P- 93758B IRLMS2002 HEXFET Power MOSFET Utra Low On-Resistance N-Channe MOSFET Surface Mount Avaiabe in Tape & Ree 2.5V Rated G 2 3 4 6 5 A S V SS = 20V R S(on) = 0.030Ω escription These N-Channe MOSFETs from Internationa Rectifier utiize advanced processing techniques to achieve the extremey ow on-resistance per siicon area. This benefit provides the designer with an extremey efficient device for use in battery and oad management appications. Top View The Micro6 package with its customized eadframe produces a HEXFET power MOSFET with R S(on) 60% ess than a simiar size SOT-23. This package is idea for appications where printed circuit board space is at a premium. It's unique therma design and R S(on) reduction enabes a current-handing increase of neary 300% compared to the SOT-23. Micro6 Absoute Maximum Ratings Parameter Max. Units V S rain- Source Votage 20 V I @ T A = 25 C Continuous rain Current, V GS @ 4.5V 6.5 I @ T A = 70 C Continuous rain Current, V GS @ 4.5V 5.2 A I M Pused rain Current 20 P @T A = 25 C Power issipation 2.0 P @T A = 70 C Power issipation.3 W Linear erating Factor 0.06 W/ C V GS Gate-to-Source Votage ± 2 V T J, T STG Junction and Storage Temperature Range -55 to + 50 C Therma Resistance Parameter Max. Units R θja Maximum Junction-to-Ambientƒ 62.5 C/W www.irf.com /8/00
Eectrica Characteristics @ T J = 25 C (uness otherwise specified) Parameter Min. Typ. Max. Units Conditions V (BR)SS rain-to-source Breakdown Votage 20 V V GS = 0V, I = 250µA V (BR)SS / T J Breakdown Votage Temp. Coefficient 0.06 V/ C Reference to 25 C, I = ma R S(on) Static rain-to-source On-Resistance 0.030 V GS = 4.5V, I = 6.5A Ω 0.045 V GS = 2.5V, I = 5.2A V GS(th) Gate Threshod Votage 0.60.0 V V S = V GS, I = 250µA g fs Forward Transconductance 3 S V S = V, I = 6.5A I SS rain-to-source Leakage Current.0 V S = 6V, V GS = 0V µa 25 V S = 6V, V GS = 0V, T J = 70 C I GSS Gate-to-Source Forward Leakage -0 V GS = -2V na Gate-to-Source Reverse Leakage 0 V GS = 2V Q g Tota Gate Charge 5 22 I = 6.5A Q gs Gate-to-Source Charge 2.2 3.3 nc V S = V Q gd Gate-to-rain ("Mier") Charge 3.5 5.3 V GS = 5.0V t d(on) Turn-On eay Time 8.5 V = V t r Rise Time I =.0A ns t d(off) Turn-Off eay Time 36 R G = 6.0Ω t f Fa Time 6 R = Ω C iss Input Capacitance 3 V GS = 0V C oss Output Capacitance 50 pf V S = 5V C rss Reverse Transfer Capacitance 36 ƒ =.0MHz Source-rain Ratings and Characteristics Parameter Min. Typ. Max. Units Conditions I S Continuous Source Current MOSFET symbo 2.0 (Body iode) showing the A I SM Pused Source Current integra reverse G 20 (Body iode) p-n junction diode. V S iode Forward Votage.2 V T J = 25 C, I S =.7A, V GS = 0V t rr Reverse Recovery Time 9 29 ns T J = 25 C, I F =.7A Q rr Reverse Recovery Charge 3 20 nc di/dt = 0A/µs S Notes: Repetitive rating; puse width imited by max. junction temperature. ( See fig. ) ƒ Surface mounted on FR-4 board, t 5sec. Puse width 300µs; duty cyce 2%. 2 www.irf.com
I, rain-to-source Current (A) 0 VGS TOP 7.50V 5.00V 4.00V 3.50V 3.00V 2.50V 2.00V BOTTOM.50V.50V 20µs PULSE WITH T J = 25 C 0. 0 V S, rain-to-source Votage (V) I, rain-to-source Current (A) 0 VGS TOP 7.50V 5.00V 4.00V 3.50V 3.00V 2.50V 2.00V BOTTOM.50V.50V 20µs PULSE WITH T J = 50 C 0. 0 V S, rain-to-source Votage (V) Fig. Typica Output Characteristics Fig 2. Typica Output Characteristics I, rain-to-source Current (A) 0 T J = 25 C T J = 50 C V S= 5V 20µs PULSE WITH.5 2.0 2.5 3.0 3.5 V GS, Gate-to-Source Votage (V) R S(on), rain-to-source On Resistance (Normaized) 2.0 I = 5.3A.5.0 0.5 V GS = 4.5V 0.0-60 -40-20 0 20 40 60 80 0 20 40 60 T J, Junction Temperature ( C) Fig 3. Typica Transfer Characteristics Fig 4. Normaized On-Resistance Vs. Temperature www.irf.com 3
C, Capacitance (pf) 2000 VGS = 0V, f = MHz Ciss = Cgs + Cgd, C ds SHORTE Crss = Cgd 600 Coss = Cds + Cgd C iss 200 800 400 C oss C rss 0 0 V S, rain-to-source Votage (V) V GS, Gate-to-Source Votage (V) I = 5.3A 6.5A V S = V 8 6 4 2 0 0 4 8 2 6 20 24 Q G, Tota Gate Charge (nc) Fig 5. Typica Capacitance Vs. rain-to-source Votage Fig 6. Typica Gate Charge Vs. Gate-to-Source Votage 0 0 OPERATION IN THIS AREA LIMITE BY R S(on) I S, Reverse rain Current (A) T J = 50 C T J = 25 C V GS = 0 V 0. 0.4 0.6 0.8.0.2 V S,Source-to-rain Votage (V) I, rain Current (A) ms ms TA = 25 C TJ = 50 C Singe Puse 0. 0 V S, rain-to-source Votage (V) Fig 7. Typica Source-rain iode Forward Votage Fig 8. Maximum Safe Operating Area 4 www.irf.com
V GS(th), Variace ( V ) IRLMS2002 6.0 0.20 5.0 0. I, rain Current (A) 4.0 3.0 2.0 0.00-0. -0.20 Id = 250µA.0-0.30 0.0 25 50 75 0 25 50 T, Case Temperature ( C C) -0.40-50 -25 0 25 50 75 0 25 50 T J, Temperature ( C ) Fig 9. Maximum rain Current Vs. Case Temperature Fig. Typica Vgs(th) Variance Vs. Juction Temperature 0 Therma Response (Z thja ) = 0.50 0.20 0. 0.05 0.02 0.0 Notes: SINGLE PULSE. uty factor = t / t 2 (THERMAL RESPONSE) 2. Peak T J = P M x Z thja + TA 0. 0.0000 0.000 0.00 0.0 0. 0 t, Rectanguar Puse uration (sec) PM t t2 Fig. Maximum Effective Transient Therma Impedance, Junction-to-Ambient www.irf.com 5
R S ( on), rain-to-source On Resistance ( Ω ) IRLMS2002 0.040 0. R S(on), rain-to -Source Votage ( Ω ) 0.035 0.08 0.030 0.06 0.025 Id = 5.3A 0.04 VGS= 2.5V 0.020 2.0 3.0 4.0 5.0 6.0 7.0 8.0 V GS, Gate -to -Source Votage ( V ) 0.02 0 20 30 40 I, - rain Current (A ) VGS = 4.5V Fig 2. Typica On-Resistance Vs. Gate Votage Fig 3. Typica On-Resistance Vs. rain Current 6 www.irf.com
Micro6 Package Outine 3.00 (.8 ) 2.80 (. ) -B- LEA ASSIGNMENTS RECO MMENE FOOTPRINT S 2X 0.95 (.0375 ).75 (.068 ).50 (.060 ) -A- 6 5 4 2 3 3.00 (.8 ) 2.60 (.3 ) 6 5 4 2 3 2.20 (.087 ) 6X (.06 (.042 ) 0.95 (.0375 ) 2X 0.50 (.09 ) 6X 0.35 (.04 ) 0.5 (.006 ) M C A S B S G 6X 0.65 (.025 ).30 (.05 ) 0.90 (.036 ).45 (.057 ) 0.90 (.036 ) O O 0-0.20 (.007 ) 6X 0.09 (.004 ) -C - 0.5 (.006 ) M AX. 0. (.004 ) 6 SURFACES 0.60 (.023 ) 0. (.004 ) NOTES :. IMENSIONING & TOLERANCING PER ANSI Y4.5M-982. 2. CO NTROLLING IMENSION : MILLIMETER. 3. IMENSIONS ARE SHOW N IN MILLIMETERS (INCHES). Micro6 Part Marking Information EXAMPLE : THIS IS AN IRLMS6702 PART NUMBER WAFER LOT NUMBER COE PART NUMBER EXAMPLES: 2A = IRLMS902 2B = IRLMS503 2C = IRLMS6702 2 = IRLMS5703 TOP BOTTOM ATE COE ATE COE EXAMPLES: YW W = 9603 = 6C YW W = 9632 = FF WORK YEAR Y WEEK W 200 0 A 2002 2 02 B 2003 3 03 C 2004 4 04 2005 5 996 6 997 7 998 8 999 9 2000 0 24 X 25 Y 26 Z WORK YEAR Y W EEK W 200 A 27 A 2002 B 28 B 2003 C 29 C 2004 30 2005 E 996 F 997 G 998 H 999 J 2000 K 50 X 5 Y 52 Z W ORK W EEK = (-26) IF PRECEE BY LAST IGIT OF CALENER YEAR W ORK WEEK = ( 27-52) IF PRECEE BY A LETTER www.irf.com 7
Micro6 Tape & Ree Information 8mm 4mm FEE IRECTION NOTES :. OUTLINE CONFORMS TO EIA-48 & EIA-54. 78.00 ( 7.008 ) MAX. 9.90 (.390 ) 8.40 (.33 ) NOTES:. C ON TRO LLING IM EN SIO N : M ILLIM ETER. 2. OUTLINE CONFORMS TO EIA-48 & EIA-54. WORL HEAQUARTERS: 233 Kansas St., E Segundo, Caifornia 90245, Te: (3) 252-75 IR GREAT BRITAIN: Hurst Green, Oxted, Surrey RH8 9BB, UK Te: ++ 44 883 732020 IR CANAA: 5 Lincon Court, Brampton, Ontario L6T3Z2, Te: (905) 453 2200 IR GERMANY: Saaburgstrasse 57, 6350 Bad Homburg Te: ++ 49 672 96590 IR ITALY: Via Liguria 49, 07 Borgaro, Torino Te: ++ 39 45 0 IR JAPAN: K&H Bdg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 7 Te: 8 3 3983 0086 IR SOUTHEAST ASIA: Kim Seng Promenade, Great Word City West Tower, 3-, Singapore 237994 Te: ++ 65 838 4630 IR TAIWAN:6 F. Suite. 207, Sec. 2, Tun Haw South Road, Taipei, 673, Taiwan Te: 886-2-2377-9936 http://www.irf.com/ ata and specifications subject to change without notice. /2000 8 www.irf.com