SIPMOS Small-Signal Transistor DS 200 I D 0.48 A R DS(on) 3.5 Ω N channel Depletion mode High dynamic resistance Available grouped in GS(th) Type Ordering Tape and Reel Information Pin Configuration Marking Package Code 1 2 3 4 Q67000-S071 E6327: 1000 pcs/reel G D S D SOT-223 Maximum Ratings Parameter Symbol alues Unit Drain-source voltage DS 200 Drain-gate voltage, R GS = 20 kω DGR 200 Gate-source voltage GS ± 14 Gate-source peak voltage, aperiodic gs ± 20 Continuous drain current, T A = 28 C I D 0.48 A Pulsed drain current, T A = 25 C I D puls 1.44 Max. power dissipation, T A = 25 C P tot 1.8 W Operating and storage temperature range T j, T stg 55 + 150 C Thermal resistance 1) chip-ambient chip-soldering point R thja 70 R thjs 10 DIN humidity category, DIN 40 040 E IEC climatic category, DIN IEC 68-1 55/150/56 1) Transistor on epoxy pcb 40 mm 40 mm 1.5 mm with 6 cm 2 copper area for drain connection. K/W Semiconductor Group 1 09.96
Electrical Characteristics at T j = 25 C, unless otherwise specified. Parameter Symbol alues Unit min. typ. max. Static Characteristics Drain-source breakdown voltage GS = 3, I D = 0.25 ma Gate threshold voltage DS = 3, I D = 1 ma Drain-source cutoff current DS = 200, GS = 3 T j = 25 C = 125 C T j Gate-source leakage current GS = 20, DS = 0 Drain-source on-resistance GS = 0, I D = 0.03 A (BR)DSS 200 GS(th) 1.8 1.2 0.7 I DSS 0.2 200 I GSS 10 100 R DS(on) 2.5 3.5 µa na Ω Dynamic Characteristics Forward transconductance DS 2 I D R DS(on)max, I D = 0.48 A Input capacitance GS = 0, DS = 25, f = 1 MHz Output capacitance GS = 0, DS = 25, f = 1 MHz Reverse transfer capacitance GS = 0, DS = 25, f = 1 MHz Turn-on time t on, (t on = t d(on) + t r ) DD =30, GS = 2... + 5, R GS =50Ω, I D = 0.29 A Turn-off time t off, (t off = t d(off) + t f ) DD =30, GS = 2... + 5, R GS =50Ω, I D = 0.29 A g fs S 0.4 0.75 C iss pf 500 670 oss 40 60 C rss 12 20 t d(on) 7 10 ns t r 20 30 t d(off) 60 80 t f 50 65 Semiconductor Group 2
Electrical Characteristics (cont d) at T j = 25 C, unless otherwise specified. Parameter Symbol alues Unit Reverse Diode Continuous reverse drain current T A = 25 C Pulsed reverse drain current T A = 25 C Diode forward on-voltage I F = 0.96 A, GS = 0 min. typ. max. I S 0.48 I SM 1.44 SD 0.9 1.2 A GS(th) Grouping Symbol Limit alues Unit Test Condition min. max. Range of GS(th) GS(th) 0.15 Threshold voltage selected in groups 1) : P R S T U W 1) A specific group cannot be ordered separately. Each reel only contains transistors from one group. Package Outline GS(th) 0.95 1.08 1.21 1.34 1.47 1.60 1.73 0.80 0.93 1.06 1.19 1.32 1.45 1.58 D1 = 0.2 ; D2 = 3 ; I D = 1 ma SOT-223 Dimensions in mm Semiconductor Group 3
Characteristics at T j = 25 C, unless otherwise specified. Total power dissipation P tot = f (T A ) Safe operating area I D = f ( DS ) parameter: D = 0.01, T C = 25 C Typ. output characteristics I D = f ( DS ) parameter: t p = 80 µs Typ. drain-source on-resistance R DS(on) = f (I D ) parameter: GS Semiconductor Group 4
Typ. transfer characteristics I D = f ( GS ) parameter: t p = 80 µs, DS 2 I D R DS(on)max. Typ. forward transconductance g fs = f (I D ) parameter: DS 2 I D R DS(on)max., t p = 80 µs Drain-source on-resistance R DS(on) = f(t j ) parameter: I D = 0.03 A, GS = 0, (spread) Typ. capacitances C = f ( DS ) parameter: GS = 0, f = 1 MHz Semiconductor Group 5
Gate threshold voltage GS(th) = f (T j ) parameter: DS = 3, I D = 1 ma, (spread) Forward characteristics of reverse diode I F = f ( SD ) parameter: t p = 80 µs, T j, (spread) Drain current I D = f (T A ) parameter: GS 3 Safe operating area I D = f ( DS ) parameter: D = 0, T C = 25 C Semiconductor Group 6
Drain-source breakdown voltage (BR) DSS = b (BR)DSS (25 C) Semiconductor Group 7