IGBT Module pril 15 ersion 1 RoHS Compliant PRODUCT FETURES High Short Circuit Capability Free wheeling diodes with fast and soft reverse recovery CE(sat) with positive temperature coefficient Ultra Low Loss,High Ruggedness UL recognized,file no.e3315 PPLICTIONS Invertor Convertor Welder SMPS and UPS Induction Heating BSOLUTE MXIMUM RTINGS CES Collector Emitter oltage T J =5 GES Gate Emitter oltage ± I C DC Collector Current T C =5 15 T C = I CM Repetitive Peak Collector Current tp=1ms P tot Power Dissipation Per IGBT 63 W BSOLUTE MXIMUM RTINGS RRM Repetitive Reverse oltage T J =5 I F() verage Forward Current T C =5 I FRM Repetitive Peak Forward Current tp=1ms I t T J =, t=1ms, R = S MacMic Science & Technology Co., Ltd. dd:#1, Hua Shan Zhong Lu, New District, Changzhou City, Jiangsu Province, P. R.of China Tel.:+6-519-51637 Fax:+6-519-51691 Post Code:13 Website:www.macmicst.com 1
ELECTRICL CHRCTERISTICS Symbol Parameter/Test Conditio Min. Typ. Max. Unit GE(th) Gate Emitter Threshold oltage CE = GE, I C =3m 5. 6. 7. CE(sat) Collector Emitter I C =, GE =15, T J =5 1.. Saturation oltage I C =, GE =15, T J =. I CES Collector Leakage Current CE =, GE =, T J =5 1 m CE =, GE =, T J = 1 m I GES Gate Leakage Current CE =, GE =±15, T J =5 - n R gint Q g Integrated Gate Resistor Gate Charge CE =6, I C =, GE =±15 3. Ω µc C ies Input Capacitance 5.5 nf CE =5, GE =, f =1MHz C res Reverse Trafer Capacitance 6 pf CC =6,I C = T J =5 t d(on) Turn on Delay Time R G =1Ω, T J = 11 GE =±15, T J =5 6 t r Rise Time T J = 6 CC =6,I C = T J =5 1 t d(off) Turn off Delay Time R G =1Ω, T J = GE =±15, T J =5 6 t f Fall Time T J = CC =6,I C = T J =5 5.5 E on Turn on Energy R G =1Ω, T J = 7 GE =±15, T J =5. E off Turn off Energy T J = 7. I SC Short Circuit Current tpsc 1µS, GE =15 T J =, CC =9 R thjc Junction to Case Thermal Resistance ( Per IGBT). K /W ELECTRICL CHRCTERISTICS Symbol Parameter/Test Conditio Min. Typ. Max. Unit I F =, GE =, T J =5.5.5 Forward oltage F I F =, GE =, T J =. t rr Reverse Recovery Time I F =, R =6 I RRM Max. Reverse Recovery Current di F /dt=-/μs 9 Q RR Reverse Recovery Charge T J = 11 E rec Reverse Recovery Energy. R thjcd Junction to Case Thermal Resistance ( Per Diode).5 µc K /W
MODULE CHRCTERISTICS T Jmax Max. Junction Temperature T Jop Operating Temperature -~ T stg Storage Temperature -~ isol Isolation Breakdown oltage C, Hz(R.M.S), t=1minute 3 CTI Comparative Tracking Index > Torque to heatsink Recommended(M6) 3~5 to terminal Recommended(M5).5~5 Weight 16 Nm Nm g 5 ge=17 ge=15 ge=13 ge=11 I C () I C () ge=9 T J = 5 5..5 1. 1.5..5 3. 3.5 CE () Figure 1. Typical Output Characteristics 1 3 5 CE () Figure. Typical Output Characteristics I C () 5 CE = 5 7 9 1 11 1 13 E on E off () 16 1 CE =6 I C = GE =±15 T J = Eon Eoff 1 3 GE () Rg(Ω) Figure 3. Typical Trafer characteristics Figure. Switching Energy vs Gate Resistor 3
E on E off () 16 1 CE =6 R g =1Ω GE =±15 T J = Eon Eoff I C () 1 5 R g =1Ω GE =±15 T J = module 5 6 1 I C () CE () Figure 5. Switching Energy vs Collector Current Figure 6. Reverse Biased Safe Operating rea 9 I C () DC I F () 6 5 3 DC 5 15 5 T C ( ) Figure 7. Collector Current vs Case temperature IGBT -inverter 5 T C ( ) Figure. Forward current vs Case temperature I F () 5 5 E REC () 6 CE =6 I F = T J = 1 3 F () 1 3 Rg(Ω) Figure 9. Diode Forward Characteristics Figure 1. Switching Energy vs Gate Resistor
6 CE =6 R g =1Ω T J = 1 1 E REC () Z thjc (K/W).1.1 IGBT DIODE 5 I F ().1.1.1.1 1 1 Rectangular Pulse Duration (s) Figure 11. Switching Energy vs Forward Current Figure 1. Traient Thermal Impedance of Diode and Figure 13. Circuit Diagram Dimeio in (mm) Figure 1. Package Outline 5