BSS8 P-Channel Enhancement Mode Field-Effect Transistor Features -. A, - V, R DS(ON) = Ω at V GS = - V Voltage-Controlled P-Channel Small-Signal Switch High-Density Cell Design for Low R DS(ON) High Saturation Current SOT- D G Absolute Maximum Ratings S G D S Description This P-channel enhancement-mode field-effect transistor is produced using ON Semiconductor s proprietary, high cell density, DMOS technology. This very high density process minimizes on-state resistance and to provide rugged and reliable performance and fast switching. The BSS8 can be used, with a minimum of effort, in most applications requiring up to. A DC and can deliver current up to. A. This product is particularly suited to low-voltage applications requiring a low-current high-side switch. Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at T A = C unless otherwise noted. Symbol Parameter Ratings Unit V DSS Drain-Source Voltage V V GSS Gate-Source Voltage ± V I D Drain Current () Continuous. A Pulsed. A P D Maximum Power Dissipation ().6 W Derate Above C.9 mw / C T J, T STG Operating and Storage Junction Temperature Range to + C T L Maximum Lead Temperature for Soldering Purposes, /6 from Case for Seconds C Thermal Characteristics R θja Thermal Resistance, Junction-to-Ambient () C/W Note:. R θja is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. R θja is guaranteed by design, while R θja is determined by the user's board design. a) C/W when mounted on a minimum pad Scale : on letter-size paper. Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity SP BSS8 7 8mm Semiconductor Components Industries, LLC. September-7, Rev. Publication Order Number: BSS8/D
Electrical Characteristics () Symbol Parameter Conditions Min. Typ. Max. Unit Off Characteristics BV DSS Drain Source Breakdown Voltage V GS = V, I D = μa V ΔBV DSS Breakdown Voltage Temperature I D = μa, ΔT J Coefficient Referenced to 8 mv / V DS = V, V GS = V μa I DSS Zero Gate Voltage Drain Current V DS = V, V GS = V, T J = C 6 μa I GSS Gate Body Leakage. V GS = ± V, V DS = V ± na BV DSS Drain Source Breakdown Voltage V GS = V, I D = μa V On Characteristics () V GS(th) Gate Threshold Voltage V DS = V GS, I D = ma.8.7 V V GS(TH) Gate Threshold Voltage I D = ma, T J Temperature Coefficient Referenced to mv / R DS(on) V GS = V, I D =. A.. Ω Static Drain Source V On Resistance GS = V, I D =. A,.9 7. Ω T J = C I D(on) On State Drain Current V GS = V, V DS = V.6 A g FS Forward Transconductance V DS = V, I D =. A..6 S Dynamic Characteristics C ISS Input Capacitance V DS = V, 7 pf C OSS Output Capacitance pf V GS = V, C RSS Reverse Transfer Capacitance f =. MHz pf R G Gate Resistance V GS = mv, f =. MHz 9 Ω Switching Characteristics () t d(on) Turn On Delay.. ns t r Turn On Rise Time V DD = V, I D =.7 A, 6.. ns t d(off) Turn Off Delay V GS = V, R GEN = 6 ns t f Turn Off Fall Time.8 9.6 ns Q g Total Gate Charge.9. nc Q V DS = V, I D =. A, gs Gate Source Charge. nc V GS = V Q gd Gate Drain Charge. nc Drain-Source Diode Characteristics and Maximum Ratings I S Maximum Continuous Drain-Source Diode Forward Current -. A V SD Drain-Source Diode Forward Voltage V GS = V, I S = -.6 A () -.8 -. V t RR Diode Reverse-Recovery Time I F = -. A, ns Q RR Diode Reverse-Recovery Charge d if / d t = A / µs () nc Note:. Pulse Test: Pulse Width μs, Duty Cycle.%.
Typical Characteristics -I D, DRAIN CURRENT (A) R DS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE.8.6.. V GS = -V -.V -.V -.V -.V.8.6...8.6 -V DS, DRAIN TO SOURCE VOLTAGE (V) Figure. On-Region Characteristics I D = -.A V GS = -V. - - 7 T J, JUNCTION TEMPERATURE ( o C) R DS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE R DS(ON), ON-RESISTANCE (OHM).8.6.. V GS =-.V -.V -.V -.V.8...6.8 -I D, DRAIN CURRENT (A) -.V Figure. On-Resistance Variation with Drain Current and Gate Voltage T A = o C T A = o C... -V GS, GATE TO SOURCE VOLTAGE (V) I D = -.A Figure. On-Resistance Variation with Temperature Figure. On-Resistance Variation with Gate-to- Source Voltage -I D, DRAIN CURRENT (A).8.6.. V DS = -V T A = - o C o C o C -I S, REVERSE DRAIN CURRENT (A)... V GS = V T A = o C o C - o C... -V GS, GATE TO SOURCE VOLTAGE (V).....6.8.. -V SD, BODY DIODE FORWARD VOLTAGE (V) Figure. Transfer Characteristics Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature
Typical Characteristics (Continued) -V GS, GATE-SOURCE VOLTAGE (V) V I D = -.A DS = -8V -V -V...6.8 Q g, GATE CHARGE (nc) Figure 7. Gate Charge Characteristics CAPACITANCE (pf) P(pk), PEAK TRANSIENT POWER (W) 8 6 C ISS C OSS C RSS -V DS, DRAIN TO SOURCE VOLTAGE (V) f = MHz V GS = V Figure 8. Capacitance Characteristics.. t, TIME (sec) SINGLE PULSE R θja = 캜 /W T A = 캜 Figure 9. Maximum Safe Operating Area Figure. Single-Pulse Maximum Power Dissipation r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE.. D =...... SINGLE PULSE R θja (t) = r(t) * R θja R θja = o C/W T J - T A = P * R θja (t) Duty Cycle, D = t / t..... P(pk) t t t, TIME (sec) Figure. Transient Thermal Response Curve Thermal characterization performed using the conditions described on page. Transient thermal response will change depending on the circuit board design.
Physical Dimension SOT- L Figure. -LEAD, SOT, JEDEC TO-6, LOW PROFILE
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