SKiM 4 Trench IGBT Modules Features IGBT 4 Trench Gate Technology Solder technology V CE(sat) with positive temperature coefficient Low inductance case Isolated by Al 2 O 3 DCB (Direct Copper Bonded) ceramic substrate Pressure contact technology for thermal contacts Spring contact system to attach driver PCB to the control terminals High short circuit capability, self limiting to 6 x I C Integrated temperature sensor Typical Applications* UPS 3 Level Inverter Remarks Case temperature limited to T s = 125 C max; T c = T s (for baseplateless modules) Recommended T op = -40 +150 C Absolute Maximum Ratings Symbol Conditions Values Unit IGBT V CES 1200 V I C T s =25 C 312 A T s =70 C 252 A I Cnom 300 A I CRM I CRM = 3xI Cnom 900 A V GES -20... 20 V t psc V CC = 800 V V GE 15 V T j =150 C 10 µs V CES 1200 V Inverse diode I F T s =25 C 261 A T s =70 C 206 A I Fnom 300 A I FRM I FRM = 3xI Fnom 900 A I FSM t p = 10 ms, sin 180, T j =25 C 1485 A Clamping diode I F T s =25 C 253 A T s =70 C 199 A I Fnom 300 A I FRM I FRM = 3xI Fnom 900 A I FSM t p = 10 ms, sin 180, T j =25 C 1620 A Module I t(rms) T terminal =80 C 400 A T stg -40... 125 C V isol AC sinus 50 Hz, t = 1 min 4000 V IGBT V CE(sat) I C =300A T j =25 C 1.80 2.05 V T j =150 C 2.20 2.40 V V CE0 T j =25 C 0.8 0.9 V T j =150 C 0.7 0.8 V r CE T j =25 C 3.3 3.8 mω T j =150 C 5 5.3 mω V GE(th) V GE =V CE, I C = 11.4 ma 5 5.8 6.5 V I CES V GE =0V T j =25 C 0.1 ma V CE = 1200 V T j =150 C ma C ies f=1mhz 18.45 nf V CE =25V C oes f=1mhz 1.22 nf V GE =0V C res f=1mhz 1.04 nf Q G V GE = - 8 V...+ 15 V 1695 nc R Gint T j =25 C 2.5 Ω by SEMIKRON Rev. 1 04.04.2014 1
SKiM 4 Trench IGBT Modules Features IGBT 4 Trench Gate Technology Solder technology V CE(sat) with positive temperature coefficient Low inductance case Isolated by Al 2 O 3 DCB (Direct Copper Bonded) ceramic substrate Pressure contact technology for thermal contacts Spring contact system to attach driver PCB to the control terminals High short circuit capability, self limiting to 6 x I C Integrated temperature sensor Typical Applications* UPS 3 Level Inverter Remarks Case temperature limited to T s = 125 C max; T c = T s (for baseplateless modules) Recommended T op = -40 +150 C t d(on) T j =150 C 168 ns V CE = 600 V t r I C =300A T j =150 C 41 ns E on R G on =0.67Ω T j =150 C 23.7 mj t d(off) R G off =0.67Ω T j =150 C 402 ns t di/dt on =0A/µs f T j =150 C 96 ns E off T j =150 C 32.39 mj R th(j-s) per IGBT 0.19 K/W Inverse diode V F = V EC I F = 300 A T j =25 C 2.2 2.5 V T j =150 C 2.2 2.5 V V F0 T j =25 C 1.1 1.3 1.5 V T j =150 C 0.7 0.9 1.1 V r F T j =25 C 2.7 3 3.4 mω T j =150 C 3.5 4.2 4.6 mω I RRM I F = 300 A T j =150 C A Q rr V GE =-15V T j =150 C 45.6 µc E rr V R = 600 V T j =150 C mj R th(j-s) per diode 0.27 K/W Clamping diode V F = V EC I F = 300 A T j =25 C 2.1 2.5 V T j =150 C 2.1 2.4 V V F0 T j =25 C 1.1 1.3 1.5 V T j =150 C 0.7 0.9 1.1 V r F T j =25 C 2.2 2.8 3.2 mω T j =150 C 3.5 3.9 4.3 mω I RRM I F = 300 A T j =150 C A Q rr V GE =-15V T j =150 C µc E rr V R = 600 V T j =150 C 14.78 mj R th(j-s) per diode 0.29 K/W Module L CE 22 nh R CC'+EE' T s =25 C 1.35 mω terminal-chip T s =125 C 1.75 mω M s to heat sink M5 2 3 Nm M t to terminals M6 4 5 Nm w 317 g Temperature Sensor R 100 T c =100 C (R 25 =5 kω) 493 ± 5% Ω B 100/125 R (T) =R 100 exp[b 100/125 (1/T-1/T 100 )]; T[K]; 3550 ±2% K 2 Rev. 1 04.04.2014 by SEMIKRON
Fig. 1: Typ. output characteristic, inclusive R CC'+ EE' Fig. 2: Typical APD output characteristic Fig. 5: Typ. turn-on /-off energy = f (I C ) Fig.7: Typical turn-on /-off energy = f (R G ) Fig. 9: Typ. gate charge characteristic Fig. 11: Typ. switching times vs. R G by SEMIKRON Rev. 1 04.04.2014 3
Fig. 13: Typ. switching times vs. I C 4 Rev. 1 04.04.2014 by SEMIKRON
SKiM 4 This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX * The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is subject to prior specification and written approval by SEMIKRON. We therefore strongly recommend prior consultation of our staff. by SEMIKRON Rev. 1 04.04.2014 5