N9 Monolithic N-Channel JFET Dual V GS(off) (V) V (BR)GSS Min (V) g fs Min (ms) I G Max (pa) V GS V GS Max (mv). to. Monolithic Design High Slew Rate Low Offset/Drift Voltage Low Gate Leakage: pa Low Noise: 9 nv Hz High CMRR: db Tight Differential Match vs. Current Improved Op Amp Speed, Settling Time Accuracy Minimum Input Error/Trimming Requirement Insignificant Signal Loss/Error Voltage High System Sensitivity Minimum Error with Large Input Signal Wideband Differential Amps High-Speed, Temp-Compensated, Single-Ended Input Amps High Speed Comparators Impedance Converters The low cost N9 JFET dual is designed for high-performance differential amplification for a wide range of precision test instrumentation applications. This series features tightly matched specs, low gate leakage for accuracy, and wide dynamic range with I G guaranteed at V DG = V. The hermetically-sealed TO-7 package is available with full military processing (see Military Information and the N//7JANTX/JANTXV data sheet). For similar products see N9/97/9/99, the low-noise U/SST series, the high-gain N9/9, and the low-leakage U/ data sheets. TO-7 S G D D G S Top View Gate-Drain, Gate-Source Voltage............................... V Gate Current................................................. ma Lead Temperature ( / from case for sec.).................. C Storage Temperature................................... to C Operating Junction Temperature.......................... to C Document Number: 7 S- Rev. B, -Jun- Power Dissipation : Per Side a........................ mw Total b........................... mw Notes a. Derate mw/c above C b. Derate mw/c above C -
N9 Limits Parameter Symbol Test Conditions Min Typ a Max Unit Static Gate-Source Breakdown Voltage V (BR)GSS I G = A, V DS = V 7 V Gate-Source Cutoff Voltage V GS(off) V DS = V, = na.. Saturation Drain Current b SS V DS = V, V GS = V. ma V GS = V, V DS = V pa Gate Reverse Current I GSS T A = C na V DG = V, = A pa Gate Operating Current I G T A =C. na V DG = V, = A.. Gate-Source Voltage V GS = A. V Gate-Source Forward Voltage V GS(F) I G = ma, V DS = V Dynamic Common-Source Forward Transconductance g fs VDS = V, V GS = V Common-Source Output Conductance g os f = khz. ms S Common-Source Input Capacitance C iss V DS = V, V GS = V Common-Source C Reverse Transfer Capacitance rss f = MHz. pf Drain-Gate Capacitance C dg V DG = V, I S =, f = MHz. Equivalent Input Noise Voltage e n V DS = V, V GS = V, f = khz 9 Noise Figure Matching NF V DS = V, V GS = V f = Hz, R G = M nv Hz. db Differential Gate-Source Voltage V GS V GS V DG = V, = A mv Gate-Source Voltage Differential Change with Temperature V GS V GS T V DG = V, = A T A = to C V/C Saturation Drain Current Ratio SS SS V DS = V, V GS = V..97 Transconductance Ratio g fs g fs Differential Output Conductance g os g os V DS = V, = A f = khz..97. S Differential Gate Current I G I G V DG = V, = A T A = C. na Common Mode Rejection Ratio c CMRR V DG = to V, = A db Notes a. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. NQP b. Pulse test: PW s duty cycle %. c. This parameter not registered with JEDEC. - Document Number: 7 S- Rev. B, -Jun-
N9 Drain Current and Transconductance vs. Gate-Source Cutoff Voltage na Gate Leakage Current SS Saturation Drain Current (ma) g fs SS SS @ V DS = V, V GS = V g fs @ V DG = V, V GS = V f = khz.... g fs Forward Transconductance (ms) I G Gate Leakage na na pa pa pa I G @ = A T A = C I GSS @ C A A A I GSS @ C T A = C V GS(off) Gate-Source Cutoff Voltage (V). pa V DG Drain-Gate Voltage (V) V GS(off) = V V GS(off) = V V GS = V. V V GS = V. V. V. V. V.9 V. V. V. V. V. V. V. V. V. V. V GS(off) = V V GS(off) = V V GS = V. V. V GS = V. V.. V... V. V. V. V...9 V. V. V. V.. V.. V. V. V. V........ Document Number: 7 S- Rev. B, -Jun- -
N9 V GS(off) = V Transfer Characteristics V DS = V V DG = V T A = C Gate-Source Differential Voltage t T A = C C (mv) V GS V GS C....... Voltage Differential with Temperature Common Mode Rejection Ratio V DG = V V GS V GS ( V/ C ) T A = to C T A = to C CMRR (db) CMRR = log V DG = V V V DG V GS V GS 9.... Circuit Voltage Gain k On-Resistance A V Voltage Gain. V GS(off) = V A V g fs R L R L g os Assume V DD = V, V DS = V R L V V. r DS(on) Drain-Source On-Resistance ( Ω ) V GS(off) = V V.. - Document Number: 7 S- Rev. B, -Jun-
N9 Ciss Input Capacitance (pf) Common-Source Input Capacitance vs. Gate-Source Voltage f = MHz V DS = V V V V Crss Reverse Feedback Capacitance (pf) Common-Source Reverse Feedback Capacitance vs. Gate-Source Voltage f = MHz V DS = V V V V en Noise Voltage nv / Hz Equivalent Input Noise Voltage vs. Frequency V DS = V @ ma V GS = V g os Output Conductance (µs)..... Output Conductance V GS(off) = V C T A = C C V DS = V f = khz k k k f Frequency (Hz)... Common-Source Forward Transconductance k On-Resistance and Output Conductance vs. Gate-Source Cutoff Voltage g fs Forward Transconductance (ms).... V GS(off) = V C T A = C C V DS = V f = khz.. r DS(on) Drain-Source On-Resistance ( Ω ) g os r DS r DS @ = A, V GS = V g os @ V DS = V, V GS = V, f = khz gos Output Conductance ( S) V GS(off) Gate-Source Cutoff Voltage (V) Document Number: 7 S- Rev. B, -Jun- -