SIPMOS PowerTransistor Features N channel Enhancement mode valanche rated dv/dt rated 75 C operating temperature Product Summary Drain source voltage V DS 55 V DrainSource onstate resistance R DS(on).5 Ω Continuous drain current I D Type Package Ordering Code PTO3 Q67S3 E345 PTO633 Q67S36 E345 PTO633 Q67S35 Packaging Tube Tape and Reel Tube Pin Pin Pin 3 G D S Maximum Ratings, att j = 5 C, unless otherwise specified Parameter Symbol Value Unit Continuous drain current T C =5 C T C = C I D 6 Pulsed drain current T C =5 C valanche energy, single pulse I D =,V DD =5V,R GS =5Ω IDpulse 88 E S 9 valanche energy, periodic limited by T jmax E R 5.5 Reverse diode dv/dt I S =,V DS =V,di/dt = /µs, T jmax = 75 C dv/dt 6 kv/µs Gate source voltage V GS ± V Power dissipation T C =5 C mj P tot 55 W Operating and storage temperature T j, T stg 55... +75 C IEC climatic category; DIN IEC 68 55/75/56 Data Book 5.99
Thermal Characteristics Parameter Symbol Values Unit min. typ. max. Characteristics Thermal resistance, junction case R thjc.7 K/W Thermal resistance, junction ambient, leded R thj 6 SMD version, device on PCB: @ min. footprint @ 6 cm cooling area ) R thj 6 Electrical Characteristics, at T j = 5 C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. Static Characteristics Drain source breakdown voltage V GS = V, I D =.5 m, T j = 5 C V (BR)DSS 55 V Gate threshold voltage, V GS = V DS I D = µ Zero gate voltage drain current V DS = 5 V, V GS = V, T j = 5 C V DS = 5 V, V GS = V, T j = 5 C Gatesource leakage current V GS = V, V DS = V DrainSource onstate resistance V GS = V, I D = 6 V GS(th). 3 4 I DSS µ. I GSS n R DS(on).4.5 Ω Device on mm*mm*.5mm epoxy PCB FR4 with 6 cm (one layer, 7µm thick) copper area for drain connection. PCB is vertical without blown air. Data Book 5.99
Electrical Characteristics, at T j = 5 C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. Dynamic Characteristics Transconductance g fs 7 S V DS *I D *R DS(on)max, I D = 6 Input capacitance C iss 49 65 pf V GS = V, V DS = 5 V, f = MHz Output capacitance C oss 7 5 V GS = V, V DS = 5 V, f = MHz Reverse transfer capacitance C rss 95 V GS = V, V DS = 5 V, f = MHz Turnon delay time t d(on) 5 5 ns V DD = 3 V, V GS = V, I D =, R G = Ω Rise time t r 5 V DD = 3 V, V GS = V, I D =, R G = Ω Turnoff delay time t d(off) 3 45 V DD = 3 V, V GS = V, I D =, R G = Ω Fall time V DD = 3 V, V GS = V, I D =, R G = Ω t f 5 Data Book 3 5.99
Electrical Characteristics, at T j = 5 C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. Dynamic Characteristics Gate to source charge V DD = V, I D = Q gs 3 4.5 nc Gate to drain charge V DD = V, I D = Gate charge total V DD = V, I D =, V GS = to V Gate plateau voltage V DD = V, I D = Q gd Q g 8 7 6 V (plateau) 5.9 V Reverse Diode Inverse diode continuous forward current T C = 5 C Inverse diode direct current,pulsed T C = 5 C Inverse diode forward voltage V GS = V, I F = 44 Reverse recovery time V R = 3 V, I F =I S, di F /dt = /µs Reverse recovery charge V R = 3 V, I F =l S, di F /dt = /µs I S I SM 88 V SD..8 V t rr 55 85 ns Q rr..8 µc Data Book 4 5.99
Power Dissipation P tot = f (T C ) 6 W 5 45 Drain current I D = f (T C ) parameter: V GS V 4 8 6 Ptot 35 ID 4 3 5 8 5 6 4 5 6 8 6 C 9 6 8 6 C 9 T C T C Safe operating area I D = f (V DS ) parameter : D =, T C = 5 C t p = 6.µs Transient thermal impedance Z thjc = f (t p ) parameter : D = t p /T K/W µs ID R DS(on) = V DS / I D ZthJC D =.5.. ms.5 ms 3 single pulse.. DC V V DS 4 7 6 5 4 3 s t p Data Book 5 5.99
Typ. output characteristics I D = f (V DS ) parameter: t p = 8 µs 55 P tot = 55W l 45 k j V GS [V] a 4. Typ. drainsourceonresistance R DS(on) = f (I D ) parameter: V GS.6 c d e f g h Ω i ID 35 3 5 b 4.5 i c 5. d 5.5 e h 6. f 6.5 g g 7. h 7.5 RDS(on)...8 5 f i 8. j 9. e k. l. d.6.4 l j k 5 c b a... 3. 4. V 5.5 V DS Typ. transfer characteristics I D = f (V GS ) parameter: t p = 8 µs V DS x I D x R DS(on) max 6. V GS [V] = c 5. d 5.5 e 6. f 6.5 g 7. h 7.5 i 8. j 9. k l... 4 8 6 4 8 3 36 4 I D Typ. forward transconductance g fs = f(i D ); T j = 5 C parameter: g fs 4 S ID gfs 8 3 6 4 3 4 5 6 7 8 V V GS 4 8 6 4 8 34 I D Data Book 6 5.99
Drainsource onresistance R DS(on) = f (T j ) parameter : I D = 6, V GS = V.7 Ω.4 Gate threshold voltage V GS(th) = f (T j ) parameter : V GS = V DS, I D = µ 5. V 4.4 4. RDS(on).. VGS(th) 3.6 3..8.8.6.4. 98% typ.4..6..8.4 max typ min. 6 6 C Typ. capacitances C = f (V DS ) parameter: V GS = V, f = MHz 4 T j. 6 6 C Forward characteristics of reverse diode I F = f (V SD ) parameter: T j, t p = 8 µs T j pf 3 C Ciss IF Coss Crss T j = 5 C typ T j = 75 C typ T j = 5 C (98%) T j = 75 C (98%) 5 5 5 3 V V DS..4.8..6..4 V 3. V SD Data Book 7 5.99
valanche Energy E S = f (T j ) parameter: I D =, V DD = 5 V R GS = 5 Ω mj 8 7 Typ. gate charge V GS = f (Q Gate ) parameter: I D puls = 6 V ES 6 VGS, V DS max,8 V DS max 5 8 6 3 4 6 8 C 8 T j 4 8 6 nc 6 Q Gate Drainsource breakdown voltage V (BR)DSS = f (T j ) 66 V 64 V(BR)DSS 6 6 58 56 54 5 5 6 6 C T j Data Book 8 5.99