 8 2.2 6 2..8 I D = 2μA 4.6.4 2.2-7 - -2 2 7 2 T J, Temperature C ) Fig. Typical Threshold oltage vs. Junction Temperature Time sec) Fig 6. Typical Power vs. Time www.irf.com 7
, U U Micro3 SOT-23) Package Outline Dimensions are shown in millimeters inches) 6 B 6 A D 3 E E. [.6] M CBA 2 e e 4 L c A A2 C. [.4] C A 3X b.2 [.8] M C B A NOTES: Recommended Footprint.972 DIMENSIONS SYMBOL MILLIMETERS INCES MIN MAX MIN MAX A.89.2 A...4 A2.88.2 b.3. c.8.2 D 2.8 3.4 E 2. 2.64 E.2.4 e.9 BSC %6 e.9 BSC %6 L.4.6 L.4 REF REF L2.2 BSC BSC 8 8 L2.82.9 2.742 3X L 7 Micro3 SOT-23TO-236AB) Part Marking Information RW7KLSDUWPDUNLQJLQIRUPDWLRQDSSOLWRGYLFSURGXFGDIWU.9. DIMENSIONING TOLERANCING PER ANSI Y4.M-994 2. DIMENSIONS ARE SOWN IN MILLIMETERS [INCES]. 3. CONTROLLING DIMENSION: MILLIMETER. 4. DATUM PLANE IS LOCATED AT TE MOLD PARTING LINE.. DATUM A AND B TO BE DETERMINED AT DATUM PLANE. 6. DIMENSIONS D AND E ARE MEASURED AT DATUM PLANE. DIMENSIONS DOES NOT INCLUDE MOLD PROTRUSIONS OR INTERLEAD FLAS. MOLD PROTRUSIONS OR INTERLEAD FLAS SALL NOT EXCEED.2 MM [. INC] PER SIDE. 7. DIMENSION L IS TE LEAD LENGT FOR SOLDERING TO A SUBSTRATE. 8. OUTLINE CONFORMS TO JEDEC OUTLINE TO-236 AB. DATE CODE MARKING INSTRUCTIONS ; 2 % 8 7 7 3 2 7 2 ) ) ) 6 7 8 9 : ; < = 2 % ) 8 : X * 2 7 + % ) * + -. 3 3 W R N Z N R Z WK Y R E D OLQ G D W D LF G LQ K Q Z R K D U ) ) ::,)3%<67,*,72)< :2. < < :. : ::,)3%<77 < < % ) * + -. :2. :. % % ; < = : ; < = Note: For the most current drawing please refer to IR website at: http:www.irf.compackage 8 www.irf.com
Micro3 Tape Reel Information Dimensions are shown in millimeters inches) 2..8 ).9.77 ) 4..6 ) 3.9.4 ).6.62 )..6 ).8.72 ).6.6 ).32. ).2.4 ) TR 3..39 ) 3.4.36 ) 8.3.326 ) 7.9.32 ) FEED DIRECTION 4..6 ) 3.9.4 )..43 ).9.36 ).3.3 ).2. ) 78. 7.8 ) MAX. 9.9.39 ) 8.4.33 ) NOTES:. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-48 EIA-4. Note: For the most current drawing please refer to IR website at: http:www.irf.compackage www.irf.com 9
Orderable part number Package Type Standard Pack Form Quantity Micro3 SOT-23) Tape and Reel 3 Note Qualification information Qualification level Moisture Sensitivity Level RoS compliant Cons umer per JE DE C JE S D47F guidelines ) MS L Micro3 SOT-23) per IPCJE DE C J-S T D-2D ) Yes Qualification standards can be found at International Rectifier s web site http:www.irf.comproduct-inforeliability igher qualification ratings may be available should the user have such requirements. Please contact your International Rectifier sales representative for further information: http:www.irf.comwhoto-callsalesrep Applicable version of JEDEC standard at the time of product release. Notes: Repetitive rating; pulse width limited by max. junction temperature. Pulse width 4μs; duty cycle 2%. ƒ Surface mounted on in square Cu board. Refer to application note #AN-994. Data and specifications subject to change without notice. IR WORLD EADQUARTERS: N. Sepulveda Blvd., El Segundo, California 924, USA Tel: 3) 22-7 TAC Fax: 3) 22-793 isit us at www.irf.com for sales contact information. 32 www.irf.com