C4D812 Silicon Carbide Schottky Diode Z-Rec Rectifier RM = 12 V ( =135) = 11 Q c = 37 nc Features Package 1.2kV Schottky Rectifier Zero Reverse Recovery Current High-Frequency Operation Temperature-Independent Switching Extremely Fast Switching Positive Temperature Coefficient on V F Benefits Replace Bipolar with Unipolar Rectifiers Essentially No Switching Losses Higher Efficiency Reduction of Heat Sink Requirements Parallel Devices Without Thermal Runaway PIN 1 PIN 2 TO-22-2 CSE pplications Solar Inverters UPS Motor Drives Part Number Package Marking C4D812 TO-22-2 C4D812 Maximum Ratings (=25 C unless otherwise specified) Symbol Parameter Value Unit Test Conditions Note RM Repetitive Peak Reverse Voltage 12 V SM Surge Peak Reverse Voltage 13 V DC Peak Reverse Voltage 12 V Continuous Forward Current 23 11 8 =25 =135 =153 RM Repetitive Peak Forward Surge Current 37.5 25 =25, t P =1 ms, Half Sine Pulse =11, t P =1 ms, Half Sine Pulse SM Non-Repetitive Forward Surge Current 64 49.5 =25, t P =1 ms, Half Sine Pulse =11, t P =1 ms, Half Sine Pulse,Max Non-Repetitive Peak Forward Current 6 48 =25, t P =1 ms, Pulse =11, t P =1 ms, Pulse P tot Power Dissipation 12 52 W =25 =11 Operating Junction Range -55 to +175 T stg Storage Temperature Range -55 to +135 TO-22 Mounting Torque 1 8.8 Nm lbf-in M3 Screw 6-32 Screw 1 C4D812 Rev.
Electrical Characteristics Symbol Parameter Typ. Max. Unit Test Conditions Note V F I R Forward Voltage Reverse Current 1.5 2.2 35 1 1.8 3 25 35 Q C Total Capacitive Charge 37 nc C Total Capacitance 56 37 27 V μ pf = 8 =25 C = 8 = 12 V =25 C = 12 V = 8 V, = 8 di/dt = 2 /μs = V,, f = 1 MHz = 4 V, = 25, f = 1 MHz = 8 V, = 25, f = 1 MHz 1. Note:This is a majority carrier diode, so there is no reverse recovery charge. Thermal Characteristics Symbol Parameter Typ. Max. Unit Test Conditions Note R θjc Thermal Resistance from Junction to Case 1.26 C/W Typical Performance 14 8 12 1 =-55 C = 75 C =125 C 7 6 5 () 8 6 4 2 I R (μ) 4 3 2 1 =-55 C = 75 C =125 C.5 1 1.5 2 2.5 3 3.5 4 V F 5 1 15 2 Figure 1. Forward Characteristics Figure 2. Reverse Characteristics 2 C4D812 Rev.
Typical Performance 8 14 7 12 (peak) () 6 5 4 3 1% Duty 2% Duty 3% Duty 5% Duty 7% Duty DC P Tot (W) 1 8 6 2 4 1 2 25 5 75 1 125 15 175 25 5 75 1 125 15 175 Figure 3. Current Derating Figure 4. Power Derating 5 6 45 4 5 35 4 3 Qrr (nc) 25 2 15 C (pf) 3 2 1 1 5 2 4 6 8 1.1 1 1 1 1 Figure 5. Recovery Charge vs. Reverse Voltage Figure 6. Capacitance vs. Reverse Voltage 3 C4D812 Rev.
Typical Performance 2. 1 18. 16. E C Capacitive Energy (uj) E C (mj) 14. 12. 1. 8. 8 6. 6 SM IFSM() 1 = 11 C 4. 4 2. 2. 2 4 6 8 1 Reverse Voltage Figure 7. Typical Capacitance Stored Energy 1 1.E-5 1E-5 1E-4 1.E-4 1E-3 1.E-3 1E-2 1.E-2 tp(s) t p (s) Figure 8. Non-repetitive peak forward surge current versus pulse duration (sinusoidal waveform) Junction Thermal To Case Resistance Impedance, (/W) Z thjc ( o C/W) 1 1E-3 1E-3.5.3.1.5.2.1 SinglePulse 1E-3 1E-6 1E-6 1E-6 1E-3 1E-3 1E-3 1 Time, T (Sec) t p (s) Figure 9. Transient Thermal Impedance 4 C4D812 Rev.
Package Dimensions Package TO-22-2 POS Inches Millimeters Min Max Min Max.381.41 9.677 1.414 B.235.255 5.969 6.477 Z C D 1 2 J B E H G F S T P Q U Y X C.1.12 2.54 3.48 D.223.337 5.664 8.56 E.59.615 14.986 15.621 F.143.153 3.632 3.886 G 1.15 1.147 28.67 29.134 H.5.55 12.7 13.97 J R.197 R.197 L.25.36.635.914 M.45.55 1.143 1.397 N.195.25 4.953 5.27 L M N V W P.165.185 4.191 4.699 Q.48.54 1.219 1.372 S 3 6 3 6 T 3 6 3 6 U 3 6 3 6 V.94.11 2.388 2.794 W.14.25.356.635 X 3 5.5 3 5.5 PIN 1 PIN 2 CSE Y.385.41 9.779 1.414 z.13.15 3.32 3.81 NOTE: 1. Dimension L, M, W apply for Solder Dip Finish Recommended Solder Pad Layout TO-22-2 Part Number Package Marking C4D812 TO-22-2 C4D812 Note: Recommended soldering profiles can be found in the applications note here: http://www.cree.com/power_app_notes/soldering 5 C4D812 Rev.
Diode Model V ft = V T +If*R T V T =.96 + ( * -2.1*1-3 ) R T =.6+( * 8.*1-4 ) Note: T j = Diode Junction Temperature In Degrees Celsius, valid from 25 C to 175 C V T R T Notes RoHS Compliance The levels of RoHS restricted materials in this product are below the maximum concentration values (also referred to as the threshold limits) permitted for such substances, or are used in an exempted application, in accordance with EU Directive 211/65/EC (RoHS2), as implemented January 2, 213. RoHS Declarations for this product can be obtained from your Cree representative or from the Product Documentation sections of www.cree.com. RECh Compliance RECh substances of high concern (SVHCs) information is available for this product. Since the European Chemical gency (ECH) has published notice of their intent to frequently revise the SVHC listing for the foreseeable future,please contact a Cree representative to insure you get the most up-to-date RECh SVHC Declaration. RECh banned substance information (RECh rticle 67) is also available upon request. This product has not been designed or tested for use in, and is not intended for use in, applications implanted into the human body nor in applications in which failure of the product could lead to death, personal injury or property damage, including but not limited to equipment used in the operation of nuclear facilities, life-support machines, cardiac defibrillators or similar emergency medical equipment, aircraft navigation or communication or control systems, or air traffic control systems. Copyright 214 Cree, Inc. ll rights reserved. The information in this document is subject to change without notice. Cree, the Cree logo, and Zero Recovery are registered trademarks of Cree, Inc. Cree, Inc. 46 Silicon Drive Durham, NC 2773 US Tel: +1.919.313.53 Fax: +1.919.313.5451 www.cree.com/power 6 C4D812 Rev.