MiniSKiiP 1 Features Trench 4 IGBT s Robust and soft freewheeling diodes in CAL technology Highly reliable spring contacts for electrical connections UL recognised file no. E63532 Typical Applications* Inverter up to 12 kva Typical motor power 5,5 kw Remarks V CEsat, V F = chip level value Case temp. limited to T C = 125 C max. (for baseplateless modules T C = T S ) product rel. results valid for T j 150 (recomm. T op = -40... +150 C) Absolute Maximum Ratings Symbol Conditions Values Unit Inverter - IGBT V CES T j =25 C 1200 V I C T j = 175 C T s =25 C 18 A T s =70 C 18 A I Cnom 15 A I CRM I CRM = 3 x I Cnom 45 A V GES -20... 20 V t psc V CC = 800 V V GE 15 V T j =150 C 10 µs V CES 1200 V T j -40... 175 C Inverse - Diode I F T j = 175 C T s =25 C 23 A T s =70 C 18 A I Fnom 15 A I FRM I FRM = 3 x I Fnom 45 A I FSM 10 ms, sin 180, T j =150 C 65 A T j -40... 175 C Module I t(rms) T terminal = 80 C, 20A per spring 20 A T stg -40... 125 C V isol AC sinus 50Hz, t = 1 min 2500 V Characteristics Symbol Conditions min. typ. max. Unit Inverter - IGBT V CE(sat) I C =15A T j =25 C 1.85 2.10 V V GE =15V chiplevel T j =150 C 2.25 2.45 V V CE0 T j =25 C 0.8 0.9 V r CE V GE =15V T j =150 C 0.7 0.8 V T j =25 C 70 80 m T j =150 C 103 110 m V GE(th) V GE =V CE, I C =1mA 5 5.8 6.5 V I CES V GE =0V V CE = 1200 V T j =25 C 0.1 0.3 ma C ies f=1mhz 0.90 nf V CE =25V C oes f=1mhz 0.08 nf V GE =0V C res f=1mhz 0.06 nf Q G - 8 V...+ 15 V 85 nc R Gint T j =25 C 0.00 t d(on) V CC = 600 V T j =150 C 31 ns t r I C =15A T j =150 C 30 ns R G on =39 E on T j =150 C 1.65 mj R G off =39 t d(off) di/dt on =400A/µs T j =150 C 315 ns t f di/dt off =200A/µs T j =150 C 66 ns E off V GE = +15/-15 V T j =150 C 1.5 mj R th(j-s) per IGBT 1.3 K/W ma AC by SEMIKRON Rev. 3 02.12.2011 1
MiniSKiiP 1 Features Trench 4 IGBT s Robust and soft freewheeling diodes in CAL technology Highly reliable spring contacts for electrical connections UL recognised file no. E63532 Typical Applications* Inverter up to 12 kva Typical motor power 5,5 kw Remarks V CEsat, V F = chip level value Case temp. limited to T C = 125 C max. (for baseplateless modules T C = T S ) product rel. results valid for T j 150 (recomm. T op = -40... +150 C) Characteristics Symbol Conditions min. typ. max. Unit Inverse - Diode V F = V EC I F =15A T j =25 C 2.4 2.7 V V GE =0V chiplevel T j =150 C 2.4 2.8 V V F0 T j =25 C 1.3 1.5 V T j =150 C 0.9 1.1 V r F T j =25 C 72 81 m T j =150 C 103 111 m I RRM I F =15A T j =150 C 12 A Q rr di/dt off =500A/µs V GE =-15V T j =150 C 2 µc E rr V CC = 600 V T j =150 C 0.79 mj R th(j-s) per Diode 1.92 K/W Module M s to heat sink 2 2.5 Nm w 35 g Temperatur Sensor R 100 R(T) T C =100 C (R 25 =1000 ) R(T)=1000 [1+A(T-25 C)+B(T-25 C) 2 ], A = 7.635*10-3 C -1, B = 1.731*10-5 C -2 1670 ± 3% AC 2 Rev. 3 02.12.2011 by SEMIKRON
Fig. 1: Typ. output characteristic, inclusive R CC'+ EE' Fig. 2: Rated current vs. temperature I C = f (T S ) Fig. 3: Typ. turn-on /-off energy = f (I C ) Fig. 4: Typ. turn-on /-off energy = f (R G ) Fig. 5: Typ. transfer characteristic Fig. 6: Typ. gate charge characteristic by SEMIKRON Rev. 3 02.12.2011 3
Fig. 7: Typ. switching times vs. I C Fig. 8: Typ. switching times vs. gate resistor R G Fig. 9: Transient thermal impedance of IGBT and Diode Fig. 10: CAL diode forward characteristic Fig. 11: Typ. CAL diode peak reverse recovery current Fig. 12: Typ. CAL diode recovery charge 4 Rev. 3 02.12.2011 by SEMIKRON
pinout, dimensions pinout This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX * The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is subject to prior specification and written approval by SEMIKRON. We therefore strongly recommend prior consultation of our staff. by SEMIKRON Rev. 3 02.12.2011 5