Features Low gate charge 1% avalanche tested Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification S = 88 V @T jmax = 3A R DS(ON) =. (max) @ = 1 V D G Absolute Maximum Ratings Parameter Symbol GP1M3A8H(H) GP1M3A8F(H) Unit Drain-Source Voltage S 8 V Gate-Source Voltage ±3 V Continuous Drain Current T C = 5 3 3 * A T C = 1 1.83 1.83 * A Pulsed Drain Current (Note 1) M 1 1* A Single Pulse Avalanche Energy (Note ) E AS 83 mj Repetitive Avalanche Current (Note 1) I AR 3 A Repetitive Avalanche Energy (Note 1) E AR 9. mj Power Dissipation Device Package Marking Remark GP1M3A8H/ GP1M3A8F TO- / TO-F GP1M3A8H/ GP1M3A8F RoHS TO- / TO-F Halogen Free T C = 5 9 3 W P D Derate above 5.75.5 W/ Peak Diode Recovery dv/dt (Note 3) dv/dt.5 V/ns Operating Junction and Storage Temperature Range T J, T STG -55~15 Maximum lead temperature for soldering purposes, 1/8 from case for 5 seconds T L 3 * Limited only by maximum junction temperature Thermal Characteristics Parameter Symbol GP1M3A8H(H) GP1M3A8F(H) Unit Maximum Thermal resistance, Junction-to-Case R JC 1.33 3.9 /W Maximum Thermal resistance, Junction-to-Ambient R JA.5.5 /W 1/7 S
Electrical Characteristics : T C =5, unless otherwise noted Parameter Symbol Test condition Min Typ Max Units OFF Drain-Source Breakdown Voltage BS = V, = 5 µa 8 -- -- V = 8 V, = V -- -- 1 µa Zero Gate Voltage Drain Current SS = V, T C = 15 C -- -- 1 µa Forward Gate-Source Leakage Current I GSSF = 3 V, = V -- -- 1 na Reverse Gate-Source Leakage Current I GSSR = -3 V, = V -- -- -1 na ON Gate Threshold Voltage (th) =, = 5 µa -- V Drain-Source On-Resistance R DS(on) = 1 V, = 1.5 A -- 3.3. Forward Transconductance (Note ) g FS = 3 V, = 1.5 A -- 3.7 -- S DYNAMIC Input Capacitance C iss = 5 V, = V, -- 9 -- pf Output Capacitance C oss f = 1. MHz -- 5 -- pf Reverse Transfer Capacitance C rss -- 1. -- pf SWITCHING Turn-On Delay Time (Note,5) t d(on) V DD = V, = 3 A, -- 8 -- ns Turn-On Rise Time (Note,5) t r R G = 5 Ω -- 3 -- ns Turn-Off Delay Time (Note,5) t d(off) -- 1 -- ns Turn-Off Fall Time (Note,5) t f -- 1 -- ns Total Gate Charge (Note,5) Q g = V, = 3 A, -- 19 -- nc Gate-Source Charge (Note,5) Q gs = 1 V -- -- nc Gate-Drain Charge (Note,5) Q gd -- 7. -- nc SOURCE DRAIN DIODE Maximum Continuous Drain-Source Diode Forward Current I S ---- -- -- 3 A Maximum Pulsed Drain-Source Diode Forward Current I SM ---- -- -- 1 A Drain-Source Diode Forward Voltage V SD = V, I S = 3 A -- -- 1.5 V Reverse Recovery Time (Note ) t rr = V, I S = 3 A -- 37 -- ns Reverse Recovery Charge (Note ) Q rr di F / dt = 1 A/µs -- 1.8 -- µc Note : 1. Repeated rating : Pulse width limited by safe operating area. L= 59mH, I AS = 3A, V DD = 5V, R G = 5Ω, Starting T J = 5 3 I SD 3A, di/dt A/µs, V DD B, Starting T J = 5. Pulse Test :Pulse width 3µs, Duty Cycle % 5. Essentially Independent of Operating Temperature Typical Characteristics /7
Drain Current, 8 Top =15.V 1.V 8.V 7.V.5V.V Bottom 5.V Drain Current, 1 1 = 3V 5 μ s Pulse Test 5 15-55 1. T C = 5. 5μ s Pulse Test 3 5 Drain-Source Voltage,.1 8 1 Gate-Source Voltage, Drain-Source On-Resistance R DS(ON) [Ω ] 5 3 T J = 5 = 1V = V Reverse Drain Current, R 1 1 8 = V 5μ s Pulse Test 15 5 1 8 Drain Current,.....8 1. 1. 1. 1. Source-Drain Voltage, V SD Capacitance [pf] 15 1 5 C rss C oss C iss = C gs + C gd (C ds = shorted) C oss = C ds + C gd C rss = C gd C iss = V f = 1 MHz Gate-Source Voltage, 1 1 8 = 3A = V = 1V = V 1-1 1 1 Drain-Source Voltage, 8 1 1 1 1 18 Total Gate Charge, Q G [nc] 3/7
1. 3. Drain-Source Breakdown Voltage BS, (Normalized) 1.1 1..9 = V = 5 μ A Drain-Source On-Resistance R DS(ON), (Normalized).5. 1.5 1..5 = 1 V = 1.5 A.8-8 - 8 1 1 Junction Temperature,T J [ o C]. -8-8 1 1 Junction Temperature, T J [ o C] 1.5 Drain Current, 3 1 Gate Threshold Voltage V TH, (Normalized) 1..5 = 1 V = 5 A 5 5 75 1 15 15 Case Temperature, T C [ ]. -8-8 1 1 Junction Temperature, T J [ o C] GP1M3A8H(H) GP1M3A8F(H) Drain Current, 1 1 1 us 1-1 T C = 5 o C T J = 15 o C Single Pulse Operation in This Area is Limited by R DS(on) DC 1 ms 1 ms 1 ms Drain Current, I D 1 1 1 us 1 ms 1 ms 1 ms DC 1-1 T C = 5 o C T J = 15 o C Single Pulse Operation in This Area is Limited by R DS(on) 1-1 1 1 1 3 Drain-Source Voltage, 1-1 1 1 1 3 Drain-Source Voltage, DS V /7
GP1M3A8H(H) Duty=.5 Transient thermal impedance (t) 1-1 1 -..1.5..1 single pulse P DM t T Duty = t/t (t) = 1.33 /W Max. 1-5 1-1 -3 1-1 -1 1 1 Pulse Width, t [sec] GP1M3A8F(H) Duty=.5 Transient thermal impedance (t) 1-1 1 -..1.5..1 single pulse P DM t T Duty = t/t (t) = 3.9 /W Max. 1-5 1-1 -3 1-1 -1 1 1 Pulse Width, t [sec] 5/7
TO-AB-3L MECHANICAL DATA /7
TO-F-3L MECHANICAL DATA SYMBOL INCHES MILLIMETERS MIN MAX MIN MAX A.178.19.53.93 b.8.3.71.91 C.18..5. D.17.33 15.7 1.7 E.39.8 9.9 1.3 e.1 TYP..5TYP. H1.5.7.5.9 J1.11.117.5.9 L.53.519 1.78 13.18 φq.117.133.98 3.38 b1.5.55 1.15 1.39 L1.11.13.9 3.3 Q1.1.138 3.1 3.5 F.9.18.3.7 NOTES 7/7