New Product N-Channel -V (-) MOFET i2y PROUCT UMMARY V (V) R (on) (Ω) I (A) d Q g (Typ.).75 at V G = V 2.5.9 at V G =.5 V 8.7 2 nc FEATURE Halogen-free According to IEC 29-2-2 Available TrenchFET Power MOFET % R g Tested O-8 APPLICATION ynchronous Rectification C/C 8 2 7 3 G 5 G Top View Ordering Information: i2y-t-e3 (Lead (Pb)-free) i2y-t-ge3 (Lead (Pb)-free and Halogen-free) N-Channel MOFET ABOLUTE MAXIMUM RATING T A = 25 C, unless otherwise noted Parameter ymbol Limit Unit rain-ource Voltage V Gate-ource Voltage V G ± 2 V T C = 25 C 2.5 T C = 7 C. Continuous rain Current (T J = 5 C) I T A = 25 C 3. a, b A T A = 7 C.9 a, b Pulsed rain Current I M 5 Avalanche Current I A 33 L =. mh Avalanche Energy E A 5 mj Continuous ource-rain iode Current T C = 25 C.7 I T A = 25 C 2. a, b A T C = 25 C 5.7 Maximum Power issipation T C = 7 C 3. P T A = 25 C 2.5 a, b W T A = 7 C. a, b Operating Junction and torage Temperature Range T J, T stg - 55 to 5 C THERMAL REITANCE RATING Parameter ymbol Typical Maximum Unit Maximum Junction-to-Ambient a, c t s R thja 39 5 Maximum Junction-to-Foot (rain) teady tate R thjf 8 22 C/W Notes: a. urface Mounted on " x " FR board. b. t = s. c. Maximum under teady tate conditions is 85 C/W. d. Based on T C = 25 C. ocument Number: 8 9-392-Rev. B, 9-Mar-9
i2y New Product PECIFICATION T J = 25 C, unless otherwise noted Parameter ymbol Test Conditions Min. Typ. Max. Unit tatic rain-ource Breakdown Voltage V V G = V, I = 25 µa V V Temperature Coefficient ΔV /T J I = 25 µa V G(th) Temperature Coefficient ΔV G(th) /T J -.7 mv/ C Gate-ource Threshold Voltage V G(th) V = V G, I = 25 µa 3 V Gate-ource Leakage I G V = V, V G = ± 2 V ± na V = V, V G = V Zero Gate Voltage rain Current I V = V, V G = V, T J = 55 C 5 µa On-tate rain Current a I (on) V 5 V, V G = V 5 A rain-ource On-tate Resistance a V G = V, I = A.2.75 R (on) V G =.5 V, I = 2 A.73.9 Ω Forward Transconductance a g fs V = 5 V, I = A 55 ynamic b Input Capacitance C iss 35 Output Capacitance C oss V = 2 V, V G = V, f = MHz 335 pf Reverse Transfer Capacitance C rss 2 V Total Gate Charge Q = V, V G = V, I = A 5 77 g 2 32 nc Gate-ource Charge Q gs V = V, V G =.5 V, I = A.7 Gate-rain Charge Q gd 3. Gate Resistance R g f = MHz.75.5 Ω Turn-on elay Time t d(on) 3 5 Rise Time t r V = 2 V, R L = 2 Ω 2 Turn-Off elay Time t d(off) I A, V GEN =.5 V, R g = Ω 38 Fall Time t f 7 Turn-on elay Time t d(on) 2 ns Rise Time t r V = 2 V, R L = 2 Ω 5 Turn-Off elay Time t d(off) I A, V GEN = V, R g = Ω 32 5 Fall Time t f 8 5 rain-ource Body iode Characteristics Continuous ource-rain iode Current I T C = 25 C 32 Pulse iode Forward Current I M 5 A Body iode Voltage V I = A, V G = V.8.2 V Body iode Reverse Recovery Time t rr 25 5 ns Body iode Reverse Recovery Charge Q rr 9 38 nc I F = A, di/dt = A/µs, T J = 25 C Reverse Recovery Fall Time t a 3 ns Reverse Recovery Rise Time t b 2 Notes: a. Pulse test; pulse width 3 µs, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. tresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. 2 ocument Number: 8 9-392-Rev. B, 9-Mar-9
New Product i2y TYPICAL CHARACTERITIC 25 C, unless otherwise noted 5 V G = V thru V 8 I - rain Current (A) 3 2 V G =3V I - rain Current (A) T C = 25 C..5..5 2. V - rain-to-ource Voltage (V) Output Characteristics. 2 T C = 25 C T C = - 55 C 2 3 V G - Gate-to-ource Voltage (V) Transfer Characteristics C iss R (on) - On-Resistance (Ω).8...2 V G =.5V V G =V C - Capacitance (pf) 32 2 8 C oss C rss. 2 3 5 I - rain Current (A) On-Resistance vs. rain Current and Gate Voltage 2 3 V - rain-to-ource Voltage (V) Capacitance 2. V G - Gate-to-ource Voltage (V) 8 2 I =A V =2V V = V V = 3 V R (on) - On-Resistance (Normalized)..2.8 I =A V G =V V G =.5V 22 33 55 Q g - Total Gate Charge (nc) Gate Charge. - 5-25 25 5 75 25 5 T J - Junction Temperature ( C) On-Resistance vs. Junction Temperature ocument Number: 8 9-392-Rev. B, 9-Mar-9 3
i2y New Product TYPICAL CHARACTERITIC 25 C, unless otherwise noted.3 T J = 5 C I =A I - ource Current (A).. T J = 25 C R (on) - On-Resistance (Ω).2. T J = 25 C T J = 25 C...2...8..2 V - ource-to-rain Voltage (V) ource-rain iode Forward Voltage.. 2 3 5 7 8 9 V G - Gate-to-ource Voltage (V) On-Resistance vs. Gate-to-ource Voltage 7.3 I = 25 µa 3 V G(th) - Variance (V). -.3 I =5mA Power (W) 2 8 -. 3 -.9-5 - 25 25 5 75 25 5... T J - Junction Temperature ( C) Threshold Voltage Limited by R (on) * Time (s) ingle Pulse Power (Junction-to-Ambient) µs I - rain Current (A). ms ms ms T A = 25 C s, C BV ingle Pulse Limited.. s s V - rain-to-ource Voltage (V) * V > minimum V G at which R (on) is specified afe Operating Area, Junction-to-Ambient ocument Number: 8 9-392-Rev. B, 9-Mar-9
New Product i2y TYPICAL CHARACTERITIC 25 C, unless otherwise noted 25 2 I - rain Current (A) 5 5 25 5 75 25 5 T C - Case Temperature ( C) Current erating*, Junction-to-Foot 7..8 5.. Power (W).2 2.8 Power (W).8.72..3. 25 5 75 25 5. 25 5 75 25 5 T C - Case Temperature ( C) T A - Ambient Temperature ( C) Power erating, Junction-to-Foot Power erating, Junction-to-Ambient * The power dissipation P is based on T J(max) = 5 C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. ocument Number: 8 9-392-Rev. B, 9-Mar-9 5
i2y New Product TYPICAL CHARACTERITIC 25 C, unless otherwise noted uty Cycle =.5 Normalized Effective Transient Thermal Impedance.2. Notes:..5 P M t.2 t 2 t. uty Cycle, = t 2 2. Per Unit Base = R thja = 85 C/W 3. T JM - T A = P M Z (t) thja. ingle Pulse. urface Mounted - -3-2 quare Wave Pulse uration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient - uty Cycle =.5 Normalized Effective Transient Thermal Impedance..2..5.2. - ingle Pulse -3-2 quare Wave Pulse uration (s) Normalized Thermal Transient Impedance, Junction-to-Foot - maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for ilicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see /ppg?8. ocument Number: 8 9-392-Rev. B, 9-Mar-9
Package Information OIC (NARROW): 8-LEA JEEC Part Number: M-2 8 7 5 E H 2 3 A.25 mm (Gage Plane) h x 5 C All Leads e B A L q. mm." MILLIMETER INCHE IM Min Max Min Max A.35.75.53.9 A..2..8 B.35.5..2 C.9.25.75..8 5..89.9 E 3.8..5.57 e.27 BC.5 BC H 5.8.2.228.2 h.25.5..2 L.5.93.2.37 q 8 8...8.2 ECN: C-527-Rev. I, -ep- WG: 598 ocument Number: 792 -ep-
Application Note 82 RECOMMENE MINIMUM PA FOR O-8.72 (.39).28 (.7) APPLICATION NOTE.7 (.9).2 (.28).52 (3.8).22 (.559).5 (.27) Recommended Minimum Pads imensions in Inches/(mm) Return to Index Return to Index ocument Number: 72 22 Revision: 2-Jan-8
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