N-Channel 2 V (-) MOFET PROUCT UMMARY V (V) R (on) (Ω) I (A) a, e Q g (TYP.) 2 mm. at V G =.5 V.5.5 at V G = 2.5 V.2.56 at V G =.8 V.7 at V G =.5 V.5 xxxx xxx MICRO FOOT x Backside View Bump ide View Marking Code: xxxx = 872 xxx = ate / lot traceability code Ordering Information: -T2-E (lead (Pb)-free and halogen-free) mm 3 2 G 6.8 nc FEATURE TrenchFET power MOFET Ultra small mm x mm maximum outline Ultra-thin.58 mm maximum height Material categorization: for definitions of compliance please see www.vishay.com/doc?9992 APPLICATION Baseband switch C/C conversion - Boost converters mart phones, portable media players G N-Channel MOFET ABOLUTE MAXIMUM RATING (, unless otherwise noted) PARAMETER YMBOL LIMIT UNIT rain-ource Voltage V 2 V Gate-ource Voltage V G ± 8.5 a T A = 7 C 3.6 a Continuous rain Current (T J = 5 C) I 3.3 b T A = 7 C 2.6 b A Pulsed rain Current (t = 3 μs) I M 2 T C = 25 C.5 a Continuous ource-rain iode Current I.65 b.8 a T A = 7 C. a Maximum Power issipation P W.78 b T A = 7 C.5 b Operating Junction and torage Temperature Range T J, T stg -55 to +5 C Package Reflow Conditions c VPR 26 IR/Convection 26 Notes a. urface mounted on " x " FR board with full copper, t = s. b. urface mounted on " x " FR board with minimum copper, t = s. c. Refer to IPC/JEEC (J-T-2), no manual or hand soldering. d. In this document, any reference to case represents the body of the MICRO FOOT device and foot is the bump. e. Based on. THERMAL REITANCE RATING PARAMETER YMBOL TYPICAL MAXIMUM UNIT Maximum Junction-to-Ambient a, b t = s 55 7 R thja Maximum Junction-to-Ambient c, d t = s 25 6 Notes a. urface mounted on " x " FR board with full copper. b. Maximum under steady state conditions is C/W. c. urface mounted on " x " FR board with minimum copper. d. Maximum under steady state conditions is 9 C/W. 5-5-Rev. B, 29-Jun-5 ocument Number: 633 ARE UBJECT TO PECIFIC ICLAIMER, ET FORTH AT www.vishay.com/doc?9 C/W
PECIFICATION (T J = 25 C, unless otherwise noted) PARAMETER YMBOL TET CONITION MIN. TYP. MAX. UNIT tatic rain-ource Breakdown Voltage V V G = V, I = 25 μa 2 - - V V Temperature Coefficient ΔV /T J - 6 - I = 25 μa V G(th) Temperature Coefficient ΔV G(th) /T J - -2.6 - mv/ C Gate-ource Threshold Voltage V G(th) V = V G, I = 25 μa. -.9 V Gate-ource Leakage I G V = V, V G = ± 8 V - - ± na V = 2 V, V G = V - - Zero Gate Voltage rain Current I V = 2 V, V G = V, T J = 7 C - - μa On-tate rain Current a I (on) V -5 V, V G =.5 V - - A Notes a. Pulse test; pulse width 3 μs, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. V G =.5 V, I =.5 A -.36. rain-ource On-tate Resistance a R (on) V G = 2.5 V, I = A -..5 V G =.8 V, I = A -.6.56 Ω V G =.5 V, I =.5 A -.5.7 Forward Transconductance a g fs V = V, I =.5 A - 6 - ynamic b Input Capacitance C iss - 63 - Output Capacitance C oss V = V, V G = V, f = MHz - 5 - pf Reverse Transfer Capacitance C rss - 2 - V = V, V G = 8 V, I =.5 A - 2 8 Total Gate Charge Q g - 6.8 nc Gate-ource Charge Q gs V = V, V G =.5 V, I =.5 A -.8 - Gate-rain Charge Q gd -. - Gate Resistance R g V G =. V, f = MHz - 5.3 - Ω Turn-On elay Time t d(on) - 7 5 Rise Time t r V = - V, R L = 6.7 Ω - 5 3 Turn-Off elay Time t d(off) I.5 A, V GEN = -.5 V, R g = Ω - 3 6 Fall Time t f - 2 Turn-On elay Time t d(on) - 5 ns Rise Time t r V = - V, R L = 6.7 Ω - 5 3 Turn-Off elay Time t d(off) I -.5 A, V GEN = -8 V, R g = Ω - 3 6 Fall Time t f - 2 rain-ource Body iode Characteristics Continuous ource-rain iode I Current - -.5 A Pulse iode Forward Current I M - - 2 Body iode Voltage V I =.5 A, V G = -.7.2 V Body iode Reverse Recovery Time t rr - 5 3 ns Body iode Reverse Recovery Charge Q rr - 6 5 nc I F =.5 A, di/dt = A/μs, T J = 25 C Reverse Recovery Fall Time t a - 7 - ns Reverse Recovery Rise Time t b - 8 - tresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. 5-5-Rev. B, 29-Jun-5 2 ocument Number: 633 ARE UBJECT TO PECIFIC ICLAIMER, ET FORTH AT www.vishay.com/doc?9
TYPICAL CHARACTERITIC (25 C, unless otherwise noted) 2 V G = 5 V thru 2 V 6 8 I - rain Current (A) 2 8 V G =.5 V I - rain Current (A) 6 2 T C = 25 C T C = 25 C V G = V..5..5 2. V - rain-to-ource Voltage (V) T C = - 55 C..3.6.9.2.5 V G - Gate-to-ource Voltage (V) Output Characteristics Transfer Characteristics. 8 R (on) -On-Resistance (Ω).8.6. V G =.5 V V G =.8 V V G = 2.5 V C - Capacitance (pf) 6 2 C iss V G =.5 V C rss C oss.2 8 2 6 2 I - rain Current (A) 8 2 6 2 V -rain-to-ource Voltage (V) On-Resistance vs. rain Current and Gate Voltage Capacitance V G - Gate-to-ource Voltage (V) 8 7 6 5 3 2 I =.5 A V = 5 V V = V V = 6 V R (on) -On-Resistance (Normalized).5..3.2...9.8 V G =.5 V, 2.5 V,.8 V; I =.5 A V G =.5 V; I =.5 A 2 6 8 2 Q g - Total Gate Charge (nc).7-5 - 25 25 5 75 25 5 T J - Junction Temperature ( C) Gate Charge On-Resistance vs. Junction Temperature 5-5-Rev. B, 29-Jun-5 3 ocument Number: 633 ARE UBJECT TO PECIFIC ICLAIMER, ET FORTH AT www.vishay.com/doc?9
TYPICAL CHARACTERITIC (25 C, unless otherwise noted). I =.5 A.8 I - ource Current (A) T J = 5 C T J = 25 C R (on) -On-Resistance (Ω).6..2 T J = 25 C T J = 25 C...2..6.8..2 V - ource-to-rain Voltage (V). 2 3 5 V G - Gate-to-ource Voltage (V) ource-rain iode Forward Voltage On-Resistance vs. Gate-to-ource Voltage.8 25.7 2 V G(th) (V).6.5. I = 25 μa Power (W) 5.3 5.2-5 - 25 25 5 75 25 5 T J - Temperature ( C) Threshold Voltage... Time (s) ingle Pulse Power, Junction-to-Ambient Limited by R (on) * I - rain Current (A). μs ms ms ms s, s C BV Limited.. V -rain-to-ource Voltage (V) * V G > minimum V G at which R (on) is specified afe Operating Area, Junction-to-Ambient 5-5-Rev. B, 29-Jun-5 ocument Number: 633 ARE UBJECT TO PECIFIC ICLAIMER, ET FORTH AT www.vishay.com/doc?9
TYPICAL CHARACTERITIC (25 C, unless otherwise noted) 5.5.2 I - rain Current (A) 3 2 Power issipation (W).9.6.3 25 5 75 25 5 T A -Case Temperature ( C). 25 5 75 25 5 T A - Ambient Temperature ( C) Current erating a Note When mounted on " x " FR with full copper. Power erating Note a. The power dissipation P is based on T J (max.) = 5 C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. 5-5-Rev. B, 29-Jun-5 5 ocument Number: 633 ARE UBJECT TO PECIFIC ICLAIMER, ET FORTH AT www.vishay.com/doc?9
TYPICAL CHARACTERITIC (25 C, unless otherwise noted) uty Cycle =.5 Normalized Effective Transient Thermal Impedance..2..5.2 ingle Pulse 3. T JM -T A =P M Z (t) thja. urface Mounted. - -3-2 - quare Wave Pulse uration (s) Notes: P M t t 2 t. uty Cycle, = t 2 2. Per Unit Base = R thja = C/W Normalized Thermal Transient Impedance, Junction-to-Ambient (" x " FR Board with Full Copper) uty Cycle =.5 Normalized Effective Transient Thermal Impedance.2. Notes:..5 P M t.2 t 2 t. uty Cycle, = t 2 2. Per Unit Base = R thja = 9 C/W ingle Pulse 3. T JM -T A =P M Z (t) thja.. urface Mounted - -3-2 - quare Wave Pulse uration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient (" x " FR Board with Minimum Copper) maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for ilicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?633. 5-5-Rev. B, 29-Jun-5 6 ocument Number: 633 ARE UBJECT TO PECIFIC ICLAIMER, ET FORTH AT www.vishay.com/doc?9
Package Information MICRO FOOT : -Bumps ( mm x mm,.5 mm Pitch,.286 mm Bump Height) Mark on backside of die x Ø b XXXX XXX G e s e x.3 to.3 (Note 3) older mask-. s e e Recommended land pattern b Note 5 b A A2 A K Bump (Note ) Notes. Bumps are 95.5/3.8/.7 n/ag/cu. 2. Backside surface is coated with a Ti/Ni/Ag layer. 3. Non-solder mask defined copper landing pad.. Laser mark on the backside surface of die. 5. b is the diameter of the solderable substrate surface, defined by an opening in the solder resist layer solder mask defined. 6. is the location of pin IM. MILLIMETER INCHE MIN. NOM. MAX. MIN. NOM. MAX. A.58.5.55.8.98.27 A.2.25.286.8.98.3 A2.2.25.26.96.. b.297.33.363.7.3.3 b.25.98 e.5.97 s.2.23.25.83.9.96.92.96..362.378.39 K.29.65.2..26. Note Use millimeters as the primary measurement. ECN: T5-76-Rev. A, 27-Apr-5 WG: 639 Revision: 27-Apr-5 ocument Number: 6937 ARE UBJECT TO PECIFIC ICLAIMER, ET FORTH AT www.vishay.com/doc?9
Legal isclaimer Notice Vishay isclaimer ALL PROUCT, PROUCT PECIFICATION AN ATA ARE UBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR EIGN OR OTHERWIE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, Vishay ), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. tatements regarding the suitability of products for certain types of applications are based on Vishay s knowledge of typical requirements that are often placed on Vishay products in generic applications. uch statements are not binding statements about the suitability of products for a particular application. It is the customer s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer s technical experts. Product specifications do not expand or otherwise modify Vishay s terms and conditions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. 27 VIHAY INTERTECHNOLOGY, INC. ALL RIGHT REERVE Revision: 8-Feb-7 ocument Number: 9