Description xj SiC Series 8mW - 12V SiC Normally-On JFET UJN128Z Die Form United Silicon Carbide, Inc offers the xj series of high-performance SiC normally-on JFET transistors. This series exhibits ultra-low on resistance (R DS(ON) ) and gate charge (Q G ) allowing for low conduction and switching loss. The device normally-on characteristics with low R DS(ON) at V GS = V is also ideal for current protection circuits without the need for active control, as well as for cascode operation. Part Number UJN128Z Package Die Features Typical Applications Low On-Resistance R DS(on)max of.8w Over Current Protection Circuits Voltage controlled DC-AC Inverters Maximum operating temperature of 175 C Switch Mode Power Supplies Extremely fast switching not dependent on temperature Power Factor Correction Modules Low gate charge Motor Drives Low intrinsic capacitance Induction Heating RoHS compliant Maximum Ratings Parameter Symbol Test Conditions Value Units Drain-source voltage V DS 12 V Gate-source voltage V GS DC AC (1) -2 to +3-2 to +2 V Continuous drain current (2) I D T C = 25 C T C = 125 C T j = 125 C Pulsed drain current (2) I DM 41 T j = 175 C 21 13 35 A A A Operating and storage temperature T J, T STG -55 to 175 C (1) +2V AC rating applies for turn-on pulses <2ns applied with external R G > 1W. (2) Assumes a maximum junction-to-case thermal resistance of 1.1 C/W Rev. B, November 216 1 For more information go to www.unitedsic.com.
Electrical Characteristics (T J = +25 C unless otherwise specified) Typical Performance - Static xj SiC Series 8mW - 12V SiC Normally-On JFET UJN128Z Die Form Parameter Symbol Test Conditions Value Min Typ Max Units Drain-source breakdown voltage BV DS V GS =-2V, I D =1mA 12 V Total drain leakage current Total gate leakage current Drain-source on-resistance Gate threshold voltage Gate Resistance I D I G R DS(on) V DS = 12V, V GS = -2V, T J = 25 C V DS = 12V, V GS = -2V, T J = 175 C V GS =-2V, T j =25 C V GS =-2V, T j =175 C V GS =2V, I D =1A, T J = 25 C V GS =V, I D =1A, T J = 25 C V GS =2V, I D =1A, T J = 175 C V GS =V, I D =1A, T J = 175 C 4 5 12 15.3 125 3 67 8 77 95 2 24 23 285 V G(th) V DS = 5V, I D = 7mA -1-7 -4 V R G V GS = V, f = 1MHz 6 W ma ma mw Rev. B, November 216 2 For more information go to www.unitedsic.com.
xj SiC Series 8mW - 12V SiC Normally-On JFET UJN128Z Die Form Typical Performance - Dynamic (Refer to the datasheet of the packaged device UJN128K) Parameter symbol Test Conditions Value Min Typ Max Input capacitance C iss V DS = 1V, 5 Output capacitance C oss V GS = -2V, 94 Reverse transfer capacitance C rss f = 1kHz 93 Effective output capacitance, energy related Total gate charge Gate-drain charge Gate-source charge Turn-on delay time Rise time Turn-off delay time Fall time Turn-on energy Turn-off energy Total switching energy Turn-on delay time Rise time Turn-off delay time Fall time Turn-on energy Turn-off energy Total switching energy V DS = V to 6V, C oss(er) 53 pf V GS = -2V Q G 62 V Q DS =6V, I D = 2A, GD 44 V GS =-15V to 2.5V Q GS 6 t d(on) 11 t r V DS =6V, I D =2A, 3 t Gate Driver =-15V to d(off) 23 +5V, t f R 26 G,EXT = 2.5W, E ON Inductive Load, 22 E OFF T J = 25 C 21 E TOTAL 412 t d(on) 11 t r V DS =6V, I D =2A, 33 t d(off) Gate Driver =-15V to 22 t f +5V, R G,EXT = 2.5W, 23 E ON Inductive Load, 22 E OFF T J = 15 C 174 E TOTAL 394 Units pf nc ns mj ns mj Rev. B, November 216 3 For more information go to www.unitedsic.com.
Drain Leakage Current, I D (A) Typical Performance Diagrams xj SiC Series 8mW - 12V SiC Normally-On JFET UJN128Z Die Form 8 7 6 5 4 3 2 1 Vgs = 2V Vgs = V Vgs= - 1V Vgs = -2V Vgs = -3V Vgs = -4V 1 2 3 4 5 6 7 8 9 1 5 4 3 2 1 Vgs = 2V Vgs = V Vgs= - 1V Vgs = -2V Vgs = -3V Vgs = -4V 1 2 3 4 5 6 7 8 9 1 Figure 1 Typical output characteristics Figure 2 Typical output characteristics at T j = 25 C at T j = 125 C 5 4 3 Vgs = 2V Vgs = V Vgs= - 1V Vgs = -2V Vgs = -3V Vgs = -4V 1.E-3 1.E-4 1.E-5 1.E-6 2 1 1.E-7 1.E-8-55 C 25 C 125 C 175 C 5 1 15 1.E-9 2 4 6 8 1 12 Figure 3 Typical output characteristics Figure 4 Typical drain-source leakage at T j = 175 C at V GS = -2V Rev. B, November 216 4 For more information go to www.unitedsic.com.
Gate-Source Voltage, V GS (V) On-Resistance, R DS(on) (mw) Capacitance, C (pf) xj SiC Series 8mW - 12V SiC Normally-On JFET UJN128Z Die Form 5 1 C iss 4 3 1 2 C oss C rss 1 1 2 4 6 8 1 12-8 -7-6 -5-4 -3-2 -1 Gate-Source Voltage, V GS (V) Figure 5 Typical capacitances at 1kHz and V GS = -2V Figure 6 Typical transfer characteristics at V DS = 5V 2.5. -2.5-5. -7.5-1. 4 35 3 25 2 15 1-12.5 5-15. 1 2 3 4 5 6 7 Gate Charge, Q G (nc) 1 2 3 4 5 6 7 Figure 7 Typical gate charge at V DS = 6V and I D = 2A Figure 8 Typical drain-source on-resistance at V GS = V Rev. B, November 216 5 For more information go to www.unitedsic.com.
Gate Current, I G (A) Gate Current, I G (A) Threshold Voltage, V G(th) (V) E OSS (mj) xj SiC Series 8mW - 12V SiC Normally-On JFET UJN128Z Die Form 3-2 25-4 -6-8 2 15 1 5-1 25 5 75 1 125 15 175 Junction Temperature, T j ( C) 2 4 6 8 1 12 Figure 9 Threshold voltage vs. Tj Figure 1 Typical stored energy in C OSS at V DS = 5V and I D = 7mA at V GS = -2V 1.E-4 1.E+ 1.E-5 1.E-1 1.E-6 1.E-2 1.E-7 1.E-3 1.E-8 1.E-4 1.E-9-3 -25-2 -15-1 -5 Gate-Source Voltage, V GS (V) 1.E-5 1 2 3 4 Gate-Source Voltage, V GS (V) Figure 11 Typical gate leakage current Figure 12 Typical gate forward current at V DS = V at V DS = V Rev. B, November 216 6 For more information go to www.unitedsic.com.
.17.35.15 2.36 1.5 Mechanical Characteristics xj SiC Series 8mW - 12V SiC Normally-On JFET UJN128Z Die Form Parameter Typical Value Units Die Dimensions (L x W) 2.11 x 2.36 mm Source Pad Metal Dimensions (L x W) 1.72 x 1.5 mm Gate Pad Metal Dimensions (L x W).7 x.35 mm Source Metallization (Al) 5 mm Gate Metallization (Al) 5 mm Backside Drain Metallization (Ti/Ni/Au).7/.1/.1 mm Die Thickness 15 mm Chip Dimensions 2.11 1.72 Source Pad Opening Unit: mm.7 Gate Pad Opening Disclaimer United Silicon Carbide, Inc. reserves the right to change or modify any of the products and their inherent physical and technical specifications without prior notice. United Silicon Carbide, Inc. assumes no responsibility or liability for any errors or inaccuracies within. Information on all products and contained herein is intended for description only. No license, express or implied, to any intellectual property rights is granted within this document. United Silicon Carbide, Inc. assumes no liability whatsoever relating to the choice, selection or use of the United Silicon Carbide, Inc. products and services described herein. Rev. B, November 216 7 For more information go to www.unitedsic.com.