CURRICULUM VITAE Dmitri A. Tenne

CURRICULUM VITAE Dmitri A. Tenne Current Position: Associate Professor Department of Physics Boise State University Boise, ID 83725-1570 Tel: 1-208 426-1633 Fax: 1-208 426-4330 E-mail: dmitritenne@boisestate.edu Web page: www.boisestate.edu/physics/tenne/ Education: 1996 PhD in physics, Institute of Semiconductor Physics, Russian Academy of Sciences, Novosibirsk, Russia 1990 Diploma (M.Sc.) in physics, Novosibirsk State University, Novosibirsk, Russia Professional history: Since 07.2011 Department of Physics, Boise State University, Associate Professor 07.2006 07.2011 Department of Physics, Boise State University, Assistant Professor 11.2000 07.2006 Department of Physics, the Pennsylvania State University; Research Associate 1990 2000 Institute of Semiconductor Physics, Novosibirsk, Russia; Junior Research scientist; Research Scientist; Senior Research Scientist 1998 2000 Chemnitz Technical University, Chemnitz, Germany, Visiting Scientist. Research interests and experience: Primary area of current research lies in the field of multifunctional oxide and semiconductor materials and nanostructures for electronic and optoelectronic applications. Metal oxides are a vast class of materials that have a wide variety of properties. They can be dielectrics, semiconductors, superconductors; possess piezoelectricity, ferroelectricity, ferromagnetism, nonlinear-optical and electro-optical properties, colossal magnetoresistance, etc. This opens huge opportunities for novel device applications of these materials. Artificially engineered nanostructures, e.g. strained ultrathin films, superlattices or nanocrystals made of oxide materials, open new ways to manipulate their properties. We apply optical spectroscopic techniques (Raman, photoluminescence) to study the fundamental physical properties of these materials. Grants and awards received: Research grant from the National Science Foundation: Raman spectroscopy of nanoscale ferroelectric and multiferroic thin films and superlattices (2010 2013; PI). Research grant from the National Science Foundation: Lattice Dynamics and Phase Transitions in Nanoscale Ferroelectric Heterostructures (2007 2010; PI). Cottrell College Science Award from the Research Corporation for Science Advancement (2007 2009; PI). DoE EPSCoR grant Incorporation of novel nanostructured materials into solar cells and nanoelectronic device structures (2007 2010, co-pi) Research grant from the Volkswagen Foundation, Germany Synthesis and optical investigation of novel semiconductor self-assembled quantum dot structures (2001 2004; PI) The State Fellowship of the Russian Federation for Outstanding Young Scientists (1997 2000) Several research grants from the Russian Foundation for Fundamental Research (1998 2003) Research fellowship from the Saxonian Ministry of Sciences and Arts, Germany (1998)

Outstanding Young Scientist Fellowships from the Siberian Branch of the Russian Academy of Sciences and the Institute of Semiconductor Physics, Novosibirsk, Russia (1996 2000) Publications and presentations Over 80 technical papers in refereed journals, conference proceedings and book chapters. Currently over 750 citations in scientific journals. Over 40 presentations at international scientific meetings and research seminars, including 7 invited talks. Teaching activities: PHYS 330 Optics PHYS 334 Optics Lab PHYS 415/515 Solid State Physics PHYS 423/523 Physical Methods of Materials Characterization PHYS 211 and 212 Labs Student mentoring: For the last three years, mentored four undergraduate students involved in research projects, and advised three graduate students (Materials Science and Engineering, BSU). Served as a member of graduate thesis committee for two more Materials Science and Engineering students. Other professional activities: Technical proposal reviewer for National Science Foundation (USA), Research Corporation for Science Advancement (USA), Czech Science Foundation (Czech Republic). Technical Journal Referee: Physical Review Letters, Physical Review B, Applied Physics Letters, Journal of Applied Physics, Advanced Materials, Advanced Functional Materials, Journal of Physics and Chemistry of Solids, Physica Status Solidi, Physica B: Condensed Matter, Physica E: Low-dimensional Systems and Nanostructures, Journal of Vacuum Science and Technology B, Journal of the American Ceramic Society, Thin Solid Films, IEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control, International Journal of Spectroscopy. Professional Society Membership: American Physical Society Materials Research Society

D. A. Tenne s list of scientific publications Book chapters: 1. D. A. Tenne, Ultraviolet Raman spectroscopy of nanoscale ferroelectric thin films and superlattices, invited chapter for the book series on Characterization Tools for Nanoscience and Nanotechnology, first volume entitled "Raman Spectroscopy for Nanoscience & Nanotechnology, edited by C. Kumar, to be published by Springer (scheduled Jan. 2012). 2. A. Milekhin, D.A. Tenne, D.R.T. Zahn, Quantum dot structures: Raman and infrared spectroscopy, in Quantum Dots and Nanowires, edited by S. Bandyopadhyay and H. S. Nalwa (American Scientific Publishers, 2003), pp. 375 419. Journals: 1. D. A. Tenne, J. D. Schmidt, A. K. Farrar, E. Vlahos, A. Soukiassian, P. P. Wu, L. Q. Chen, S. M. Nakhmanson, X. X. Xi, M. Bernhagen, P. Reiche, R. Uecker, C. W. Bark, C. B. Eom, V. Gopalan, and D. G. Schlom, Phase diagram in strained BaTiO 3 /SrTiO 3 superlattices Phys. Rev. B, 2011, submitted. 2. M. Ailavajhala, D. Nesheva, P. Chen, D. A. Tenne, H. Barnaby, and M. Mitkova, Structural studies of radiation induced effects in Ge-Se and Ge-S thin films J. Appl. Phys., 2011, submitted. 3. A. Thurber, D. G. Wingett, J. W. Rasmussen, J. Layne, L. Johnson, D. A. Tenne, J. Zhang, C. B. Hanna, and A. Punnoose, Improving the selective cancer killing ability of ZnO nanoparticles using Fe doping Nanotoxicology, 2011 (in print, published online on June 2; doi:10.3109/17435390.2011.587031). 4. A. P. Thurber, G. L. Beausoleil II, G. A. Alanko, J. J. Anghel, M. S. Jones, L. M. Johnson, J. Zhang, C. B. Hanna, D. A. Tenne, and A. Punnoose, Magnetism of ZnO Nanoparticles: Dependence on crystallite size and surfactant coating J. Appl. Phys. 109, 07C305 (2011). 5. A. F. García-Flores, D. A. Tenne, Y. J. Choi, W. J. Ren, X. X. Xi, and S. W. Cheong, Temperaturedependent Raman scattering of multiferroic Pb(Fe 1/2 Nb 1/2 )O 3, J. Phys.: Condens. Matter 23, 015401 (2011) 6. D. A. Tenne, A. K. Farrar, C. M. Brooks, T. Heeg, J. Schubert, H. W. Jang, C. W. Bark, C. M. Folkman, C. B. Eom, and D. G. Schlom, Ferroelectricity in non-stoichiometric SrTiO 3 films studied by ultraviolet Raman spectroscopy, Appl. Phys. Letters 97, 142901 (2010). 7. J. Zhang, A. Thurber, D. A. Tenne, J. W. Rasmussen, D. Wingett, C. Hanna, and A. Punnoose, Enhanced dye fluorescence in novel dye-zno nano-composites, Advanced Functional Materials 20, 4358 (2010). 8. L. M. Johnson, A. Thurber, J. Anghel, M. Sabetian, M. H. Engelhard, D. A. Tenne, C. B. Hanna. and A. Punnoose, Transition metal dopants essential for producing ferromagnetism in metal oxide nanoparticles Phys. Rev. B 82, 054419 (2010). 9. H. W. Jang, A. Kumar, S. Denev, M. D. Biegalski, P. Maksymovych, C. W. Bark, C. T. Nelson, C. M. Folkman, S. H. Baek, N. Balke, C. M. Brooks, D. A. Tenne, D. G. Schlom, L. Q. Chen, X. Q. Pan, S. V. Kalinin, V. Gopalan, and C. B. Eom, Ferroelectricity in strain-free SrTiO 3 thin films Phys. Rev. Lett. 104, 197601 (2010).

10. J. Anghel, A. Thurber, D. A. Tenne, C. Hanna, and A. Punnoose, Correlation between saturation magnetization, bandgap, and lattice volume of transition metal (M = Cr, Mn, Fe, Co, or Ni) doped Zn 1 x M x O nanoparticles J. Appl. Phys. 107, 09E314 (2010). 11. M. Mitkova, Y. Sakaguchi, D. Tenne, S. K. Bhagat, and T. L. Alford, Structural details of Ge-rich and silver-doped chalcogenide glasses for nanoionic nonvolatile memory Phys. Status Solidi (a) 207, No. 3, 621-626 (2010). 12. D. A. Tenne, P. Turner, and J. D. Schmidt, M. Biegalski, Y. L. Li, L. Q. Chen, A. Soukiassian, S. Trolier-McKinstry, D. G. Schlom, X. X. Xi, D. D. Fong, P. H. Fuoss, J. A. Eastman, G. B. Stephenson, C. Thompson, and S. K. Streiffer, Ferroelectricity in ultrathin strained BaTiO 3 films: probing the size effect by ultraviolet Raman spectroscopy Phys. Rev. Lett. 103, 177601 (2009). 13. Y. Sakaguchi, D. A. Tenne, and M. Mitkova, Oxygen-assisted photoinduced structural transformation in amorphous Ge-S films Phys. Status Solidi (b) 246, No. 8, 1813 1819 (2009). 14. Y. Sakaguchi, D. A. Tenne, and M. Mitkova, Structural development in Ge-rich Ge-S glasses Journal of Non-Crystalline Solids 355, 1792 1796 (2009). 15. D. A. Tenne, H. N. Lee, R. S. Katiyar, and X. X. Xi, Ferroelectric phase transitions in threecomponent short-period superlattices studied by ultraviolet Raman spectroscopy J. Appl. Phys. 105, 054106 (2009). 16. H. Wang, D. Wingett, M. H. Engelhard, K. Feris, K. M. Reddy, P. Turner, J. Layne, C. Hanley, J. Bell, D. Tenne, C. Wang, A. Punnoose, Fluorescent dye encapsulated ZnO particles with cellspecific toxicity for potential use in biomedical applications J. Mater. Sci.: Mater. Med. 20, 11 22 (2009). 17. D. A. Tenne and X. X. Xi, Raman spectroscopy of ferroelectric thin films and superlattices Journal of the American Ceramic Society, 91, 1820 1834 (2008). 18. A. Soukiassian, W. Tian, V. Vaithyanathan, J. H. Haeni, L. Q. Chen, X. X. Xi, D. G. Schlom, D. A. Tenne, H. P. Sun, X. Q. Pan, K. J. Choi, C. B. Eom, Y. L. Li, Q. X. Jia, C. Constantin, R. M. Feenstra, M. Bernhagen, P. Reiche, and R. Uecker, Growth of nanoscale BaTiO 3 /SrTiO 3 superlattices by molecular-beam epitaxy Journal of Materials Research.23, 1417 1432 (2008). 19. Y. L. Li, S. Y. Hu, D. Tenne, A. Soukiassian, D. G. Schlom, L. Q. Chen, X. X. Xi, K. J. Choi, C. B. Eom, A. Saxena, T. Lookman, and Q. X. Jia, Interfacial coherency and ferroelectricity of BaTiO 3 /SrTiO 3 superlattice films Appl. Phys. Lett. 91, 252904 (2007). 20. Y. L. Li, S. Y. Hu, D. Tenne, A. Soukiassian, D. G. Schlom, X. X. Xi, K. J. Choi, C. B. Eom, A. Saxena, T. Lookman, Q. X. Jia, and L. Q. Chen, Prediction of ferroelectricity in BaTiO 3 /SrTiO 3 superlattices with domains Appl. Phys. Lett. 91, 112914 (2007). 21. D. A. Tenne, I. E. Gonenli, A. Soukiassian, D. G. Schlom, S. M. Nakhmanson, K. M. Rabe, and X. X. Xi. Raman study of oxygen reduced and re-oxidized strontium titanate Phys. Rev. B, 76, 024303 (2007). 22. A. Bruchhausen, N. D. Lanzillotti-Kimura, A. Fainstein, A. Soukiassian, D. A. Tenne, D. Schlom, X. X. Xi, and A. Cantarero, Acoustic properties of nanoscale oxide heterostructures probed by UV Raman spectroscopy Journal of Physics: Conference Series 92, 012160 (2007). 23. A. Soukiassian, W. Tian, D. A. Tenne, X. X. Xi, D. G. Schlom, N. D. Lanzillotti-Kimura, A. Bruchhausen, A. Fainstein, H. P. Sun, X. Q. Pan, A. Cros, and A. Cantarero, Acoustic Bragg mirrors and cavities made using piezoelectric oxides Appl. Phys. Lett. 90, 042909 (2007).

24. D. A. Tenne, A. Bruchhausen, N. D. Lanzillotti-Kimura, A. Fainstein, R. S. Katiyar, A. Cantarero, A. Soukiassian, V. Vaithyanathan, J. H. Haeni, W. Tian, D. G. Schlom, K. J. Choi, D. M. Kim, C. B. Eom, H. P. Sun, X. Q. Pan, Y. L. Li, L. Q. Chen, Q. X. Jia, S. M. Nakhmanson, K. M. Rabe, and X. X. Xi. Probing Nanoscale Ferroelectricity by Ultraviolet Raman Spectroscopy Science, 313, 1614 (2006). 25. D. A. Tenne, X. X. Xi, A. V. Pogrebnyakov, and J. M. Redwing. Raman scattering in pure and carbon-doped MgB 2 films Phys. Rev. B 71, 132512 (2005). 26. A. Venimadhav, A. Soukiassian, D. A. Tenne, Qi Li, X. X. Xi, D. G. Schlom, R. Arroyave, Z. K. Liu, H. P. Sun, X. Q. Pan, M. Lee, and N. P. Ong, Structural and transport properties of epitaxial Na x CoO 2 thin films Appl. Phys. Lett. 87, 172104 (2005). 27. M. Yu. Ladanov, A. G. Milekhin, A. I. Toropov, A. K. Bakarov, A. K. Gutakovskii, D. A. Tenne, S. Schultze, and D. R. T. Zahn, Interface phonons in semiconductor nanostructures with quantum dots J. Exp. and Theor. Phys. 101, 554 561 (2005) [Zh. Exp. Teor. Fiz 128, 645 654 (2005)]. 28. D. A. Tenne, A. Soukiassian, X. X. Xi, H. Choosuwan, R. Guo, and A. S. Bhalla, Lattice dynamics in Ba x Sr 1-x TiO 3 thin films studied by Raman spectroscopy J. Appl. Phys. 96, 6597 (2004). 29. D. A. Tenne, A. Soukiassian, X. X. Xi, T. R. Taylor, P. J. Hansen, R. A. York, and J. S. Speck, Effect of thermal strain on the ferroelectric phase transition in polycrystalline Ba 0.5 Sr 0. 5TiO 3 thin films studied by Raman spectroscopy Appl. Phys. Lett. 85, 4124 (2004). 30. D. A. Tenne, A. Soukiassian, X. X. Xi, H. Choosuwan, R. Guo, and A. S. Bhalla, Lattice dynamics in Ba x Sr 1 x TiO 3 single crystals: a Raman study Phys. Rev. B, 70, 174302 (2004). 31. A. G. Milekhin, D. A. Tenne, A. I. Toropov, A. K. Bakarov, S. Schulze, and D. R.T. Zahn, Raman study of interface phonons in InAs quantum dot structures Phys. Stat. Sol. (c) 1, 2629 2633 (2004). 32. A. V. Pogrebnyakov, J. M. Redwing, S. Raghavan, V. Vaithyanathan, D. G. Schlom, S. Y. Xu, Qi Li, D. A. Tenne, A. Soukiassian, X. X. Xi, M. D. Johannes, D. Kasinathan, W. E. Pickett, J. S. Wu, and J. C. H. Spence, Enhancement of superconducting transition temperature in MgB2 by strain-induced bond-stretching mode softening Phys. Rev. Lett. 93, 147006 (2004). 33. A. G. Milekhin, A. I. Toropov, A. K. Bakarov, D. A. Tenne, G. Zanelatto, J. C. Galzerani, S. Schulze, and D. R. T. Zahn, Interface phonons in InAs and AlAs quantum dot structures Phys. Rev. B 70, 085314 (2004). 34. D. A. Tenne, X. X. Xi, Y. L. Li, L. Q. Chen, A. Soukiassian, M. H. Zhu, A. R. James, J. Lettieri, D. G. Schlom, W. Tian, and X. Q. Pan, Absence of low-temperature phase transitions in epitaxial BaTiO 3 thin films Phys. Rev. B 69, 174101 (2004). 35. T. S. Shamirzaev, A. M.Gilinsky, A. I. Toropov, A. K. Bakarov, D. A. Tenne, K. S. Zhuravlev, C. von Borczyskowski, and D. R. T. Zahn, Millisecond fluorescence in InAs quantum dots embedded in AlAs Physica E 20, 282 285 (2004). 36. T. S. Shamirzaev, A. M.Gilinsky, A. K. Bakarov, A. I. Toropov, D. A. Tenne, K. S. Zhuravlev, C. von Borczyskowski, and D. R. T. Zahn, Long-term dynamics of exciton photoluminescence in InAs/AlAs quantum dots Bulletin of the Russian Academy of Sciences: Physics (Izvestiya Rossiiskoi Akademii Nauk. Seriya Fizicheskaya), 68, issue 1, 21 25 (2004). 37. D. A. Tenne, A. Soukiassian, M. H. Zhu, A. M. Clark, X. X. Xi, H. Choosuwan, Qi He, R. Guo, and A. S. Bhalla. Raman study of Ba x Sr 1-x TiO 3 films: Evidence for the existence of polar nanoregions Phys. Rev. B 67, 012302 (2003).

38. T. S. Shamirzaev, A. M.Gilinsky, A. K. Bakarov, A. I. Toropov, D. A. Tenne, K. S. Zhuravlev, C. von Borczyskowski, and D. R. T. Zahn. Millisecond photoluminescence kinetics in a system of direct-bandgap InAs quantum dots in an AlAs matrix JETP Lett. 77, 389 392 (2003) [Pis'ma v Zh. Exp. Teor. Fiz. 77, 459 463 (2003)]. 39. D. A. Tenne, A. K. Bakarov, A. I. Toropov, and D. R. T. Zahn. Raman study of self-assembled InAs quantum dots embedded in AlAs: influence of growth temperature Physica E 13, 199 202 (2002). 40. M. Roy, V. C. George, A. K. Dua, P. Raj, S. Schulze, D. A. Tenne, G. Salvan and D. R. T. Zahn. Detection of nanophase at the surface of HFCVD grown diamond films using surface enhanced Raman spectroscopic technique Diamond and related materials 11, 1858-1862 (2002). 41. D. A. Tenne, O.R. Bajutova, A.K. Bakarov, A.K.Kalagin, A.G. Milekhin, A.I. Toropov, D.R.T. Zahn. The formation of InAs quantum dots in an aluminum oxide matrix Tech. Phys. Lett 28, 554-556 (2002) [Pis'ma v Zh. Tech. Fiz. 25, issue 13, pp. 44-50, (2002)]. 42. M. Roy, V. C. George, A. K. Dua, P. Raj, S. Schulze, D. A. Tenne, G. Salvan, and D. R. T. Zahn. Feed gas dependence of the surface nanophase on HFCVD grown diamond films studied by surface enhanced Raman spectroscopy Appl. Surf. Sci. 191, 334 337 (2002). 43. A.Yu. Kobitski, G. Salvan, R. Scholz, D. Tenne, T.U. Kampen, H.P. Wagner, D.R.T. Zahn. Raman spectroscopy of the PTCDA inorganic semiconductor interface: evidence for charge transfer Appl. Surf. Sci. 190, 386 389 (2002). 44. D. A. Tenne, A. M. Clark, A. R. James, K. Chen, and X. X. Xi. Soft phonon modes in Ba 0.5 Sr 0.5 TiO 3 thin films studied by Raman spectroscopy Appl. Phys. Lett. 79, 3836 3838 (2001). 45. S. Park, D. A. Tenne, G. Salvan, T. U. Kampen, and D. R. T. Zahn. Optical Spectroscopy during Growth of PTCDA-C 60 Complex Thin Films J. Phys. Chem. B 105, 12076-12081 (2001). 46. G. Salvan, D. A. Tenne, T. U. Kampen, R. Scholz, G. Jungnickel, Th. Frauenheim, and D. R. T. Zahn. Raman spectroscopy: a powerful tool for characterisation of Ag/3,4,9,10-perylenetetracarboxylic-dianhydride/GaAs heterostructures Appl. Surf. Sci. 179, 114 118 (2001). 47. D. A. Evans, H. J. Steiner, R. Middleton, T. S. Jones, C. H. Chen, K. Horn, S. Park, T. U. Kampen, D. Tenne, D. R. T. Zahn, A. Patchett, and I. T. McGovern. In-situ monitoring of the growth of copper phthalocyanine films on InSb by organic molecular beam deposition Appl. Surf. Sci. 175 176, 374 378 (2001). 48. T. U. Kampen, G. Salvan, D. A. Tenne, R. Scholz, and D.R.T. Zahn. Growth of organic films on passivated semiconductor substrates: gallium arsenide versus silicon Appl. Surf. Sci. 175 176, 326 331 (2001). 49. D. A. Tenne, V. A. Haisler, A. K. Bakarov, A. I. Toropov, A. K. Gutakovsky, A. P. Shebanin, and D. R. T. Zahn. Self-assembled islands in the (Ga,Al)As/InAs heteroepitaxial system studied by Raman spectroscopy Phys. Stat. Sol. (b) 224, 25 29 (2001). 50. G. Salvan, D. A. Tenne, A. Das, T. U. Kampen, and D.R.T. Zahn. Influence of deposition temperature on the structure of 3,4,9,10-perylene tetracarboxylic dianhydride thin films on H- passivated silicon probed by Raman spectroscopy Organic Electronics, 1, 49 56 (2000). 51. T. U. Kampen, G. Salvan, M. Friedrich, D. A. Tenne, S. Park, and D.R.T. Zahn. Optical characterisation of PTCDA films grown on passivated semiconductor substrates Appl. Surf. Sci. 166, 387 391 (2000).

52. D. A. Tenne, S. Park, T. U. Kampen, A. Das, R. Scholz, and D. R. T. Zahn. Single crystals of organic semiconductor perylene tetracarboxylic dianhydride studied by Raman spectroscopy Phys. Rev. B 61, 14564 14569 (2000). 53. D. A. Tenne, V. A. Haisler, A. I. Toropov, A. K. Bakarov, A. K. Gutakovsky, D. R. T. Zahn, and A. P. Shebanin. Raman study of self-assembled GaAs and AlAs islands embedded in InAs Phys. Rev. B 61, 13785 13790 (2000). 54. V. A. Gaisler, A. I. Toropov, A. K. Bakarov, A. K. Kalagin, N. T. Moshegov, D. A. Tenne, M. M. Kachanova, O. R. Kopp, L. A. Nenasheva, and A. S. Medvedev. Lasing characteristics of lasers with a vertical-cavity based on In 0.2 Ga 0.8 As quantum wells Tech. Phys. Lett. 25, 775-777 (1999) [Pis'ma v Zh. Tech. Fiz. 25, No.19, 40 44 (1999)]. 55. D. A. Tenne, V. A. Gaisler, A. K. Bakarov, A. I. Toropov, A. K. Gutakovskii, A. P. Shebanin, and D. R. T. Zahn. Optical phonons in nanosize GaAs and AlAs clusters in an InAs matrix JETP Lett. 70, 469 475 (1999) [Pis'ma v Zh. Exp. Teor. Fiz. 70, 463 467 (1999)]. 56. T. U. Kampen, D. A. Tenne, S. Park, G. Salvan, R. Scholz, and D. R. T. Zahn. Raman monitoring of organic semiconductor heterostructure formation Phys. Stat. Sol. (b) 215, 431 434 (1999). 57. D. A. Tenne, V. A. Haisler, N. T. Moshegov, A. I. Toropov, A. P. Shebanin, and D. R. T. Zahn. Forward Raman scattering in GaAs/AlAs superlattices: Study of optical phonon anisotropy European Physical Journal B 8, 371 376 (1999). 58. D. A. Tenne, V. A. Gaisler, N. T. Moshegov, A. I. Toropov, and A. P. Shebanin. Anisotropy of optical phonons in semiconductor superlattices: Raman scattering experiments JETP Lett. 68, 53 58 (1998) [ Pis'ma v Zh. Exp. Teor. Fiz. 68, 50 55 (1998)]. 59. V. A. Gaisler, D. A. Tenne, N. T. Moshegov, A. I. Toropov, A. P. Shebanin, and A. A. Yaskin. Phonon spectra of GaAs/AlAs superlattices: the direct and inverse spectral problems Physics of the Solid State 38, 1235 1241 (1996) [Fiz. tverd. tela 38, 2242 2252 (1996)]. 60. V. A. Haisler, D. A. Tenne, N. T. Moshegov, A. I. Toropov, I. I. Marakhovka, and A. P. Shebanin. Confined optical phonons in the AlAs layers of GaAs/AlAs superlattices JETP Lett. 61, 376 380 (1995) [Pis'ma v Zh. Exp. Teor. Fiz. 61, 371 374 (1995)]. 61. V. A. Haisler, D. A. Tenne, A. O. Govorov, N. T. Moshegov, A. K. Bakarov, A. I. Toropov, and A. P. Shebanin. Raman study of electron-phonon interaction in GaAs/AlAs superlattices and quantum wells Physics of low-dimensional structures, No.10, 1 7 (1994). 62. V. A. Gaisler, D. A. Tenne, A. O. Govorov, A. K. Bakarov, A. I. Toropov, and A. P.Shebanin. Raman scattering by LO phonons in GaAs/AlAs superlattices with ultrathin AlAs layers JETP Lett. 57, 231 234 (1993) [Pis'ma v Zh. Exp. Teor. Fiz. 57, 222 224 (1993)]. 63. V. A. Gaisler, D. A. Tenne, A. O. Govorov, N. T. Moshegov, A. I. Toropov, and A. P. Shebanin. Raman scattering in GaAs/AlAs structures with paired quantum wells JETP Lett. 57, 54 57 (1993) [Pis'ma v Zh. Exp. Teor. Fiz. 57, 51 54 (1993)]. 64. A. J. Shields, C. Trallero-Giner, M. Cardona, H. T. Grahn, K. Ploog, V. A. Haisler, D. A. Tenne, N. T. Moshegov, and A. I. Toropov. Raman scattering in GaAs/AlAs superlattices under electric fields Phys. Rev. B 46, 6990 7001 (1992). 65. V. A. Gaisler, D. A. Tenne, N. T. Moshegov, A. I. Toropov, A. P. Shebanin, and N. V. Nomerotskii. Determination of the period and sharpness of heteroboundaries of semiconductor superlattices by Raman scattering Tech. Phys. Lett. 17, 566 568 (1991) [Pis'ma v Zh. Tech. Fiz. 17, No.15, 84 88 (1991)].

International Conference Proceedings: 1. A. Venimadhav, D. A. Tenne, M. J. Wilson, P. Schiffer, Q. Li, J. H. Lee, D. G. Schlom. and X. X. Xi, Growth and magnetic properties of La 2 NiMnO 6 epitaxial thin films, AIP Conference Proceedings, 1347, 53 56 (2011). [Proceedings of the International Conference on Magnetic Materials, Kolkata, India, 2010]. 2. A. F. García-Flores, D. A. Tenne, W. J. Ren, X. X. Xi, and S.-W. Cheong, Multiferroic Pb(Fe 1/2 Nb 1/2 )O 3 Single Crystals: A Raman scattering study, AIP Conference Proceedings, 1267, 1186 (2010). [Proceedings of the XXII International Conference on Raman Spectroscopy, Boston, MA, 2010] 3. A. G. Milekhin, A.I. Toropov, A. K. Bakarov, M. Y. Ladanov, A. K. Gutakovsky, D. A. Tenne, G. Zanelatto, J. C. Galzerani, S. Schulze, and D. R. T. Zahn, Phonons in InGaAs/AlGaAs Quantum Dot Superlattices: a Raman study Institute of Physics Conference Series, 187, 94-101 (2006) [Proceedings of the 12th International Conference on Narrow Gap Semiconductors, Toulouse, France, 2005]. 4. D. A. Tenne, A. G. Milekhin, A. K. Bakarov, A. I. Toropov, G. Zanelatto, J. C. Galzerani, S. Schulze, and D. R. T. Zahn, Interface phonons of quantum dots in InAs/(Al,Ga)As heteroepitaxial system: a Raman study AIP Conference Proceedings, 772, 693 (2005) [Proceedings of the XXVII International Conference on the Physics of Semiconductors, Flagstaff, AZ, USA, 2004] 5. T. S. Shamirzaev, A. M. Gilinsky, A. I. Toropov, A. K. Bakarov, D. A. Tenne, K. S. Zhuravlev, S. Schulze, C. von Borczyskowski, and D.R.T. Zahn, Mechanism of recombination in InAs quantum dots in indirect bandgap AlGaAs matrices AIP Conference Proceedings, 772, 629 (2005). [Proceedings of the XXVII International Conference on the Physics of Semiconductors, Flagstaff, AZ, USA, 2004] 6. A. G. Milekhin, D. A. Tenne, A. I. Toropov, A. K. Bakarov, O. R. Bajutova, V. A. Haisler, S. Schulze, and D. R. T. Zahn. Optical investigation of selectively oxidized InGaAs/AlAs quantum dot structures Proceedings of 12th International Symposium Nanostructures: Physics and Technology, St Petersburg, Russia, 252 (2004). 7. T. S. Shamirzaev, A. M. Gilinsky, A. I. Toropov, A. K. Bakarov, D. A. Tenne, K. S. Zhuravlev, S. Schulze, C. von Borczyskowski, and D. R. T. Zahn. Photoluminescence kinetics in InAs quantum dots in an indirect bandgap AlGaAs matrix. Proceedings of 12th International Symposium Nanostructures: Physics and Technology, St Petersburg, Russia, 260 (2004). 8. C. Aku-Leh, T. A. Eckhanse, A. V. Bragas, R. Merlin, X. H. Zeng, A. V. Pogrebnyakov, D. A. Tenne, and X. X. Xi, Observation of coherent superconducting gapexcitations in MgB 2 Trends in Optics and Photonics Series, Vol. 97 (International Quantum Electronics Conference, San Francisco, CA, USA, 2004), pp. 300 302. 9. T. S. Shamirzaev, A. M. Gilinsky, A. I. Toropov, A. K. Bakarov, D. A. Tenne, K. S. Zhuravlev, S. Schulze, C. von Borczyskowski, and D. R. T. Zahn, Model of photoluminescence of InAs quantum dots embedded in indirect band gap AlGaAs matrixes Proceedings of the 8th Korea - Russia International Symposium on Science and Technology, Tomsk, Russia, 2004, Vol. 3, pp. 157 160. 10. D. A. Tenne, A. G. Milekhin, A. K. Bakarov, O. R. Bajutova, V. A. Haisler, A. I. Toropov, S. Schulze, and D. R. T. Zahn, Raman spectroscopy of self-assembled InAs quantum dots in widebandgap matrices of AlAs and aluminium oxide Materials Research Society Symposium Proceedings, Vol. 737, 2003, pp. E13.8.1 E.13.8.6.

11. A. G. Milekhin, A. I. Nikiforov, M. Ladanov, O. P. Pchelyakov, D. A. Tenne, S. Schulze, and D. R. T. Zahn. Resonant Raman scattering by strained and relaxed Ge quantum dots Materials Research Society Symposium Proceedings, Vol. 737, 2003, pp. E13.7.1 E.13.7.6. 12. D. A. Tenne, A. G. Milekhin, A. K. Bakarov, O. R. Bajutova, V. A. Haisler, A. I. Toropov, and D. R. T. Zahn. Self-assembled InAs quantum dots in wide-bandgap matrices of AlAs and aluminum oxide, studied by Raman and infrared spectroscopies Physics of Semiconductors 2002. (Proceedings of the XXVI International Conference on the Physics of Semiconductors, Edinburgh, U.K., 2002) Institute of Physics Conference Series 171, D144, 2003. 13. D. A. Tenne, O. R. Bajutova, A. K. Bakarov, A. I. Toropov, A. G. Milekhin, V A. Haisler, D. R. T. Zahn. Influence of oxidation conditions on the formation of InAs quantum dots in an aluminum oxide matrix Proceedings of the International Conference Advanced Topics in Optoelectronics Microelectronics and Nanotechnologies, Bucharest, November 21 23, 2002, Proceedings of SPIE, Vol. 5227, 282 287 (2003). 14. D. A. Tenne, O. R. Bajutova, A. K. Bakarov, A. I. Toropov, A. G. Milekhin, V. A. Haisler, D. R. T. Zahn, A. K. Gutakovsky, Formation of InAs quantum dots in an aluminium oxide matrix by lateral selective wet oxidation Proceedings of the VI International Conference on Material science and material properties for infrared optoelectronics, Kiev, Ukraine, May 22-24, 2002, Proceedings of SPIE, Vol. 5065, 235 240 (2003). 15. D. A. Tenne, A. M. Clark, A. R. James, A. Soukiassian, and X. X. Xi. Lattice dynamics in Ba x Sr 1-x TiO 3 thin films studied by Raman spectroscopy AIP Conference Proceedings, Vol. 626, Issue 1, pp. 242-251 (2002). 16. D. A. Tenne, A. M. Clark, A. R. James, A. Soukiassian, K. Chen, and X. X. Xi. Raman studies of the soft phonon modes in Ba x Sr 1-x TiO 3 thin films Materials Research Society Symposium Proceedings, Vol. 688, 2002, pp. C12.5.1 C12.5.6. 17. D. A. Tenne, V. A. Haisler, A. K. Bakarov, A. I. Toropov, A. K. Gutakovsky, T. U. Kampen, D. R. T. Zahn, and A. P. Shebanin. Raman spectroscopy of self-organized clusters in (Ga,Al)As/InAs heteroepitaxial system Proceedings of the XXV International Conference on the Physics of Semiconductors, Osaka, Japan, 2000, p.1281 1282. 18. D.A. Tenne, S. Park, T. U. Kampen, and D. R. T. Zahn. Raman study of perylene tetracarboxylic dianhydride single crystals and films. Proceedings of the XVII International Conference on Raman Spectroscopy, Beijing, China, 2000, p.618 619. 19. D.A. Tenne, V.A. Haisler, N.T. Moshegov, A.I. Toropov, and A.P. Shebanin. Forward Raman scattering by optical phonons in GaAs/AlAs superlattices. Proceedings of the XVI International Conference on Raman Spectroscopy, Cape Town, South Africa, 1998, p.652 653. 20. D.A.Tenne, V.A.Haisler, N.T.Moshegov, A.I.Toropov, I.I.Marakhovka, and A.P. Shebanin. Confined AlAs LO phonons in GaAs/AlAs superlattices. Inst. Phys. Conf. Ser., N145, Chapter 3, p.443 446 (1996). (Proceedings of the 22 International Symposium on Compound Semiconductors, Cheju, Korea, 1995.) 21. D.A. Tenne, V.A. Haisler, A.O. Govorov, N.T. Moshegov, A.K. Bakarov, A.I. Toropov, and A.P. Shebanin. Specific features of Raman scattering in GaAs/AlAs coupled quantum wells and superlattices with ultrathin AlAs layers. Proceedings of the XIV International Conference on Raman Spectroscopy, Hong Kong, 1994, Additional Volume, p.121 122. 22. A.J. Shields, C. Trallero-Giner, M. Cardona, V.A. Haisler, D.A. Tenne, N.T. Moshegov and A.I. Toropov. Electric field effects on resonant Raman spectroscopy of quantum wells. Proceedings

of the XIII International Conference on Raman Spectroscopy, Würzburg, Germany, 1992, p.858 859.