STARPOWER SEMICONDUCTOR TM IGBT GDCUT17A3S GDCLT17A3S Molding Type Module 17V/A Chopper in one-package General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as high power converters. Features Low V CE(sat) Trench IGBT technology 1μs short circuit capability V CE(sat) with positive temperature coefficient Low inductance case Fast & soft reverse recovery anti-parallel FWD AlSiC baseplate for high power cycling capability AlN substrate for low thermal resistance Equivalent Circuit Schematic Typical Applications High Power Converters Motor Drivers Wind Turbines 211 STARPOWER Semiconductor Ltd. 9/29/211 1/9 Preliminary
Absolute Maximum Ratings T C =25 unless otherwise noted Symbol Description GDCUT17A3S GDCLT17A3S Units V CES Collector-Emitter Voltage 17 V V GES Gate-Emitter Voltage ±2 V I C Collector Current @ T C =25 @ T C =8 A I CM Pulsed Collector Current t p =1ms 1 A I F Diode Continuous Forward Current @ T C =8 A I FM Diode Maximum Forward Current t p =1ms 1 A P D Maximum Power Dissipation @ T j =175 5.3 kw T jmax Maximum Junction Temperature 175 T STG Storage Temperature Range -4 to +125 V ISO Isolation Voltage RMS,f=5Hz,t=1min V Signal Terminal Screw:M4 1.8 to 2.1 Mounting Power Terminal Screw:M8 8. to 1 Torque Mounting Screw:M6 4.25 to 5.75 N.m Electrical Characteristics of IGBT T C =25 unless otherwise noted Off Characteristics Symbol Parameter Test Conditions Min. Typ. Max. Units Collector-Emitter Breakdown Voltage T j =25 17 V Collector Cut-Off V CE =V CES,V GE =V, Current T j =25 5. ma Gate-Emitter Leakage V GE =V GES,V CE =V, Current T j =25 na V (BR)CES I CES I GES On Characteristics Symbol Parameter Test Conditions Min. Typ. Max. Units Gate-Emitter Threshold I C =32mA,V CE =V GE, 5.2 5.8 6.4 V Vol tage T j =25 I C =A,V GE =15V, 2. 2.45 Collector to Emitter T j =25 V Saturation Voltage I C =A,V GE =15V, 2.4 V GE(th) V CE(sat) 211 STARPOWER Semiconductor Ltd. 9/29/211 2/9 Preliminary
Switching Characteristics Symbol Parameter Test Conditions Min. Typ. Max. Units t d(on) Turn-On Delay Time 66 ns t r Rise Time 165 ns t d(off) Turn-Off Delay Time 129 ns V CC =9V,I C =A, t f Fall Time R Gon =1.8Ω,R Goff =2.2Ω, 185 ns Turn-On Switching E on V GE =±15V,T j =25 166 mj Loss E off Turn-Off Switching Loss 199 mj t d(on) Turn-On Delay Time 75 ns t r Rise Time ns t d(off) Turn-Off Delay Time 161 ns V CC =9V,I C =A, t f Fall Time R Gon =1.8Ω,R Goff =2.2Ω, 295 ns Turn-On Switching E on V GE =±15V, 241 mj Loss E off Turn-Off Switching Loss 294 mj C ies Input Capacitance 7.5 nf C oes Output Capacitance V CE =25V,f=1MHz, 2.93 nf C res Reverse Transfer Capacitance V GE =V 2.34 nf I SC SC Data t P 1μs,V GE =15 V,,V CC =9V, 3 A V CEM V R Gint Internal Gate Resistance 2.2 Ω L CE Stray Inductance 2 nh R CC +EE Module Lead Resistance, Terminal To Chip.37 mω Electrical Characteristics of DIODE T C =25 unless otherwise noted Symbol Parameter Test Conditions Min. Typ. Max. Units V F Diode Forward T j =25 1.8 2.2 Vol tage I F =A 1.9 V Q r Charge I F =A, j 344 Recovered T =25 26 μc I RM Recovery Current R R G =1.8Ω, j 845 Peak Reverse V =9V, T =25 785 A E rec Reverse Recovery V GE =-15V T j =25 131 Energy 224 mj 211 STARPOWER Semiconductor Ltd. 9/29/211 3/9 Preliminary
Thermal Characteristics Symbol Parameter Typ. Max. Units R θjc Junction-to-Case (per IGBT) 29.8 K/kW R θjc Junction-to-Case (per DIODE) 5.9 K/kW R θcs Case-to-Sink (Conductive grease applied) 6 K/kW Weight Weight of Module 15 g 211 STARPOWER Semiconductor Ltd. 9/29/211 4/9 Preliminary
1 1 V GE =15V V CE =2V 1 25 1 25 I C [A] 125 I C [A] 125.5 1 1.5 2 2.5 3 3.5 4 5 6 7 8 9 1 11 12 13 V CE [V] V GE [V] Fig 1. IGBT Output Characteristics Fig 2. IGBT Transfer Characteristics E [mj] 7 5 3 V CC =9V R Gon =1.8Ω R Goff =2.2Ω V GE =±15V E OFF E [mj] 1 V CC =9V I C =A V GE =±15V E ON 1 E ON E OFF 1 2 4 6 8 1 12 14 16 18 2 22 I C [A] R G [Ω] Fig 3. IGBT Switching Loss vs. I C Fig 4. IGBT Switching Loss vs. R G 211 STARPOWER Semiconductor Ltd. 9/29/211 5/9 Preliminary
1 Module 1 15 IGBT I C [A] 9 Z thjc [K/kW] 1 3 R Goff =2.2Ω V GE =±15V 3 9 15 1 V CE [V] 1 i: 1 2 3 4 r i [K/W]: 4.5816 17.2431 2.363 5.939 τ i [s]:.83.228.8.591.1.1.1 1 1 t [s] 1 Fig 5. RBSOA 25 Fig 6. IGBT Transient Thermal Impedance 28 26 24 I F [A] 1 125 E [mj] 22 18 E REC 16 14 12 V CC =9V R G =1.8Ω V GE =-15V 1.5 1 1.5 2 2.5 3 1 V F [V] I F [A] Fig 7. Diode Forward Characteristics Fig 8. Diode Switching Loss vs. I F 211 STARPOWER Semiconductor Ltd. 9/29/211 6/9 Preliminary
24 1 22 V CC =9V I F =A V GE =-15V Diode E [mj] 18 16 E REC Z thjc [K/kW] 1 14 12 1 2 4 6 8 1 12 14 16 18 R G [Ω] 1 i: 1 2 3 4 r i [K/W]: 7.8256 29.4521 3.4781 1.1442 τ i [s]:.83.228.8.591.1.1.1 1 1 t [s] Fig 9. Diode Switching Loss vs. R G Fig 1. Diode Transient Thermal Impedance 211 STARPOWER Semiconductor Ltd. 9/29/211 7/9 Preliminary
Package Dimensions Dimensions in Millimeters 211 STARPOWER Semiconductor Ltd. 9/29/211 8/9 Preliminary
Terms and Conditions of Usage The data contained in this product datasheet is exclusively intended for technically trained staff. you and your technical departments will have to evaluate the suitability of the product for the intended application and the completeness of the product data with respect to such application. This product data sheet is describing the characteristics of this product for which a warranty is granted. Any such warranty is granted exclusively pursuant the terms and conditions of the supply agreement. There will be no guarantee of any kind for the product and its characteristics. Should you require product information in excess of the data given in this product data sheet or which concerns the specific application of our product, please contact the sales office, which is responsible for you (see www.powersemi.cc), For those that are specifically interested we may provide application notes. Due to technical requirements our product may contain dangerous substances. For information on the types in question please contact the sales office, which is responsible for you. Should you intend to use the Product in aviation applications, in health or live endangering or life support applications, please notify. If and to the extent necessary, please forward equivalent notices to your customers. Changes of this product data sheet are reserved. 211 STARPOWER Semiconductor Ltd. 9/29/211 9/9 Preliminary