TrenchP TM Power MOSFETs P-Channel Enhancemen Mode Avalanche Raed IXTA96P85T IXTP96P85T V DSS = - 85V I D25 = - 96A R DS(on) 13mΩ TO-263 AA (IXTA) G S D (Tab) Symbol Tes Condiions Maximum Raings V DSS = 25 C o 15 C - 85 V V DGR = 25 C o 15 C, R GS = 1MΩ - 85 V S Coninuous ±15 V M Transien ±25 V I D25 = 25 C - 96 A I DM = 25 C, Pulse Widh Limied by M - 3 A I A = 25 C - 48 A E AS = 25 C 1 J P D = 25 C 298 W -55... +15 C M 15 C T sg -55... +15 C T L 1.6mm (.62 in.) from Case for 1s 3 C T SOLD Plasic Body for 1s 26 C M d Mouning Torque (TO-22 & TO-7) 1.13/1 Nm/lb.in. Weigh TO-263 2.5 g TO-22 3. g TO-7 6. g TO-22AB (IXTP) TO-7 (IXTH) G Feaures G D S D S G = Gae D = Drain S = Source Tab = Drain Inernaional Sandard Packages Avalanche Raed Exended FBSOA Fas Inrinsic Diode D (Tab) D (Tab) Low R DS(ON) and Q G Symbol Tes Condiions Characerisic Values ( = 25 C, Unless Oherwise Specified) Min. Typ. Max. BV DSS = V, I D = - 25μA - 85 V (h) V DS =, I D = - 25μA - 2. - 4. V I GSS = ± 15V, V DS = V ±1 na I DSS V DS = V DSS, = V - 1 μa = 125 C - 75 μa R DS(on) = V, I D, Noe 1 13 mω Advanages Easy o Moun Space Savings High Power Densiy Applicaions High-Side Swiching Push Pull Amplifiers DC Choppers Auomaic Tes Equipmen Curren Regulaors Baery Charger Applicaions 213 IXYS CORPORATION, All Righs Reserved DS125B(1/13)
Symbol Tes Condiions Characerisic Values ( = 25 C, Unless Oherwise Specified) Min. Typ. Max. g fs V DS = V, I D, Noe 1 4 66 S C iss 13.1 nf C oss = V, V DS = - 25V, f = 1MHz 1175 pf C rss 46 pf d(on) 23 ns Resisive Swiching Times r 34 ns V GS = V, V DS =.5 V DSS, I D d(off) 45 ns R G = 1Ω (Exernal) f 22 ns Q g(on) 18 nc Q gs = V, V DS =.5 V DSS, I D 52 nc Q gd 62 nc R hjc.42 C/W R hcs TO-22.5 C/W TO-7.21 C/W TO-7 Ouline Pins: 1 - Gae 2 - Drain 3 - Source Source-Drain Diode Symbol Tes Condiions Characerisic Values ( = 25 C, Unless Oherwise Specified) Min. Typ. Max. I S = V - 96 A I SM Repeiive, Pulse Widh Limied by M - 394 A V SD I F = - 48A, = V, Noe 1-1.3 V rr I 55 ns F = - 48A, -di/d = A/μs Q RM V 1 nc I R = - 43V, = V RM - 3.6 A TO-22 Ouline Noe 1. Pulse es, 3μs, duy cycle, d 2%. TO-263 Ouline 1. Gae 2. Drain 3. Source 4. Drain Dim. Millimeer Inches Min. Max. Min. Max. A 4.6 4.83.16.19 b.51.99.2.39 b2 1.14 1.4.45.55 c.4.74.16.29 c2 1.14 1.4.45.55 D 8.64 9.65.34.38 D1 8. 8.89.28.32 E 9.65 1.41.38.45 E1 6.22 8.13.27.32 e 2.54 BSC.1 BSC L 14.61 15.88.575.625 L1 2.29 2.79.9.11 L2 1.2 1.4.4.55 L3 1.27 1.78.5.7 L4.13.5 Pins: 1 - Gae 2 - Drain 3 - Source IXYS Reserves The Righ o Change Limis, Tes Condiions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,49,961 5,237,481 6,162,665 6,44,65 B1 6,683,344 6,727,585 7,5,734 B2 7,157,338B2 by one or more of he following U.S. paens: 4,86,72 5,17,58 5,63,37 5,381,25 6,259,123 B1 6,534,343 6,71,45 B2 6,759,692 7,63,975 B2 4,881,16 5,34,796 5,187,117 5,486,715 6,36,728 B1 6,583,55 6,71,463 6,771,478 B2 7,71,537
Fig. 1. Oupu Characerisics @ = 25ºC Fig. 2. Exended Oupu Characerisics @ = 25ºC -9-7 = V - 9V - 8V - 7V -35-25 = V - 9V - 8V - 6V - 5V -15-7V - 6V - 5V -.2 -.4 -.6 -.8-1 -1.2-1.4-2 -4-6 -8-12 -14-16 -18-9 Fig. 3. Oupu Characerisics @ = 125ºC = V - 9V - 8V - 7V 1.8 1.6 Fig. 4. R DS(on) Normalized o Value vs. Juncion Temperaure = V -7-6V - 5V RDS(on) - Normalized 1.4 1.2 1. I D = - 96A.8 -.2 -.4 -.6 -.8-1 -1.2-1.4-1.6-1.8-2.6-25 25 5 75 1 125 15 - Degrees Cenigrade Fig. 5. R DS(on) Normalized o Value vs. Drain Curren -11 Fig. 6. Maximum Drain Curren vs. Case Temperaure 1.8 = V = 125ºC -9 RDS(on) - Normalized 1.6 1.4 1.2 = 25ºC -7 1..8-15 -25-35 -25 25 5 75 1 125 15 - Degrees Cenigrade 213 IXYS CORPORATION, All Righs Reserved
Fig. 7. Inpu Admiance Fig. 8. Transconducance -14 1 = - 4ºC -12 8 25ºC = 125ºC 25ºC - 4ºC g f s - Siemens 6 4 125ºC 2-2.5-3. -3.5-4. - Vols -4.5-5. -5.5-6. -12-14 Fig. 9. Forward Volage Drop of Inrinsic Diode Fig. 1. Gae Charge IS - Amperes -25-15 = 125ºC = 25ºC VGS - Vols -9-8 -7-6 -5-4 -3 I G = -1mA -2-1 -.2 -.4 -.6 -.8-1. V SD - Vols -1.2-1.4-1.6-1.8 2 4 6 8 1 12 14 16 18 Q G - NanoCoulombs Fig. 11. Capaciance Fig. 12. Forward-Bias Safe Operaing Area 1, - 1, Capaciance - PicoFarads 1, 1, f = 1 MHz C iss C oss C rss - 1-1 R DS(on) Limi = 15ºC = 25ºC Single Pulse 1ms 1ms 1ms 1µs DC 25µs 1-5 -15-25 -35-1 - 1 IXYS Reserves The Righ o Change Limis, Tes Condiions, and Dimensions.
Fig. 13. Resisive Turn-on Rise Time vs. Juncion Temperaure Fig. 14. Resisive Turn-on Rise Time vs. Drain Curren 44 44 4 R G = 1Ω, = V 4 R G = 1Ω, = V r - Nanoseconds 36 32 28 r - Nanoseconds 36 32 28 = 25ºC 2 I D = - A = 125ºC 16 2 25 35 45 55 65 75 85 95 15 115 125 - -26-28 -32-34 -36-38 -42-44 -46-48 - Degrees Cenigrade Fig. 15. Resisive Turn-on Swiching Times vs. Gae Resisance Fig. 16. Resisive Turn-off Swiching Times vs. Juncion Temperaure 2 7 26 7 r - Nanoseconds 18 16 14 12 1 8 6 r d(on) - - - - = 125ºC, = V, - A 65 6 55 5 45 4 35 d(on) - Nanoseconds f - Nanoseconds 25 23 22 21 f d(off) - - - - R G = 1Ω, = V I D = - A 65 6 55 5 45 d(off) - Nanoseconds 4 2 3 25 2 4 2 2 4 6 8 1 12 14 16 18 2 R G - Ohms 19 35 25 35 45 55 65 75 85 95 15 115 125 - Degrees Cenigrade Fig. 17. Resisive Turn-off Swiching Times vs. Drain Curren Fig. 18. Resisive Turn-off Swiching Times vs. Gae Resisance 25 66 28 35 f d(off) - - - - = 125ºC, = - 1V 62 f d(off) - - - - = 125ºC, = V 3 f - Nanoseconds 23 22 21 TJ = 25ºC, 125ºC 58 54 5 d(off) - Nanoseconds f - Nanoseconds 2 16 12 8 I D = - A, - 48A 25 2 15 1 d(off) - Nanoseconds 2 46 4 5 19 42 - -26-28 -32-34 -36-38 -42-44 -46-48 2 4 6 8 1 12 14 16 18 2 R G - Ohms 213 IXYS CORPORATION, All Righs Reserved
Fig. 19. Maximum Transien Thermal Impedance 1.1 Z(h)JC - ºC / W.1.1.1.1.1.1.1 1 1 Pulse Widh - Seconds IXYS Reserves The Righ o Change Limis, Tes Condiions, and Dimensions. IXYS REF: T_96P85T(A6)11-8-A