MIXW1TMH Six-Pack XPT IGBT S = 1 2 = 28 (sat) = 1.8 Part name (Marking on product) MIXW1TMH P T1 T3 T D1 D3 D NTC1 G1 G3 G U W NTC2 T2 T4 T6 D2 D4 D6 G2 G4 G6 E 72873 Pin configuration see outlines. EU E EW Features: High level of integration - only one power semiconductor module required for the whole drive Rugged XPT design (Xtreme light Punch Through) results in: - short circuit rated for 1 µsec. - very low gate charge - square RBSO @ 3x - low EMI Thin wafer technology combined with the XPT design results in a competitive low (sat) Temperature see included SONIC diode - fast and soft reverse recovery - low operating forward voltage pplication: C motor drives Pumps, Fa Washing machines ir-conditioning system Inverter and power supplies Package: "Mini" package ssembly height is 17 mm Iulated base plate Pi suitable for wave soldering and PCB mounting ssembly clips available - IXKU - screw clamp - IXRB -6 click clamp UL registered E72873 91127a 9 IXYS ll rights reserved 1-6
MIXW1TMH IGBT T1 - T6 Symbol Definitio Conditio min. typ. max. Unit S collector emitter voltage = 2 C 1 GES GEM max. DC gate voltage max. traient collector gate voltage continuous traient 2 collector current T C = 2 C 8 T C = 8 C P tot total power dissipation T C = 2 C 1 W (sat) collector emitter saturation voltage = 16 ; GE = 1 = 2 C 1.8 2.1 ± ±3 28 2.1 GE(th) gate emitter threshold voltage =.6 m; GE = = 2 C.4.9 6. ES collector emitter leakage current = S ; GE = = 2 C.1.1 m m I GES gate emitter leakage current GE = ± n Q G(on) total gate charge = 6 ; GE = 1 ; = 1 48 nc t d(on) t r t d(off) t f E on E off turn-on delay time current rise time turn-off delay time current fall time turn-on energy per pulse turn-off energy per pulse inductive load = 6 ; = 1 GE = ±1 ; R G = 6 W RBSO reverse bias safe operating area GE = ±1 ; R G = 6 W; K = 1 I SC short circuit safe operating area = 9 ; GE = ±1 ; (SCSO) R G = 6 W; t p = 1 µs; non-repetitive R thjc R thch thermal resistance junction to case thermal resistance case to heatsink (per IGBT) 7 4 2 1 1. 1.7 mj mj 4 6.42 1.26 K/W K/W Diode D1 - D6 Symbol Definitio Conditio min. typ. max. Unit RRM max. repetitve reverse voltage = 2 C 1 I F2 I F8 forward current T C = 2 C T C = 8 C F forward voltage I F = ; GE = = 2 C Q rr I RM t rr E rec R thjc R thch reverse recovery charge max. reverse recovery current reverse recovery time reverse recovery energy thermal resistance junction to case thermal resistance case to heatsink R = 6 /dt = -4 /µs I F = ; GE = (per diode) 1.9 1.9 3 3.7. 33 22 2.2 µc mj 1. K/W K/W 91127a 9 IXYS ll rights reserved 2-6
MIXW1TMH Temperature Seor NTC Symbol Definitio Conditio min. typ. max. Unit R 2 resistance T C = 2 C 4.7. B 2/ 337.2 kw K 1 1 R [Ω] 1 1 1 2 7 1 12 1 T C [ C] Typ. NTC resistance vs. temperature Module Symbol Definitio Conditio min. typ. max. Unit M T stg operating temperature max. virtual junction temperature storage temperature -4-4 12 1 12 C C C ISOL isolation voltage I ISOL < 1 m; /6 Hz 2 ~ CTI comparative tracking index - F C mounting force 4 8 N d S d creep distance on surface strike distance through air Weight 3 g 12.7 12 mm mm T C = 2 C unless otherwise stated 91127a 9 IXYS ll rights reserved 3-6
MIXW1TMH Circuit Diagram P T1 T3 T D1 D3 D NTC1 G1 G3 G U W NTC2 T2 T4 T6 D2 D4 D6 G2 G4 G6 EU E EW Outline Drawing Dimeio in mm (1 mm =.394 ) Part number M = Module I = IGBT X = XPT = standard = Current Rating W = 6-Pack 1 = Reverse oltage T = NTC MH = MiniPack2 Ordering Part Name Marking on Product Delivering Mode Base Qty Ordering Code Standard MIX W 1 TMH MIXW1TMH Box 8388 91127a 9 IXYS ll rights reserved 4-6
MIXW1TMH IGBT T1 - T6 3 2 GE = 1 3 2 GE = 1 17 19 13 11 1 1 = 2 C 1 1 9 1 2 3 Fig. 1 Typ. output characteristics 1 2 3 4 Fig. 2 Typ. output characteristics 3 2 1 = 1 = 6 1 1 = 2 C GE 1 6 7 8 9 1 11 12 13 GE Fig. 3 Typ. tranfer characteristics 1 3 4 6 Q G [nc] Fig. 4 Typ. turn-on gate charge 4 3 R G = 6 Ω = 6 GE = ±1 E on E off 2.8 2.4 = 1 = 6 GE = ±1 E 2 [mj] E 2. [mj] 1 1.6 E off E on 1 1 2 3 3 Fig. Typ. switching energy vs. collector current 1.2 4 6 8 1 1 14 16 R G [Ω] Fig. 6 Typ. switching energy vs. gate resistance 91127a 9 IXYS ll rights reserved - 6
MIXW1TMH Diode T1 - T6 4 3 4 R = 6 4 I F Q rr [µc] 3 1 = 2 C 2 1.. 1. 1. 2. 2. 3. F Fig. 7 Typ. Forward current versus F 1 3 4 6 7 /dt [/µs] Fig. 8 Typ. reverse recov.charge Q rr vs. di/dt 3 7 3 2 R = 6 4 1 6 R = 6 I RR t rr 4 1 1 [] 3 4 1 1 3 4 6 7 /dt [/µs] Fig. 9 Typ. peak reverse current I RM vs. di/dt 3 4 6 7 /dt [/µs] Fig. 1 Typ. recovery time t rr versus di/dt 1.4 1 1.2 R = 6 Diode 1. 4 1 IGBT E rec.8 [mj].6.4 1.2 3 4 6 7 /dt [/µs] Fig. 11 Typ. recovery energy E rec versus di/dt.1 4.28.8.326.8.1.1.1 1 1 t p [s] 91127a 9 IXYS ll rights reserved 6-6 Z thjc [K/W].1 IGBT FRD R i t i R i t i 1.22.1.461.1 2.9.3.291.3 3.41.3.423.3 Fig. 12 Typ. traient thermal impedance