Silicon Carbide Power MOSFET N-CHANNEL ENHANCEMENT MODE TO-247-3L Inner Circuit Product Summary V DS I D(@25 C) R DS(on) 1200V 20A 120mΩ Features u Low On-Resistance u Low Capacitance u Avalanche Ruggedness u Halogen Free, RoHS Compliant Applications u SMPS / UPS / PFC u EV Charging station & Motor Drives Benefits u Higher System Efficiency u Parallel Device Convenience u High Temperature Application u High Frequency Operation u Power Inverters & DC/DC Converters u Solar/ Wind Renewable Energy Maximum Ratings (T c =25 C) Parameter Symbol Test Conditions Value Unit Drain Source Voltage V DS, max V GS =0V, I DS =100µA 1200 V Continuous Drain Current I D V GS =20V, T C =25 C 20 V GS =20V, T C =110 C 12 A Pulse Drain Current I D, pulse t PW limitation per Fig.16 42 Avalanche energy, Single Pulse E AS V DD =100V, I D =10A 625 mj Power Dissipation P D T C =25 C 113 W Recommend Gate Source Voltage V GS, op -5/+20 Maximum Gate Source Voltage V GS, max -10/+25 V Junction & Storage Temperature T j, T stg -55/+150 Soldering Temperature T L 260 C Feb. 2017 1 www.hestia-power.com
Electrical Characteristics (T j =25 C) Parameter Symbol Test Conditions Min. Typ. Max. Unit Drain-Source Breakdown Voltage V (BR)DSS V GS =0V, I DS =100µA 1200 V Gate Threshold Voltage V GS(th) V DS =10V, I DS =10mA 2.7 V V DS =1200V, V GS =0V <1 50 Zero Gate Voltage Drain Current I DSS V DS =1200V, V GS =0V µa 2 200 T j =150 C Gate-Source Leakage Current I GSS V GS =20V, V DS =0V 250 na V GS =20V, I DS =10A 120 160 Drain-Source On-State Resistance R DS(on) V GS =20V, I DS =10A, mω 200 T j =150 C Input Capacitance C iss 1000 V GS =0V, V DS =800V Output Capacitance C oss 61 f =1MHz, V AC =25mV Reverse Transfer Capacitance C rss 12 Effective Output Capacitance, Energy Related Effective Output Capacitance, Time Related C o(er) C o(tr) V GS =0V, V DS =0 to 800V I D =const., V GS =0V, V DS =0 to 800V Turn On Delay Time t d(on) V DS =800V, pf 73 95 16 Rise Time t r V GS =-4/20V, I D =10A, 20 ns Turn Off Delay Time t d(off) R L =80Ω, 15 Fall Time t f R G(ext) = 8.2 Ω 17 C oss Stored Energy E oss V GS =0V, V DS =800V 31 f =1MHz, V AC =25mV Turn-on Switching Energy E on V DS =800V, 47* µj Turn-off Switching Energy E off V GS =0/20V, I D =10A, R G(ext) = 2.7 Ω 64* Internal Gate Resistance R G(int.) f =1MHz, V AC =25mV 8 Ω *The energy loss caused by the reverse recovery of FWD is not included in E on. Built-in SiC Diode Characteristics (T j =25 C) Parameter Symbol Test Conditions Typ. Unit Inverse Diode Forward Voltage V SD V GS =-5V, I SD =2.5A 4.3 V Reverse Recovery Time t rr V GS =0V, 53 ns Reverse Recovery Charge Q rr I SD =10A, V DS =400V, 63 nc Peak Reverse Recovery Current I rrm di/dt=300a/µs 2.25 A Feb. 2017 2 www.hestia-power.com
Gate Charge Characteristics (T j =25 C) Parameter Symbol Test Conditions Value Unit Gate to Source Charge Q GS 14.5 V DS =800V, Gate to Drain Charge Q GD 29 nc V GS =-5/20V, Total Gate Charge Q G 67 I D =10A Gate plateau voltage V pl 8.2 V Thermal Resistance Parameter Symbol Value Unit Thermal Resistance, Junction to Case R θ,jc 1.1 K/W Thermal Resistance, Junction to Ambient R θ,ja TBD Typical Device Performance Fig. 1 Forward Output Characteristics at T j = 25 C Fig. 2 Forward Output Characteristics at T j = 150 C Fig. 3 On-Resistance vs. Drain Current for Fig. 4 Transfer Characteristics for Various T j Various T j Feb. 2017 3 www.hestia-power.com
Typical Device Performance Fig. 5 On-Resistance vs. Gate Voltage for Various T j Fig. 6 Normalized On-Resistance vs. Temperature Fig. 7 Reverse Output Characteristics at T j = 25 C Fig. 8 Reverse Output Characteristics at T j = 150 C Fig. 9 Capacitances vs. Drain to Source Voltage (0-200V) Fig. 10 Capacitances vs. Drain to Source Voltage (0-1000V) Feb. 2017 4 www.hestia-power.com
Typical Device Performance Fig. 11 Threshold Voltage vs. Temperature Fig. 12 Output Capacitor Stored Energy* Fig. 13 Maximum Power Dissipation Derating vs. Case Temperature Fig. 14 Drain Current Derating vs. Case Temperature Fig. 15 Transient Junction to Case Thermal Impedance Fig. 16 Safe Operating Area Feb. 2017 5 www.hestia-power.com
Typical Device Performance Fig. 17 Gate Charge Characteristics Fig. 18 Clamped Inductive Switching Energy vs. Drain Current (V DD =800V)* Fig. 19 Clamped Inductive Switching Energy Fig. 20 Clamped Inductive Switching Energy vs. Drain Current (V DD =600V)* vs. External Gate Resistor (R G(ext.) )* Recommended Solder Pad Layout (TO-247-3L) *The energy loss caused by the reverse recovery of FWD is not included in E on. Mechanical Parameters Parameter Symbol Typical Unit A 3.048 B 2.032 Length mm C 5.436 D 5.436 Feb. 2017 6 www.hestia-power.com
Mechanical Parameters *The information provided herein is subject to change without notice. Feb. 2017 7 www.hestia-power.com