V DRM = 45 V I TGQM = 4 A I TSM = 32 ka V T =.4 V r T =.325 mω V DClink = 28 V Asymmetric Integrated Gate- Commutated Thyristor 5SHY 35L453 Highest snubberless turn-off rating Suitable for series connection Fast response (t don < 3 µs, t doff < 6 µs) High reliability Very high EMI immunity Simple fibre optic control interface and status feedback Cosmic radiation withstand rating Doc. No. 5SYA228- Jan. Blocking V DRM Repetitive peak off-state voltage 45 V V GR 2V I DRM Repetitive peak off-state current 5 ma V D = V DRM V GR 2V V DClink Permanent DC voltage for FIT failure rate 28 V Ambient cosmic radiation at sea level in open air. Mechanical data (see Fig. 8) F m min. 36 kn Mounting force max. 44 kn D p Pole-piece diameter 85 mm ±. mm H Housing thickness 26 mm ±.5 mm m Weight IGCT 3.3 kg D s Surface creepage distance 33 mm Anode to Gate D a Air strike distance 3 mm Anode to Gate l Length IGCT 45 mm ±. mm h Height IGCT 4 mm ±. mm w Width IGCT 23 mm ±. mm
5SHY 35L453 GCT Data On-state (see Fig. 2, 3,4) I TAVM Max. average on-state current 345 A I TRMS Max. RMS on-state current 2 A I TSM I 2 t Half sine wave, T C = 85 C Max. peak non-repetitive 32 ka t p = ms surge current 47 ka t p = ms Limiting load integral 5. 6 A 2 s t p = ms. 6 A 2 s t p = ms V T On-state voltage 2.7 V I T = 4 A V T Threshold voltage.4 V r T Slope resistance.325 mω I T = - 4 A T j = 25 C After surge: V D = V R = V T j = 25 C Turn-on switching di/dt crit Max. rate of rise of on-state current A/µs f = 5 Hz T j = 25 C I T = 4 A V D = 25 V t don Turn-on delay time 3µs V D = 25 V T j = 25 C t r Rise time µs I T = 4 A t on (min) Min. on-time µs R s =.8Ω L i = 2.2µH E on Turn-on energy per pulse.5 J C CL = 6.µF L CL =.3µH Turn-off switching (see Fig. 5, 6) I TGQM Max. controllable turn-off current 4 A V DM V DRM T j = 25 C V D = 25 V L CL =.3µH t doff Turn-off delay time 6. µs V D = 25 V V DM V DRM t f Fall time. µs T j = 25 C R s =.8Ω t off (min) Min. off-time µs I TGQ = 4 A L i = 2.2µH E off Turn-off energy per pulse 9.5 J C CL = 6.µF L CL =.3µH Doc. No. 5SYA228- Jan. page 2 of 8
5SHY 35L453 Gate Unit Power supply (see Fig. 7 to 9) Without galvanic isolation to power V GDC Gate Unit voltage 2 ±.5 V DC circuit. P Gin Gate Unit power consumption 52 W f S = 5 Hz, I TGQ AV = A, δ =.5 X Gate Unit power connector Optical control input/output (see Fig. 8 to ) P on CS Optical input power > -2 dbm P off CS Optical noise power < -4 dbm P on SF Optical output power > -9 dbm AMP, Type 64389-4, MTA 56, friction lock, right angle Note Valid for mm plastic optical fibre (POF) P off SF Optical noise power < -5 dbm t GLITCH Pulse width threshold 3 ns Max. pulse width without response CS Receiver for command signal Agilent, Type HFBR-2528 Note 2 SF Transmitter for status feedback Agilent, Type HFBR-528 Note 2 Note : AMP, www.amp.com Note 2: Agilent Technologies, www.semiconductor.agilent.com Doc. No. 5SYA228- Jan. page 3 of 8
Thermal 5SHY 35L453 T j Operating junction temperature range 25 C T stg Storage temperature range -4 85 C T amb Ambient operational temperature range 5 C R thjc Thermal resistance junction to case 2 K/kW Double side cooled 2 K/kW Anode side cooled 3 K/kW Cathode side cooled R thch Thermal resistance case to heatsink 6 K/kW Double side cooled 3 K/kW Single side cooled Analytical function for transient thermal impedance. Z thjc (t) = n i = R i ( - e - t / τ i ) i 2 3 4 R i(k/kw) 5.4 4.5.7.4 τ i (s).2.7.. F M = 36 44 kn Double side cooled Z thjc [K/kW] 6 4 F m = 36...44 kn Double side cooled 2 8 6 4 2-3 -2-2 t [s] Fig. Transient thermal impedance (junction-to-case) versus time (max. values). Doc. No. 5SYA228- Jan. page 4 of 8
5SHY 35L453 I T [A] 45 4 35 3 25 2 5 V T at 25 C V T at 25 C P AV [kw] 4. 3.5 3. 2.5 2..5 DC 8 square 8 sine 2 square 6 square. 5.5..5 2. 2.5 3. V T [V]...5..5 2. 2.5 I TAV [ka] Fig. 2 GCT on-state characteristics. Fig. 3 Average on-state power dissipation versus on-state current. I TSM [ka] 2 8 7 6 5 4 3 2 i 2 t I TSM i 2 t [ 6 A 2 s] 8 7 6 5 4 3 2 E off [J] 2 5 V D = 25 V V DM = 45 V R s =.8 Ω C CL = 6. µf L i = 2.2 µh L CL =.3 µh T j = 25 C 9 8 7 6 5 4 3 5 2 - - 2 3 4 5 56 2 3 4 5 67 2 3 4 567 2 t [ms] 2 3 4 I TGQ [A] Fig. 4 Surge current and fusing integral versus Fig. 5 GCT turn-off energy per pulse versus Doc. No. 5SYA228- Jan. page 5 of 8
pulse width. turn-off current. 5SHY 35L453 I TGQ [A] I GDC [A] 5 45 4 35 3 25 2 V DM V DRM R s =.8 Ω C CL = 6. µf Li = 2.2 µh L CL =.3 µη T j = 25 C T j = C 3. 2.5 2..5 fs = 5 Hz fs = 2 Hz fs = Hz duty cycle δ =.5 5..5 5. 2 3 4 V D [V] 5 I TGQ AV [A] Fig. 6 Max. repetetive turn-off current versus turn-off voltage. Fig. 7 Gate Unit Supply current. Doc. No. 5SYA228- Jan. page 6 of 8
5SHY 35L453 Ø34 Ø22 Ø2 6 x M3x2 (F-Schr.) 2 7 4 225 45 226 7. 4 5 2 2. 5 + - - X + 5 2 3 CS SF Fig. 8 Outline drawing. All dimensions are in millimeters and represent nominal values unless stated otherwise. AS-IGCT Gate Unit AS-GCT X Supply (2V DC ) Internal Supply (without galvanic isolation to power circuit) Anode CS SF Command Signal (Light) Status Feedback (Light) Tx Rx Logic Monitoring Turn- On Circuit Turn- Off Circuit Gate Cathode Fig. 9 Block diagram. Doc. No. 5SYA228- Jan. page 7 of 8
5SHY 35L453 Turn-on I TM di/dt Turn-off V DSP V DM V D I T V D.9 V D I T.9 I TGQ CS. V D CS.5 V D.4 I TGQ.3 I TGQ SF V G V G t don t don SF t doff t doff t f t r Fig. General current and voltage waveforms with IGCT - specific symbols. L i L CL R s DUT VLC C CL L Load Fig. Test circuit. ABB Semiconductors AG Doc. No. 5SYA228- Jan. Fabrikstrasse 3 CH-56 Lenzburg, Switzerland Tel: +4 ()62 888 649 Fax: +4 ()62 888 636 E-mail info@ch.abb.com Internet www.abbsem.com