IGBT 1 V CES T j =25 C 1200 V I C T s =25 C 473 A T j = 150 C T s =70 C 358 A I C T s =25 C 529 A T j = 175 C T s =70 C 425 A I Cnom 600 A I CRM I CRM = 3 x I Cnom 1800 A V GES -20... 20 V t psc V CC = 800 V V GE 15 V T j =150 C 10 µs V CES 1200 V T j -40... 175 C IGBT 2 V CES T j =25 C 650 V I C T s =25 C 389 A T j = 150 C T s =70 C 285 A I C T s =25 C 440 A T j = 175 C T s =70 C 345 A I Cnom 600 A I CRM I CRM = 2 x I Cnom 1200 A V GES -20... 20 V t psc V CC = 360 V V GE 15 V T j =150 C 10 µs V CES 650 V T j -40... 175 C Module I t(rms) T terminal =80 C, 400 A T stg -40... 125 C V isol AC sinus 50 Hz, t = 1 min 2500 V by SEMIKRON Rev. 3 10.11.2014 1
Diode 1 V RRM T j =25 C 1200 V I F T s =25 C 438 A T j = 150 C T s =70 C 322 A I F T s =25 C 495 A T j = 175 C T s =70 C 389 A I Fnom 600 A I FRM I FRM = 3 x I Fnom 1800 A I FSM 10 ms, sin 180, T j = 150 C 3240 A T j -40... 175 C Diode 2 V RRM T j =25 C 650 V I F T s =25 C 462 A T j = 150 C T s =70 C 330 A I F T s =25 C 527 A T j = 175 C T s =70 C 406 A I Fnom 600 A I FRM I FRM = 2 x I Fnom 1200 A I FSM 10 ms T j =25 C 3969 A sin 180 T j =150 C 3483 A T j -40... 175 C 2 Rev. 3 10.11.2014 by SEMIKRON
IGBT 1 V CE(sat) I C =600A T j =25 C 1.80 2.05 V V GE =15V T j =150 C 2.20 2.40 V V CE0 T j =25 C 0.8 0.9 V T j =150 C 0.7 0.8 V r CE V GE =15V T j =25 C 1.7 1.9 mω T j =150 C 2.5 2.7 mω V GE(th) V GE =V CE V, I C =24mA 5 5.8 6.5 V I CES V GE =0V V CE = 1200 V T j =25 C 0.8 2.4 ma ma C ies f=1mhz 37.2 nf V CE =25V C oes f=1mhz 2.32 nf V GE =0V C res f=1mhz 2.04 nf Q G - 8 V...+ 15 V 3750 nc R Gint T j =25 C 1.3 Ω t d(on) V CE = 300 V T j =150 C 261 ns t I C =600A r T j =150 C 231 ns R G on =2Ω E on T R G off =2Ω j =150 C 11.44 mj t d(off) di/dt on = 2584 A/µs T j =150 C 585 ns t f di/dt off =2673A/µs T j =150 C 182 ns E off V GE neg =-15V V GE pos =15V T j =150 C 44.88 mj R th(j-s) per IGBT 0.125 K/W IGBT 2 V CE(sat) I C =600A T j =25 C 1.55 1.95 V V GE =15V T j =150 C 1.75 2.1 V V CE0 T j =25 C 0.9 1 V T j =150 C 0.82 0.9 V r CE V GE =15V T j =25 C 1.1 1.6 mω T j =150 C 1.6 2 mω V GE(th) V GE =V CE V, I C =12mA 5.1 5.8 6.4 V I CES V GE =0V T j =25 C 0.45 1.35 ma V CE = 650 V T j =150 C ma C ies f=1mhz 37.005 nf V CE =25V C oes f=1mhz 2.307 nf V GE =0V C res f=1mhz 1.098 nf Q G - 8 V...+ 15 V 5002.2 nc R Gint T j =25 C 0.7 Ω t d(on) V CE = 300 V T j =150 C 121 ns t I C =600A r T j =150 C 232 ns R G on =2Ω E on T R G off =2Ω j =150 C 6.05 mj t d(off) di/dt on = 2648 A/µs T j =150 C 599 ns t f di/dt off =3097A/µs T j =150 C 156 ns E off V GE neg =-15V V GE pos =15V T j =150 C 44 mj R th(j-s) 0.19 K/W by SEMIKRON Rev. 3 10.11.2014 3
Diode 1 V F = V EC I F = 600 A V GE =15V T j =25 C 2.14 2.46 V T j =150 C 2.07 2.38 V V F0 T j =25 C 1.1 1.3 1.5 V T j =150 C 0.7 0.9 1.1 V r F T j =25 C 1.1 1.4 1.6 mω T j =150 C 1.8 2 2.1 mω I RRM I F = 600 A 251 A Q rr 21.9 µc E rr V R = 300 V 4.37 mj R th(j-s) per DIODE 0.15 K/W Diode 2 V F = V EC I F = 600 A T j =25 C 1.39 1.80 V T j =150 C 1.38 1.76 V V F0 T j =25 C 0.95 1 1.2 V T j =150 C 0.9 1 V r F I RRM T j =25 C 0.4 0.6 0.9 mω T j =150 C 0.9 1.3 mω I F = 600 A 247 A Q rr 25.2 µc E rr V R = 300 V 2.64 mj R th(j-s) per DIODE 0.18 K/W 4 Rev. 3 10.11.2014 by SEMIKRON
Module L CE 18 nh R CC'+EE' T s =25 C 1.35 mω terminal-chip T s =125 C 1.75 mω M s to heat sink (M5) 2 3 Nm M t to terminals M6 4 5 Nm Nm w 317 g Temperature Sensor R 100 T r =100 C, tolerance=3% 493 ± 5% Ω B 100/125 R (T) =R 100 exp[b 100/125 (1/T-1/T 100 )]; T[K]; 3550 ±2% K by SEMIKRON Rev. 3 10.11.2014 5
Fig. 1: Typ. IGBT 1 output characteristic, incl. R CC'+ EE' Fig. 2: Typ. Diode 1 output characteristics Fig. 3: Typ. IGBT 2 output characteristic, inclusive R CC'+ EE' Fig.4: Typ. Diode 2 output characteristic Fig. 5: Typ. IGBT 1 and Diode 2 turn-on /-off energy = f (I C ) Fig. 6: Typ. IGBT 2 and Diode 1 turn-on /-off energy = f (I C ) 6 Rev. 3 10.11.2014 by SEMIKRON
Fig. 7: Typ. IGBT 1 and Diode 2 turn-on /-off energy = f (R G ) Fig. 8: Typ. IGBT 2 and Diode 1 turn-on /-off energy = f (R G ) Fig. 9: Typ. IGBT 1 gate charge characteristic Fig. 10: Typ. IGBT 2 gate charge characteristic Fig. 11: Typ. IGBT 1 switching times vs. gate resistor R G Fig. 12: Typ. IGBT 2 switching times vs. gate resistor R G by SEMIKRON Rev. 3 10.11.2014 7
Fig. 13: Typ. IGBT 1 switching times vs. I C Fig. 14: Typ. IGBT 2 switching times vs. I C Fig.15: Typ. DIODEs transient thermal impedance Fig. 16: Typ. IGBTs transient thermal impedance 8 Rev. 3 10.11.2014 by SEMIKRON
This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX * The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is subject to prior specification and written approval by SEMIKRON. We therefore strongly recommend prior consultation of our staff. by SEMIKRON Rev. 3 10.11.2014 9