SQJ57EP Automotive N- and P-Channel V (D-S) 75 C MOSFET PRODUCT SUMMARY N-CHANNEL P-CHANNEL V DS (V) - R DS(on) ( ) at V GS = ± V.45 46 R DS(on) ( ) at V GS = ± 4.5 V.58.265 I D (A) 5-9.5 Configuration N- and P-Pair Package PowerPAK SO-8L Dual FEATURES TrenchFET power MOSFET AEC-Q qualified % R g and UIS tested Material categorization: for definitions of compliance please see www.vishay.com/doc?9992 D S 2 PowerPAK SO-8L Dual G 2 D G 6.5 mm mm 5.3 mm D 2 4 G 2 3 S 2 2 G S S N-Channel MOSFET D 2 P-Channel MOSFET Top View Bottom View ABSOLUTE MAXIMUM RATINGS (, unless otherwise noted) PARAMETER SYMBOL N-CHANNEL P-CHANNEL UNIT Drain-Source Voltage V DS - Gate-Source Voltage V GS ± 2 V Continuous Drain Current 5 a -9.5 I D 9.6-5.5 Continuous Source Current (Diode conduction) a I S 5-5 A Pulsed Drain Current b I DM 4-2 Single Pulse Avalanche Current I AS 3-6 L = mh Single Pulse Avalanche Energy E AS 8.4.8 mj Maximum Power Dissipation b 27 27 P D 9 9 W Operating Junction and Storage Temperature Range T J, T stg -55 to +75 Soldering Recommendations (Peak temperature) d, e 26 C THERMAL RESISTANCE RATINGS PARAMETER SYMBOL N-CHANNEL P-CHANNEL UNIT Junction-to-Ambient PCB mount c R thja 85 85 C/W Junction-to-Case (Drain) R thjc 5.5 5.5 Notes a. Package limited. b. Pulse test; pulse width 3 μs, duty cycle 2 %. c. When mounted on " square PCB (FR4 material). d. See solder profile (www.vishay.com/doc?73257). The PowerPAK SO-8L is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components. S6-462-Rev. A, -Aug-6 Document Number: 76453 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?9
SQJ57EP SPECIFICATIONS (, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static V GS = V, I D = 25 μa N-Ch - - Drain-Source Breakdown Voltage V DS V GS = V, I D = -25 μa P-Ch - - - V DS = V GS, I D = 25 μa N-Ch.5 2 2.5 Gate-Source Threshold Voltage V GS(th) V DS = V GS, I D = -25 μa P-Ch -.5-2 -2.5 Gate-Source Leakage I GSS V DS = V, V GS = ± 2 V N-Ch - - ± P-Ch - - ± V GS = V V DS = V N-Ch - - V GS = V V DS = - V P-Ch - - - Zero Gate Voltage Drain Current I DSS V GS = V V DS = V, T J = 25 C N-Ch - - 5 V GS = V V DS = - V, T J = 25 C P-Ch - - -5 V GS = V V DS = V, T J = 75 C N-Ch - - 5 V GS = V V DS = - V, T J = 75 C P-Ch - - -5 On-State Drain Current a I D(on) V GS = V V DS 5 V N-Ch - - V GS = - V V DS 5 V P-Ch -6 - - V GS = V I D = 6 A N-Ch -.365.45 V GS = - V I D = -6 A P-Ch - 84 46 V GS = V I D = 6 A, T J = 25 C N-Ch - -.774 Drain-Source On-State Resistance a R DS(on) V GS = - V I D = -6 A, T J = 25 C P-Ch - -.2435 V GS = V I D = 6 A, T J = 75 C N-Ch - -.978 V GS = - V I D = -6 A, T J = 75 C P-Ch - -.2994 V GS = 4.5 V I D = 4 A N-Ch -.468.58 V GS = -4.5 V I D = -4 A P-Ch - 669.265 Forward Transconductance b V DS = 5 V, I D = 6 A N-Ch - 5 - g fs V DS = -5 V, I D = -6 A P-Ch - 7 - Dynamic b Input Capacitance C iss V GS = V V DS = 25 V, f = MHz N-Ch - 42 6 V GS = V V DS = -25 V, f = MHz P-Ch - 48 65 Output Capacitance C oss V GS = V V DS = 25 V, f = MHz N-Ch - 26 35 V GS = V V DS = -25 V, f = MHz P-Ch - 25 35 Reverse Transfer Capacitance C rss V GS = V V DS = 25 V, f = MHz N-Ch - 7 25 V GS = V V DS = -25 V, f = MHz P-Ch - 2 3 Total Gate Charge c Q g V GS = V V DS = 5 V, I D = A N-Ch - 9 5 V GS = - V V DS = -5 V, I D = - A P-Ch - 2 2 Gate-Source Charge c Q gs V GS = V V DS = 5 V, I D = A N-Ch -.2 - V GS = - V V DS = -5 V, I D = - A P-Ch - 2 - Gate-Drain Charge c Q gd V GS = V V DS = 5 V, I D = A N-Ch -.9 - V GS = - V V DS = -5 V, I D = - A P-Ch - 3 - Gate Resistance R g f = MHz N-Ch.3 2.7 4.5 P-Ch 5.2 5.5 Turn-On Delay Time c t d(on) V DD = 5 V, R L = 5, I D A, V GEN = V, R g = 5 N-Ch - 8 5 V DD = -5 V, R L = 5, I D - A, V GEN = - V, R g = 5 P-Ch - 2 2 V DD = 5 V, R L = 5, N-Ch - 4 Rise Time c I D A, V GEN = V, R g = 5 t r V DD = -5 V, R L = 5, P-Ch - 5 I D - A, V GEN = - V, R g = 5 Turn-Off Delay Time c t d(off) V DD = 5 V, R L = 5, I D A, V GEN = V, R g = 5 N-Ch - 2 35 V DD = -5 V, R L = 5, I D - A, V GEN = - V, R g = 5 P-Ch - 3 5 Fall Time c t f V DD = 5 V, R L = 5, I D A, V GEN = V, R g = 5 N-Ch - 7 3 V DD = -5 V, R L = 5, I D - A, V GEN = - V, R g = 5 P-Ch - 5 25 S6-462-Rev. A, -Aug-6 2 Document Number: 76453 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?9 V na μa A S pf nc ns
SQJ57EP SPECIFICATIONS (, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Source-Drain Diode Ratings and Characteristics b Pulsed Current a N-Ch - - 4 I SM P-Ch - - -2 I S = 6 A N-Ch -.89.2 Forward Voltage V SD I S = -6 A P-Ch - -.89 -.2 Notes a. Pulse test; pulse width 3 μs, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. A V Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S6-462-Rev. A, -Aug-6 3 Document Number: 76453 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?9
SQJ57EP N-CHANNEL TYPICAL CHARACTERISTICS (T A = 25 C, unless otherwise noted) 4 V GS = V thru 5 V 35 32 28 24 6 8 V GS = 4 V 2 4 7 V GS = 3 V 2 4 6 8 T C =-55 C.8 3.6 5.4 7.2 9 Output Characteristics Transfer Characteristics 25 5 T C =-55 C g fs - Transconductance (S) 2 5 5 R DS(on) - On-Resistance (Ω) 2.9.6.3 V GS = 4.5 V V GS = V 2 4 6 8 Transconductance. 4 8 2 6 2 On-Resistance vs. Drain Current 8 C - Capacitance (pf) 64 48 32 6 C rss C oss C iss 8 6 4 2 I D = A V DS = 5 V 2 4 6 8 3 6 9 2 5 Q g - Total Gate Charge (nc) Capacitance Gate Charge S6-462-Rev. A, -Aug-6 4 Document Number: 76453 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?9
SQJ57EP N-CHANNEL TYPICAL CHARACTERISTICS (T A = 25 C, unless otherwise noted) 2.5 R DS(on) - On-Resistance (Normalized) 2..7.3.9 I D = 7 A V GS = V V GS = 4.5 V.5-5 -25 25 5 75 25 5 75 T J - Junction Temperature ( C) I S - Source Current (A).. T J = 5 C T J = 25 C.2.4.6.8..2 V SD - Source-to-Drain Voltage (V) On-Resistance vs. Junction Temperature Source Drain Diode Forward Voltage.25.5 R DS(on) - On-Resistance (Ω).2 5..5 T J = 5 C V GS(th) Variance (V).2 - -.4 -.7 I D = 5 ma I D = 25 μa. T J = 25 C 2 4 6 8 -. -5-25 25 5 75 25 5 75 T J - Temperature ( C) On-Resistance vs. Gate-to-Source Voltage Threshold Voltage 25 2 7 3 9 I D = ma 5-5 -25 25 5 75 25 5 75 T J - Junction Temperature ( C) I DM limited I D limited Limited by R DS(on) () μs ms ms ms, s, s, DC. Single pulse BVDSS limited. () V GS > minimum V GS at which R DS(on) is specified Drain Source Breakdown vs. Junction Temperature Safe Operating Area S6-462-Rev. A, -Aug-6 5 Document Number: 76453 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?9
SQJ57EP N-CHANNEL TYPICAL CHARACTERISTICS (T A = 25 C, unless otherwise noted) 2 Normalized Effective Transient Thermal Impedance Duty cycle =.5.2.5.2 Single pulse. -4-3 -2-6 Square Wave Pulse Duration (s) Notes: P DM t t 2 t. Duty cycle, D = t 2 2. Per unit base = R thja = 85 C/W 3. T JM - T A = P DM Z (t) thja 4. Surface mounted Normalized Thermal Transient Impedance, Junction-to-Ambient Normalized Effective Transient Thermal Impedance Duty Cycle =.5.2.5.2 Single pulse.... Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case Note The characteristics shown in the two graphs - Normalized Transient Thermal Impedance Junction-to-Ambient (25 C) - Normalized Transient Thermal Impedance Junction-to-Case (25 C) are given for general guidelines only to enable the user to get a ball park indication of part capabilities. The data are extracted from single pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part mounted on printed circuit board - FR4, size " x " x.62", double sided with 2 oz. copper, % on both sides. The part capabilities can widely vary depending on actual application parameters and operating conditions. S6-462-Rev. A, -Aug-6 6 Document Number: 76453 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?9
SQJ57EP P-CHANNEL TYPICAL CHARACTERISTICS (T A = 25 C, unless otherwise noted) 25 5 2 V GS = V thru 6 V 2 5 5 V GS = 5 V V GS = 4 V 9 6 3 V GS = 3 V 2 4 6 8 T C =-55 C.4 2.8 4.2 5.6 7 Output Characteristics Transfer Characteristics 5.5 g fs - Transconductance (S) 2 9 6 3 T C =-55 C R DS(on) - On-Resistance (Ω).4.3.2 V GS = 4.5 V V GS = V 2 4 6 8 Transconductance. 2 4 6 8 On-Resistance vs. Drain Current 8 C - Capacitance (pf) 64 48 32 6 C rss C oss C iss 8 6 4 2 I D = A V DS = 5 V 2 4 6 8 3 6 9 2 5 Q g - Total Gate Charge (nc) Capacitance Gate Charge S6-462-Rev. A, -Aug-6 7 Document Number: 76453 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?9
SQJ57EP P-CHANNEL TYPICAL CHARACTERISTICS (T A = 25 C, unless otherwise noted). V GS(th) Variance (V).7.4 -.2 I D = 25 μa I D = 5 ma I S - Source Current (A). T J = 5 C T J = 25 C -.5-5 -25 25 5 75 25 5 75 T J - Temperature ( C) Threshold Voltage..2.4.6.8..2 V SD - Source-to-Drain Voltage (V) Source Drain Diode Forward Voltage. 2.5 R DS(on) - On-Resistance (Ω).8.6.4.2. T J = 5 C T J = 25 C 2 4 6 8 R DS(on) - On-Resistance (Normalized) 2..7.3.9 I D = 6 A V GS = V V GS = 4.5 V.5-5 -25 25 5 75 25 5 75 T J - Junction Temperature ( C) On-Resistance vs. Gate-to-Source Voltage On-Resistance vs. Junction Temperature - I DM limited -4-8 -22-26 I D = ma -3-5 -25 25 5 75 25 5 75 T J - Junction Temperature ( C) I D limited Limited by R DS(on) () μs ms ms ms, s, s, DC Single pulse BVDSS limited.. () V GS > minimum V GS at which R DS(on) is specified Drain Source Breakdown vs. Junction Temperature Safe Operating Area S6-462-Rev. A, -Aug-6 8 Document Number: 76453 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?9
SQJ57EP P-CHANNEL TYPICAL CHARACTERISTICS (T A = 25 C, unless otherwise noted) Normalized Effective Transient Thermal Impedance 2 Duty cycle =.5.2.5.2 Single pulse. 4. Surface mounted -4-3 -2-6 Square Wave Pulse Duration (s) Notes: P DM t t 2 t. Duty cycle, D = t 2 2. Per unit base = R thja = 85 C/W 3. T JM - T A = P DM Z thja (t) Normalized Thermal Transient Impedance, Junction-to-Ambient Normalized Effective Transient Thermal Impedance Duty cycle =.5.2.5.2 Single pulse.... Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case Note The characteristics shown in the two graphs - Normalized Transient Thermal Impedance Junction-to-Ambient (25 C) - Normalized Transient Thermal Impedance Junction-to-Case (25 C) are given for general guidelines only to enable the user to get a ball park indication of part capabilities. The data are extracted from single pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part mounted on printed circuit board - FR4, size " x " x.62", double sided with 2 oz. copper, % on both sides. The part capabilities can widely vary depending on actual application parameters and operating conditions. maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?76453. S6-462-Rev. A, -Aug-6 9 Document Number: 76453 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?9
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