P-Channel 2 V (-) MOFET i887b PROUCT UMMARY V (V) R (on) (Ω) MAX. I (A) a, e Q g (Typ.).76 at V G = -4.5 V -2.9-2 at V G = -2.5 V -2.5 45 at V G = -.8 V -2. 7.5 nc.32 at V G = -.5 V -.5 FEATURE TrenchFET power MOFET mall.8 mm x.8 mm outline area Low.4 mm max. profile Material categorization: for definitions of compliance please see www.vishay.com/doc?9992.8 mm xxx xx Backside View MICRO FOOT.8 x.8 2 3.8 mm 4 G Bump ide View APPLICATION Load switches and chargers switches Battery management C/C converters For smart phones and tablet PCs G P-Channel MOFET Marking Code: xx = AF xxx = ate/lot traceability code Ordering Information: i887b-t2-e (lead (Pb)-free and halogen-free) ABOLUTE MAXIMUM RATING (, unless otherwise noted) PARAMETER YMBOL LIMIT UNIT rain-ource Voltage V -2 V Gate-ource Voltage V G ± 8-2.9 a Continuous rain Current (T J = 5 C) T A = 7 C T A = 7 C Pulsed rain Current (t = 3 μs) I M -5 Continuous ource-rain iode Current Maximum Power issipation T C = 25 C T A = 7 C T A = 7 C Notes a. urface mounted on " x " FR4 board with full copper, t = 5 s. b. urface mounted on " x " FR4 board with minimum copper, t = 5 s. c. Refer to IPC/JEEC (J-T-2), no manual or hand soldering. d. In this document, any reference to case represents the body of the MICRO FOOT device and foot is the bump. e. Based on. I I P -2.3 a -2. b -.7 b -.7 a -.4 b.9 a Operating Junction and torage Temperature Range T J, T stg -55 to 5 Package Reflow Conditions c VPR 26 IR/Convection 26.6 a.5 b.3 b A W C 5-346-Rev. B, 23-Feb-5 ocument Number: 62759 ARE UBJECT TO PECIFIC ICLAIMER, ET FORTH AT www.vishay.com/doc?9
i887b THERMAL REITANCE RATING PARAMETER YMBOL TYPICAL MAXIMUM UNIT Maximum Junction-to-Ambient a, b t = 5 s 5 35 R thja Maximum Junction-to-Ambient c, d t = 5 s 2 26 C/W Notes a. urface mounted on " x " FR4 board with full copper. b. Maximum under steady state conditions is 85 C/W. c. urface mounted on " x " FR4 board with minimum copper. d. Maximum under steady state conditions is 33 C/W. PECIFICATION (T J = 25 C, unless otherwise noted) PARAMETER YMBOL TET CONITION MIN. TYP. MAX. UNIT tatic rain-ource Breakdown Voltage V V G = V, I = -25 μa -2 - - V V Temperature Coefficient ΔV /T J - -2 - I = -25 μa V G(th) Temperature Coefficient ΔV G(th) /T J - 2.5 - mv/ C Gate-ource Threshold Voltage V G(th) V = V G, I = -25 μa -.4 - - V Gate-ource Leakage I G V = V, V G = ± 8 V - - ± na V = -2 V, V G = V - - - Zero Gate Voltage rain Current I V = -2 V, V G = V, T J = 7 C - - - μa On-tate rain Current a I (on) V -5 V, V G = -4.5 V -5 - - A V G = -4.5 V, I = - A -.6.76 rain-ource On-tate Resistance a R (on) V G = -2.5 V, I = - A -.8 V G = -.8 V, I = -.5 A - 45 Ω V G = -.5 V, I = -.5 A - 65.32 Forward Transconductance a g fs V = - V, I = - A - 5 - ynamic b Input Capacitance C iss - 65 - Output Capacitance C oss V = - V, V G = V, f = MHz - 9 - pf Reverse Transfer Capacitance C rss - 75 - V = - V, V G = -8 V, I = - A - 2.5 9 Total Gate Charge Q g - 7.5 2 nc Gate-ource Charge Q gs V = - V, V G = -4.5 V, I = - A - - Gate-rain Charge Q gd -.9 - Gate Resistance R g V G = - V, f = MHz - 4 - Ω Turn-On elay Time t d(on) - 2 4 Rise Time t r V = - V, R L = Ω - 2 4 Turn-Off elay Time t d(off) I - A, V GEN = -4.5 V, R g = Ω - 52 Fall Time t f - 22 45 Turn-On elay Time t d(on) - 6 5 ns Rise Time t r V = - V, R L = Ω - 2 Turn-Off elay Time t d(off) I - A, V GEN = -8 V, R g = Ω - 6 2 Fall Time t f - 23 45 5-346-Rev. B, 23-Feb-5 2 ocument Number: 62759 ARE UBJECT TO PECIFIC ICLAIMER, ET FORTH AT www.vishay.com/doc?9
i887b PECIFICATION (T J = 25 C, unless otherwise noted) PARAMETER YMBOL TET CONITION MIN. TYP. MAX. UNIT rain-ource Body iode Characteristics Continuous ource-rain iode I Current - - -.7 A Pulse iode Forward Current I M - - -5 Body iode Voltage V I = - A, V G = V - -.75 -.2 V Body iode Reverse Recovery Time t rr - 3 6 ns Body iode Reverse Recovery Charge Q rr - 4 3 nc I F = - A, di/dt = A/μs, T J = 25 C Reverse Recovery Fall Time t a - 3 - ns Reverse Recovery Rise Time t b - 7 - Notes a. Pulse test; pulse width 3 μs, duty cycle 2 % b. Guaranteed by design, not subject to production testing. tresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. 5-346-Rev. B, 23-Feb-5 3 ocument Number: 62759 ARE UBJECT TO PECIFIC ICLAIMER, ET FORTH AT www.vishay.com/doc?9
i887b TYPICAL CHARACTERITIC (25 C, unless otherwise noted) 5 V G = 5 V thru 3 V 2 V G = 2.5 V 8 9 6 V G = 2 V 6 4 T C = 25 C 3 V G =.5 V 2 T C = 25 C..5..5 2. 2.5 3. V - rain-to-ource Voltage (V) Output Characteristics T C = - 55 C..5..5 2. 2.5 V G - Gate-to-ource Voltage (V) Transfer Characteristics.4 V G =.5 V R (on) - On-Resistance (Ω).3.2 V G =.8 V V G = 2.5 V C - Capacitance (pf) 8 6 4 2 C oss C iss V G = 4.5 V. 3 6 9 2 5 On-Resistance vs. rain Current and Gate Voltage C rss 4 8 2 6 2 V - rain-to-ource Voltage (V) Capacitance 8.4 V G - Gate-to-ource Voltage (V) 6 4 2 I = A V = 5 V V = V V = 6 V R (on) - On-Resistance (Normalized).3.2...9 I = A V G = 4.5 V, 2.5 V V G =.8 V V G =.5 V 3 6 9 2 5 Q g - Total Gate Charge (nc) Gate Charge.8-5 - 25 25 5 75 25 5 T J - Junction Temperature ( C) On-Resistance vs. Junction Temperature 5-346-Rev. B, 23-Feb-5 4 ocument Number: 62759 ARE UBJECT TO PECIFIC ICLAIMER, ET FORTH AT www.vishay.com/doc?9
i887b TYPICAL CHARACTERITIC (25 C, unless otherwise noted).4 I = A.32 I - ource Current (A) T J = 5 C T J = 25 C R (on) - On-Resistance (Ω).24 6.8 T J = 25 C T J = 25 C..2.4.6.8..2.4 V - ource-to-rain Voltage (V) ource-rain iode Forward Voltage. 2 3 4 5 V G - Gate-to-ource Voltage (V) On-Resistance vs. Gate-to-ource Voltage.9 4.8.7 2 V G(th) (V).6 Power (W) 8 6.5 I = 25 μa 4.4 2.3-5 - 25 25 5 75 25 5 T J - Temperature ( C) Threshold Voltage.. Time (s) ingle Pulse Power, Junction-to-Ambient Limited by R (on) * ms ms s, s C. BV Limited V - rain-to-ource Voltage (V) * V G > minimum V G at which R (on) is specified afe Operating Area, Junction-to-Ambient 5-346-Rev. B, 23-Feb-5 5 ocument Number: 62759 ARE UBJECT TO PECIFIC ICLAIMER, ET FORTH AT www.vishay.com/doc?9 μs ms
i887b TYPICAL CHARACTERITIC (25 C, unless otherwise noted) 3..8 2.5.6 2..5. Power issipation (W).4.2.5. 25 5 75 25 5 T C - Case Temperature ( C). 25 5 75 25 5 T A - Ambient Temperature ( C) Current erating* Note When mounted on " x " FR4 with full copper. Power erating * The power dissipation P is based on T J (max.) = 5 C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. 5-346-Rev. B, 23-Feb-5 6 ocument Number: 62759 ARE UBJECT TO PECIFIC ICLAIMER, ET FORTH AT www.vishay.com/doc?9
i887b TYPICAL CHARACTERITIC (25 C, unless otherwise noted) uty Cycle =.5 Normalized Effective Transient Thermal Impedance.2 Notes:.5 P M.2 t t 2 t. uty Cycle, = t 2 2. Per Unit Base =R thja = 85 C/W 3. T JM -T A =P M Z (t) thja ingle Pulse 4. urface Mounted.... quare Wave Pulse uration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient (On " x " FR4 Board with Maximum Copper) uty Cycle =.5 Normalized Effective Transient Thermal Impedance.2 Notes: P.5 M t.2 t 2 t. uty Cycle, = t 2 2. Per Unit Base =R thja = 33 C/W 3. T JM -T A =P M Z (t) ingle Pulse thja 4. urface Mounted.... quare Wave Pulse uration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient (On " x " FR4 Board with Minimum Copper) maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for ilicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?62759. 5-346-Rev. B, 23-Feb-5 7 ocument Number: 62759 ARE UBJECT TO PECIFIC ICLAIMER, ET FORTH AT www.vishay.com/doc?9
Package Information MICRO FOOT : 4-Bump (.8 mm x.8 mm,.4 mm Pitch) e 4x Ø b XXX AK G e Mark on Backside of die 4-Ø.25 to.225 Note 5 older Mask ~Ø.25 e b A A2 A e b k Bump Note 2 Note 4 Notes () Laser mark on the backside surface of die (2) Bumps are 95.5 % n,3.8 % Ag,.7 % Cu (3) i is the location of pin (4) b is the diameter of the solderable substrate surface, defined by an opening in the solder resist layer solder mask defined. (5) Non-solder mask defined copper landing pad. IM. MILLIMETER a INCHE MIN. NOM. MAX. MIN. NOM. MAX. A.328.365.42.29.44.58 A 36 6 84.53.62.72 A2 92.25.28.76.8.86 b.2.22.24.78.86.94 b 75.68 e.4.57 6 8.2.62.7.78.72.76.8.283.299.34 K.4.7.5.27.39 Note a. Use millimeters as the primary measurement. ECN: T5-53-Rev. A, 6-Feb-5 WG: 633 Revision: 6-Feb-5 ocument Number: 69442 ARE UBJECT TO PECIFIC ICLAIMER, ET FORTH AT www.vishay.com/doc?9
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