ST83C..C SERIES INVERTER GRADE THYRISTORS Hockey Puk Version Features Metal case with ceramic insulator International standard case TO-AB (A-PUK) All diffused design Center amplifying gate Guaranteed high dv/dt Guaranteed high di/dt High surge current capability Low thermal impedance High speed performance 370A Typical Applications Inverters Choppers Induction heating All types of force-commutated converters case style TO-AB (A-PUK) Major Ratings and Characteristics Parameters ST83C..C Units I T(AV) 370 A @ T hs 55 C I T(RMS) 690 A @ T hs 25 C I TSM @ Hz 4900 A @ Hz 530 A I 2 t @ Hz 20 KA2 s @ Hz 0 KA 2 s V DRM /V RRM 0 to 0 V t q range 0 to 20 µs T - to 25 C
ELECTRICAL SPECIFICATIONS Voltage Ratings Voltage V DRM /V RRM, maximum V RSM, maximum I DRM /I RRM Type number Code repetitive peak voltage non-repetitive peak voltage @ T V V ma 04 0 ST83C..C 08 0 900 Current Carrying Capability Frequency I TM I TM I TM Units o el o el µs Hz 770 6 220 54 49 0Hz 730 0 270 090 27 2420 0Hz 0 490 20 0 0 370 A Hz 3 270 8 730 0 6 Recovery voltage Vr Voltage before turn-on Vd V DRM V DRM V DRM V Rise of on-state current di/dt - - - - A/µs Heatsink temperature 55 55 55 C Equivalent values for RC circuit 47Ω / 0.22µF 47Ω / 0.22µF 47Ω / 0.22µF On-state Conduction I T(AV) Max. average on-state current 370 (30) A conduction, half sine wave @ Heatsink temperature 55 (85) C double side (single side) cooled I T(RMS) Max. RMS on-state current 690 DC@ 25 C heatsink temperature double side cooled I TSM Max. peak, one half cycle, 4900 t = 0ms No voltage non-repetitive surge current 530 A t = 8.3ms reapplied 420 t = 0ms % V RRM 430 t = 8.3ms reapplied Sinusoidal half wave, I 2 t Maximum I 2 t for fusing 20 t = 0ms No voltage Initial T max 0 t = 8.3ms reapplied 85 KA 2 s t = 0ms % V RRM 78 t = 8.3ms reapplied I 2 t Maximum I 2 t for fusing KA 2 s t = 0. to 0ms, no voltage reapplied 2
On-state Conduction V TM Max. peak on-state voltage. I TM = 0A, T max, t p = 0ms sine wave pulse V T(TO) Low level value of threshold. voltage V (6.7% x π x I T(AV) < I < π x I T(AV) ), T V T(TO)2 High level value of threshold voltage.45 (I > π x I T(AV) ), T r t Low level value of forward 0.67 slope resistance mω (6.7% x π x I T(AV) < I < π x I T(AV) ), T r High level value of forward t2 slope resistance 0.58 (I > π x I T(AV) ), T I H Maximum holding current 0 ma T = 25 C, I T > 30A I L Typical latching current 0 T = 25 C, V A = 2V, Ra = 6Ω, I G = A Switching di/dt Max. non-repetitive rate of rise T max, V DRM = rated V 0 A/µs DRM of turned-on current I TM = 2 x di/dt T = 25 C, V DM = rated V DRM, I TM = A DC, t p = µs t Typical delay time. d Resistive load, Gate pulse: 0V, 5Ω source µs Min Max T max, I TM = 300A, commutating di/dt = 20A/µs t q Max. turn-off time 0 20 V R = V, t p = µs, dv/dt: see table in device code Blocking dv/dt Maximum critical rate of rise of T linear to % V DRM, higher value V/µs off-state voltage available on request I RRM Max. peak reverse and off-state ma T I DRM leakage current max, rated V DRM /V RRM applied Triggering P GM Maximum peak gate power P G(AV) Maximum average gate power 0 W T max, f = Hz, d% = I GM Max. peak positive gate current 0 A T max, t p 5ms +V GM Maximum peak positive gate voltage 20 -V GM V T max, t p 5ms Maximum peak negative 5 gate voltage I GT Max. DC gate current required to trigger I GD Max. DC gate current not to trigger ma 20 ma V GT Max. DC gate voltage required to trigger V GD 3 Max. DC gate voltage not to trigger V 0.25 V T = 25 C, V A = 2V, Ra = 6Ω T max, rated V DRM applied 3
Thermal and Mechanical Specification T Max. operating temperature range - to 25 T stg Max. storage temperature range - to C R th-hs Max. thermal resistance, 0.7 DC operation single side cooled K/W junction to heatsink 0.08 DC operation double side cooled R thc-hs Max. thermal resistance, 0.033 K/W DC operation single side cooled case to heatsink 0.07 DC operation double side cooled F Mounting force, ± 0% 4900 N () (Kg) wt Approximate weight g Case style TO - AB (A-PUK) See Outline Table R th-hs Conduction (The following table shows the increment of thermal resistence R th-hs when devices operate at different conduction angles than DC) Conduction angle Sinusoidal conduction Rectangular conduction Units Conditions Single Side Double Side Single Side Double Side 0.05 0.06 0.0 0.0 0.08 0.09 0.09 0.09 0.024 0.024 0.026 0.026 K/W T 0.035 0.035 0.036 0.037 0.0 0.0 0.0 0.06 Ordering Information Table Device Code ST 8 3 C 08 C H K 2 3 4 5 6 7 8 9 0 - Thyristor 2 - Essential part number 3-3 = Fast turn off 4 - C = Ceramic Puk 5 - Voltage code: Code x = V RRM (See Voltage Rating Table) 6 - C = Puk Case TO-AB (A-PUK) dv/dt - t q combinations available 7 - Reapplied dv/dt code (for t q test condition) dv/dt (V/µs) 20 0 8 -t q code 0 CN DN EN FN* HN 9-0 = Eyelet term. (Gate and Aux. Cathode Unsoldered Leads) 2 CM DM EM FM HM t (µs) q 5 CL DL EL FL* HL = Fast-on term. (Gate and Aux. Cathode Unsoldered Leads) 8 CP DP EP FP HP 2 = Eyelet term. (Gate and Aux. Cathode Soldered Leads) 20 CK DK EK FK HK 3 = Fast-on term. (Gate and Aux. Cathode Soldered Leads) *Standard part number. All other types available only on request. 0 - Critical dv/dt: None = V/µsec (Standard value) L = 0V/µsec (Special selection) 4
Outline Table ANODE TO GATE CREEPAGE DISTANCE: 7.62 (0.30) MIN. STRIKE DISTANCE: 7.2 (0.28) MIN. 9 (0.75) DIA. MAX. 0.3 (0.0) MIN. 0.3 (0.0) MIN. 3.7 / 4.4 (0.54 / 0.57) 9 (0.75) DIA. MAX. 38 (.) DIA MAX. GATE TERM. FOR.47 (0.06) DIA. PIN RECEPTACLE 2 HOLES 3.56 (0.4) x.83 (0.07) MIN. DEEP 6.5 (0.26) 4.75 (0.9) 25 ± 5 Case Style TO-AB (A-PUK) All dimensions in millimeters (inches) 42 (.65) MAX. 28 (.0) Quote between upper and lower pole pieces has to be considered after application of Mounting Force (see Thermal and Mechanical Specification) Maximum Allowable Heatsink Temperature ( C) 30 20 0 90 70 (Single Side Cooled) R th-h s(dc) = 0.7 K/W Conduction Angle 0 20 2 Average On-state Current (A) M axim um Allowable Heatsink Tem perature ( C ) 30 20 ( S in g le Sid e C o o le d ) 0 R th -hs(d C ) = 0.7 K/W 90 Conduction Period 70 30 20 DC 0 2 300 3 0 A ve rag e O n -state Curre nt (A) Fig. - Current Ratings Characteristics Fig. 2 - Current Ratings Characteristics 5
Maxim um Allowable Heatsink Tem perature ( C ) 30 20 (Double Side Cooled) 0 R th-hs (D C) = 0.08 K/W 90 Conduction Angle 70 30 0 2 300 3 0 4 Average On-state Current (A) Maximum Allowable Heatsink Temperature ( C) 30 20 0 90 70 (Double Side C ooled) R th -hs (D C ) = 0.08 K/W Conduction Period 30 DC 20 0 300 0 0 700 Average On-state Current (A) Fig. 3 - Current Ratings Characteristics Fig. 4 - Current Ratings Characteristics Maximum Average O n-state Pow er Loss (W ) 0 900 0 700 0 0 300 RMS Lim it Conduction Angle T = 25 C 0 0 2 300 3 0 4 Maximum Average On-state Power Loss (W) 0 0 0 0 0 DC RMS Limit Conduction Period T = 25 C 0 0 300 0 0 700 A verag e O n -state Curre nt (A ) Averag e On-state Current (A) Fig. 5 - On-state Power Loss Characteristics Fig. 6 - On-state Power Loss Characteristics Peak Half Sine Wave On-state Current (A) 4 00 3 At An y Rated Load Con dition And With Rated V RRM Applied Following Surge. Initial T = 25 C @ Hz 0.0083 s @ 0.0 s 0 0 Number Of Equal Amplitude Half Cycle Current Pulses (N) Peak Half Sine Wave On-state Current (A) 4 00 3 M axim um N on Re petitive Surg e Curre nt Ve rsus Pulse Train D uration. Co ntro l Of C on duction May Not Be Maintain ed. In it ia l T = 2 5 C No V oltag e Re applied Rate d V Reapplied RRM 0 0.0 0. P ulse Tra in D ura tion ( s) Fig. 7 - Maximum Non-repetitive Surge Current Single and Double Side Cooled Fig. 8 - Maximum Non-repetitive Surge Current Single and Double Side Cooled 6
Instantaneous On-state Current (A) 00 0 ST 83C..C Series T = 25 C T = 25 C.5 2 2.5 3 3.5 4 4.5 Instantaneous On-state Voltage (V) Fig. 9 - On-state Voltage Drop Characteristics Transien t Therm al Im p edanc e Z th -hs (K/W) 0. 0.0 ST 83C..C Series Steady State Value R th -hs = 0.7 K/W ( S in g le S id e C o o le d ) R th -hs = 0.08 K/W (D ouble Side Cooled) (D C O peration) 0.00 0.00 0.0 0. 0 Square W av e Pulse D uratio n (s) Fig. 0 - Thermal Impedance Z th-hs Characteristics Maximum Reverse Recovery Charge - Qrr (µc) 2 T = 25 C I = A TM 300 A A A A 0 0 0 20 30 70 90 Rate Of Fall Of On-state Current - di/dt (A/µs) Maximum Reverse Recovery Current - Irr (A) 20 20 I TM = A 300 A A A A T = 25 C 0 0 0 20 30 70 90 Rate Of Fall Of Forw ard Current - di/dt (A/µs) Fig. - Reverse Recovered Charge Characteristics Fig. 2 - Reverse Recovery Current Characteristics Pe ak O n -state C urre nt (A ) E4 E3 0 0 Sinusoidal pulse Sinuso ida l p ulse T C = 55 C T C = C 00 00 E2 E E2 E3 E4 E4E E E2 E3 E4 Pulse Basewidth (µs) Snubber circuit C s = 0.22 µ F Fig. 3 - Frequency Characteristics 0 0 Pulse Base w idth (µs) Snub ber circuit R s = 47 oh m s 7
P eak O n-state Curren t (A) E4 Snubber circuit Snubber circuit V D = % V DRM E3 0 H z 0 0 0 ST83C..C Se rie s Trapezoidal pulse Trapezoidal pulse T C = C T C = 55 C di/dt = A/µs di/dt = A/µs E2 E E2 E3 E4 E4 E E E2 E3 E4 Pulse Basew idth (µs) Pulse Basew idth (µs) Fig. 4 - Frequency Characteristics Peak On -state C urrent (A) E4 E3 E2 Snub ber circuit 0 00 0 Trapezoidal pulse T C = C di/dt = A/µs Snubber circuit E E E2 E3 E4 E4 E E E2 E3 E4 Pulse Base w idth (µs) Pulse Basew idth (µs) Fig. 5 - Frequency Characteristics 0 0 Trapezoida l pulse 00 T C = 55 C di/dt = A/µs Peak O n-state C urren t (A) E5 E4 E3 E2 0. 0.3 0.2 ST83C..C Serie s Sinusoidal pulse 0.5 20 joules per pulse 0 4 2 Rectangular pulse di/dt = A/µs 0.5 0.3 0.2 0. 20 joules per pulse 0 4 2 E E E2 E3 E4 E4 E E E2 E3 E4 Pulse Basew idth (µs) Pulse Base w idth (µs) Fig. 6 - Maximum On-state Energy Power Loss Characteristics 8
Instantaneo us Gate V oltage (V ) 0 Re c tang ular gate pulse a) Recomm ended load line for rate d di/dt : 20V, 0ohm s; tr<= µs b ) R e c o m m e n d e d lo a d lin e fo r <=30% rated di/dt : 0V, 0ohm s tr<= µs VGD Tj=25 C (b) Tj=25 C IG D Device: Frequency Limited by PG (AV ) 0. 0.00 0.0 0. 0 Tj=- C (a ) Instantaneous Gate Curren t (A) () PG M = 0W, = 20m s (2) PG M = 20W, = 0m s (3) PG M = W, = 5m s (4) PG M = W, = 3.3ms () (2) (3) (4) Fig. 7 - Gate Characteristics 9