STARPOWER SEMICONDUCTOR IGBT GD45HFY12C2S 12V/45A 2 in one-package General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as general inverters and UPS. Features Low V CE(sat) Trench IGBT technology 1μs short circuit capability V CE(sat) with positive temperature coefficient Maximum junction temperature 175 o C Low inductance case Fast & soft reverse recovery anti-parallel FWD Isolated copper baseplate using DBC technology Typical Applications Inverter for motor drive AC and DC servo drive amplifier Uninterruptible power supply Equivalent Circuit Schematic 216 STARPOWER Semiconductor Ltd. 1/27/216 1/9 SFA
Absolute Maximum Ratings T C =25 o C unless otherwise noted IGBT Symbol Description Value Unit V CES Collector-Emitter Voltage 12 V V GES Gate-Emitter Voltage ±2 V I C Collector Current @ T C =25 o C 68 @ T C =1 o C 45 A I CM Pulsed Collector Current t p =1ms 9 A P D Maximum Power Dissipation @ T j =175 o C 2173 W Diode Symbol Description Value Unit V RRM Repetitive Peak Reverse Voltage 12 V I F Diode Continuous Forward Current 45 A I FM Diode Maximum Forward Current t p =1ms 9 A Module Symbol Description Value Unit T jmax Maximum Junction Temperature 175 o C T jop Operating Junction Temperature -4 to +15 o C T STG Storage Temperature Range -4 to +125 o C V ISO Isolation Voltage RMS,f=5Hz,t=1min 4 V 216 STARPOWER Semiconductor Ltd. 1/27/216 2/9 SFA
IGBT Characteristics T C =25 o C unless otherwise noted Symbol Parameter Test Conditions Min. Typ. Max. Unit I C =45A,V GE =15V, T j =25 o C 1.7 2.5 V CE(sat) Collector to Emitter Saturation Voltage I C =45A,V GE =15V, T j =125 o C 1.95 V I C =45A,V GE =15V, T j =15 o C 2. V GE(th) Gate-Emitter Threshold Voltage I C =11.3mA,V CE =V GE, T j =25 o C 5.2 6. 6.8 V I CES Collector Cut-Off Current V CE =V CES,V GE =V, T j =25 o C 1. ma I GES Gate-Emitter Leakage Current V GE =V GES,V CE =V, T j =25 o C 4 na R Gint Internal Gate Resistance 1.7 Ω t d(on) Turn-On Delay Time 328 ns t r Rise Time 76 ns t d(off) Turn-Off Delay Time 539 ns V CC =6V,I C =45A, t f Fall Time 18 ns R G =1.5Ω,V GE =±15V, Turn-On Switching E T j =25 o on C 19.5 mj E off Turn-Off Switching 46.6 mj t d(on) Turn-On Delay Time 376 ns t r Rise Time 86 ns t d(off) Turn-Off Delay Time 595 ns V CC =6V,I C =45A, t f Fall Time 214 ns R G =1.5Ω,V GE =±15V, Turn-On Switching E T j =125 o on C 36.3 mj E off Turn-Off Switching 53.5 mj t d(on) Turn-On Delay Time 38 ns t r Rise Time 89 ns t d(off) Turn-Off Delay Time 68 ns V CC =6V,I C =45A, t f Fall Time 232 ns R G =1.5Ω,V GE =±15V, Turn-On Switching E T j =15 o on C 41.7 mj E off Turn-Off Switching 55.5 mj I SC SC Data t P 1μs,V GE =15V, T j =15 o C,V CC =8V, V CEM 12V 18 A 216 STARPOWER Semiconductor Ltd. 1/27/216 3/9 SFA
Diode Characteristics T C =25 o C unless otherwise noted Symbol Parameter Test Conditions Min. Typ. Max. Unit I Diode Forward F =45A,V GE =V,T j =25 o C 1.65 2.1 V F I V Voltage F =45A,V GE =V,T j =125 o C 1.65 I F =45A,V GE =V,T j =15 o C 1.65 Q r Recovered Charge 29.4 μc Peak Reverse V CC =6V,I F =45A, I RM 275 A Recovery Current -di/dt=437a/μs,v GE =-15V, Reverse Recovery T j =25 o C E rec 13.2 mj Energy Q r Recovered Charge 68.8 μc Peak Reverse V CC =6V,I F =45A, I RM 342 A Recovery Current -di/dt=437a/μs,v GE =-15V, Reverse Recovery T j =125 o C E rec 31.6 mj Energy Q r Recovered Charge 79.6 μc Peak Reverse V CC =6V,I F =45A, I RM 354 A Recovery Current -di/dt=437a/μs,v GE =-15V, Reverse Recovery T j =15 o C E rec 35.8 mj Energy Module Characteristics T C =25 o C unless otherwise noted Symbol Parameter Min. Typ. Max. Unit L CE Stray Inductance 2 nh R CC +EE Module Lead Resistance, Terminal to Chip.35 mω R thjc R thch Junction-to-Case (per IGBT) Junction-to-Case (per Diode) Case-to-Heatsink (per IGBT) Case-to-Heatsink (per Diode) Case-to-Heatsink (per Module).115.18.35.69.18 K/W K/W Terminal Connection Torque, Screw M6 2.5 5. M N.m Mounting Torque, Screw M6 3. 5. G Weight of Module 3 g 216 STARPOWER Semiconductor Ltd. 1/27/216 4/9 SFA
9 9 75 V GE =15V 75 V CE =2V 6 6 I C [A] 45 I C [A] 45 3 3 15 Tj=25 Tj=125 Tj=15.5 1 1.5 2 2.5 3 3.5 V CE [V] 15 Tj=25 Tj=125 Tj=15 5 6 7 8 9 1 11 12 13 V GE [V] Fig 1. IGBT Output Characteristics Fig 2. IGBT Transfer Characteristics 16 14 12 Eon Tj=125 Eoff Tj=125 Eon Tj=15 Eoff Tj=15 22 2 18 16 Eon Tj=125 Eoff Tj=125 Eon Tj=15 Eoff Tj=15 1 14 E [mj] 8 E [mj] 12 1 6 8 4 2 V CC =6V R G =1.5Ω V GE =±15V 15 3 45 6 75 9 I C [A] 6 4 2 V CC =6V I C =45A V GE =±15V 3 6 9 12 15 R G [Ω] Fig 3. IGBT Switching vs. I C Fig 4. IGBT Switching vs. R G 216 STARPOWER Semiconductor Ltd. 1/27/216 5/9 SFA
1.1 9 8 7 Module IGBT I C [A] 6 5 4 Z thjc [K/W].1 3 2 1 R G =1.5Ω V GE =±15V T j =15 o C 2 4 6 8 11214 V CE [V] i: 1 2 3 4 r i [K/W]:.39.229.221.21 τ i [s]:.1.2.5.1.1.1.1.1 1 1 t [s] Fig 5. RBSOA Fig 6. IGBT Transient Thermal Impedance 9 75 Tj=25 Tj=125 Tj=15 5 4 Erec Tj=125 Erec Tj=15 6 3 I F [A] 45 3 E [mj] 2 15 1 V CC =6V R G =1.5Ω V GE =-15V.4.8 1.2 1.6 2 2.4 V F [V] 15 3 45 6 75 9 I F [A] Fig 7. Diode Forward Characteristics Fig 8. Diode Switching vs. I F 216 STARPOWER Semiconductor Ltd. 1/27/216 6/9 SFA
E [mj] 5 4 3 2 Erec Tj=125 Erec Tj=15 Z thjc [K/W] 1.1.1 Diode 1 V CC =6V I F =45A V GE =-15V 3 6 9 12 15 R G [Ω] i: 1 2 3 4 r i [K/W]:.64.356.346.314 τ i [s]:.1.2.5.1.1.1.1.1 1 1 t [s] Fig 9. Diode Switching vs. R G Fig 1. Diode Transient Thermal Impedance 216 STARPOWER Semiconductor Ltd. 1/27/216 7/9 SFA
Circuit Schematic Package Dimensions Dimensions in Millimeters 216 STARPOWER Semiconductor Ltd. 1/27/216 8/9 SFA
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