MMBT55L, MMBT555L, SMMBT555L High Voltage Transistors NPN Silicon Features AECQ Qualified and PPAP Capable S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant BASE COLLECTOR MAXIMUM RATINGS Rating Symbol Value Unit CollectorEmitter Voltage MMBT55 MMBT555, SMMBT555 CollectorBase Voltage MMBT55 MMBT555, SMMBT555 V CEO 40 60 V CBO 60 80 EmitterBase Voltage V EBO 6.0 Collector Current Continuous I C 600 madc Electrostatic Discharge Human Body Model Machine Model THERMAL CHARACTERISTICS ESD > 8000 > 400 Characteristic Symbol Max Unit Total Device Dissipation FR 5 Board (Note ) @T A = Derate Above P D 225.8 V mw mw/ C Thermal Resistance, JunctiontoAmbient R JA 556 C/W Total Device Dissipation Alumina Substrate (Note 2) @T A = Derate Above P D 0 2.4 mw mw/ C Thermal Resistance, JunctiontoAmbient R JA 47 C/W Junction and Storage Temperature T J, T stg 55 to + C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.. FR5 = 0.75 0.062 in. 2. Alumina = 0.4 0. 0.024 in. 99.5% alumina. 2 SOT2 (TO26) CASE 8 STYLE 6 2 EMITTER ORDERING INFORMATION MARKING DIAGRAM xx M xx = Device Code MF = MMBT55LT G = MMBT555LT M = Date Code* = PbFree Package (Note: Microdot may be in either location) *Date Code orientation and/or overbar may vary depending upon manufacturing location. Device Package Shipping MMBT55LTG MMBT555LTG SMMBT555LTG MMBT555LTG SOT2 (PbFree) SOT2 (PbFree) SOT2 (PbFree) SOT2 (PbFree),000 / Tape &,000 / Tape &,000/Tape &,000 / Tape & SMMBT555LTG SOT2 (PbFree),000/Tape & For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Packaging Specifications Brochure, BRD80/D. Semiconductor Components Industries, LLC, November, Rev. Publication Order Number: MMBT55LT/D
MMBT55L, MMBT555L, SMMBT555L ELECTRICAL CHARACTERISTICS (T A = unless otherwise noted) V Characteristic Symbol Min Max Unit OFF CHARACTERISTICS CollectorEmitter Breakdown Voltage (Note ) (I C = madc, I B = 0) MMBT55 (BR)CEO 40 60 CollectorBase Breakdown Voltage (I C = Adc, I E = 0) MMBT55 EmitterBase Breakdown Voltage (I E = Adc, I C = 0) V (BR)CBO 60 80 V (BR)EBO 6.0 Collector Cutoff Current (V CB =, I E = 0) MMBT55 (V CB =, I E = 0) (V CB =, I E = 0, T A = C) MMBT55 (V CB =, I E = 0, T A = C) Emitter Cutoff Current (V EB = 4.0, I C = 0) ON CHARACTERISTICS I CBO I EBO nadc Adc nadc DC Current Gain (I C = madc, V CE = 5.0 ) MMBT55 (I C = madc, V CE = 5.0 ) MMBT55 (I C = madc, V CE = 5.0 ) MMBT55 h FE 60 80 60 80 2 2 CollectorEmitter Saturation Voltage (I C = madc, I B = madc) Both Types (I C = madc, I B = 5.0 madc) MMBT55 V CE(sat) 0.5 0.25 0. BaseEmitter Saturation Voltage (I C = madc, I B = madc) Both Types (I C = madc, I B = 5.0 madc) MMBT55 V BE(sat).2 Collector Emitter Cutoff (V CB = V) Both Types (V CB = 75 V) I CES na. Pulse Test: Pulse Width = 0 s, Duty Cycle = %. 2
MMBT55L, MMBT555L, SMMBT555L h FE, DC CURRENT GAIN 0 0 0 T J = - 55 C V CE = V V CE = 5.0 V 7.0 5.0 0. 0.2 0. 0.5 0.7.0 5.0 7.0 70 Figure. DC Current Gain V CE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 0.9 0.8 0.7 0.6 I C = ma ma ma ma 0.5 0.4 0. 0.2 0. 0 0.005 0.0 0.02 0.05 0. 0.2 0.5 5.0 I B, BASE CURRENT (ma) Figure 2. Collector Saturation Region, COLLECTOR CURRENT ( A) μ IC 0 - -2 - -4 V CE = V T J = 75 C REVERSE I C = I CES FORWARD -5 0.4 0. 0.2 0. 0 0. 0.2 0. 0.4 0.5 0.6 V BE, BASE-EMITTER VOLTAGE (VOLTS) Figure. Collector CutOff Region V CE(sat), Coll-Emitt Saturation Voltage (V) 0. 0.25 0. 0.5 0. 0.05 0 0.000 I C /I B = C -55 C 0.00 0.0 0. Figure 4. V CE(sat)
MMBT55L, MMBT555L, SMMBT555L V BE(sat), Base-Emitt Saturation Voltage (V). 0 0.90 0.80 0.70 0.60 0. 0.40 0. I C /I B = -55 C C V BE(on), Base-Emitter Voltage (V). 0 0.90 0.80 0.70 0.60 0. 0.40 0. V CE = V -55 C C 0. 0.000 0.00 0.0 0. 0. 0.000 0.00 0.0 0. Figure 5. V BE(sat) Figure 6. V BE(on) V, TEMPERATURE COEFFICIENT (mv/ C) θ 2.5 T J = - 55 C to +5 C.5 0.5 VC for V CE(sat) 0-0.5 - VB for V BE(sat) -.5 - - 2.5 0. 0.2 0. 0.5.0 5.0 Figure 7. Temperature Coefficients C, CAPACITANCE (pf) 70 7.0 5.0.0 0.2 0. 0.5 0.7.0 5.0 7.0 V R, REVERSE VOLTAGE (VOLTS) Figure 8. Capacitances C ibo T J = C obo.2 V V BḆ 8.8 V V CC V V in s INPUT PULSE t r, t f ns DUTY CYCLE = %.0 k 0.25 F R B 5. k V in N94 R C V out Values Shown are for I C @ ma Figure 9. Switching Time Test Circuit 4
MMBT55L, MMBT555L, SMMBT555L f T, Current Gain Bandwidth Product (Mhz) 0 V CE = V T A = 0. 0.0 S ms 0. 0 Figure. Current Gain Bandwidth Product 0.00 V CE, COLLECTOR EMITTER VOLTAGE (V) Figure. Safe Operating Area 0 C, CAPACITANCE (pf) 70 7.0 5.0.0 C ibo T J = C obo t, TIME (ns) 0 0 0 0 t r @ V CC = V t d @ V EB(off) = V V CC = V t r @ V CC = V I C /I B = T J = 0.2 0. 0.5 0.7.0 5.0 7.0 V R, REVERSE VOLTAGE (VOLTS) Figure 2. Capacitances 0.2 0. 0.5.0 5.0 0 Figure. TurnOn Time 5
MMBT55L, MMBT555L, SMMBT555L PACKAGE DIMENSIONS SOT2 (TO26) CASE 808 ISSUE AP A E A D 2 e b HE SEE VIEW C L L VIEW C c 0.25 NOTES:. DIMENSIONING AND TOLERANCING PER ANSI Y4.5M, 982. 2. CONTROLLING DIMENSION: INCH.. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. MILLIMETERS INCHES DIM MIN NOM MAX MIN NOM MAX A 0.89 0. 0.05 0.040 0.044 A 0.0 0.06 0. 0.00 0.002 0.004 b 0.7 0.44 0. 0.05 0.08 0.0 c 0.09 0. 0.8 0.00 0.005 0.007 D 2.80 2.90.04 0. 0.4 0. E...40 0.047 0.05 0.055 e.78.90 4 0.070 0.075 0.08 L 0. 0. 0. 0.004 0.008 0.02 L 0.5 0.54 0.69 0.04 0.02 0.029 H E 2. 2.40 2.64 0.08 0.094 0.4 0 0 STYLE 6: PIN. BASE 2. EMITTER. COLLECTOR SOLDERING FOOTPRINT* 0.95 0.07 0.95 0.07 0.079 0.9 0.05 0.8 0.0 SCALE : mm inches *For additional information on our PbFree strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Typical parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 56, Denver, Colorado 8027 USA Phone: 675275 or 80044860 Toll Free USA/Canada Fax: 675276 or 80044867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 8002829855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 42 790 29 Japan Customer Focus Center Phone: 8587 6 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative MMBT55LT/D