BC847BPDX6, SBC847BPDX6 NPN/PNP Dual General Purpose Transistor This transistor is designed for general purpose amplifier applications. It is housed in the SOT563 which is designed for low power surface mount applications. Features S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AECQ11 Qualified and PPAP Capable These Devices are PbFree and are RoHS Compliant MAXIMUM RATINGS NPN Rating Symbol alue Unit CollectorEmitter oltage CEO 45 CollectorBase oltage CBO 5 EmitterBase oltage EBO 6. Collector Current Continuous MAXIMUM RATINGS PNP I C 1 madc Rating Symbol alue Unit CollectorEmitter oltage CEO 45 CollectorBase oltage CBO 5 EmitterBase oltage EBO 5. Collector Current Continuous I C 1 madc Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. THERMAL CHARACTERISTICS Characteristic (One Junction Heated) Symbol Max Unit Total Device Dissipation (Note 1) Derate above 25 C Thermal Resistance Junction-to-Ambient (Note 1) P D 357 2.9 R JA 35 mw mw/ C C/W Characteristic (Both Junctions Heated) Symbol Max Unit Total Device Dissipation (Note 1) Derate above 25 C Thermal Resistance Junction-to-Ambient (Note 1) P D 5 4. R JA 25 mw mw/ C C/W Q 1 (3) 6 5 4 (2) 1 2 3 SOT563 CASE 463A (1) Q 2 (4) (5) (6) MARKING DIAGRAM ORDERING INFORMATION Device Package Shipping BC847BPDX6T1G BC847BPDX6T1 4F = Specific Device Code M = Month Code = PbFree Package (Note: Microdot may be in either location) SOT563 (PbFree) SBC847BPDX6T1G SOT563 (PbFree) BC847BPDX6T5G 1 4F M SOT563 (PbFree) 4 mm pitch 4/Tape & Reel 2 mm pitch 4/Tape & Reel 2 mm pitch 8/Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD811/D. Junction and Storage Temperature Range T J, T stg 55 to +15 1. FR4 @ Minimum Pad C Semiconductor Components Industries, LLC, 213 May, 213 Rev. 2 1 Publication Order Number: BC847BPDX6T1/D
BC847BPDX6, SBC847BPDX6 ELECTRICAL CHARACTERISTICS (NPN) ( unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS CollectorEmitter Breakdown oltage (BR)CEO (I C = 1 ma) 45 CollectorEmitter Breakdown oltage (I C = 1 μa, EB = ) CollectorBase Breakdown oltage (I C = 1 A) EmitterBase Breakdown oltage (I E = A) (BR)CES 5 (BR)CBO 5 (BR)EBO 6. Collector Cutoff Current ( CB = 3 ) ( CB = 3, T A = 15 C) I CBO 15 5. na μa ON CHARACTERISTICS DC Current Gain (I C = 1 μa, CE = 5. ) (I C = ma, CE = 5. ) h FE 15 29 475 CollectorEmitter Saturation oltage (I C = 1 ma, I B =.5 ma) CollectorEmitter Saturation oltage (I C = 1 ma, I B = 5. ma) CE(sat).25.6 BaseEmitter Saturation oltage (I C = 1 ma, I B =.5 ma) BaseEmitter Saturation oltage (I C = 1 ma, I B = 5. ma) BE(sat).7.9 BaseEmitter oltage (I C = ma, CE = 5. ) BaseEmitter oltage (I C = 1 ma, CE = 5. ) SMALLSIGNAL CHARACTERISTICS CurrentGain Bandwidth Product (I C = 1 ma, CE = 5. dc, f = 1 MHz) BE(on) 58 66 7 77 m f T 1 MHz Output Capacitance ( CB = 1, f = MHz) C obo 4.5 pf Noise Figure (I C =.2 ma, CE = 5. dc, R S = kω, f = khz, BW = Hz) NF 1 db 2
BC847BPDX6, SBC847BPDX6 ELECTRICAL CHARACTERISTICS (PNP) ( unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS CollectorEmitter Breakdown oltage (BR)CEO (I C = 1 ma) 45 CollectorEmitter Breakdown oltage (I C = 1 μa, EB = ) CollectorBase Breakdown oltage (I C = 1 A) EmitterBase Breakdown oltage (I E = A) (BR)CES 5 (BR)CBO 5 (BR)EBO 5. Collector Cutoff Current ( CB = 3 ) Collector Cutoff Current ( CB = 3, T A = 15 C) ON CHARACTERISTICS DC Current Gain (I C = 1 μa, CE = 5. ) (I C = ma, CE = 5. ) CollectorEmitter Saturation oltage (I C = 1 ma, I B =.5 ma) (I C = 1 ma, I B = 5. ma) BaseEmitter Saturation oltage (I C = 1 ma, I B =.5 ma) (I C = 1 ma, I B = 5. ma) BaseEmitter On oltage (I C = ma, CE = 5. ) (I C = 1 ma, CE = 5. ) SMALLSIGNAL CHARACTERISTICS CurrentGain Bandwidth Product (I C = 1 ma, CE = 5. dc, f = 1 MHz) Output Capacitance ( CB = 1, f = MHz) Noise Figure (I C =.2 ma, CE = 5. dc, R S = kω, f = khz, BW = Hz) I CBO h FE CE(sat) BE(sat) BE(on).6 15 29.7.9 15 4. 475.65.75.82 na μa f T 1 MHz C ob 4.5 pf NF 1 db 3
BC847BPDX6, SBC847BPDX6 TYPICAL NPN CHARACTERISTICS hfe, NORMALIZED DC CURRENT GAIN 1.5.8.6.4 CE = 1, OLTAGE (OLTS).9.8.7.6.5.4.2.1 BE(sat) @ I C /I B = 1 BE(on) @ CE = 1 CE(sat) @ I C /I B = 1.2.2.5 5. 1 2 5 1.1.2.5.7 3. 5. 7. 1 2 3 5 7 1 Figure 1. Normalized DC Current Gain Figure 2. Saturation and On oltages CE, COLLECTOR-EMITTER OLTAGE () 1.6 1.2.8.4 I C = 1 ma I C = 2 ma I C = 5 ma.2.1 1 I B, BASE CURRENT (ma) I C = ma I C = 1 ma 2 B, TEMPERATURE COEFFICIENT (m/ C) θ -55 C to +125 C 1.2 1.6 2.4 2.8.2 1 1 I C, COLLECTOR CURRENT (ma) Figure 3. Collector Saturation Region Figure 4. BaseEmitter Temperature Coefficient C, CAPACITANCE (pf) 1 7. 5. C ib 3. C ob.4.6.8 4. 6. 8. 1 2 4 R, REERSE OLTAGE (OLTS) f, T CURRENT-GAIN - BANDWIDTH PRODUCT (MHz) 4 3 1 8 6 4 3 2.5.7 3. 5. 7. 1 2 3 5 CE = 1 Figure 5. Capacitances Figure 6. CurrentGain Bandwidth Product 4
BC847BPDX6, SBC847BPDX6 TYPICAL PNP CHARACTERISTICS hfe, NORMALIZED DC CURRENT GAIN 1.5.7.5.2 -.2 CE = -1, OLTAGE (OLTS) - -.9 -.8 -.7 -.6 -.5 -.4 - -.2 -.1 BE(sat) @ I C /I B = 1 BE(on) @ CE = -1 CE(sat) @ I C /I B = 1 -.5 - - -5. -1-2 -5-1 - -.1 -.2 -.5 - - -5. -1-2 -5-1 Figure 7. Normalized DC Current Gain Figure 8. Saturation and On oltages - CE, COLLECTOR-EMITTER OLTAGE () -1.6-1.2 -.8 -.4 I C = -1 ma I C = -2 ma I C = -5 ma -.2 -.1 - -1 I B, BASE CURRENT (ma) I C = - ma I C = -1 ma -2 B, TEMPERATURE COEFFICIENT (m/ C) θ 1.2 1.6 2.4 2.8-55 C to +125 C -.2 - -1-1 I C, COLLECTOR CURRENT (ma) Figure 9. Collector Saturation Region Figure 1. BaseEmitter Temperature Coefficient C, CAPACITANCE (pf) 1 7. 5. 3. -.4 C ib C ob -.6 - - -4. -6. -1-2 -3-4 R, REERSE OLTAGE (OLTS) f, T CURRENT-GAIN - BANDWIDTH PRODUCT (MHz) 4 3 15 1 8 6 4 3 2 -.5 CE = -1 - - -3. -5. -1-2 -3-5 Figure 11. Capacitances Figure 12. CurrentGain Bandwidth Product 5
BC847BPDX6, SBC847BPDX6 PACKAGE DIMENSIONS SOT563, 6 LEAD CASE 463A ISSUE F D X A L NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETERS 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 6 5 4 1 2 3 e E Y b 65 PL.8 (.3) M X Y H E C MILLIMETERS INCHES DIM MIN NOM MAX MIN NOM MAX A.5.55.6.2.21.23 b.17.22.27.7.9.11 C D.8 1.5.12 1.6.18 1.7.3.59.5.62.7.66 E 1.1 1.2 1.3.43.47.51 e.5 BSC.2 BSC L.1.2.4.8.12 H E 1.5 1.6 1.7.59.62.66 SOLDERING FOOTPRINT*.118.45.177 1.35.531.394.5.5.197.197 SCALE 2:1 mm inches *For additional information on our PbFree strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC s product/patent coverage may be accessed at www.onsemi.com/site/pdf/patentmarking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Typical parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 8217 USA Phone: 336752175 or 8344386 Toll Free USA/Canada Fax: 336752176 or 83443867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 82829855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 79 291 Japan Customer Focus Center Phone: 813581715 6 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative BC847BPDX6T1/D