IGBT Module March 2 ersion RoHS Compliant PRODUCT FETURES IGBT chip in trench FS-technology Low switching losses CE(sat) with positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery PPLICTIONS C motor control Motion/servo control Inverter and power supplies GS Series Module BSOLUTE MXIMUM RTINGS Symbol Parameter/Test Conditio alues CES Collector Emitter oltage T J = GES Gate Emitter oltage ±2 I C DC Collector Current T C = T C =8 I CM Repetitive Peak Collector Current tp=ms P tot Power Dissipation Per IGBT 2 W BSOLUTE MXIMUM RTINGS Symbol Parameter/Test Conditio alues RRM Repetitive Reverse oltage T J = I F() verage Forward Current T C = 6 I FRM Repetitive Peak Forward Current tp=ms 2 I 2 t T J =, t=ms, R = 88 2 S MacMic Science & Technology Co., Ltd. dd:#8, Hua Shan Zhong Lu, New District, Changzhou City, Jiangsu Province, P. R.of China Tel.:+86-9-8678 Fax:+86-9-86229 Post Code:222 Website:www.macmicst.com
ELECTRICL CHRCTERISTICS Symbol Parameter/Test Conditio Min. Typ. Max. GE(th) Gate Emitter Threshold oltage CE = GE, I C =m..8 6. CE(sat) I CES Collector Emitter Saturation oltage Collector Leakage Current I C =, GE =, T J = 2.2 2. I C =, GE =, T J = 2. CE =, GE =, T J = CE =, GE =, T J = I GES Gate Leakage Current CE =, GE =±, T J = - R gint Integrated Gate Resistor Q g Gate Charge CE =6, I C =, GE =. C ies Input Capacitance.2 CE =2, GE =, f =MHz C res Reverse Trafer Capacitance 8 t d(on) t r t d(off) t f E on E off I SC Turn on Delay Time Rise Time Turn off Delay Time Fall Time Turn on Energy Turn off Energy Short Circuit Current CC =6,I C = R G =Ω, GE =±, CC =6,I C = R G =Ω, GE =±, CC =6,I C = R G =Ω, GE =±, tpsc µs, GE = T J =, CC =6 T J = 7 T J = 8 T J = T J = T J = T J = 9 T J = T J = T J = 6 T J =.2 T J =. T J =. µ m n Ω µc nf pf R thjc Junction to Case Thermal Resistance ( Per IGBT).2 K /W ELECTRICL CHRCTERISTICS Symbol Parameter/Test Conditio Min. Typ. Max. F Forward oltage I F =6, GE =, T J = 2.6.2 I F =6, GE =, T J = 2. t rr Reverse Recovery Time I F =6, R =6 8 I RRM Max. Reverse Recovery Current di F /dt=-6/μs 22 Q RR Reverse Recovery Charge T J =. E rec Reverse Recovery Energy. R thjcd Junction to Case Thermal Resistance ( Per Diode).6 µc K /W 2
I C () E on E off () I C () I C () MODULE CHRCTERISTICS Symbol Parameter/Test Conditio alues T Jmax Max. Junction Temperature T Jop Operating Temperature -~2 T stg Storage Temperature -~2 isol Isolation Breakdown oltage C, Hz(R.M.S), t=minute CTI Comparative Tracking Index > Torque to heatsink Recommended(M6) ~ to terminal Recommended(M) 2.~ Weight 6 Nm Nm g ge=7 ge= ge= ge= ge=8 T J = 2 CE () 2 CE () Figure. Typical Output Characteristics Figure 2. Typical Output Characteristics CE =2 2 6 2 8 CE =6 I C = GE =± T J = Eon 7 8 9 2 Eoff 2 GE () Rg(Ω) Figure. Typical Trafer characteristics Figure. Switching Energy vs Gate Resistor
I F () E REC () I C () I F () E on E off () I C () 2 6 2 8 CE =6 R g =Ω GE =± T J = Eon Eoff 2 R g =Ω GE =± T J = 6 9 2 6 8 I C () CE () Figure. Switching Energy vs Collector Current Figure 6. Reverse Biased Safe Operating rea 7 2 7 6 DC 7 DC 2 2 2 7 2 T C ( ) Figure 7. Collector Current vs Case temperature IGBT -inverter 2 7 2 T C ( ) Figure 8. Forward current vs Case temperature 6 CE =6 I F =6 T J = 2 8 2 2 F () Rg(Ω) Figure 9. Diode Forward Characteristics Figure. Switching Energy vs Gate Resistor
E REC () Z thjc (K/W) 6 CE =6 R g =Ω T J =. 2. IGBT DIODE 2 6 8 2 I F ().... Rectangular Pulse Duration (s) Figure. Switching Energy vs Forward Current Figure 2. Traient Thermal Impedance of Diode and Figure. Circuit Diagram Dimeio in (mm) Figure. Package Outline