STTB3006P() TURBOSWTCH B. ULTR-FST HGH OLTGE DODE MN PRODUCTS CHRCTERSTCS F() RRM 30 600 rr (yp) 60ns F (max) 1.3 K PRELMNRY DT FETURES ND BENEFTS SPECFC TO THE FOLLOWNG OPER- TONS: Snubbing or clamping, demagneizaion and recificaion. ULTR-FST,SOFT ND NOSE-FREE RECOERY. ERY LOW OERLL POWER LOSSES ND PRTCULRY LOW FORWRD OLTGE. DESGNED FOR HGH PULSED CURRENT OPERTONS. CECC PPROED. DESCRPTON The TURBOSWTCH is a very high performance series of ulra-fas high volage power diodes from 600 o 1200. TURBOSWTCH, B family, drasically cus losses in all high volage operaions which require exremely fas, sof and noise-free power diodes. They are paricularly suiable in he primary circui SOD93 (Plasic) K STTB3006P solaed DOP3 (Plasic) of an SMPS as snubber, clamping or demagneizing diodes, and also in mos power converers as high performance recifier diodes. Packaged in SOD93 and in isolaed DOP3, hese 600 devices are paricularly inended for use on 240 domesic mains. K STTB3006P BSOLUTE MXMUM RTNGS Symbol Parameer alue Uni RRM Repeiive peak reverse volage 600 RSM Non repeiive peak reverse volage 600 F(RMS) RMS forward curren 50 FRM Repeiive peak forward curren (p = 5 µs, f = 1kHz) 700 T j Max operaing juncion emperaure -65 o 150 C Tsg Sorage emperaure -65 o 150 C TM : TURBOSWTCH is a rademark of SGS-THOMSON MCROELECTRONCS. May 1995 - Ed : 2B 1/6
THERML ND POWER DT Symbol Parameer Condiions alue Uni Rh(j-c) Juncion o case hermal resisance STTB3006P STTB3006P 1.2 1.8 C/W P 1 Conducion power dissipaion (see fig. 5) F() = 30 δ =0.5 STTB3006P Tc= 85 C STTB3006P Tc= 45 C 54 W Pmax Toal power dissipaion Pmax = P1 + P3 (P3 = 10% P1) STTB 3006P Tc= 78 C STTB3006P Tc= 42 C 60 W STTC ELECTRCL CHRCTERSTCS (see Fig.5) Symbol Parameer Tes Condiions Min Typ Max Uni F * Forward volage drop F =30 Tj = 25 C Tj = 125 C 1.4 1.3 R ** Reverse leakage curren R =0.8 xrrm Tj = 25 C Tj = 125 C 150 5.0 µ m Tes pulses widhs : * p = 380 µs, duy cycle < 2% ** p = 5 ms, duy cycle < 2% DYNMC ELECTRCL CHRCTERSTCS TURN-OFF SWTCHNG (see Fig.6) Symbol Parameer Tes Condiions Min Typ Max Uni rr Reverse recovery ime Tj=25 C F = 0.5 R = 1 rr = 0.25 F =1 d F /d =-50/µs R =30 60 110 ns RM Maximum reverse recovery curren Tj=125 C R = 400 F =30 d F /d = -240 /µs d F /d = -500 /µs 40 45 S facor Sofness facor Tj = 125 C R = 400 F =30 d F /d = -500 /µs 0.5 / TURN-ON SWTCHNG (see Fig.7) Symbol Parameer Tes Condiions Min Typ Max Uni fr Forward recovery ime Tj=25 C F =30, d F /d = 240 /µs measured a, 1.1 F max 500 ns Fp Peak forward volage Tj=25 C F =30, d F /d = 240 /µs F =150, df/d = 500 /µs 10 8 2/6
PPLCTON DT The TURBOSWTCH B is especially designed o provide he lowes overall power losses in any applicaion such as snubbing,clamping, demagneizaion and recificaion. n such applicaions (fig.1 o fig.4), he way of calculaing he power losses is given below : TOTL LOSSES due o he diode P = P1+ P2+ P3+ P4 Was CONDUCTON LOSSES P1 Was (Fig. 5) REERSE LOSSES P2 Was (Fig. 5) SWTCHNG LOSSES OFF : P3 Was ON : P4 Was (Fig. 6 & 7) Fig. 1 : SNUBBER DODE. Fig. 2 : CLMPNG DODE. PWM PWM T T F = 1/T = /T F = 1/T = /T Fig. 3 : DEMGNETZNG DODE. Fig. 4 : RECTFER DODE. 3/6
PPLCTON DT (Con d) Fig. 5: STTC CHRCTERSTCS Conducion losses : P1 = 0. F() +R d. F 2 (RMS) R F Rd wih 0 = 1.00 Rd = 0.010 Ohm (Max values a 125 C) R O F Reverse losses : P2 = R. R.(1-δ) Fig. 6: TURN-OFF CHRCTERSTCS RM rr = a + b S = b/a d F /d = R /L RM rr = a + b S = b/a d F /d a a b b FREEWHEELNG OPERTON d R/d d R /d R RECTFER OPERTON R Turn-off losses : P3 = R 2 RM S F 6 x d F d Turn-off losses : (wih non negligible serial inducance) P3 = R 2 RM S F + 6 xd F d L 2 RM F 2 P3 and P3 are suiable for power MOSFET and GBT Fig. 7: TURN-ON CHRCTERSTCS F d F /d Fmax 0 F Turn-on losses : P4 = 0.4 ( FP - F ). Fmax. fr.f Fp 1.1 F F 0 fr 4/6
PCKGE DT SOD93 Plasic DMENSONS G J H REF. Millimeers nches Min. Max. Min. Max. 14.7 15.2 0.578 0.596 B 16.2 0.637 E B F C 31 yp 1.220 yp D 18 yp 0.708 yp E 12.2 0.480 C G 3.95 4.15 0.155 0.163 H 4.7 4.9 0.185 0.193 P 4 4.1 0.157 0.161 J 1.9 2.1 0.062 0.075 N M L L 0.5 0.78 0.019 0.030 M 2.5 yp 0.098 yp N 10.8 11.1 0.425 0.437 P 1.1 1.3 0.043 0.051 Cooling mehod : C. Marking : Type number. Weigh : 5.2 g. Recommended orque value : 0.8m.N. Maximum orque value : 1.0 m.n. PCKGE DT DOP3 SOLTED Plasic R4.6 J H REF. DMENSONS Millimeers nches Min. Max. Min. Max. 15.10 15.50 0.594 0.611 G B 20.70 21.10 0.814 0.831 D B C 14.30 15.60 0.561 0.615 D 16.10 16.50 0.632 0.650 G 3.40-0.133 - H 4.40 4.60 O.173 0.182 4.08 4.17 0.161 0.164 P L C J 1.45 1.55 0.057 0.062 L 0.50 0.70 0.019 0.028 N M M 2.70 2.90 0.106 0.115 N 10.80 11.30 0.42 0.45 P 1.20 1.40 0.047 0.056 Cooling mehod : C. Marking : Type number. Weigh : 4.6 g. Recommended orque value : 0.8 m.n. Maximum orque value : 1.0 m.n. Elecrical isolaion : 2500RMS Capaciance :12 pf 5/6
nformaion furnished is believed o be accurae and reliable. However, SGS-THOMSON Microelecronics assumes no responsabiliy for he consequences of use of such informaion nor for any infringemen of paens or oher righs of hird paries which may resul from is use. No license is graned by implicaion or oherwise under any paen or paen righs of SGS-THOMSON Microelecronics. Specificaions menioned in his publicaion are subjec o change wihou noice. This publicaion supersedes and replaces all informaion previously supplied. SGS-THOMSON Microelecronics producs are noauhorized for use as criical componens in life suppor devices or sysems wihouexpress wrien approval of SGS-THOMSON Microelecronics. 1995 SGS-THOMSON Microelecronics - Prined in aly - ll righs reserved. SGS-THOMSON Microelecronics GROUP OF COMPNES usralia - Brazil - France - Germany - Hong Kong - aly - Japan - Korea - Malaysia - Mala - Morocco - The Neherlands - Singapore - Spain - Sweden - Swizerland - Taiwan - Thailand - Unied Kingdom - U.S.. 6/6