I, rain Current (A) IR MOFET trongirfet IRF40M229 Application Brushed Motor drive applications BLC Motor drive applications Battery powered circuits Half-bridge and full-bridge topologies ynchronous rectifier applications Resonant mode power supplies OR-ing and redundant power switches C/C and AC/C converters C/AC Inverters irectfet N-Channel Power MOFET V R (on) typ. max I (ilicon Limited) 40V 1.4m 1.85m 159A Benefits Improved Gate, Avalanche and ynamic dv/dt Ruggedness Fully Characterized Capacitance and Avalanche OA Enhanced body diode dv/dt and di/dt Capability Lead-Free, RoH Compliant G MF irectfet IOMETRIC tandard Pack Orderable Part Number Base part number Package Type Form Quantity IRF40M229 irectfet MF Tape and Reel 4800 IRF40M229 R (on), rain-to -ource On Resistance (m ) 6.0 5.0 I = 97A 175 150 4.0 125 3.0 0 75 2.0 T J = 125 C 50 1.0 0.0 4 6 8 12 14 16 18 20 25 0 25 50 75 0 125 150 V G, Gate -to -ource Voltage (V) T C, Case Temperature ( C) Fig 1. Typical On-Resistance vs. Gate Voltage Fig 2. Maximum rain Current vs. Case Temperature 1 2016-3-2
IRF40M229 Absolute Maximum Ratings ymbol Parameter Max. Units I @ T C = 25 C Continuous rain Current, V G @ V (ilicon Limited) 159 I @ T C = 0 C Continuous rain Current, V G @ V (ilicon Limited) 1 A I M Pulsed rain Current 636 P @T C = 25 C Maximum Power issipation 83 W Linear erating Factor 0.67 W/ C V G Gate-to-ource Voltage ± 20 V T J Operating Junction and -55 to + 150 torage Temperature Range C T TG Avalanche Characteristics E A (Thermally limited) ingle Pulse Avalanche Energy 72 E A (Thermally limited) ingle Pulse Avalanche Energy 169 mj E A (tested) ingle Pulse Avalanche Energy Tested Value 195 I AR Avalanche Current A ee Fig.15,16, 23a, 23b E AR Repetitive Avalanche Energy mj Thermal Resistance ymbol Parameter Typ. Max. Units R JA Junction-to-Ambient 45 R JA Junction-to-Ambient 12.5 R JA Junction-to-Ambient 20 C/W R JC Junction-to-Case 1.5 R J-PCB Junction-to-PCB Mounted 1.0 tatic @ (unless otherwise specified) ymbol Parameter Min. Typ. Max. Units Conditions V (BR) rain-to-ource Breakdown Voltage 40 V V G = 0V, I = 250µA V (BR) / T J Breakdown Voltage Temp. Coefficient 32 mv/ C Reference to 25 C, I = 1.0mA R (on) tatic rain-to-ource On-Resistance 1.4 1.85 m V G = V, I = 97A 3.0 V G = 6.0V, I = 49A V G(th) Gate Threshold Voltage 2.2 2.8 3.9 V V = V G, I = 0µA 1.0 V = 40V, V G = 0V I rain-to-ource Leakage Current µa 150 V = 40V, V G = 0V, T J = 125 C I G Gate-to-ource Forward Leakage 0 V G = 20V na Gate-to-ource Reverse Leakage -0 V G = -20V R G Internal Gate Resistance 1.0 Notes: Mounted on minimum footprint full size board with metalized back and with small clip heatsink. Used double sided cooling, mounting pad with large heatsink. TC measured with thermocouple mounted to top (rain) of part. urface mounted on 1 in. square Cu board (still air). Mounted to a PCB with small clip heatsink (still air) Mounted on minimum footprint full size board with metalized back and with small clip heatsink (still air) 2 2016-3-2
IRF40M229 ynamic @ (unless otherwise specified) ymbol Parameter Min. Typ. Max. Units Conditions gfs Forward Transconductance 87 V = V, I = 97A Q g Total Gate Charge 7 161 I = 97A Q gs Gate-to-ource Charge 30 V nc =20V Q gd Gate-to-rain ("Miller") Charge 39 V G = V Q sync Total Gate Charge ync. (Q g - Q gd ) 68 t d(on) Turn-On elay Time 16 V = 20V t r Rise Time 66 I ns = 30A t d(off) Turn-Off elay Time 54 R G = 2.7 t f Fall Time 54 V G = V C iss Input Capacitance 5317 V G = 0V C oss Output Capacitance 866 V = 25V C rss Reverse Transfer Capacitance 575 pf ƒ = 1.0MHz C oss eff. (ER) Effective Output Capacitance (Energy Related) 37 V G = 0V, V = 0V to 32V C oss eff. (TR) Effective Output Capacitance (Time Related) 1237 V G = 0V, V = 0V to 32V iode Characteristics ymbol Parameter Min. Typ. Max. Units Conditions I Continuous ource Current MOFET symbol 83 (Body iode) showing the A G I M Pulsed ource Current integral reverse 636 (Body iode) p-n junction diode. V iode Forward Voltage 1.2 V,I = 97A, V G = 0V dv/dt Peak iode Recovery 3.2 V/ns T J =150 C,I = 97A,V = 40V t rr Reverse Recovery Time 26 T J = 25 C V R = 34V ns 27 T J = 125 C I F = 97A Q rr Reverse Recovery Charge 24 di/dt = 0A/µs nc 23 T J = 125 C I RRM Reverse Recovery Current 1.2 A Notes: Repetitive rating; pulse width limited by max. junction temperature. Limited by T J max, starting, L = 0.015mH R G = 50, I A = 97A, V G =V. I 97A, di/dt 862A/µs, V V( BR), T J 150 C. Pulse width 400µs; duty cycle 2%. C oss eff. (TR) is a fixed capacitance that gives the same charging time as C oss while V is rising from 0 to 80% V. C oss eff. (ER) is a fixed capacitance that gives the same energy as C oss while V is rising from 0 to 80% V. When mounted on 1" square PCB (FR-4 or G- Material). For recommended footprint and soldering techniques refer to application note # AN-994. http://www.irf.com/technical-info/appnotes/an-994.pdf R is measured at T J approximately 90 C. This value determined from sample failure population, starting, L= 0.015mH, R G = 50, I A = 97A, V G =V. Limited by T J max, starting, L = 1mH R G = 50, I A = 18A, V G =V. 3 2016-3-2
C, Capacitance (pf) V G, Gate-to-ource Voltage (V) I, rain-to-ource Current (A) (Normalized) I, rain-to-ource Current (A) I, rain-to-ource Current (A) IRF40M229 00 0 VG TOP 15V V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V 00 0 VG TOP 15V V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V 4.5V 4.5V 60µs PULE WITH Tj = 25 C 1 0.1 1 0 V, rain-to-ource Voltage (V) Fig 3. Typical Output Characteristics 60µs PULE WITH Tj = 150 C 1 0.1 1 0 V, rain-to-ource Voltage (V) Fig 4. Typical Output Characteristics 00 2.0 I = 97A V G = V 0 T J = 150 C 1.5 1.0 1.0 V = V 60µs PULE WITH 3 4 5 6 7 8 9 V G, Gate-to-ource Voltage (V) Fig 5. Typical Transfer Characteristics R (on), rain-to-ource On Resistance 0.5 0.0-60 -40-20 0 20 40 60 80 0 120 140 160 T J, Junction Temperature ( C) Fig 6. Normalized On-Resistance vs. Temperature 0000 000 V G = 0V, f = 1 MHZ C iss = C gs + C gd, C ds HORTE C rss = C gd C oss = C ds + C gd 14.0 12.0.0 I = 97A V = 32V V = 20V V= 8.0V C iss 8.0 C oss 6.0 00 C rss 4.0 2.0 0 0.1 1 0 V, rain-to-ource Voltage (V) 0.0 0 20 40 60 80 0 120 140 Q G, Total Gate Charge (nc) Fig 7. Typical Capacitance vs. rain-to-ource Voltage Fig 8. Typical Gate Charge vs. Gate-to-ource Voltage 4 2016-3-2
V (BR), Energy (µj) I, Reverse rain Current (A) I, rain-to-ource Current (A) IRF40M229 00 000 OPERATION IN THI AREA LIMITE BY R (on) 00 0 T J = 150 C 0 0µsec 1msec rain-to-ource Breakdown Voltage (V) 1 V G = 0V 0.1 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 V, ource-to-rain Voltage (V) Fig 9. Typical ource-rain iode Forward Voltage 49 Id = 1.0mA 47 1 0.1 Fig. Maximum afe Operating Area 0.8 0.7 0.6 Tc = 25 C Tj = 150 C ingle Pulse C msec 0.01 0.1 1 0 V, rain-to-ource Voltage (V) 45 43 0.5 0.4 0.3 41 0.2 0.1 39-60 -40-20 0 20 40 60 80 0 120 140 160 T J, Temperature ( C ) Fig 11. rain-to-ource Breakdown Voltage 0.0-5 0 5 15 20 25 30 35 40 45 V, rain-to-ource Voltage (V) Fig 12. Typical C oss tored Energy R (on), rain-to -ource On Resistance (m ) 14 12 VG = 5.5V VG = 6.0V VG = 7.0V VG = 8.0V VG = V 8 6 4 2 0 0 25 50 75 0 125 150 175 200 I, rain Current (A) Fig 13. Typical On-Resistance vs. rain Current 5 2016-3-2
E AR, Avalanche Energy (mj) Thermal Response ( Z thjc ) C/W IRF40M229 1 = 0.50 0.1 0.01 0.20 0. 0.05 0.02 0.01 INGLE PULE ( THERMAL REPONE ) 0.001 1E-006 1E-005 0.0001 0.001 0.01 0.1 t 1, Rectangular Pulse uration (sec) Notes: 1. uty Factor = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 00 Fig 14. Maximum Effective Transient Thermal Impedance, Junction-to-Case 0 Allowed avalanche Current vs avalanche pulsewidth, tav, assuming Tj = 125 C and Tstart =25 C (ingle Pulse) Avalanche Current (A) 80 70 60 50 40 30 20 1 Allowed avalanche Current vs avalanche pulsewidth, tav, assuming j = 25 C and Tstart = 125 C. 0.1 1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01 TOP ingle Pulse BOTTOM 1.0% uty Cycle I = 97A 0 25 50 75 0 125 150 tarting T J, Junction Temperature ( C) Fig 16. Maximum Avalanche Energy vs. Temperature tav (sec) Fig 15. Avalanche Current vs. Pulse Width Notes on Repetitive Avalanche Curves, Figures 15, 16: (For further info, see AN-05 at www.irf.com) 1.Avalanche failures assumption: Purely a thermal phenomenon and failure occurs at a temperature far in excess of T jmax. This is validated for every part type. 2. afe operation in Avalanche is allowed as long ast jmax is not exceeded. 3. Equation below based on circuit and waveforms shown in Figures 23a, 23b. 4. P (ave) = Average power dissipation per single avalanche pulse. 5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. I av = Allowable avalanche current. 7. T = Allowable rise in junction temperature, not to exceed T jmax (assumed as 25 C in Figure 14, 15). t av = Average time in avalanche. = uty cycle in avalanche = tav f Z thjc (, t av ) = Transient thermal resistance, see Figures 13) P (ave) = 1/2 ( 1.3 BV I av ) = T/ Z thjc I av = 2 T/ [1.3 BV Z th ] E A (AR) = P (ave) t av 6 2016-3-2
Q RR (nc) I RRM (A) Q RR (nc) V G(th), Gate threshold Voltage (V) I RRM (A) IRF40M229 4.5 I F = 65A 4.0 8 V R = 34V 3.5 T J = 125 C 6 3.0 2.5 2.0 I = 0µA I = 250µA I = 1.0mA I = 1.0A 4 2 1.5-75 -50-25 0 25 50 75 0 125 150 T J, Temperature ( C ) 0 0 200 300 400 500 600 700 di F /dt (A/µs) Fig 17. Threshold Voltage vs. Temperature Fig 18. Typical Recovery Current vs. dif/dt 8 I F = 97A V R = 34V T J = 125 C 200 175 150 I F = 65A V R = 34V T J = 125 C 6 125 4 0 75 2 50 0 0 200 300 400 500 600 700 25 0 200 300 400 500 600 700 di F /dt (A/µs) di F /dt (A/µs) Fig 19. Typical Recovery Current vs. dif/dt Fig 20. Typical tored Charge vs. dif/dt 225 200 I F = 97A V R = 34V 175 150 T J = 125 C 125 0 75 50 25 0 200 300 400 500 600 700 di F /dt (A/µs) Fig 21. Typical tored Charge vs. dif/dt 7 2016-3-2
IRF40M229 Fig 22. Peak iode Recovery dv/dt Test Circuit for N-Channel HEXFET Power MOFETs V (BR) 15V tp V L RIVER R G 20V tp.u.t I A 0.01 + - V A I A Fig 23a. Unclamped Inductive Test Circuit Fig 23b. Unclamped Inductive Waveforms Fig 24a. witching Time Test Circuit Fig 24b. witching Time Waveforms Vds Id Vgs V Vgs(th) Qgs1 Qgs2 Qgd Qgodr Fig 25a. Gate Charge Test Circuit Fig 25b. Gate Charge Waveform 8 2016-3-2
IRF40M229 irectfet Board Footprint, MF Outline (Medium ize Can, E-esignation) Please see irectfet application note AN-35 for all details regarding the assembly of irectfet. This includes all recommendations for stencil and substrate designs. G = GATE = RAIN = OURCE G Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 9 2016-3-2
IRF40M229 irectfet Outline imension, MF Outline (Medium ize Can, E-esignation) Please see irectfet application note AN-35 for all details regarding the assembly of irectfet. This includes all recommendations for stencil and substrate designs. IMENION METRIC IMPERIAL COE A MIN 6.25 MAX 6.35 MIN 0.246 MAX 0.250 B 4.80 5.05 0.189 0.199 C E F G 3.85 0.35 0.58 1.08 0.93 3.95 0.45 0.62 1.12 0.97 0.152 0.014 0.023 0.043 0.037 0.156 0.018 0.024 0.044 0.038 H 1.28 1.32 0.050 0.052 J J1 0.38 0.58 0.42 0.62 0.015 0.023 0.017 0.024 K 0.835 0.965 0.033 0.038 L 2.035 2.165 0.080 0.085 M N 0.59 0.02 0.70 0.08 0.023 0.0008 0.028 0.003 P 0.08 0.17 0.003 0.007 imensions are shown in millimeters (inches) irectfet Part Marking LOGO GATE MARKING PART NUMBER BATCH NUMBER ATE COE Line above the last character of the date code indicates "Lead-Free" Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 2016-3-2
IRF40M229 irectfet Tape & Reel imension (howing component orientation). LOAE TAPE FEE IRECTION NOTE: Controlling dimensions in mm td reel quantity is 4800 parts. Ordered as IRF40M229. NOTE: CONTROLLING IMENION IN MM COE A B C E F G H IMENION METRIC MIN MAX 7.90 8. 3.90 4. 11.90 12.30 5.45 5.55 5. 5.30 6.50 6.70 1.50 1.50 1.60 IMPERIAL MIN 0.311 0.154 0.469 0.215 0.201 0.256 0.059 0.059 MAX 0.319 0.161 0.484 0.219 0.209 0.264 0.063 COE A B C E F G H REEL IMENION TANAR OPTION (QTY 4800) METRIC MIN 330.0 20.2 12.8 1.5 0.0 12.4 11.9 MAX 13.2 18.4 14.4 15.4 MIN 12.992 0.795 0.504 0.059 3.937 0.488 0.469 IMPERIAL MAX 0.520 0.724 0.567 0.606 Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 11 2016-3-2
IRF40M229 Qualification Information Qualification Level Moisture ensitivity Level FET 1.5 RoH Compliant Industrial * (per JEEC JE47F guidelines) ML1 (per JEEC J-T-020 ) Yes Qualification standards can be found at International Rectifier s web site: http://www.irf.com/product-info/reliability Applicable version of JEEC standard at the time of product release. * Industrial qualification standards except autoclave test conditions. Published by Infineon Technologies AG 81726 München, Germany Infineon Technologies AG 2015 All Rights Reserved. IMPORTANT NOTICE The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics ( Beschaffenheitsgarantie ). With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. In addition, any information given in this document is subject to customer s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer s products and any use of the product of Infineon Technologies in customer s applications. The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application. For further information on the product, technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies office (www.infineon.com). WARNING ue to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office. Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury. 12 2016-3-2