K817P/ K827PH/ K847PH. Optocoupler with Phototransistor Output. Vishay Telefunken. Description. Applications. Features.

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Optocoupler with Phototransistor Output K817P/ K827PH/ K847PH Description The K817P/ K827PH/ K847PH consist of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in an 4-lead up to 16-lead plastic dual inline package. The elements are mounted on one leadframe using a coplanar technique, providing a fixed distance between input and output for highest safety requirements. Applications Programmable logic controllers, modems, answering machines, general applications Features Coll. Emitter 14925 Endstackable to 2.54 mm (.1 ) spacing DC isolation test voltage V IO = 5 kv Low coupling capacitance of typical.3 pf Current Transfer Ratio (CTR) selected into groups 13929 Low temperature coefficient of CTR Wide ambient temperature range Underwriters Laboratory (UL) 1577 recognized, file number E-76222 CSA (C UL) 1577 recognized, file number E-76222 Double Protection Coupling System U Anode Cath. 4 PIN 8 PIN C 16 PIN Order Instruction Ordering Code CTR Ranking Remarks K817P 5 to 6% 4 Pin = Single channel K827PH 5 to 6% 8 Pin = Dual channel K847PH 5 to 6% 16 Pin = Quad channel K817P1 4 to 8% 4 Pin = Single channel K817P2 63 to 125% 4 Pin = Single channel K817P3 to 2% 4 Pin = Single channel K817P4 16 to 32% 4 Pin = Single channel K817P5 5 to 15% 4 Pin = Single channel K817P6 to 3% 4 Pin = Single channel K817P7 8 to 16% 4 Pin = Single channel K827P8 13 to 26% 4 Pin = Single channel K817P9 2 to 4% 4 Pin = Single channel Rev. A2, 11 Jan 99 177

Absolute Maximum Ratings Input (Emitter) Parameter Test Conditions Symbol Value Unit Reverse voltage V R 6 V Forward current I F 6 ma Forward surge current 1 s I FSM 1.5 A Power dissipation T amb 25C P V mw Junction temperature T j 125 C Output (Detector) Parameter Test Conditions Symbol Value Unit Collector emitter voltage V CEO 7 V Emitter collector voltage V ECO 7 V Collector current I C 5 ma Peak collector current /T =.5, 1 ms I CM ma Power dissipation T amb 25C P V 15 mw Junction temperature T j 125 C Coupler Parameter Test Conditions Symbol Value Unit AC isolation test voltage (RMS) t = 1 min V 1) IO 5 kv Total power dissipation T amb 25C P tot 25 mw Operating ambient temperature T amb 4 to + C range Storage temperature range T stg 55 to +125 C Soldering temperature 2 mm from case, t 1 s T sd 26 C 1) Related to standard climate 23/5 DIN 514 178 Rev. A2, 11 Jan 99

Electrical Characteristics (T amb = 25 C) Input (Emitter) Parameter Test Conditions Symbol Min. Typ. Max. Unit Forward voltage I F = 5 ma V F 1.25 1.6 V Junction capacitance V R = V, f = 1 MHz C j 5 pf Output (Detector) Parameter Test Conditions Symbol Min. Typ. Max. Unit Collector emitter voltage I C = A V CEO 7 V Emitter collector voltage I E = A V ECO 7 V Collector dark current V CE = 2 V, I F =, E = I CEO na Coupler Parameter Test Conditions Symbol Min. Typ. Max. Unit Collector emitter I F = 1 ma, I C = 1 ma V CEsat.3 V saturation voltage Cut-off frequency I F = 1 ma, V CE = 5 V, f c khz R L = Coupling capacitance f = 1 MHz C k.3 pf Current Transfer Ratio (CTR) Parameter Test Conditions Type Symbol Min. Typ. Max. Unit I C/IF V CE = 5 V, I F = 5 ma K817P CTR.5 6. V CE = 5 V, I F = 5 ma K827PH CTR.5 6. V CE = 5 V, I F = 5 ma K847PH CTR.5 6. V CE = 5 V, I F = 1 ma K817P1 CTR.4.8 V CE = 5 V, I F = 1 ma K817P2 CTR.63 1.25 V CE = 5 V, I F = 1 ma K817P3 CTR 1. 2. V CE = 5 V, I F = 1 ma K817P4 CTR 1.6 3.2 V CE = 5 V, I F = 5 ma K817P5 CTR.5 1.5 V CE = 5 V, I F = 5 ma K817P6 CTR 1. 3. V CE = 5 V, I F = 5 ma K817P7 CTR.8 1.6 V CE = 5 V, I F = 5 ma K817P8 CTR 1.3 2.6 V CE = 5 V, I F = 5 ma K817P9 CTR 2. 4. Rev. A2, 11 Jan 99 179

Switching Characteristics Parameter Test Conditions Symbol Typ. Unit Delay time V S = 5 V, I C = 2 ma, RL = (see figure 1) t d 3. s Rise time t r 3. s Fall time t f 4.7 s Storage time t s.3 s Turn-on time t on 6. s Turn-off time t off 5. s Turn-on time V S = 5 V, I F = 1 ma, RL = 1 k (see figure 2) t on 9. s Turn-off time t off 18. s I F I F + 5 V I C = 2 ma ; Adjusted through input amplitude R G = 5 T =.1 = 5 s 5 Channel I Channel II Oscilloscope R L = 1 M C L = 2 pf I F I C 96 11698 t 95 184 Figure 1. Test circuit, non-saturated operation % 9% I F I F = 1 ma + 5 V I C 1% t r t R G = 5 t d t s t f T.1 = 5 s 95 1843 5 1 k Channel I Channel II Oscilloscope R L 1 M C L 2 pf t on pulse dura- tion t d t r t on (= t d + t r ) delay time rise time turn-on time t off t s t f t off (= t s + t f ) storage time fall time turn-off time Figure 2. Test circuit, saturated operation Figure 3. Switching times 18 Rev. A2, 11 Jan 99

Typical Characteristics (T amb = 25 C, unless otherwise specified) P tot Total Power Dissipation ( mw ) 3 25 2 15 5 Coupled device Phototransistor IR-diode 4 8 12 96 117 T amb Ambient Temperature ( C ) Figure 4. Total Power Dissipation vs. Ambient Temperature I CEO Collector Dark Current, with open Base ( na ) 95 1126 1 V CE =2V I F = 1 25 5 75 T amb Ambient Temperature ( C ) Figure 7. Collector Dark Current vs. Ambient Temperature I F Forward Current ( ma ).. 1. 1. I C Collector Current ( ma ) 1 1.1 V CE =5V.1.2.4.6.8 1. 1.2 1.4 1.6 1.8 2. 96 11862 V F Forward Voltage ( V ) Figure 5. Forward Current vs. Forward Voltage 95 1127.1.1 1 1 I F Forward Current ( ma ) Figure 8. Collector Current vs. Forward Current CTR rel Relative Current Transfer Ratio 2. 1.5 1..5 25 25 5 V CE =5V I F =5mA 95 1125 T amb Ambient Temperature ( C ) Figure 6. Relative Current Transfer Ratio vs. Ambient Temperature 75 I C Collector Current ( ma ) 95 1985 1 1 I F =5mA.1.1 1 1 2mA 1mA 5mA 2mA 1mA V CE Collector Emitter Voltage ( V ) Figure 9. Collector Current vs. Collector Emitter Voltage Rev. A2, 11 Jan 99 181

V CEsat Collector Emitter Saturation Voltage ( V ) 95 1128 1..8.6.4.2 CTR=5% 1 1 1% 2% I C Collector Current ( ma ) Figure 1. Collector Emitter Saturation Voltage vs. Collector Current t on / t off Turn on / Turn off Time ( s ) 95 1131 5 4 3 2 1 Saturated Operation V S =5V R L =1k 5 1 15 I F Forward Current ( ma ) Figure 12. Turn on / off Time vs. Forward Current t off t on 2 CTR Current Transfer Ratio ( % ) 95 1129 1 V CE =5V 1.1 1 1 I F Forward Current ( ma ) Figure 11. Current Transfer Ratio vs. Forward Current t on / t off Turn on / Turn off Time ( s ) 95 113 1 8 6 4 2 t on t off Non Saturated Operation V S =5V R L = 2 4 6 I C Collector Current ( ma ) Figure 13. Turn on / off Time vs. Collector Current 1 Pin 1 Indication Type K817P 82UTK63 Date Code (YM) 158 Coupling System Company Logo Production Location Indicator Figure 14. Marking example 182 Rev. A2, 11 Jan 99

Dimensions of K817P. in mm weight: ca..25 g creepage distance: 6 mm air path: 6 mm after mounting on PC board 14789 Dimensions of K827PH in mm weight: creepage distance: air path: ca..55 g 6 mm 6 mm after mounting on PC board 14784 Rev. A2, 11 Jan 99 183

Dimensions of K847PH in mm weight: ca. 1. g creepage distance: 6 mm air path: 6 mm after mounting on PC board 14783 184 Rev. A2, 11 Jan 99