NSR-2205i14E (6" Reticle Type)

Step-and-Repeat System NSR-2205i14E (6" Reticle Type) ACCEPTANCE TEST Nikon Precision Inc. January 9, 1998 JCW 1/98 22i14EAT01

1 NSR-2205i14E ACCEPTANCE TEST ITEMS (6" Reticle Type) No. Item Specification Condition 1 Resolution 0.35µm or less High resolution, positive resist film of 1.0µm thickness 2 Focus Calibration Repeatability Within 80nm (3σ) 20 measurements 3 Lens Distortion (including magnification error) Within ± 30nm 37 points / chip 4 Magnification Control Within ± 15nm 3 measurements of Initial, Heat (150min.) and Cool (180min.) 5 Maximum Exposure Area Within 31.11mm dia. 22.0mm x 22.0mm to 17.96mm x 25.2mm (horz.) (vert.) 6 Reticle Blind Setting Accuracy + 0.4 to + 0.8mm (on reticle) 7 Exposure Power 1100 mw/cm 2 or more Measured after a new lamp is installed 8 Integrated Exposure Stability (including integrated exposure matching) Within ± 1.0% (75 mj/cm 2 or more) Within ± 0.5% (at 100mJ/cm 2 ) Input Exposure Time: 150, 200, 400, 800 msec. 1

2 No. Item Specification Condition 9 Illumination Uniformity Within ± 1.0% Inside exposure area 5 measurements 10 Reticle Rotation M + 3σ 15nm Center of RR target value 11 Alignment Accuracy (FIA, LSA and LIA) M + 3σ 40nm Center only M + 3σ 50nm Center and 4 corners Resist on image EGA 8 point sampling 12 Array Orthogonality Within ± 0.1 sec After compensation with software Average of 3 wafers 13 Stepping Precision 3σ 30nm Measurements from 2 wafers 14 Wafer Prealignment repeatability 3σ 15µm For each X, Y and θ axis 60 measurements / 1 wafer 15 Throughput FIA-EGA LSA-EGA LIA-EGA* 120 wph (150 mm) 87 wph (200 mm) 108 wph (150 mm) 80 wph (200 mm) 103 wph (150 mm) 77 wph (200 mm) 2nd print, EGA 8 points sampling 150 mm wafer size: 32 shots 200 mm wafer size: 60 shots Step pitch 22mm x 22mm Exposure time = 0.082 sec 2

3 No. Item Specification Condition 16 Operational Test 1) Wafer transfer system 1) success rate: 100% 1) Consecutive printing of 100 wafers, 2nd print 2) Reticle transfer system 2) success rate: 100% 2) Excute a reticle change once for each slot 17 Leveling Accuracy Within ± 1.5 sec On lens image plane 10 measurements 18 Leveling Repeatability Within ± 1.0 sec 10 measurements Note: Item * marked is option. MES (Measurement & Evaluation System) is used for measurement. Nikon Recommended Conditions for MES: Resist type: High resolution, positive resist. Resist thickness: 1.20 µm thickness 3

4 NSR-2205i14E ACCEPTANCE TEST METHODS AND CONDITIONS (6" Reticle Type) Note: The Leveling system should be ON for test items listed in this acceptance test procedure. 0. Measurement Accuracy of NSR (MES usage condition) 0.1 The measurement accuracy of NSR shall be determined using Measure (LSA or FIA). 0.2 The photoresist specified by Nikon shall be used. The film thickness of the photoresist shall be 1.20µm. The followings are the guaranteed types of photoresist: i-line: THMR-iP1800 (Tokyo Ohka Kogyo) PFi-34 (Sumitomo Chemical) 0.3 Use of any other photoresist or conditions is subject to discussion between the customer and NPI. 1. RESOLUTION 1.0 Illumination Condition: Lens NA = 0.63, σ = 0.60 1.1 Test Reticle: R2205HCD Ver. 4.09 or later Wafer: One bare silicon wafer 1.2 Exposure: Process Data: Program Data: Exposure Condition: Focus Pitch: 22QIK5 22QIK5 Best exposure time 0.2µm 1.3 Photoresist: High resolution, positive resist film of 1.0µm thickness 1.4 Development: Tokyo Ohka NMD-3 (2.38%) 60 sec. Auto-puddle 1.5 Measurement: Optical microscope or SEM Linewidth: 0.35µm line and space V/H Evaluation Points: 5 points shown at Fig. 1.1. 4

5 1.6 Judgment: Verify the 0.35µm line and space positive patterns are separated at all 5 points in the field for vertical and horizontal orientations at the best focus. UL (-10700, 10700) UR (10700, 10700) C (0,0) LL (-10700, -10700) LR (10700, -10700) Fig. 1.1 Resolution Evaluation Points 2. FOCUS CALIBRATION REPEATABILITY 2.1 Test Reticle: R2205HA Ver. 7.22 or later 2.2 Measurement: DIAGNOSIS, CALIBRATE command 2.3 Judgment: Take 20 measurements and calculate 3σn-1. 3. LENS DISTORTION (Including Magnification Error) 3.0 Illumination Condition: Lens NA = 0.63, σ = 0.60 3.1 Test Reticle: R2205HDIS Ver. 5.283 Wafer: Three Nikon Standard DIS bare silicon wafers (for 6 wafer) One Nikon Standard DIS bare silicon wafer (for 8 wafer) 3.2 Exposure: Process Data: 22nMW Program Data: EXP Note: The letter n appearing in process data names denotes wafer size in inches. 5

6 3.3 Measurement: Registration Metrology or FIA-AMS (MEASURE command in the DIAGNOSIS group) SMCP File: 22nDIS_FIA_2 (for distortion measurement) Evaluation Points: 37 points per chip shown at Fig. 3.1. 6" wafer : 33 shots (11 shots X 3 wafers) 8" wafer : 21 shots (21 shots X 1 wafer) 3.4 Calculation: Use distortion calculation command in the Maintenance System V. 6" wafer : Average of 33 shots 8" wafer : Average of 21 shots Correct the Nikon Standard DIS-wafer error data by using DISBSE conversion software in the Maintenance System V. Convert the measured values in sign according to each individual quadrant. Correct the reticle error. Compensate the reticle rotation error by minimizing the rotation vectors of 37 points using the least squares method. Input the compensated value as a machine constant. The final lens distortion data is the measurement value at each field position minus the measurement value at the field center. The final distortion value at the field center will be zero. 3.5 Judgment: Evaluate the lens distortion in both X and Y directions. 6

7 Y X 8mm 14mm 20mm 22mm 12X24mm :DL :DR Fig. 3.1 Measurement Points for Lens Distortion 4. MAGNIFICATION CONTROL 4.0 Illumination Condition: Lens NA = 0.63, σ = 0.60 4.1 Test Reticle: R2205HB Ver. 7.21 or later Wafer: Four bare silicon wafers 4.2 Exposure: Use LC Data Collection command in the Maintenance System V. Process Data: 22nUSR2B Program Data: LCM Sequence: Shown at Fig. 4.1 Shutter open time = 1000 (msec) Shutter close time = 3.95 x Power - 1000 (msec) 4.3 Measurement: MEASURE command in the DIAGNOSIS group SMCP File: Evaluation Points: 22nLCM_LSA_2 Measure the X component of vernier scale A and the Y component of vernier scale B as shown in Fig. 4.2. 7

8 Measurement points and number of wafers are as follows: Measurement Wafer Size (mm) Points Per Wafer 150 26 200 35 Calculate the mean value of each axis. Magnification errors are ( Χ and Υ )/4. 4.4 Judgment: The magnification control is acceptable if the magnification variations at the heat and cool times relative to the initial data are within specification. Initial Heat 150 min 180 min Cool Open Shutter closed Fig. 4.1 Measurement Sequence of Magnification Control Y B X A Fig. 4.2 Magnification Control Measurement Points 5. MAXIMUM EXPOSURE AREA 8

9 5.0 Illumination Condition: Lens NA = 0.63, σ = 0.60 5.1 Test Reticle: R2205HB Ver. 7.21 or later Wafer: One bare silicon wafer 5.2 Exposure Process Data: Program Data: Exposure Condition: 22nUSR2B RB Best exposure time, best focus 5.3 Measurement: Optical microscope 5.4 Judgment: Verify that all portions on the outermost edges of the test reticle are printed. 6. RETICLE BLIND SETTING ACCURACY 6.0 Use the wafer of item 5 - Maximum Exposure Area. 6.1 Measurement: Optical microscope Evaluation Points: Read the blind setting value from the position scale as shown in Fig. 6.1. 6.2 Judgment: All scales should be printed within specification. 2 1 0 1 2 Fig. 6.1 Reticle Blind Measurement Scale 7. EXPOSURE POWER 9

10 7.0 Illumination Condition: Lens NA = 0.63, σ = 0.60 7.1 Power Meter: Nikon irradiance meter 7.2 Measurement: Integrated Exposure Stability measurement command in the Maintenance System V Measure the exposure power after a new lamp has been installed. 7.3 Judgment: The exposure power indicated on the Nikon irradiance meter should be equal to or greater than the specification. 8. INTEGRATED EXPOSURE STABILITY 8.0 Illumination Condition: Lens NA = 0.63, σ = 0.60 8.1 Power Meter: Nikon irradiance meter 8.2 Measurement: Integrated Exposure Stability measurement command in the Maintenance System V Exposure Power: Points: Input Shutter time: 1 point with IDLE mode. Use the average value of 5 points within the shot (center and 4 corners of 10mm square). 150, 200, 400 and 800msec. 8.3 Judgment: Performance is acceptable when the difference between the actual power exposure energy and the setting energy (input shutter open time X 500 mw/cm 2) is within specification. Er - Ei X 100 1.0% (75 mj/cm 2 or more) Ei 0.5% (100 mj/cm 2 ) Ei = input shutter open time X 500 mw/cm 2 Er = actual exposure energy Note 1: 500 mw/cm 2 is used as a standard exposure power for interchangeability with conventional models. Note 2: Test condition - Actual exposure power should be 150 to 1100 mw/cm 2. The exposure energy should be 75 mj/cm 2 or more. 10

mj/cm2 400 Theoretical Value 200 ure energy 100 Error 50 msec 100 200 400 800 Entered Shutter-open Time Fig. 8.1 Integrated Exposure Stability 9. ILLUMINATION UNIFORMITY 9.0 Illumination Condition: Lens NA = 0.63, σ = 0.60 9.1 Measurement: LAMP command in the DIAGNOSIS group Data File: 22LAMP_2 Number of measurements: 5 Wait at least 30 minutes after the lighting the Hg lamp before taking measurement. 9.2 Judgment: All the measurement results should be within specification. 10. RETICLE ROTATION 10.1 Test Reticle: R2205HDIS Ver. 5.283 Wafer: One bare silicon wafer 11 11

12 10.2 Exposure Process Data: Program Data: 22nUSR2D RR1 to RR20 Expose wafers by using RR1 to RR20 without unloading the wafer. Perform reticle alignment for every RR data setting. Setting of SET system parameters in the SYSTEM group Reticle Driving Before Exposure: ON Reticle Driving During Shooting: ON Setting of EXECUTE exposure in the PROCESS group Reticle operation: Alignment only Wafer operation: Exposure only Carrier mode: Old 10.3 Measurement: MEASURE command in the DIAGNOSIS group SMCP File: Evaluation Points: 22nRR20_LSA_2 500 points (25 points/rr X 20 rows) Measure the Y components of the vernier scales shown in Fig. 10.1 and Fig. 10.2. 10.4 Judgment: Evaluate reticle rotation as follows: Reticle Rotation = M +3σn-1 M = (Σ Y i / 20) / 2 (RE/2) (RR target value) [i=1 to 20] Y i : average of each RRi [i=1 to 20, n=25] Re : Reticle Fabrication Error RR target value: [DR(Y) DL(Y)]/2 DR(Y), DL(Y): Y vernier value shown as Fig. 3.1 12

13 BL1 BL2 BL3 BL18 BL19 BL20.... BL1 BL20 RR1 RR20 Fig. 10.1 Reticle Rotation RR1 RR2. RR19 RR20 Fig. 10.2 Reticle Rotation Within BL 11. ALIGNMENT ACCURACY 11.1 Test Reticle: R2205HA Ver. 7.22 or later Wafer: Ten bare silicon wafers / One sensor 11.2 Exposure 13

14 Process Program Data: 22nUSR2A.REG1 (for first print) 22nUSR2A.FIA (for FIA second print) 22nUSR2A.EGA (for LSA second print) 22nUSR2A.LIA (for LIA second print) Wafer Alignment: Evaluate the overlay of resist images. Use LSA-EGA wafer alignment (8 EGA sample points per wafer). Perform reticle alignment check and baseline check for every 2 wafers. 11.3 Measurement: MEASURE command in the DIAGNOSIS group SMCP File: 22nREG05_LSA_2 Evaluation Points: 1000 points (5 points/shot X 20 shots/wafer X 10 wafers) 11.4 Judgment: Evaluate alignment accuracy as follow : Alignment Accuracy = M + 3σn-1 n = 200 (center) n = 1000 (center and 4 corners) Evaluate the alignment accuracy in both X and Y directions separately. 12. ARRAY ORTHOGONALITY 12.1 Test Reticle: R2205HB Ver. 7.21 or later Wafer: Three bare silicon wafers 12.2 Exposure Process Data: Program Data: 22nUSR2B ORT1 (for first print) 12.3 Measurement Process Data: 22nUSR2B Program Data: ORTM (for second 0 measurement) ORTM90 (for second 90 measurement) Measure the wafer by using FIA-EGA measurement. 14

15 12.4 Judgment: Evaluate array orthogonality as follows: After all necessary array orthogonality corrections have been made through software, make final judgment based on the average of measurement values from 3 wafers. Array Orthogonality = (ORT 0 + ORT 90 )/2 0.48 x 10-6 rad (= 0.1 sec) ORT 0 : measurement result of ORTM ORT 90 : measurement result of ORTM90 13. STEPPING PRECISION 13.1 Test Reticle: R2205HA Ver. 7.22 or later Wafer: Two bare silicon wafers 13.2 Exposure Process Data: Program Data: 22nUSR2A STEP 13.3 Measurement: MEASURE command in the DIAGNOSIS group SMCP File: Evaluation Points: 22nSTEP_LSA_2 Measure the X component of vernier scale A and the Y component of vernier scale B as shown in Fig. 4.2. Measurement points and number of wafers are as follows: Measurement Wafer Size (mm) Points Per Wafer 150 26 200 35 13.4 Judgment: Calculate the 3σn-1 per each wafer. Evaluate the stepping precision in both X and Y directions separately. 15

16 14. WAFER PREALIGNMENT REPEATABILITY 14.1 Test Reticle: R2205HB Ver. 7.21 or later Wafer: One bare silicon wafer 14.2 Exposure Process Data: Program Data: 22nUSR2B ORT1 14.3 Measurement: Wafer Prealignment Repeatability measurement command in the Maintenance System V Process Data: 22nUSR2B Program Data: WLREP Number of Measurements: 60 14.4 Judgment: Calculate 3σ n-1 for X, Y and θ axes, separately. 15. THROUGHPUT 15.1 Test Reticle: R2205HA Ver. 7.22 or later Wafer: 13 bare silicon wafers / One sensor 15.2 Exposure Process Program Data: 22nUSR2A.THRPT1 (for first print) 22nUSR2A.THRPTF (for FIA second print) 22nUSR2A.THRPTE (for LSA second print) 22nUSR2A.THRPTL (for LIA second print) Wafer Alignment: Exposure Time: Evaluate the overlay of resist images. Use EGA wafer alignment (8 EGA sample points per wafer). 82 msec., timer mode 15.3 Measurement: Measure the time interval from the completion of exposure of the first shot on the second wafer to the completion of exposure of the first shot on the 12th wafer. 15.4 Judgment: Calculate the throughput per hour by using the results of item 15.3. 16

17 16. OPERATIONAL TEST 16.1 Wafer Transfer System 16.1.1 Test Reticle: R2205HA Ver. 7.22 or later Wafer: 50 bare silicon wafers 16.1.2 Exposure Process Data 22nUSR2A Program Data: THRPT1 (for first print) Program Data: ALRUN (for second print) Second Print: Evaluate the overlay of resist images. Use LSA-EGA wafer alignment (3 EGA sample points per wafer). Perform resist image 2nd print operation on 100 wafers consecutively(50 wafers X 2 times). 16.1.3 Judgment: No errors which cannot be recovered from through software control are allowed. 16.2 Reticle Transfer System 16.2.1 Test Reticle: Any reticle 16.2.2 Execute the reticle change operation once for each slot. 16.2.3 Judgment: The transfer motion should be smooth and free from stops due to errors. 17. CHIP LEVELING ACCURACY 17.0 Illumination Condition: Lens NA = 0.63, σ = 0.60 17.1 Image Plane Angle 17.1.1 Test reticle: R2205HMF Ver. 6 series or later Wafer: 1 bare silicon wafer 17

18 17.1.2 Exposure Leveling Off. Process Program Data: 22MF096.INC09 Exposure Condition: Best exposure time Focus Pitch: 0.3µm 17.1.3 Photoresist: Positive photoresist, 1.2µm thick 17.1.4 Development: Tokyo Ohka NMD-3 (2.38%) 60 sec. Autopuddle 17.1.5 Measurement: MEASURE command in the DIAGNOSIS group (Per MEASURE command operating conditions) SMCP file: 22INCF09H Linewidth: 0.35µm line and space V/H Evaluation Points: 9 points shown at Fig. 17.1. (18 points total, vertical and horizontal separately) 17.1.6 Image Plane Angle: Take best focus measurements for 9 evaluation points (18 points total, vertical and horizontal separately) and store the measurement data in a file. Read the stored file by using a tool software and obtain an estimate of wafer plane tilt (X, Y two directions). This is the image plane angle (θx0, θ Y0 ). UL LE LL UC CE LC UR RI LR CE = UR = UC = UL = LE = LL = LC = LR = RI = 5" Reticle, 20mm ( 0, 0 ) ( 9700, 9700 ) ( 0, 9700 ) (-9700, 9700 ) (-9700, 0 ) (-9700, -9700 ) ( 0, -9700 ) ( 9700, -9700 ) ( 9700, 0 ) 6" Reticle, 22mm ( 0, 0 ) ( 10700, 10700 ) ( 0, 12000 ) (-10700, 10700 ) (-10700, 0 ) (-10700, -10700 ) ( 0, -12000 ) ( 10700, -10700 ) ( 10700, 0 ) Fig. 17.1 Image Plane Angle Evaluation Points 18

19 θy0 θx0 θ X0 θ Y0 (deg) Fig. 17.2 Image Plane Angle 17.2 Reference Leveled Wafer Plane 17.2.1 Wafer: Use a bare silicon wafer (without resist) with flatness within 2µm. 17.2.2 Measurement: FLATNESS command in the DIAGNOSIS group Process Program Data: Measurement number: 22nLEVEL.LEVEL Map Size: 20 X 20 Step Pitch: 1000 X 1000 (µm) Wafer center leveling: ON Shot center leveling: OFF Ave. number: 20 10 consecutive measurements without unloading the wafer. Store each measurement result in the file. 17.2.3 Leveled wafer plane angle: Read the stored files by using the tool software and determine the approximate image plane tilt (for both X and Y directions). This is the leveled wafer plane angle (θ XLi, θ YLi ). 17.2.4 Reference leveled wafer plane angle: Average the 10 measurements of the leveled wafer plane angle. This is the reference leveled wafer plane angle (θ XL, θ YL ). 19

20 θ Leveled wafer plane angle : YLi (deg) θ XLi θ YLi θ XLi Reference leveled wafer θ XL = ( Σ θ XLi ) /10 plane angle : θ YL = ( Σ θ YLi ) /10 (deg) ( i = 1 to 10) Fig. 17.3 Measurement of the leveled wafer plane angle 17.3 Judgment: Evaluate the difference between the image plane angle (Item 17.1.6) and the reference leveled wafer plane angle (Item 17.2.4). Evaluate θ X, θ Y separately. θ X : -1.5 (θ XL - θ X0 ) +1.5 θ Y : -1.5 (θ YL - θ Y0 ) +1.5 (sec) 18. CHIP LEVELING REPEATABILITY 18.1 Use the reference leveled wafer plane angle and the leveled wafer plane angle in Item 17.2. 18.2 Judgment: The machine performance is acceptable if the maximum and minimum values of the leveled wafer plane angles θ XLi and θ YLi (i = 1 to 10) according to Item 17.2.3 do not differ by more than ±1.0 seconds from the reference leveled wafer plane angles θ XL and θ YL determined in Item 17.2.4. Evaluate θ X and θ Y separately. θ X: -1.0 (Min. θ XLi - θ XL ) +1.0 (Max. θ XLi - θ XL ) θ y: -1.0 (Min. θ YLi - θ YL ) +1.0 (Max. θ YLi - θ YL ) (i = 1 to 10) 20

21 NSR-2205i14E ACCEPTANCE TEST RESULTS (6" Reticle Type) Serial No.: Acceptance Test Completion Date: Inspected By: User's Machine ID: No. Item Specification Result 1 Resolution 0.35µm or less 2 Focus Calibration Repeatability Within 80nm (3σ) 3 Lens Distortion (including magnification error) Within ± 30nm 4 Magnification Control Within ± 15nm 5 Maximum Exposure Area Within 31.11mm dia. 22.0mm x 22.0mm to 17.96mm x 25.2mm (hor.) (vert.) 6 Reticle Blind Setting Accuracy + 0.4 to + 0.8mm (on reticle) 7 Exposure Power 1100 mw/cm 2 or more 8 Integrated Exposure Stability (including integrated exposure matching) Within ± 1.0% (75 mj/cm 2 or more) Within ± 0.5% (at 100mJ/cm 2 ) 21

22 No. Item Specification Result 9 Illumination Uniformity Within ± 1.0% 10 Reticle Rotation M + 3σ 15nm 11 Alignment Accuracy (LSA, FIA, and LIA) FIA-EGA M + 3σ 40nm Center only M + 3σ 50nm Center and 4 corners LSA-EGA M + 3σ 40nm Center only M + 3σ 50nm Center and 4 corners LIA-EGA* M + 3σ 40nm Center only M + 3σ 50nm Center and 4 corners 12 Array Orthogonality Within ± 0.1 sec 13 Stepping Precision 3σ 30nm 14 Wafer Prealignment repeatability 3σ 15µm 22

23 No. Item Specification Result 15 Throughput FIA-EGA 120 WPH (150mm) 87 WPH (200mm) LSA-EGA 108 WPH (150mm) 80 WPH (200mm) LIA-EGA 103 WPH (150mm) 77 WPH (200mm) 16 Operational Test 1) Wafer transfer system 1) success rate: 100% 2) Reticle transfer system 2) success rate: 100% 17 Leveling Accuracy Within ± 1.5 sec 18 Leveling Repeatability Within ± 1.0 sec Note: Item * marked is option. MES (Measurement & Evaluation System) is used for measurement. Nikon Recommended Conditions for MES: Resist type: High resolution, positive resist. Resist thickness: 1.20 µm thickness 23