STARPOWER SEMICONDUCTOR IGBT 1V/A 2 in one-package General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as general inverter and UPS. Features Low V CE(sat) Trench IGBT technology 1μs short circuit capability V CE(sat) with positive temperature coefficient Maximum junction temperature 175 o C Low inductance case Fast & soft reverse recovery anti-parallel FWD Isolated copper baseplate using DBC technology Typical Applications Inverter for motor drive AC and DC servo drive amplifier Uninterruptible power supply Equivalent Circuit Schematic 216 STARPOWER Semiconductor Ltd. 6/6/216 1/9 SFA
Absolute Maximum Ratings T C =25 o C unless otherwise noted IGBT Symbol Description Value Unit V CES Collector-Emitter Voltage 1 V V GES Gate-Emitter Voltage ±2 V I C Collector Current @ T C =25 o C 19 @ T C =1 o C A I CM Pulsed Collector Current t p =1ms 1 A P D Maximum Power Dissipation @ T j =175 o C 3947 W Diode Symbol Description Value Unit V RRM Repetitive Peak Reverse Voltage 1 V I F Diode Continuous Forward Current A I FM Diode Maximum Forward Current t p =1ms 1 A Module Symbol Description Value Unit T jmax Maximum Junction Temperature 175 o C T jop Operating Junction Temperature -4 to +15 o C T STG Storage Temperature Range -4 to +125 o C V ISO Isolation Voltage RMS,f=5Hz,t=1min 25 V 216 STARPOWER Semiconductor Ltd. 6/6/216 2/9 SFA
IGBT Characteristics T C =25 o C unless otherwise noted Symbol Parameter Test Conditions Min. Typ. Max. Unit I C =A,V GE =15V, T j =25 o C 1.7 2.5 V CE(sat) Collector to Emitter Saturation Voltage I C =A,V GE =15V, T j =125 o C 1.95 V I C =A,V GE =15V, T j =15 o C 2. V GE(th) Gate-Emitter Threshold Voltage I C =15.mA,V CE =V GE, T j =25 o C 5.2 6. 6.8 V I CES Collector Cut-Off Current V CE =V CES,V GE =V, T j =25 o C 1. ma I GES Gate-Emitter Leakage Current V GE =V GES,V CE =V, T j =25 o C 4 na R Gint Internal Gate Resistance 1.3 Ω C ies Input Capacitance 37.5 nf V CE =25V,f=1MHz, Reverse Transfer C res V GE =V 2.35 nf Capacitance Q G Gate Charge V GE =-15 +15V 5. μc t d(on) Turn-On Delay Time 434 ns t r Rise Time 114 ns t d(off) Turn-Off Delay Time 717 ns V CC =V,I C =A, t f Fall Time 179 ns R G =1.5Ω,V GE =±15V, Turn-On Switching E T j =25 o on C 46.6 mj E off Turn-Off Switching 83.3 mj t d(on) Turn-On Delay Time 469 ns t r Rise Time 127 ns t d(off) Turn-Off Delay Time 779 ns V CC =V,I C =A, t f Fall Time 331 ns R G =1.5Ω,V GE =±15V, Turn-On Switching E T j =125 o on C 71.5 mj E off Turn-Off Switching 97.1 mj t d(on) Turn-On Delay Time 481 ns t r Rise Time 129 ns t d(off) Turn-Off Delay Time 794 ns V CC =V,I C =A, t f Fall Time 349 ns R G =1.5Ω,V GE =±15V, Turn-On Switching E T j =15 o on C 78.7 mj E off Turn-Off Switching 11 mj I SC SC Data t P 1μs,V GE =15V, T j =15 o C,V CC =8V, V CEM 1V 24 A 216 STARPOWER Semiconductor Ltd. 6/6/216 3/9 SFA
Diode Characteristics T C =25 o C unless otherwise noted Symbol Parameter Test Conditions Min. Typ. Max. Unit I Diode Forward F =A,V GE =V,T j =25 o C 1.65 2.1 V F I V Voltage F =A,V GE =V,T j =125 o C 1.65 I F =A,V GE =V,T j =15 o C 1.65 Q r Recovered Charge 41 μc Peak Reverse V CC =V,I F =A, I RM 273 A Recovery Current -di/dt=39a/μs,v GE =-15V, Reverse Recovery T j =25 o C E rec 17.3 mj Energy Q r Recovered Charge 97 μc Peak Reverse V CC =V,I F =A, I RM 366 A Recovery Current -di/dt=39a/μs,v GE =-15V, Reverse Recovery T j =125 o C E rec 41.1 mj Energy Q r Recovered Charge 112 μc Peak Reverse V CC =V,I F =A, I RM 385 A Recovery Current -di/dt=39a/μs,v GE =-15V, Reverse Recovery T j =15 o C E rec 46.7 mj Energy NTC Characteristics T C =25 o C unless otherwise noted Symbol Parameter Test Conditions Min. Typ. Max. Unit R 25 Rated Resistance 5. kω R/R Deviation of R 1 T C =1 o C,R 1 =493.3Ω -5 5 % P 25 Power Dissipation 2. mw B 25/5 B-value R 2 =R 25 exp[b 25/5 (1/T 2-1/(298.15K))] 3375 K B 25/8 B-value R 2 =R 25 exp[b 25/8 (1/T 2-1/(298.15K))] 3411 K B 25/1 B-value R 2 =R 25 exp[b 25/1 (1/T 2-1/(298.15K))] 3433 K Module Characteristics T C =25 o C unless otherwise noted Symbol Parameter Min. Typ. Max. Unit R thjc Junction-to-Case (per IGBT).38 Junction-to-Case (per Diode).66 K/W R thch Case-to-Heatsink (per IGBT) Case-to-Heatsink (per Diode) Case-to-Heatsink (per Module).28.49.9 K/W M Terminal Connection Torque, Screw M6 3. 6. Mounting Torque, Screw M5 3. 6. N.m G Weight of Module 35 g 216 STARPOWER Semiconductor Ltd. 6/6/216 4/9 SFA
1 1 1 V GE =15V 1 V CE =2V 8 8 I C [A] I C [A] 4 4 Tj=25 Tj=125 Tj=15.5 1 1.5 2 2.5 3 3.5 V CE [V] Tj=25 Tj=125 Tj=15 5 6 7 8 9 1 11 12 13 V GE [V] Fig 1. IGBT Output Characteristics Fig 2. IGBT Transfer Characteristics 275 25 225 Eon Tj=125 Eoff Tj=125 Eon Tj=15 Eoff Tj=15 35 3 25 Eon Tj=125 Eoff Tj=125 Eon Tj=15 Eoff Tj=15 E [mj] 175 15 125 1 E [mj] 15 75 5 25 V CC =V R G =1.5Ω V GE =±15V 4 8 1 1 I C [A] 1 5 V CC =V I C =A V GE =±15V 3 6 9 12 15 R G [Ω] Fig 3. IGBT Switching vs. I C Fig 4. IGBT Switching vs. R G 216 STARPOWER Semiconductor Ltd. 6/6/216 5/9 SFA
14.1 1 Module IGBT 1 I C [A] 8 Z thjc [K/W].1 4 R G =1.5Ω V GE =±15V T j =15 o C 4 8 1114 V CE [V] i: 1 2 3 4 r i [K/W]:.39.32.1.2 τ i [s]:.7.247.5 3.4847.1.1.1.1 1 1 t [s] Fig 5. RBSOA Fig 6. IGBT Transient Thermal Impedance 1 1 Tj=25 Tj=125 Tj=15 6 5 Erec Tj=125 Erec Tj=15 8 4 I F [A] E [mj] 3 4 2 1 V CC =V R G =1.5Ω V GE =-15V.4.8 1.2 1.6 2 2.4 V F [V] 4 8 1 1 I F [A] Fig 7. Diode Forward Characteristics Fig 8. Diode Switching vs. I F 216 STARPOWER Semiconductor Ltd. 6/6/216 6/9 SFA
6 5 Erec Tj=125 Erec Tj=15.1 Diode 4 E [mj] 3 Z thjc [K/W].1 2 1 V CC =V I F =A V GE =-15V 3 6 9 12 15 R G [Ω] i: 1 2 3 4 r i [K/W]:.85.497.2.58 τ i [s]:.6.245.733.9951.1.1.1.1 1 1 t [s] Fig 9. Diode Switching vs. R G Fig 1. Diode Transient Thermal Impedance 1 1 R [kω] 1.1 3 6 9 12 15 T C [ o C] Fig 11. NTC Temperature Characteristic 216 STARPOWER Semiconductor Ltd. 6/6/216 7/9 SFA
Circuit Schematic Package Dimensions Dimensions in Millimeters 9 8 7 6 5 1 4 11 3 1 2 A B 216 STARPOWER Semiconductor Ltd. 6/6/216 8/9 SFA
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