MIXW1TEH Six-Pack XPT IGBT CES = 1 = 1 CE(sat) = 1. Part name (Marking on product) MIXW1TEH 3, 31, 3 1, 17, 1 1 T1 D1 T3 D3 9 T D 19 NTC 3 T D 7 9 7 T D 1 11 T D 1 3 E773 Pin configuration see outlines. 1 33, 3, 3 13, 1, 1 Features: Easy paralleling due to the positive temperature coefficient of the on-state voltage Rugged XPT design (Xtreme light Punch Through) results in: - short circuit rated for 1 µsec. - very low gate charge - square RBSO @ 3x - low EMI Thin wafer technology combined with the XPT design results in a competitive low CE(sat) SONIC diode - fast and soft reverse recovery - low operating forward voltage pplication: C motor drives Solar inverter Medical equipment Uninterruptible power supply ir-conditioning systems Welding equipment Switched-mode and resonant-mode power supplies Package: "E3-Pack" standard outline Iulated copper base plate Soldering pi for PCB mounting Temperature see included Optimizes pin layout 9a 1 IXYS ll rights reserved 1-7
MIXW1TEH Ouput Inverter T1 - T CES collector emitter voltage = C 1 S M max. DC gate voltage max. traient collector gate voltage continuous traient collector current T C = C T C = C ± ±3 1 P tot total power dissipation T C = C 39 W CE(sat) collector emitter saturation voltage = 77 ; = 1 = C 1..1.1 (th) gate emitter threshold voltage = 3 m; = CE = C... ES collector emitter leakage current CE = CES ; = = C.3.. m m I GES gate emitter leakage current = ± n Q G(on) total gate charge CE = ; = 1 ; = 7 3 nc t d(on) t r t d(off) t f E on E off turn-on delay time current rise time turn-off delay time current fall time turn-on energy per pulse turn-off energy per pulse inductive load CE = ; = 7 = ±1 ; R G = 1 W RBSO reverse bias safe operating area = ±1 ; R G = 1 W; CEK = 1 SCSO t SC I SC short circuit safe operating area short circuit duration short circuit current 7..3 CE = 9 ; = ±1 ; R G = 1 W; non-repetitive 3 mj mj 1 µs R thjc thermal resistance junction to case (per IGBT).3 K/W Output Inverter D1 - D RRM max. repetitve reverse voltage = C 1 I F I F forward current T C = C T C = C F forward voltage I F = ; = = C Q rr I RM t rr E rec reverse recovery charge max. reverse recovery current reverse recovery time reverse recovery energy R = /dt = -1 /µs I F = ; = 1.9 1.9 1. 3 13 9. µc mj R thjc thermal resistance junction to case (per diode). K/W T C = C unless otherwise stated 9a 1 IXYS ll rights reserved - 7
MIXW1TEH Temperature Seor NTC R resistance T C = C.7. B / 337. kw K Module M T stg operating temperature max. virtual junction temperature storage temperature - - 1 1 1 C C C ISOL isolation voltage I ISOL < 1 m; / Hz 3 ~ CTI comparative tracking index M d mounting torque (M) 3 Nm d S d creep distance on surface strike distance through air 1 7. mm mm R pin-chip resistance pin to chip. mw R thch thermal resistance case to heatsink with heatsink compound. K/W Weight 3 g Equivalent Circuits for Simulation I R R IGBT T1 - T = 1 C 1.1 17.9 free wheeling diode D1 - D = 1 C 1.9 R 9.1 T C = C unless otherwise stated mw mw 9a 1 IXYS ll rights reserved 3-7
MIXW1TEH Circuit Diagram 3, 31, 3 1, 17, 1 19 1 9 1 Logo XXX XX-XXXXX YYCWx Part name Date Code Prod.Index NTC 3 33, 3, 3 7 9 7 11 1 1 3 13, 1, 1 Part number M = Module I = IGBT X = XPT = standard = Current Rating [] W = Six-Pack 1 = Reverse oltage [] T = NTC EH = E3-Pack Outline Drawing Dimeio in mm (1 mm =.39 ) Product Marking Ordering Part Name Marking on Product Delivering Mode Base Qty Ordering Code Standard MIXW1 TEH MIXW1TEH Box 9a 1 IXYS ll rights reserved - 7
MIXW1TEH Traistor T1 - T 1 1 = 1 1 1 = 1 17 19 13 11 = C I C [] [] 9.. 1. 1... 3. 3. CE [] Fig. 1 Typ. output characteristics.. 1. 1... 3. 3... CE [] Fig. Typ. output characteristics 1 1 1 = 7 CE = 1 [] [] = C 7 9 1 11 1 13 [] 1 3 Q G [nc] Fig. 3 Typ. tranfer characteristics Fig. Typ. turn-on gate charge 1 1 1 R G = 1 Ω CE = = ±1 1 9 E 1 E E off [mj] E off E on [mj] 7 E on = 7 CE = = ±1 1 1 1 [] Fig. Typ. switching energy vs. collector current 1 1 1 1 1 R G [Ω] Fig. Typ. switching energy vs. gate resistance 9a 1 IXYS ll rights reserved - 7
MIXW1TEH Inverter D1 - D 1 R = I F [] 1 Q rr [µc] 1 = C.. 1. 1... 3. F [] Fig. 7 Typ. Forward current versus F 1 1 1 1 /dt [/µs] Fig. Typ. reverse recov.charge Q rr vs. di/dt 1 7 1 R = R = I RR [] 1 t rr [] 3 1 1 1 1 /dt [/µs] Fig. 9 Typ. peak reverse current I RM vs. di/dt 1 1 1 1 /dt [/µs] Fig. 1 Typ. recovery time t rr versus di/dt R = 1 Diode IGBT E rec [mj] 1 1 1 1 /dt [/µs] Fig. 11 Typ. recovery energy E rec versus di/dt Z thjc.1 IGBT FRD [K/W] R i t i R i t i 1.7..9..37.3.7.3 3.1.3.1.3.1.....1.1.1 1 1 t p [s] Fig. 1 Typ. traient thermal impedance 9a 1 IXYS ll rights reserved - 7
MIXW1TEH NTC R [Ω] 1 7 1 1 T C [ C] Fig.13 Typ. NTC resistance vs. temperature 9a 1 IXYS ll rights reserved 7-7