TEMPFET Features N channel Enhancement mode Temperature sensor with thyristor characteristic The drain pin is electrically shorted to the tab 1 2 3 Pin 1 2 3 G D S Type V DS I D R DS(on) Package Ordering Code 100 V 10 A 0.2 Ω TO-220AB C67078-A5008-A2 Maximum Ratings Parameter Symbol Values Unit Drain-source voltage V DS 100 V Drain-gate voltage, R GS = 20 kω V DGR 100 Gate-source voltage V GS ± 20 Continuous drain current, T C = 25 C I D 10 A ISO drain current T C = 85 C, V GS = 10 V, V DS = 0.5 V I D-ISO 1.75 Pulsed drain current, T C = 25 C I D puls 40 Short circuit current, T j = 55... + 150 C I SC 37 Short circuit dissipation, T j = 55... + 150 C P SCmax 500 W Power dissipation P tot 40 Operating and storage temperature range T j, T stg 55... + 150 C DIN humidity category, DIN 40 040 E IEC climatic category, DIN IEC 68-1 55/150/56 Thermal resistance Chip-case Chip-ambient R th JC 3.1 R th JA 75 K/W Semiconductor Group 1 04.97
Electrical Characteristics at T j = 25 C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. Static Characteristics Drain-source breakdown voltage V GS = 0, I D = 1 ma Gate threshold voltage V GS = V DS, I D = 1 ma Zero gate voltage drain current V GS = 0 V, V DS = 100 V T j = 25 C T j = 125 C Gate-source leakage current V GS = 20 V, V DS = 0 T j = 25 C T j = 150 C Drain-source on-state resistance V GS = 10 V, I D = 5 A V (BR)DSS 100 V GS(th) 2.5 3.0 3.5 I DSS I GSS 1 100 10 2.0 10 300 100 4.0 R DS(on) 0.17 0.2 V µa na µa Ω Dynamic Characteristics Forward transconductance V DS 2 I D R DS(on)max, I D = 5 A Input capacitance V GS = 0, V DS = 25 V, f = 1 MHz Output capacitance V GS = 0, V DS = 25 V, f = 1 MHz Reverse transfer capacitance V GS = 0, V DS = 25 V, f = 1 MHz Turn-on time t on, (t on = t d(on) + t r ) V CC = 30 V, V GS = 10 V, I D = 2.9 A, R GS = 50 Ω Turn-off time t off, (t off = t d(off) + t f ) V CC = 30 V, V GS = 10 V, I D = 2.9 A, R GS = 50 Ω g C S fs 2.7 3.8 8.0 pf iss 450 600 C oss 150 240 C rss 80 130 t d(on) 20 30 ns t r 45 70 t d(off) 70 90 t f 55 70 Semiconductor Group 2
Electrical Characteristics (cont d) at T j = 25 C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. Reverse Diode Continuous source current I S 10 A Pulsed source current I SM 40 Diode forward on-voltage V SD V I F = 20 A, V GS = 0 1.3 1.6 Reverse recovery time t rr ns I F = I S, di F /dt = 100 A/µs, V R = 30 V 170 Reverse recovery charge Q rr µc I F = I S, di F /dt = 100 A/µs, V R = 30 V 0.30 Temperature Sensor Forward voltage I TS(on) = 10 ma, T j = 55... + 150 C Sensor override, t p 100 µs, f 1 khz T j = 55... + 160 C Forward current T j = 55... + 150 C Sensor override, t p 100 µs T j = 55... + 160 C Holding current, V TS(off) = 5 V, T j = 25 C T j = 150 C Switching temperature V TS = 5 V Turn-off time V TS = 5 V, I TS(on) = 2 ma V TS(on) I TS(on) 1.4 1.5 10 10 600 I H 0.05 0.05 0.1 0.2 0.5 0.3 T TS(on) 150 t off 0.5 2.5 V ma C µs Semiconductor Group 3
Examples for short-circuit protection at T j = 55... + 150 C, unless otherwise specified. Parameter Symbol Examples Unit 1 2 Drain-source voltage V DS 15 30 V Gate-source voltage V GS 7.3 5.5 Short-circuit current I SC 33.3 16.6 A Short-circuit dissipation P SC 500 500 W Response time t SC(off) ms T j = 25 C, before short circuit 30 30 Short-circuit protection I SC = f (V DS ) Parameter: V GS Diagram to determinei SC fort j =55...+150 C Max. gate voltage V GS(SC) = f (V DS ) Parameter: T j = 55... + 150 C Semiconductor Group 4
Max. power dissipation P tot = f (T C ) Typ. drain-source on-state resistance R DS(on) = f (I D ) Parameter: V GS Typical output characteristics I D = f (V DS ) Parameter: t p =80µs Safe operating area I D = f (V DS ) Parameter: D = 0.01, T C =25 C Semiconductor Group 5
Drain-source on-state resistance R DS(on) = f (T j ) Parameter: I D = 5 A, V GS = 10 V Gate threshold voltage V GS(th) = f (T j ) Parameter: V DS = V GS, I D = 1 ma (spread) Typ. transfer characteristic I D = f (V GS ) Parameter: t p = 80 µs, V DS = 25 V Typ. transconductance g fs = f (I D ) Parameter: t p = 80 µs, V DS = 25 V Semiconductor Group 6
Continuous drain current I D = f (T C ) Parameter: V GS 10 V Forward characteristics of reverse diode I F = f (V SD ) Parameter: T j,t p = 80 µs (spread) Typ. gate-source leakage current I GSS = f (T C ) Parameter: V GS = 20 V, V DS = 0 Typ. capacitances C = f (V DS ) Parameter: V GS = 0, f = 1 MHz Semiconductor Group 7
Transient thermal impedance Z thjc = f (t p ) Parameter: D = t p /T Semiconductor Group 8
Package Outlines TO 220 AB Standard Ordering Code C67078-A5008-A2 TO 220 AB SMD version E3045 Ordering Code C67078-A5008-A4 9.9 9.5 3.7 4.4 1.3 12.8 17.5 4.6 2.8 1) 9.2 15.6 2) 1 13.5 3) 0.75 2.54 1.05 2.54 0.5 2.4 GPT05155 1) punch direction, burr max. 0.04 2) dip tinning 3) max. 14.5 by dip tinning press burr max. 0.05 Semiconductor Group 9