IGBT Modules VCES IC 10V A Applicatio Industrial Inverters Servo Applicatio SMPS UPS Induction Heating Circuit Features Short Circuit Rated 10μs Low Stray Inductance Low Saturation Voltage Ultra Low loss HI-REL Power Terminals Lead Free, Compliant With RoHS Requirement Absolute Maximum Ratings(T C = 25 Symbol Description Values Units V CES Collector - Emitter Voltage 10 V V GES Gate-Emitter Voltage ± V I C DC Collector Current T C =25 0 A T C = A I CM(1) Peak Collector Current Repetitive T J = 5 0 A I F Diode Continuous Forward Current T J = 5 A I FM Peak FWD Current Repetitive 0 A t SC Short Circuit Withstand Time >10 μs P D Maximum Power Dissipation (IGBT) T C = 25,T Jmax =150 415 W T J Maximum Junction Temperature 150 T JOP Operating Temperature - ~ +150 T stg Storage Temperature - ~ +5 Viso Isolation Voltage (All Terminals Shorted) f=50hz, 1min 3000 V Mounting Torque Notes : Power Terminals Screw:M5 5 N*m Mounting Screw:M6 6 N*m (1) Repetitive Rating: Pulse width limited by max. junction temperature Rev.2.0, 27-May-17 1
Electrical Characteristics of IGBT (T J = 25 Symbol Item Conditio OFF Characteristics Values Min. Typ. Max. V (BR)CES Collector-Emitter Breakdown Voltage V GE = 0V, I C = 1mA 10 V I CES Collector Leakage Current Units V CE =V CES, V GE =0V, 300 ua V CE =V CES, V GE =0V, T J =5 C 3 ma I GES Gate Leakage Current V CE =0V, V GE =±V -0 0 na ON Characteristics V GE(th) Gate - Emitter Threshold Voltage V CE =V GE, I C =1mA 4 5 6.5 V V CE(sat) Collector Emitter Saturation Voltage Dynamic Characteristics I C =A,V GE =15V 1.9 V I C =A,V GE =15V, T J =5 C 2.3 V C ies Input Capacitance V CE = 25V, V GE = 0V, 13.7 nf C oes Output Capacitance f=1mhz 0.78 nf Switching Characteristics t d(on) Turn-on Delay Time 2 t r Rise Time 1 t d(off) T f Turn-off Delay Time Fall Time V CC = 0V, I C = A, R G = 15Ω, V GE =±15V, Inductive Load, T J = 25 4 170 E on Turn-on Switching Loss 9.1 mj E off Turn-off Switching Loss 5.5 mj t d(on) Turn-on Delay Time 225 t r Rise Time 145 t d(off) T f Turn-off Delay Time Fall Time V CC = 0V, I C = A, R G = 15Ω, V GE =±15V, Inductive Load, T J = 5 450 230 E on Turn-on Switching Loss 11.7 mj E off Turn-off Switching Loss 7.9 mj Q ge Gate Charge V CC =0V, I C =A, V GE =±15V 950 nc I C = 0A,V CC = 0V, RBSOA Reverse Bias Safe Operating Area V p =10V, Rg = 15Ω, V GE =+15V to 0V, T J =150 C Trapezoid SCSOA Short Circuit Safe Operating Area V CC = 0V, V GE = 15V, T J = 150 10 μs Rev.2.0, 27-May-17 2
Electrical Characteristics of FWD(T C = 25 RoHS Symbol Item Conditio Min. Typ. Max. Units V FM t rr I rr Q rr Forward Voltage Thermal Resistance Characteristics Symbol Description Min. Typ. Max. Units R θjc Junction-To-Case (IGBT Part, Per Leg) 0.26 /W R θjc Junction-To-Case (Diode Part, Per Leg) 0.38 /W R θcs Case-To-Sink (Conductive Grease Applied) 0.1 /W M Power Terminals Screw:M5 3 5 N m M Mounting Screw:M6 4 6 N m Weight Weight Of Module 1 g Performance Curves Reverse Recovery Time Peak Reverse Recovery Current Reverse Recovery Charge I F =A, V GE = 0V I F =A, di/dt =0A/μs, V rr = 0V, V GE = -15V T J = 25 2.3 T J = 5 2.1 T J = 25 130 T J = 5 215 T J = 25 45 T J = 5 T J = 25 4 T J = 5 6.5 V A µc 0 1 1 1 VGE = 15V TJ =5 TJ =25 1.2 1.5 1.8 2.1 2.4 2.7 3.0 3.3 Fig.1 Typical Saturation Voltage Characteristics 0 1 1 1 TJ =5 VGE=17V VGE=15V VGE=13V VGE=11V VGE=9V 1.0 1.5 2.0 2.5 3.0 3.5 Fig.2 Typical Output Characteristics 0 1 VGE =0V TJ =5 TJ =25 28 24 VGE =0V,f = 1 MHz Cies Coes 1 IF(A) 1 C(nF) 16 8 4 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 VF(V) Fig.3 Forward Characteristics of FWD Rev.2.0, 27-May-17 3 0 0 5 10 15 25 Fig.4 Capacitance Characteristics
24 21 18 VCC =0V,VGE =+/-15V, Rg =15 ohm,tj =5 Eoff Eon Erec RoHS 28 24 VCC =0V,VGE =+/-15V, IC =A,TJ =5 Eoff Eon Erec E(mJ) 15 9 6 E(mJ) 16 8 3 4 1 1 1 0 5 10 15 25 30 35 45 50 Rg(Ω) Fig.5 Typical Switching Loss vs. Collector Current Fig.6 Typical Switching Loss vs. Gate Resistance (T J=5 ) (T J=5 ) 0 150 50 module chip 0 0 0 0 0 0 0 10 VCES(V) Fig7 Reverse Bias Safe Operation Area (RBSOA) 0.30 0.25 ZthJC:IGBT 0.45 0. 0.35 ZthJC:Diode 0. 0.30 ZthJC(K/W) 0.15 ZthJC(K/W) 0.25 0. 0.10 0.15 0.05 0.10 0.05 0.00 0.001 0.01 0.1 T(s) 1 3 Fig.8 Traient thermal impedance (IGBT) 0.00 0.001 0.01 0.1 1 3 T(s) Fig.9 Traient thermal impedance (Diode) Rev.2.0, 27-May-17 4
1 1 Load Current(A) Duty Cycle:50% TJ =5 TC = Rg=15 ohm,vge =15V 0.6 1 10 Frequency(KHz) Fig.10 Typical Load Current vs. Frequency Package Outline Information CASE: C1 YJ Dimeio in mm Rev.2.0, 27-May-17 5