Fast Switching EmCon Diode Feature 6 V EmCon technology Fast recovery Soft switching Low reverse recovery charge Low forward voltage 175 C operating temperature Easy paralleling Product Summary V RRM 6 V I F 9 V F 1.5 V T jmax 175 C Type Package Ordering Code PG-TO263-3 - Marking D9E6 Pin 1 PIN 2 PIN 3 NC C Maximum Ratings Maximum Ratings, at T j = 25 C, unless otherwise specified Parameter Symbol Value Unit Parameter Symbol Value Unit Repetitive peak reverse voltage V R R M 6 V Repetitive peak reverse voltage V RRM 6 V Continuous forward current TContinous forward current I F C = 25 C 19.3 I F T C = =25 C 9 C 19.3 13 T C =9 C 13 Surge non non repetitive repetitive forward forward current current T T C = 25 C, t C =25 C, t p = ms, sine halfwave p = ms, sine halfwave Maximum repetitive forward current Maximum repetitive forward current T C = 25 C, t p limited by t j,max, D =.5 T C =25 C, t p limited by T jmax, D=.5 Power dissipation TPower C = 25 C dissipation T C = =25 C 9 C I FSM I 4 F S M 4 I FRM I F R M 29.5 P tot P t o t 57.7 57.7 32.7 Operating T C =9 C junction temperature T j -4 +175 32.7 Storage Operating temperature and storage temperature T j, T stgs t g -55...+175-55...+15 C C Soldering temperature T S 26 C T 1.6mm reflow soldering, (.63 in.) MSL1 from case for s S 26 W
Thermal Characteristics Parameter Symbol Values Unit min. typ. max. Characteristics Thermal resistance, junction - case R thjc - - 2.6 K/W Thermal resistance, junction - ambient, leaded R thj - - 62 SMD version, device on PCB: @ min. footprint R thj - - 62 @ 6 cm 2 cooling area 1) - 35 - Electrical Characteristics, at T j = 25 C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. Static Characteristics Reverse leakage current I R µ V R =6V, T j =25 C - - 5 V R =6V, T j =15 C Forward voltage drop I F =9, T j =25 C I F =9, T j =15 C V F - - 75 V - 1.5 2-1.5-1 Device on 4mm*4mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 7 µm thick) copper area for drain connection. PCB is vertical without blown air. Rev. 2.4 Page 2
Electrical Characteristics, at T j = 25 C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. Dynamic Characteristics Reverse recovery time t rr ns V R =4V, I F =9, di F /dt=8/µs, T j =25 C - 75 - V R =4V, I F =9, di F /dt=8/µs, T j =125 C V R =4V, I F =9, di F /dt=8/µs, T j =15 C Peak reverse current V R =4V, I F = 9, di F /dt=8/µs, T j =25 C V R =4V, I F =9, di F /dt=8/µs, T j =125 C V R =4V, I F =9, di F /dt=8/µs, T j =15 C Reverse recovery charge V R =4V, I F =9, di F /dt=8/µs, T j =25 C V R =4V, I F =9, di F /dt=8/µs, T j =125 C V R =4V, I F =9, di F /dt=8/µs, T j =15 C Reverse recovery softness factor V R =4V, I F =9, di F /dt=8/µs, T j =25 C V R =4V, I F =9, di F /dt=8/µs, T j =125 C V R =4V, I F =9, di F /dt=8/µs, T j =15 C - - 1 112 - - -.2 - - 11.8 - - 12.3 - nc - 343 - - 585 - - 612 - S - 4 - - 5.5 - - 5.7 - Rev.2.4 Page 3
1 Power dissipation P tot = f (T C ) parameter: T j 175 C 6 W 2 Diode forward current I F = f(t C ) parameter: T j 175 C 2 Ptot 5 45 4 35 IF 16 14 12 3 25 8 2 15 6 4 5 2 25 5 75 125 C 175 25 5 75 125 C 175 T C T C 3 Typ. diode forward current I F = f (V F ) 4 Typ. diode forward voltage V F = f (T j ) 27 2 21-55 C 25 C C 15 C V 18 IF 18 15 VF 1.6 9 12 1.4 9 6 1.2 4,5 3.5 1 1.5 V 2.5 V F Rev.2.4 Page 4 1-6 -2 2 6 C 16 T j
5 Typ. reverse recovery time t rr = f (di F /dt) parameter: V R = 4V, T j = 125 C 6 Typ. reverse recovery charge Q rr =f(di F /dt) parameter: V R = 4V, T j = 125 C 35 8 nc ns 18 7 trr 25 18 9 4.5 Qrr 65 6 9 2 55 5 15 45 4.5 4 35 5 2 3 4 5 6 7 8 /µs di F /dt 7 Typ. reverse recovery current I rr = f (di F /dt) parameter: V R = 4V, T j = 125 C 14 3 2 3 4 5 6 7 8 /µs di F /dt 8 Typ. reverse recovery softness factor S = f(di F /dt) parameter: V R = 4V, T j = 125 C 14 12 11 18 9 4.5 18 9 4.5 Irr S 8 9 8 6 7 4 6 5 2 4 2 3 4 5 6 7 8 /µs di F /dt 2 3 4 5 6 7 8 /µs di F /dt Rev.2.4 Page 5
9 Max. transient thermal impedance Z thjc = f (t p ) parameter : D = t p /T K/W 1 IDP9E6 ZthJC -1-2 D =.5.2..5.2 single pulse.1-3 -7-6 -5-4 -3-2 s t p Rev.2.4 Page 6
Rev.2.4 Page 7
Published by Infineon Technologies G, 81726 München 29 Infineon Technologies G ll Rights Reserved. ttention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev.2.4 Page 8
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