5STP 18F1801 Old part no. T

Similar documents
5SGS 08D4500 Old part no. TG

5SDD 36K5000 Old part no. DV 889B

5SDF 0131Z0401. High Frequency Housingless Welding Diode. I FAVm = A I FSM = A V TO = V Applications r T = m.

5SDD 0120C0400 Old part no. DS 879D

5SDF 06D2504 Old part no. DM

5SDD 71B0400 Old part no. DS 808D

5SDF 13H4505. Fast Recovery Diode. Properties. Key Parameters. VRRM = V Enhanced Safe Operating Area. IFAVm = A Industry standard housing

5STF 11F3010 Old part no. TR Fast Thyristor

5STF 07T1414 Old part no. TR 907FC

5STF 28H2060. Fast Thyristor. VDRM, VRRM = V High operational capability. ITAV = A Optimized turn-off parameters

ABB 5STP12F4200 Control Thyristor datasheet

Asymmetric Gate turn-off Thyristor 5SGA 06D4502 PRELIMINARY

Double Thyristor Module For Phase Control MT A2

Phase Control Thyristor Type SKT552/16E

5SGA 20H2501. Gate turn-off Thyristor. V DRM = I TGQM = 2000 A I TSM = 16 ka V T0 = 1.66 V r T = 0.57 mω V DClin = 1400 V

5SGA 15F2502. Gate turn-off Thyristor. V DRM = 2500 V I TGQM = 1500 A I TSM = 10 ka V T0 = 1.55 V r T = 0.63 mω V DClin = 1400 V

ST2600C..R SERIES 2630A. Features. Typical Applications. Major Ratings and Characteristics. Bulletin I25199 rev. B 02/00 (R-PUK)

5SGF 30J4502. Gate turn-off Thyristor PRELIMINARY. V DRM = 4500 V I TGQM = 3000 A I TSM = 24 ka V T0 = 1.80 V r T = 0.70 mω V DClin = 3000 V

Rectifier Diode 5SDD 11D2800

Asymmetric Gate turn-off Thyristor 5SGA 30J4502

ST1230C..K SERIES 1745A. Features. Typical Applications. Major Ratings and Characteristics. Bulletin I25194 rev. B 01/00. case style A-24 (K-PUK)

Phase Control Thyristor Types N3165HA260 and N3165HA280 Development Type No.: NX450HA260 and NX450HA280

IXYS. Thyristor/Diode Modules MC#500. Date: 13 th Mar Data Sheet Issue: 1. Absolute Maximum Ratings V RRM V DRM [V] MAXIMUM LIMITS

IXYS. Thyristor/Diode Modules MC#650. Date: 13 th Mar Data Sheet Issue: 1. Absolute Maximum Ratings V RRM V DRM [V] MAXIMUM LIMITS

Phase Control Thyristor Types N2086NC060 to N2086NC100

Phase Control Thyristor Types N0465WN140 and N0465WN160

Asymmetric Integrated Gate- Commutated Thyristor 5SHY 35L4503

Phase Control Thyristor Types N1075LN180

Thyristor/Diode Modules M## 500 MCC MCD MDC MCA MCK MCDA MDCA

Phase Control Thyristor Types N4085ZC080 to N4085ZC120 Old Type No.: N1600CH02-12

Phase Control Thyristor Types N1588NC200 to N1588NC260

Phase Control Thyristor Types N1467NC200 to N1467NC260

Thyristor/Diode Modules M## 700 MCC MCD MDC MCA MCK MCDA MDCA

Phase Control Thyristor Types N3533Z#140 to N3533Z#220 Old Type No.: N1400CH02-20

Thyristor Modules Thyristor/Diode Modules

MTC-500, MTK-500, MTA-500 Dual SCR Power Module

ST303C..L SERIES 515A. Features. Typical Applications. Major Ratings and Characteristics. Bulletin I25186 rev. A 05/94. case style TO-200AC (B-PUK)

5SDF 08H6005 PRELIMINARY

1000PT Series. Phase Control Thyristors (Hockey PUK Version), 1000A FEATURES TYPICAL APPLICATIONS. RoHS. Nell High Power Products.

ST700C..L SERIES 910A. Features. Typical Applications. Major Ratings and Characteristics. Bulletin I25190 rev. D 04/00. case style TO-200AC (B-PUK)

Asymmetric Gate turn-off Thyristor 5SGA 15F2502

Features / Advantages: Applications: Package: Y4

Thyristor Modules Thyristor/Diode Modules

Symmetrical Gate Turn-Off Thyristor Types S0300SR12Y

3 1/4. Features / Advantages: Applications: Package: SOT-227B (minibloc)

Blocking Maximum rated values 1) Parameter Symbol Conditions Value Unit. f = 50 Hz, t p = 10 ms, T vj = C f = 5 Hz, t p = 10 ms,

ST223C..C SERIES 390A. Features. Typical Applications. Major Ratings and Characteristics. Bulletin I25174 rev. B 04/00. case style TO-200AB (A-PUK)

Features / Advantages: Applications: Package: Y4

ST733C..L SERIES 940A. Features. Typical Applications. Major Ratings and Characteristics. Bulletin I25188 rev. A 04/00. case style TO-200AC (B-PUK)

ST183C..C SERIES 370A. Features. Typical Applications. Major Ratings and Characteristics. Bulletin I25178 rev. B 04/00. case style TO-200AB (A-PUK)

Phase Control Thyristor Types N2500VC120 to N2500VC160

P100 SERIES 25A PASSIVATED ASSEMBLED CIRCUIT ELEMENTS. Features. Description. Major Ratings and Characteristics. Bulletin I27125 rev.

1 3/4 2. Features / Advantages: Applications: Package: SimBus A

ST303C..C SERIES 620A INVERTER GRADE THYRISTORS. Features. Typical Applications. Major Ratings and Characteristics. Bulletin I25172 rev.

ST333C..L SERIES 620A. Features. Typical Applications. Major Ratings and Characteristics. Bulletin I25187 rev. B 04/00. case style TO-200AC (B-PUK)

STARPOWER. Rectifier TD180PBS160C5S. General Description. Features. Typical Applications. Equivalent Circuit Schematic SEMICONDUCTOR

Converter - Brake - Inverter Module (CBI3) with Trench IGBT technology

Blocking Maximum rated values 1) Parameter Symbol Conditions 5SDF 28L4520 Unit Repetitive peak reverse voltage

Sensitive SCRs. ( Amps) Features. Electrically Isolated Packages. Glass Passivation

Phase Control Thyristor Types N1114LS120 to N1114LS180

Converter - Brake - Inverter Module (CBI3) with Trench IGBT technology

Rectifier Diode Types W3270N#200 and W3270N#220 Old Type No.: SW20-22CXC14C

Fast Symmetrical Gate Turn-Off Thyristor Type H0700KC14# to H0700KC17#

High Voltage Thyristor \ Diode Module

Passivated ultra sensitive gate thyristor in a SOT54 plastic package. Earth leakage circuit breakers or Ground Fault Circuit Interrupters (GFCI)

Thyristor \ Diode Module

Converter - Brake - Inverter Module (CBI3) with Trench IGBT technology

Features / Advantages: Applications: Package: Y4

Features / Advantages: Applications: Package: TO-240AA

Dual Diode Water Cooled Modules MD# 950

WESTCODE. An IXYS Company. Date:- 10 Oct, Data Sheet Issue:- 1

Features / Advantages: Applications: Package: TO-240AA

HFB20HJ20C. Ultrafast, Soft Recovery Diode. Features. Description. Absolute Maximum Ratings. 1 PD A V R = 200V I F(AV) = 20A

WESTCODE. Rectifier Diode Types W1856NC400 to W1856NC500 Old Type No: SW40-50CXC815. An IXYS Company. Date:- 21 Dec, Data Sheet Issue:- 1

Standard Rectifier Module

10 23, 24 21, 22 19, , 14

WESTCODE. Rectifier Diode Types W2820V#360 to W2820V#450 Old Type No.: SW36-45C/FXC1100. An IXYS Company. Date:- 9 Jul, Data Sheet Issue:- 1

Features / Advantages: Applications: Package: TO-240AA

Standard Rectifier Module

Standard Rectifier Module

Converter - Brake - Inverter Module XPT IGBT

WESTCODE. An IXYS Company. Date:- 16 Jun, Data Sheet Issue:- 1

8ETU04 8ETU04S 8ETU04-1

Features / Advantages: Applications: Package: SOT-227B (minibloc)

Features / Advantages: Applications: Package: SOT-227B (minibloc)

15ETL06PbF 15ETL06FPPbF

WESTCODE. Rectifier Diode Types W1520N#500 to W1520N#600 Old Part No.: SW46-58CXC620. An IXYS Company. Date:- 5 Apr, Data Sheet Issue:- 2

Converter - Brake - Inverter Module XPT IGBT

30ETH06 30ETH06S 30ETH06-1

MUR3020WT. Ultrafast Rectifier. t rr = 35ns I F(AV) = 30Amp V R = 200V. Bulletin PD rev. C 05/01. Features. Package Outline

Teccor brand Thyristors 1.5 Amp Sensitive SCRs

Rectifier Diode Types W0507YH360 to W0507YH450 Previous Type No.: SW36-45HXC270

HFB16HY20CC. Ultrafast, Soft Recovery Diode FRED. 1 PD B V R = 200V I F(AV) = 16A. t rr = 30ns CASE STYLE TO-257AA

BTA/BTB24, BTA25, BTA26 and T25 Series

Inverter Grade Thyristors (Hockey PUK Version), 720 A

D1 D2 D3 T1 T2 T3 5 D4 D5 D6 T4 T5 T6 7

Single Phase Fast Recovery Bridge (Power Modules), 61 A

Converter - Brake - Inverter Module (CBI 1) Trench IGBT

STARPOWER IGBT GD40PIY120C5S. General Description. Features. Typical Applications. Equivalent Circuit Schematic SEMICONDUCTOR

Six-Pack XPT IGBT MIXA30W1200TED. V CES = 1200 V I C25 = 43 A V CE(sat) = 1.8 V. Part name (Marking on product) MIXA30W1200TED

Transcription:

5STP 18F181 Phase Control Thyristor Properties 5STP 18F181 Old part no. T 918-177-18 Key Parameters High operational capability V DRM, V RRM = 1 8 V Possibility of serial and parallel connection I TAVm = 1 85 A Applications I TSM = 6 5 A Controlled rectifiers V TO =.965 V AC drives r T =.17 m Types 5STP 18F181 Conditions: V RRM, V DRM 1 8 V T j = - 15 C, half sine waveform, f = 5 Hz Mechanical Data F m Mounting force ± kn m Weight.8 kg D S D a Surface creepage distance Air strike distance 5 mm 13 mm Fig. 1 Case ABB s.r.o. Novodvorska 1768/138a, 1 1 Praha, Czech Republic tel.: + 61 36 5, http://www.abb.com/semiconductors TS - T/71/b Oct-11 1 of 5

5STP 18F181 Maximum Ratings Maximum Limits Unit V RRM V DRM I TRMS I TAVm I TSM I t (di T /dt) cr (dv D /dt) cr Repetitive peak reverse and off-state voltage T j = - 15 C RMS on-state current T c = 7 C, half sine waveform, f = 5 Hz Average on-state current T c = 7 C, half sine waveform, f = 5 Hz Peak non-repetitive surge half sine pulse, V R = V Limiting load integral half sine pulse, V R = V Critical rate of rise of on-state current I T = I TAVm, half sine waveform, f = 5 Hz, V D = /3 V DRM, t r =.3 µs, I GT = A Critical rate of rise of off-state voltage V D = /3 V DRM t p = 1 ms t p = 8.3 ms t p = 1 ms t p = 8.3 ms 1 8 V 867 A 1 85 A 6 5 8 3 5 313 3 5 A A s A/µs 1 V/µs P GAVm Maximum average gate power losses 3 W I FGM Peak gate current 1 A V FGM Peak gate voltage 1 V V RGM Reverse peak gate voltage 1 V T jmin - T jmax Operating temperature range - 15 C T stgmin - T stgmax Storage temperature range - 15 C Unless otherwise specified T j = 15 C TS - T/71/b Oct-11 of 7

5STP 18F181 Characteristics Value Unit min. typ. max. V TM Maximum peak on-state voltage I TM = A 1.3 V V T Threshold voltage.965 V r T I DM I RM t gd t q Q rr Slope resistance I T1 = 89 A, I T = 6 866 A Peak off-state current V D = V DRM Peak reverse current V R = V RRM Delay time T j = 5 C, V D =. V DRM, I TM = I TAVm, t r =.3 µs, I GT = A Turn-off time I T = A, di T /dt = 1.5 A/µs, V D = /3 V DRM, dv D /dt = 5 V/µs Recovery charge the same conditions as at t q.17 m 15 ma 15 ma µs 15 µs µc I H Holding current T j = 5 C T j = 15 C I L Latching current T j = 5 C T j = 15 C 17 9 5 35 ma ma V GT Gate trigger voltage V D = 1V, I T = A T j = - C T j = 5 C T j = 15 C.5 3 V I GT Gate trigger current V D = 1V, I T = A T j = - C T j = 5 C T j = 15 C 1 5 5 15 ma Unless otherwise specified T j = 15 C Thermal Parameters Value Unit R thjc Thermal resistance junction to case double side cooling 16. K/kW anode side cooling 5. cathode side cooling 5. R thch Thermal resistance case to heatsink double side cooling. K/kW single side cooling 8. TS - T/71/b Oct-11 3 of 7

Transient thermal impedance junction to case Z thjc ( K/kW ) 5STP 18F181 Transient Thermal Impedance Analytical function for transient thermal impedance Z thjc i 1 R (1 exp( t / )) Conditions: F m = ± kn, Double side cooled i Correction for periodic waveforms 18 sine: add 1.3 K/kW 18 rectangular: add 1.8 K/kW 1 rectangular: add 3. K/kW 6 rectangular: add 5.1 K/kW i i 1 3 i ( s ).653.1533.375.3 R i ( KkW ) 18 16 1 1 1 8 6 5.5 7.. 1.3,1,1,1 1 1 Square w ave pulse duration t d ( s ) Fig. Dependence transient thermal impedance junction to case on square pulse TS - T/71/b Oct-11 of 7

V G ( V ) I T ( A ) 5STP 18F181 On-State Characteristics V G ( V ) 1 T j = 5 C 15 C 9 8 7 6 5 3 1,5 1 1,5,5 3 V T ( V ) Fig. 3 Maximum on-state characteristics Gate Trigger Characteristics 6 1 5 1 V GTmax - C 1 5 µs 3 +5 C 8 1 ms 6 I GTmax +15 C 1 ms V GTmin 1...6.8 1 I G ( A ) I GTmin 6 8 1 1 I G ( A ) Fig. Gate trigger characteristics Fig. 5 Maximum peak gate power loss TS - T/71/b Oct-11 5 of 7

I TSM ( ka ) i dt (1 6 A s) I TSM ( ka ) 5STP 18F181 Surge Characteristics 5 5 3 i dt I TSM.5 5 35 3 3.5 15 V R = V 5 3 1.5 5 V R.5 V DRM 15 1 1 t ( ms ) 1 1 1 1 Number n of cycles at 5 Hz Fig. 6 Surge on-state current vs. pulse length, half sine wave, single pulse, Fig. 7 Surge on-state current vs. number of pulses, half sine wave, T j = T jmax V R = V, T j = T jmax TS - T/71/b Oct-11 6 of 7

5STP 18F181 P T ( W ) Power Loss and Maximum Case Temperature Characteristics PT ( W ) 35 3 5 y = 3 6 9 1 18 35 3 5 y = 3 6 9 1 18 7 15 15 1 1 5 5 8 1 16 Fig. 8 On-state power loss vs. average on-state TC ( C ) 13 1 current, sine waveform, f = 5 Hz, T = 1/f 8 1 16 Fig. 9 On-state power loss vs. average on-state TC ( C ) 13 1 current, square waveform, f = 5 Hz, T = 1/f 11 11 1 1 9 9 8 8 7 7 7 6 18 y = 3 6 9 1 8 1 16 Fig. 1 Max. case temperature vs. aver. on-state current, sine waveform, f = 5 Hz, T = 1/f 6 18 y = 3 6 9 1 8 1 16 Fig. 11 Max. case temperature vs. aver. on-state current, square waveform, f = 5 Hz, T = 1/f Note : Figures number 8 11 have been calculated without considering any turn-on and turn-off losses. They are valid for f = 5 or 6 Hz operation. Notes: TS - T/71/b Oct-11 7 of 7