Si3V N-Channel V (-S) MOSFET PROUCT SUMMARY V S (V) R S(on) (Ω) I (A) d Q g (Typ.).8 at V GS =. V 7.9.3 at V GS =. V 7..38 at V GS =.8 V.8 TSOP- Top View.7 nc FEATURES Halogen-free According to IEC 9-- efinition TrenchFET Power MOSFET % R g Tested % UIS Tested Compliant to RoHS irective /9/EC APPLICATIONS C/C Converters Boost Converters Load Switch (,,, ) 3 mm G 3.8 mm Marking Code BA XXX Part # Code Ordering Information: Si3V-T-GE3 (Lead (Pb)-free and Halogen-free) S Lot Traceability and ate Code ABSOLUTE MAXIMUM RATINGS T A = C, unless otherwise noted G (3) S () N-Channel MOSFET Parameter Symbol Limit Unit rain-source Voltage V S Gate-Source Voltage V GS ± 8 V T C = C 7.9 Continuous rain Current (T J = C) T C = 7 C.3 I T A = C. a, b T A = 7 C. a, b Pulsed rain Current I M A Continuous Source-rain iode Current T C = C. I S T A = C. a, b Avalanche Current I AS 8 Single Avalanche Energy E AS 3. mj T C = C.7 Maximum Power issipation T C = 7 C.7 P T A = C.7 a, b W T A = 7 C. a, b Operating Junction and Storage Temperature Range T J, T stg - to Soldering Recommendations (Peak Temperature) d, e C THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit Maximum Junction-to-Ambient a, c t s R thja 7 Maximum Junction-to-Foot (rain) Steady State R thjf 38 C/W Notes: a. Surface mounted on " x " FR board. b. t = s. c. Maximum under steady state conditions is C/W. d. Based on T C = C. S-789-Rev. A, -Apr-
Si3V rain-source On-State Resistance a R S(on) SPECIFICATIONS T J = C, unless otherwise noted Parameter Symbol Test Conditions Min. Typ. Max. Unit Static rain-source Breakdown Voltage V S V GS = V, I = µa V V S Temperature Coefficient ΔV S /T J I = µa V GS(th) Temperature Coefficient ΔV GS(th) /T J -. mv/ C Gate-Source Threshold Voltage V GS(th) V S = V GS, I = µa.. V Gate-Source Leakage I GSS V S = V, V GS = ± 8 V ± na V S = V, V GS = V Zero Gate Voltage rain Current I SS V S = V, V GS = V, T J = 7 C µa On-State rain Current a I (on) V S V, V GS =. V A V GS =. V, I =.7 A.7.3 Ω V GS =. V, I =. A.3.8 V GS =.8 V, I =. A.3.38 Forward Transconductance a g fs V S = V, I =. A 3 S ynamic b Input Capacitance C iss Output Capacitance C oss V S = V, V GS = V, f = MHz 93 pf Reverse Transfer Capacitance C rss V S = V, V GS = 8 V, I = A 8 Total Gate Charge Q g.7. nc Gate-Source Charge Q gs V S = V, V GS =. V, I = A.9 Gate-rain Charge Q gd. Gate Resistance R g f = MHz... Ω Turn-On elay Time t d(on) Rise Time t r V = V, R L = Ω Turn-Off elay Time t d(off) I A, V GEN =. V, R g = Ω 3 Fall Time t f 8 Turn-On elay Time t d(on) ns Rise Time t r V = V, R L = Ω 8 Turn-Off elay Time t d(off) I A, V GEN = 8 V, R g = Ω 9 9 Fall Time t f 8 rain-source Body iode Characteristics Continuous Source-rain iode Current I S T C = C. Pulse iode Forward Current I SM A Body iode Voltage V S I S = A, V GS = V.8. V Body iode Reverse Recovery Time t rr ns Body iode Reverse Recovery Charge Q rr 3 nc I F = A, di/dt = A/µs, T J = C Reverse Recovery Fall Time t a 7 ns Reverse Recovery Rise Time t b Notes: a. Pulse test; pulse width 3 µs, duty cycle % b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S-789-Rev. A, -Apr-
Si3V TYPICAL CHARACTERISTICS C, unless otherwise noted V GS =Vthru.8V I - rain Current (A) V GS =.V V GS =V..... I - rain Current (A) 3 T C = C T C = C T C = - C..3..9.. V S - rain-to-source Voltage (V) Output Characteristics V GS - Gate-to-Source Voltage (V) Transfer Characteristics. 9 - On-Resistance (Ω) R S(on)..3. V GS =.8V V GS =.V V GS =.V C - Capacitance (pf) 7 C oss C iss. I - rain Current (A) On-Resistance vs. rain Current and Gate Voltage 8 C rss V S - rain-to-source Voltage (V) Capacitance.7 I =A - Gate-to-Source Voltage (V) V GS V S =V V S =V V S =V - On-Resistance R S(on) (Normalized)..3..9 V GS =.V;I =3A V GS =.V;I =A 3 9 Q g - Total Gate Charge (nc) Gate Charge.7 - - 7 T J - Junction Temperature ( C) On-Resistance vs. Junction Temperature S-789-Rev. A, -Apr- 3
Si3V TYPICAL CHARACTERISTICS C, unless otherwise noted. I =A - Source Current (A) I S T J = C T J = C - On-Resistance (Ω) R S(on)..3. T J = C T J = C...3..9. V S - Source-to-rain Voltage (V) Source-rain iode Forward Voltage.8 8 V GS - Gate-to-Source Voltage (V) On-Resistance vs. Gate-to-Source Voltage. I = - ma (V) V GS(th). I = - μa Power (W).3. - - 7 T J - Temperature ( C) Threshold Voltage... Time (s) Single Pulse Power (Junction-to-Ambient) Limited by R S(on) * - rain Current (A) μa ms ms I. T A = C Single Pulse BVSS Limited ms s,s C.. V S - rain-to-source Voltage (V) *V GS > minimum V GS at which R S(on) is specified Safe Operating Area, Junction-to-Ambient S-789-Rev. A, -Apr-
Si3V TYPICAL CHARACTERISTICS C, unless otherwise noted 8 I - rain Current (A) Package Limited 7 T C - Case Temperature ( C) Current erating* 3...8. Power (W).. Power (W).9..7.3. 7. 7 T C - Case Temperature ( C) Power, Junction-to-Case T A - Ambient Temperature ( C) Power, Junction-to-Ambient * The power dissipation P is based on T J(max.) = C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. S-789-Rev. A, -Apr-
Si3V TYPICAL CHARACTERISTICS C, unless otherwise noted uty Cycle =. Normalized Effective Transient Thermal Impedance...... Single Pulse - -3 - - Notes: Square Wave Pulse uration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient P M t t t. uty Cycle, = t. Per Unit Base = R thja = C/W 3. T JM -T A =P M Z (t) thja. Surface Mounted uty Cycle =. Normalized Effective Transient Thermal Impedance.... Single Pulse.. - -3 - - Square Wave Pulse uration (s) Normalized Thermal Transient Impedance, Junction-to-Foot maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see /ppg?7. S-789-Rev. A, -Apr-
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