C3D5 Silicon Carbide Schottky Diode Z-Rec Rectifier RM = 5 V ( =135 C) = Q c = 1 nc Features 5-Volt Schottky Rectifier Optimized for PFC Boost Diode pplication Zero Reverse Recovery Current Zero Forward Recovery Voltage High-Frequency Operation Temperature-Independent Switching Behavior Extremely Fast Switching Positive Temperature Coefficient on V F Package TO-22-2 Benefits Replace Bipolar with Unipolar Rectifiers Essentially No Switching Losses Higher Efficiency Reduction of Heat Sink Requirements Parallel Devices Without Thermal Runaway PIN 1 PIN 2 CSE pplications Switch Mode Power Supplies Power Factor Correction Part Number Package Marking C3D5 TO-22-2 C3D5 Maximum Ratings ( = 25 C unless otherwise specified) Symbol Parameter Value Unit Test Conditions Note RM Repetitive Peak Reverse Voltage 5 V SM Surge Peak Reverse Voltage 5 V V DC DC Blocking Voltage 5 V Continuous Forward Current 13.5 =25 C =135 C =155 C Fig. 3 RM Repetitive Peak Forward Surge Current 17 =25 C, t P = 1 ms, Half Sine Wave =11 C, t P = 1 ms, Half Sine Wave SM Non-Repetitive Peak Forward Surge Current 3.5 2 =25 C, t p = 1 ms, Half Sine Wave =11 C, t p = 1 ms, Half Sine Wave Fig. 8,Max Non-Repetitive Peak Forward Surge Current 22 1 =25 C, t P = 1 µs, Pulse =11 C, t P = 1 µs, Pulse Fig. 8 P tot Power Dissipation 52 22.5 W =25 C =11 C Fig. T J, T stg Operating Junction and Storage Temperature -55 to +175 C TO-22 Mounting Torque 1 8.8 Nm lbf-in M3 Screw -32 Screw 1 C3D5 Rev. B
Electrical Characteristics Symbol Parameter Typ. Max. Unit Test Conditions Note V F I R Forward Voltage Reverse Current 1. 1.7 1.7 2. 3 Q C Total Capacitive Charge 1 nc C Total Capacitance 231 18.5 15 V μ pf = T J =25 C = T J =175 C = 5 V T J =25 C = 5 V T J =175 C = V, = di/dt = 5 /μs T J = 25 C = V, T J = 25 C, f = 1 MHz = 2 V, T J = 25 C, f = 1 MHz = V, T J = 25 C, f = 1 MHz Fig. 1 Fig. 2 Fig. 5 Fig. E C Capacitance Stored Energy 1. μj = V Fig. 7 Note: This is a majority carrier diode, so there is no reverse recovery charge. Thermal Characteristics Symbol Parameter Typ. Unit Note R θjc Thermal Resistance from Junction to Case 2.9 C/W Fig. 9 Typical Performance Fowa ard I Current, () F () T J = -55 C 1 8 T J = 75 C T J = 5 C T J = 175 C 2..5 1. 1.5 2. 2.5 3. 3.5. Foward VVoltage, F (V) V F (V) 2 8 1 Reverse Leaka age I Current, I RR (u) R (m) 2 18 1 1 1 8 2 T J = 175 C T J = 5 C T J = 75 C T J = -55 C 2 8 1 Reverse VVoltage, R (V) (V) Figure 1. Forward Characteristics Figure 2. Reverse Characteristics 2 C3D5 Rev. B
Typical Performance (peak) () () 5 5 35 3 25 2 15 1 5 1% Duty 2% Duty 3% Duty 5% Duty 7% Duty DC P P TOT Tot (W) 5 3 2 1 25 5 75 1 5 15 175 ( C) C 25 5 75 1 5 15 175 ( C) C Figure 3. Current Derating Figure. Power Derating Capacit tive Q Charge, C (nc) Q C (nc) 1 1 1 8 2 Conditions: Ca apacitance C (pf) (pf) 25 2 15 1 5 Conditions: F test = 1 MHz V test = 25 mv 1 2 3 5 7 Reverse VVoltage, R (V) (V) 1 1 1 1 Reverse VVoltage, R (V) (V) Figure 5. Total Capacitance Charge vs. Reverse Voltage Figure. Capacitance vs. Reverse Voltage 3 C3D5 Rev. B
Typical Performance 1, 3.5 Capacitance Sto ored E Energy, E C (µj) C (mj) 3 2.5 2 1.5 1.5 1 2 3 5 7 Reverse VVoltage, (V) R (V) SM FSM () 1 T J = 11 C 1 1E- 1E- 1E-3 1E-3 Time, t p (s) t p (s) Figure 7. Capacitance Stored Energy Figure 8. Non-repetitive peak forward surge current versus pulse duration (sinusoidal waveform) Thermal Resistance Thermal Resistance ( C/W) ( o C/W) 1 1E-3.5.3.1.5.2.1 SinglePulse 1E-3 1E- 1E- 1E- 1E-3 1E-3 1E-3 1 Time, T (Sec) t p (s) Figure 9. Transient Thermal Impedance C3D5 Rev. B
Package Dimensions Package TO-22-2 POS Inches Millimeters Min Max Min Max.381.1 9.77 1.1 B.235.255 5.99.77 Z C D 1 2 J B E H G F S T P Q U Y X C.1. 2.5 3.8 D.223.337 5. 8.5 E.59.15 1.98 15.21 F.13.153 3.32 3.88 G 1.15 1.17 28.7 29.13 H.5.55.7 13.97 J R.197 R.197 L.25.3.35.91 M.5.55 1.13 1.397 N.195.25.953 5.27 L M N V W P.15.185.191.99 Q.8.5 1.219 1.372 S 3 3 T 3 3 U 3 3 PIN 1 PIN 2 CSE V.9.11 2.388 2.79 W.1.25.35.35 X 3 5.5 3 5.5 Y.385.1 9.779 1.1 z.13.15 3.32 3.81 NOTE: 1. Dimension L, M, W apply for Solder Dip Finish Recommended Solder Pad Layout TO-22-2 Part Number Package Marking C3D5 TO-22-2 C3D5 Note: Recommended soldering profiles can be found in the applications note here: http://www.cree.com/power_app_notes/soldering 5 C3D5 Rev. B
Diode Model Vf T = V T + If * R T V T = 1. + (T J * -1.1*1-3 ) R T =.9 + (T J * 8.3*1 - ) Note: T V T R j = Diode Junction Temperature In Degrees Celsius, T valid from 25 C to 175 C Notes RoHS Compliance The levels of RoHS restricted materials in this product are below the maximum concentration values (also referred to as the threshold limits) permitted for such substances, or are used in an exempted application, in accordance with EU Directive 211/5/ EC (RoHS2), as implemented January 2, 213. RoHS Declarations for this product can be obtained from your Cree representative or from the Product Documentation sections of www.cree.com. RECh Compliance RECh substances of high concern (SVHCs) information is available for this product. Since the European Chemical gency (ECH) has published notice of their intent to frequently revise the SVHC listing for the foreseeable future,please contact a Cree representative to insure you get the most up-to-date RECh SVHC Declaration. RECh banned substance information (RECh rticle 7) is also available upon request. This product has not been designed or tested for use in, and is not intended for use in, applications implanted into the human body nor in applications in which failure of the product could lead to death, personal injury or property damage, including but not limited to equipment used in the operation of nuclear facilities, life-support machines, cardiac defibrillators or similar emergency medical equipment, aircraft navigation or communication or control systems, or air traffic control systems. Related Links Cree SiC Schottky diode portfolio: http://www.cree.com/diodes Schottky diode Spice models: http://response.cree.com/request_diode_model SiC MOSFET and diode reference designs: http://response.cree.com/sic_refdesigns Copyright 215 Cree, Inc. ll rights reserved. The information in this document is subject to change without notice. Cree, the Cree logo, and Zero Recovery are registered trademarks of Cree, Inc. Cree, Inc. Silicon Drive Durham, NC 2773 US Tel: +1.919.313.53 Fax: +1.919.313.551 www.cree.com/power C3D5 Rev. B