MIX1H1EH IGBT Module H Bridge CES 5 = 1 = 1 CE(sat) = 1. Part name (Marking on product) MIX1H1EH 13, 1 1 9 1 19 15 E773 3 11 1 1, Features: pplication: Package: Easy paralleling due to the positive temperature coefficient of the on-state voltage Rugged XPT design (Xtreme light Punch Through) results in: - short circuit rated for 1 µsec. - very low gate charge - square RBSO @ 3x - low EMI Thin wafer technology combined with the XPT design results in a competitive low CE(sat) SONIC diode - fast and soft reverse recovery - low operating forward voltage C motor drives Solar inverter Medical equipment Uninterruptible power supply ir-conditioning systems Welding equipment Switched-mode and resonant-mode power supplies "E3-Pack" standard outline Iulated copper base plate Soldering pi for PCB mounting Optimizes pin layout 1151a 11 IXYS ll rights reserved 1-6
MIX1H1EH Ouput Inverter T1 - T6 Symbol Definitio Conditio min. typ. max. Unit CES collector emitter voltage = 5 C 1 S M max. DC gate voltage max. traient collector gate voltage continuous traient 5 collector current T C = 5 C T C = C ± ±3 1 P tot total power dissipation T C = 5 C 39 W CE(sat) collector emitter saturation voltage = 77 ; = 15 = 5 C 1..1.1 (th) gate emitter threshold voltage = 3 m; = CE = 5 C 5. 6. 6.5 ES collector emitter leakage current CE = CES ; = = 5 C.3.6. m m I GES gate emitter leakage current = ± 5 n Q G(on) total gate charge CE = 6 ; = 15 ; = 75 3 nc t d(on) t r t d(off) t f E on E off turn-on delay time current rise time turn-off delay time current fall time turn-on energy per pulse turn-off energy per pulse inductive load CE = 6 ; = 75 = ±15 ; R G = 1 W RBSO reverse bias safe operating area = ±15 ; R G = 1 W; CEK = 1 5 SCSO t SC I SC short circuit safe operating area short circuit duration short circuit current 7 5 6..3 CE = 9 ; = ±15 ; R G = 1 W; non-repetitive 3 mj mj 1 µs R thjc thermal resistance junction to case (per IGBT).3 K/W Output Inverter D1 - D6 Symbol Definitio Conditio min. typ. max. Unit RRM max. repetitve reverse voltage = 5 C 1 I F5 I F forward current T C = 5 C T C = C F forward voltage I F = ; = = 5 C Q rr I RM t rr E rec reverse recovery charge max. reverse recovery current reverse recovery time reverse recovery energy R = 6 /dt = -16 /µs I F = ; = 1.95 1.95 1.5 35 135 9. µc mj R thjc thermal resistance junction to case (per diode). K/W T C = 5 C unless otherwise stated 1151a 11 IXYS ll rights reserved - 6
MIX1H1EH Module Symbol Definitio Conditio min. typ. max. Unit M T stg operating temperature max. virtual junction temperature storage temperature - - 15 15 15 C C C ISOL isolation voltage I ISOL < 1 m; 5/6 Hz 3 ~ CTI comparative tracking index M d mounting torque (M5) 3 6 Nm d S d creep distance on surface strike distance through air 1 7.5 mm mm R pin-chip resistance pin to chip.5 mw R thch thermal resistance case to heatsink with heatsink compound. K/W Weight 3 g Equivalent Circuits for Simulation I Symbol Definitio Conditio min. typ. max. Unit R R IGBT T1 - T6 = 15 C 1.1 17.9 free wheeling diode D1 - D6 = 15 C 1.9 R 9.1 T C = 5 C unless otherwise stated mw mw 1151a 11 IXYS ll rights reserved 3-6
MIX1H1EH Circuit Diagram 13, 1 D Data Matrix FOSS-ID 6 digits 1 9 XXX XX-XXXXX YYCWx 1 19 Logo Part name Date Code Prod.Index 3 1, 11 1 15 Part number M = Module I = IGBT X = XPT = standard 1 = Current Rating H = H~ Bridge 1 = Reverse oltage [] EH = E3-Pack Outline Drawing Dimeio in mm (1 mm =.39 ) Remark: Dimeio without tolerances acc. DIN ISO 76-T1-m Product Marking Ordering Part Name Marking on Product Delivering Mode Base Qty Ordering Code Standard MIX 1 H 1 EH MIX1H1EH Box 5 51153 1151a 11 IXYS ll rights reserved - 6
MIX1H1EH Traistor T1 - T6 1 1 = 15 1 1 = 15 17 19 13 11 = 5 C I C 6 6 9..5 1. 1.5..5 3. 3.5 CE [] Fig. 1 Typ. output characteristics..5 1. 1.5..5 3. 3.5..5 CE [] Fig. Typ. output characteristics 1 1 15 = 75 CE = 6 1 6 [] = 5 C 5 6 7 9 1 11 1 13 [] 5 5 15 5 3 Q G [nc] Fig. 3 Typ. tranfer characteristics Fig. Typ. turn-on gate charge 16 1 1 R G = 1 Ω CE = 6 = ±15 1 9 E 1 E E off [mj] 6 E off E on [mj] 7 6 E on = 75 CE = 6 = ±15 6 1 1 16 Fig. 5 Typ. switching energy vs. collector current 5 1 1 1 16 1 R G [Ω] Fig. 6 Typ. switching energy vs. gate resistance 1151a 11 IXYS ll rights reserved 5-6
MIX1H1EH Inverter D1 - D6 15 R = 6 I F 16 Q rr [µc] 1 5 = 5 C 5..5 1. 1.5..5 3. F [] Fig. 7 Typ. Forward current versus F 1 1 16 1 /dt [/µs] Fig. Typ. reverse recov.charge Q rr vs. di/dt 16 7 1 R = 6 6 R = 6 I RM 1 6 5 t rr [] 5 3 5 1 1 16 1 /dt [/µs] Fig. 9 Typ. peak reverse current I RM vs. di/dt 1 1 16 1 /dt [/µs] Fig. 1 Typ. recovery time t rr versus di/dt 6 R = 6 1 Diode IGBT E rec [mj] 5 1 1 16 1 /dt [/µs] Fig. 11 Typ. recovery energy E rec versus di/dt Z thjc.1 IGBT FRD [K/W] R i t i R i t i 1.7..9..37.3.67.3 3.156.3.155.3.1.55..6..1.1.1 1 1 t p [s] Fig. 1 Typ. traient thermal impedance 1151a 11 IXYS ll rights reserved 6-6
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