C5D517H Silicon Carbide Schottky Diode Z-Rec Rectifier RM = 17 V I F, ( =135 C) = 8.8 A Q c = 69 nc Features Package 1.7kV Schottky Rectifier Zero Reverse Recovery Current High-Frequency Operation Temperature-Independent Switching Extremely Fast Switching Positive Temperature Coefficient on V F Benefits Replace Bipolar with Unipolar Rectifiers Essentially No Switching Losses Higher Efficiency Reduction of Heat Sink Requirements Parallel Devices Without Thermal Runaway Applications PIN 1 PIN 2 TO-247-2 CASE Switch Mode Power Supplies (SMPS) Boost diodes in PFC or DC/DC stages Free Wheeling Diodes in Inverter stages AC/DC converters 15V Solar Inverter Part Number Package Marking C5D517H TO-247-2 C5D517 Maximum Ratings (=25 C unless otherwise specified) Symbol Parameter Value Unit Test Conditions Note RM Repetitive Peak Reverse Voltage 17 V DC Peak Reverse Voltage 17 V I F Continuous Forward Current 18 8.8 5. A =25 C =135 C =16 C Fig. 3 I FRM Repetitive Peak Forward Surge Current 3 16 A =25 C, t P =1 ms, Half Sine Pulse =11 C, t P =1 ms, Half Sine Pulse I FSM Non-Repetitive Forward Surge Current 32 24 A =25 C, t P =1 ms, Half Sine Pulse =11 C, t P =1 ms, Half Sine Pulse P tot Power Dissipation 115 5 W =25 C =11 C Fig. 4 T J, T stg Operating Junction and Storage Temperature -55 to +175 C TO-247 Mounting Torque 1 8.8 Nm lbf-in M3 Screw 6-32 Screw 1 C5D517H Rev., 12-218
Electrical Characteristics Symbol Parameter Typ. Max. Unit Test Conditions Note V F I R Forward Voltage Reverse Current 1.5 2.2 2 12 1.8 2.5 2 3 Q C Total Capacitive Charge 69 nc C Total Capacitance 425 34 33 V μa pf I F = 5 A T J =25 C I F = 5 A T J =175 C = 17 V T J =25 C = 17 V T J =175 C = 17 V, I F = 5A di/dt = 2 A/μs T J = 25 C = V, T J = 25 C, f = 1 MHz = 8 V, T J = 25 C, f = 1 MHz = 17 V, T J = 25 C,f = 1 MHz Fig. 1 Fig. 2 Fig. 5 Fig. 6 E C Capacitance Stored Energy 49 μj = 17 V Fig. 7 Note:This is a majority carrier diode, so there is no reverse recovery charge. Thermal Characteristics Symbol Parameter Typ. Unit Note R θjc Thermal Resistance from Junction to Case 1.3 C/W Fig. 8 Typical Performance Foward Current, I I F (A) F (A) 1 9 8 7 6 5 4 3 2 1 T J = -55 C T J = 25 C T J = 75 C T J = 125 C T J = 175 C..5 1. 1.5 2. 2.5 3. 3.5 4. V F (V) F (V) Foward Voltage, V F (V) Reverse Leakage I I Current, R (ua) (ma) I RR (ua) R (μa) 1, 9 8 7 6 5 4 3 2 T J = 175 C T J = 125 C T J = 75 C T J = 25 C T J = -55 C 1 12 14 16 18 2 Reverse Voltage, R (V) (V) Figure 1. Forward Characteristics Figure 2. Reverse Characteristics 2 C5D517H Rev., 12-218
Typical Performance 7 6 5 1% Duty 2% Duty 3% Duty 5% Duty 7% Duty DC 14 12 1 I I F(peak) (A) (A) I F (A) 4 3 P TOT P Tot Tot (W) 8 6 2 4 1 2 25 5 75 1 125 15 175 ( C) C C C 25 5 75 1 125 15 175 ( C) C Figure 3. Current Derating Figure 4. Power Derating Capacitive Q Charge, c Q C (nc) c (nc) 8 7 6 5 4 3 2 1 Conditions: T J = 25 C Capacitance C (pf) (pf) 5 45 4 35 3 25 2 15 1 5 Conditions: T J = 25 C F test = 1 khz V test = 25 mv 3 6 9 12 15 18 Reverse Voltage, V R (V) R (V) 1 1 1 1 Reverse V Voltage, R (V) (V) Figure 5. Recovery Charge vs. Reverse Voltage Figure 6. Capacitance vs. Reverse Voltage 3 C5D517H Rev., 12-218
Typical Performance 6 Capacitance Stored E C Energy, (mj) E C (mj) 5 4 3 2 1 5 1 15 2 Reverse VVoltage, R (V) (V) Figure 7. Typical Capacitance Stored Energy Junction Thermal To Case Resistance Impedance, ( C/W) Z thjc ( o C/W) 1 1E-3 1E-3.5.3.1.5.2.1 SinglePulse 1E-3 1E-6 1E-6 1E-6 1E-3 1E-3 1E-3 1 Time, T (Sec) t p (s) Figure 8. Transient Thermal Impedance 4 C5D517H Rev., 12-218
Package Dimensions Package TO-247-2 PIN 1 PIN 2 CASE Inches Millimeters POS Min Max Min Max A.19.25 4.7 5.31 A1.87.12 2.21 2.59 A2.59.98 1.5 2.49 b.39.55.99 1.4 b1.65.95 1.65 2.41 c.15.35.38.89 D.819.845 2.8 21.46 D1.64.683 16.25 17.35 D2.112.124 2.86 3.16 E.62.64 15.49 16.26 E1.516.557 13.1 14.15 E2.135.21 3.43 5.1 E3.39.75 1. 1.9 E4.487.529 12.38 13.43 e.428 BSC 1.88 BSC L.78.8 19.81 2.32 L1 -.177-4.5 ØP.138.144 3.51 3.66 Q.212.244 5.38 6.2 S.238.248 6.4 6.3 T 17.5 REF. W 3.5 REF. X 4 REF. Y.5.2 Recommended Solder Pad Layout all units are in inches.4 Part Number Package Marking C5D517H TO-247-2 C5D517 TO-247-2 Note: Recommended soldering profiles can be found in the applications note here: http://www.wolfspeed.com/power_app_notes/soldering 5 C5D517H Rev., 12-218
Diode Model V ft = V T +If*R T V T =.94 + (T J * -1.*1-3 ) R T =.27 + (T J * 2.8*1-4 ) Note: T J = Diode Junction Temperature In Degrees Celsius, valid from 25 C to 175 C V T R T Notes RoHS Compliance The levels of RoHS restricted materials in this product are below the maximum concentration values (also referred to as the threshold limits) permitted for such substances, or are used in an exempted application, in accordance with EU Directive 211/65/EC (RoHS2), as implemented January 2, 213. RoHS Declarations for this product can be obtained from your Wolfspeed representative or from the Product Ecology section of our website at http:// www.wolfspeed.com/power/tools-and-support/product-ecology. REACh Compliance REACh substances of high concern (SVHCs) information is available for this product. Since the European Chemical Agency (ECHA) has published notice of their intent to frequently revise the SVHC listing for the foreseeable future,please contact a Cree representative to insure you get the most up-to-date REACh SVHC Declaration. REACh banned substance information (REACh Article 67) is also available upon request. This product has not been designed or tested for use in, and is not intended for use in, applications implanted into the human body nor in applications in which failure of the product could lead to death, personal injury or property damage, including but not limited to equipment used in the operation of nuclear facilities, life-support machines, cardiac defibrillators or similar emergency medical equipment, aircraft navigation or communication or control systems, or air traffic control systems. Related Links Cree SiC Schottky diode portfolio: http://www.wolfspeed.com/power/products#sicschottkydiodes Schottky diode Spice models: http://www.wolfspeed.com/power/tools-and-support/diode-model-request2 SiC MOSFET and diode reference designs: http://go.pardot.com/l/11562/215-7-31/349i Copyright 218 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree, the Cree logo, and Zero Recovery are registered trademarks of Cree, Inc. Cree, Inc. 46 Silicon Drive Durham, NC 2773 USA Tel: +1.919.313.53 Fax: +1.919.313.5451 www.cree.com/power 6 C5D517H Rev., 12-218